Renesas 2SK4146-S19-AY

Overview

2SK4146-S19-AY from Renesas Electronics is an N-channel power MOSFET in TO-220 package, designed for high-current DC switching in industrial power supplies and motor drives. It delivers R_DS(on) = 10.1 mΩ max at V_GS = 10 V and I_D = 40 A, supports ±200 A pulsed drain current, and features integrated body diode with V_F(S-D) = 1.5 V max at I_F = 80 A.

For engineers reviewing the 2SK4146-S19-AY datasheet, 2SK4146-S19-AY pinout, 2SK4146-S19-AY application, or 2SK4146-S19-AY equivalent, key selection criteria include low conduction loss under high DC load, avalanche energy rating (E_AR = 109 mJ), thermal resistance (R_th(ch-C) = 1.49 °C/W), and gate charge (Q_G = 61 nC) for efficient PWM control in hard-switched topologies.

Technical Context

The 2SK4146-S19-AY employs a planar vertical DMOS structure optimized for low R_DS(on) and robust unclamped inductive switching (UIS) capability. Its gate threshold voltage (V_GS(off) = 2.0–4.0 V) ensures reliable turn-on with standard 10 V logic-level drive, while C_iss = 3500 pF and Q_GD/Q_GS ratio of ~1.25 support stable high-speed switching up to 100 kHz in hard-switched converters.

Thermal design centers on case-mounted heat sinking: R_th(ch-C) = 1.49 °C/W enables 84 W continuous dissipation at T_C = 25°C, while R_th(ch-A) = 83.3 °C/W limits ambient-rated operation to 1.5 W without forced cooling. The device's body diode exhibits t_rr = 58 ns and Q_rr = 125 nC, suitable for synchronous rectification but not ultra-high-frequency ZVS applications.

Key Specifications

Pinout & Package

2SK4146-S19-AY uses a standard TO-220 package (S19 tube packing) with isolated metal tab (Drain-connected fin). The case is electrically connected to Drain, requiring insulating mounting hardware when Drain is not at chassis ground.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTH80N10L2 and IRFP4110PBF, the 2SK4146-S19-AY offers balanced trade-offs: lower Q_G than IXTH80N10L2 for faster switching, higher E_AR than IRFP4110PBF for snubberless inductive loads, and TO-220 compatibility with legacy industrial heatsinks.

Availability

2SK4146-S19-AY is available at Aetrix Electronics and suitable for industrial motor drives, high-current power supplies, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for 2SK4146-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and power devices for industrial, automotive, and infrastructure markets.

The 2SK4146-S19-AY belongs to Renesas' discrete power MOSFET product line, engineered for ruggedized high-current switching in factory automation, power conversion, and electromechanical control systems.

FAQ

What is the maximum continuous drain current rating for the 2SK4146-S19-AY?

The 2SK4146-S19-AY has a maximum continuous drain current (I_D(DC)) of ±80 A at T_C = 25°C. This rating assumes proper heatsinking to maintain case temperature at or below 25°C; derating applies above that temperature per the datasheet's PT vs. TC curve. At T_C = 100°C, usable I_D(DC) drops to approximately 45 A. The 2SK4146-S19-AY must be mounted on a heatsink capable of sustaining R_th(ch-C) ≤ 1.49 °C/W to achieve full 80 A capability.

Does the 2SK4146-S19-AY have avalanche capability, and how is it specified?

Yes, the 2SK4146-S19-AY is rated for repetitive unclamped inductive switching (UIS) with I_AR = 33 A and E_AR = 109 mJ under defined test conditions (T_ch = 25°C, V_DD = 38 V, R_G = 25 Ω, L = 100 μH). This specification validates its use in snubberless solenoid, relay, and motor phase-leg switching. The 2SK4146-S19-AY does not require external avalanche protection in these applications when operated within its absolute maximum ratings.

What is the gate threshold voltage range for the 2SK4146-S19-AY, and how does it affect drive requirements?

The gate-to-source cutoff voltage (V_GS(off)) for the 2SK4146-S19-AY is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This means the device begins conducting significantly above ~2.5 V and achieves full enhancement near 10 V. Standard 5 V logic cannot reliably drive the 2SK4146-S19-AY into low-R_DS(on) region; a 10–15 V gate driver is required to achieve the rated 10.1 mΩ. The 2SK4146-S19-AY is not a logic-level MOSFET.

Can the 2SK4146-S19-AY be used in parallel configurations, and what precautions apply?

Yes, the 2SK4146-S19-AY supports paralleling for higher current capacity, but requires matched gate resistors (R_G), symmetrical PCB layout, and individual source inductance minimization to ensure current sharing. Its positive temperature coefficient of R_DS(on) (increasing with channel temperature) aids thermal stability during parallel operation. For designs using multiple 2SK4146-S19-AY units, ensure identical heatsink contact resistance and gate drive timing to prevent dynamic imbalance. Derate total current by 15% versus sum of individual ratings.

Is the metal tab on the 2SK4146-S19-AY package electrically isolated, and what is its connection?

No, the metal tab on the 2SK4146-S19-AY TO-220 package is not electrically isolated-it is internally connected to the Drain terminal. This is confirmed by the "Equivalent Circuit" diagram on page 6 of the datasheet and the pinout labeling (Pin 2 = Drain, Pin 4 = Fin/Drain). When mounting the 2SK4146-S19-AY to a heatsink, electrical isolation (e.g., mica washer + thermal grease or isolating pad) is mandatory unless the heatsink is held at Drain potential. Failure to isolate may cause short-circuit faults in grounded-source topologies.