Renesas 2SK4144-AZ

Overview

2SK4144-AZ from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters. It delivers R_DS(on) = 5.8 mΩ max at V_GS = 10 V / I_D = 35 A, supports ±70 A DC drain current, and features built-in gate protection diode and isolated TO-220 package for enhanced system safety and thermal management.

For engineers reviewing the 2SK4144-AZ datasheet, 2SK4144-AZ pinout, 2SK4144-AZ application, or 2SK4144-AZ equivalent, this page provides verified electrical parameters, thermal derating curves, avalanche energy rating (E_AR = 245 mJ), body diode recovery characteristics (t_rr = 48 ns), and real-world switching timing data under standardized test conditions (V_DD = 30 V, R_G = 0 Ω).

Technical Context

The 2SK4144-AZ employs a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate charge profile (Q_G = 96 nC, Q_GD = 23.5 nC) enables efficient gate driver sizing, while its C_iss = 5500 pF and C_rss = 350 pF support stable operation up to 1 MHz with minimal Miller-induced oscillation risk.

Thermally, it uses an isolated TO-220 package with R_th(ch–C) = 3.57 °C/W, enabling 35 W continuous dissipation at T_C = 25°C. Its repetitive avalanche rating (I_AR = 49.5 A, E_AR = 245 mJ) confirms robustness in inductive load switching without external snubbers under defined conditions (V_DD = 30 V, L = 100 μH, R_G = 25 Ω).

Key Specifications

Pinout & Package

2SK4144-AZ is housed in an isolated TO-220 package (2.2 g mass) with creepage/clearance separation between drain and source/ground terminals. The isolation enables direct mounting to heatsinks without insulating pads in floating-drain configurations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTH72N10L2 and STP75NF75, the 2SK4144-AZ offers lower on-resistance and integrated gate protection in an isolated TO-220, making it optimal for space-constrained, high-reliability 48–60 V switching where thermal isolation and ESD resilience are prioritized over ultimate SOA linearity or lowest cost.

Availability

2SK4144-AZ is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, uninterruptible power systems, and welding inverters requiring stable component supply and long-term lifecycle continuity.

Supply support for 2SK4144-AZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and SoC solutions.

The 2SK4144-AZ belongs to Renesas' legacy high-current discrete MOSFET product line, engineered for ruggedized industrial power conversion where low R_DS(on), avalanche robustness, and gate protection are critical.

FAQ

What is the maximum continuous drain current rating for the 2SK4144-AZ at 100°C case temperature?

The 2SK4144-AZ has a DC drain current rating of ±70 A at T_C = 25°C, derating linearly to approximately ±42 A at T_C = 100°C based on the published derating curve in the D19413EJ2V0DS datasheet. This value assumes proper heatsinking and adherence to the R_th(ch–C) = 3.57 °C/W thermal path. The 2SK4144-AZ must not exceed its channel temperature limit of 150°C under any operating condition.

Does the 2SK4144-AZ have a built-in body diode, and what are its key recovery specifications?

Yes, the 2SK4144-AZ integrates a parasitic body diode between source and drain. Its key recovery specs are: forward voltage V_F(S–D) = 0.9–1.5 V at I_F = 70 A, reverse recovery time t_rr = 48 ns, and reverse recovery charge Q_rr = 69 nC (measured at di/dt = 100 A/μs, V_GS = 0 V). These values are confirmed in the Electrical Characteristics table of the 2SK4144-AZ datasheet and directly impact performance in synchronous rectification and bridge-leg commutation.

Can the 2SK4144-AZ be driven directly by a 3.3 V microcontroller GPIO pin?

No - the 2SK4144-AZ is not guaranteed to fully enhance at 3.3 V gate drive. Its gate threshold voltage V_GS(off) ranges from 1.5–2.5 V, but R_DS(on)2 = 7.3 mΩ max is specified only at V_GS = 4.5 V. Driving with 3.3 V risks high conduction loss and thermal runaway. A dedicated gate driver (e.g., TC4427) supplying ≥4.5 V is required for reliable operation of the 2SK4144-AZ in production systems.

What is the meaning of "AZ" in the 2SK4144-AZ part number, and does it affect electrical performance?

The "AZ" suffix in 2SK4144-AZ denotes lead-free (Pb-free) plating on the external electrodes, as explicitly stated in the Ordering Information section of the datasheet. It does not alter electrical parameters, thermal ratings, or packaging dimensions - all specifications in the D19413EJ2V0DS document apply identically to the 2SK4144-AZ. The "AZ" variant complies with RoHS Directive requirements without performance trade-offs.

How is the isolated TO-220 package of the 2SK4144-AZ different from standard TO-220, and why does it matter?

The isolated TO-220 package used by the 2SK4144-AZ electrically separates the drain tab from the mounting surface, allowing direct attachment to a grounded heatsink without insulation hardware. This eliminates thermal interface resistance from mica pads or sil-pads, improving thermal transfer efficiency and simplifying mechanical assembly. Standard TO-220 packages require insulating mounts, adding thermal impedance and potential reliability risks - a key distinction confirmed in the Package Drawing and Thermal Resistance tables of the 2SK4144-AZ datasheet.