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Renesas 2SK4150TZ-E
- Part No.:
- 2SK4150TZ-E
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
2SK4150TZ-E.pdf
- Description:
- 2SK4150TZ - N-CHANNEL POWER MOSF
- Quantity:
- Payment:
- Shipping:
Inventory:19,000
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Product details
Overview
2SK4150TZ-E from Renesas Electronics is a silicon N-channel MOSFET designed for high-speed power switching in low-voltage, low-current applications. It features 4.0 Ω typical RDS(on) at VGS = 4 V and ID = 0.2 A, supports 2.5 V gate drive capability, and operates with low drive current - enabling efficient control in compact DC-DC converters and LED drivers.
For engineers reviewing the 2SK4150TZ-E datasheet, 2SK4150TZ-E pinout, 2SK4150TZ-E application, or 2SK4150TZ-E equivalent, this device is selected for its low-threshold gate drive compatibility, fast switching (td(on) = 17 ns, tf = 36 ns), and TO-92(1) package suitability for space-constrained board-level power stages.
Technical Context
This discrete MOSFET uses a planar vertical structure optimized for low RDS(on) and fast transient response. Its gate threshold voltage range (VGS(off) = 0.5–1.5 V) enables reliable turn-on with logic-level signals, while the integrated body-drain diode (VDF = 0.8 V typ. at IF = 0.4 A) supports freewheeling in inductive loads.
Thermal performance is defined by θch-a = 166.7 °C/W and Tch = 150 °C maximum, with safe operating area (SOA) limited by RDS(on) at pulse widths ≥10 μs. The device is rated for VDSS = 250 V and ID = 0.4 A continuous, making it suitable for non-automotive, standard-grade power switching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 250 V - Withstands up to 250 V drain-source blocking voltage, supporting off-line auxiliary supplies and 24 V industrial bus interfaces. |
| RDS(on) (typ) | 4.0 Ω at VGS = 4 V, ID = 0.2 A - Delivers low conduction loss in sub-500 mA switching paths, minimizing thermal rise in TO-92 package. |
| td(on)/tf | 17 ns / 36 ns - Enables >5 MHz switching in resonant or PWM topologies where gate charge (Qg = 3.7 nC) and capacitance (Ciss = 80 pF) are critical. |
| VGS(th) | 0.5–1.5 V - Ensures robust turn-on with 2.5 V–3.3 V microcontroller GPIOs without level-shifting circuitry. |
| Pch | 0.75 W - Maximum channel dissipation limits usable DC load current to ~0.4 A at ambient temperature, requiring derating above 25°C. |
| Package | TO-92(1) / PRSS0003DA-A - Through-hole radial leaded package with 12.7 mm lead spacing, compatible with legacy PCB layouts and manual assembly. |
Pinout & Package
2SK4150TZ-E uses the TO-92(1) package (RENESAS code PRSS0003DA-A), a three-lead through-hole plastic case with standardized pin 1–3 orientation. Lead forming follows radial taping specification per ordering info: 12.7 mm lead length, 2.5 mm pitch between leads 1 and 2.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (left, when flat side facing) | Source | Reference node for gate drive and current return path; internally connected to substrate; must be tied to lowest potential in half-bridge or low-side switch configuration. |
| 2 (center) | Drain | High-side connection point for switched load; carries full load current and withstands VDSS; requires thermal relief on PCB if operating near Pch limit. |
| 3 (right) | Gate | Control terminal with ±10 V absolute max rating; sensitive to ESD (per Note 3); requires series resistor (≥10 Ω) to damp ringing and limit peak gate current during switching. |
Key Features
| Feature | Design Value |
|---|---|
| 2.5 V gate drive compatibility | Enables direct interface with 2.5 V/3.3 V logic families and low-power MCUs without gate driver ICs, reducing BOM count and layout complexity. |
| Low RDS(on) × Qg product | ~14.8 Ω·nC - Balances conduction and switching losses for high-efficiency operation in 100 kHz–2 MHz DC-DC converters. |
| Fast body diode recovery (trr = 70 ns) | Reduces reverse recovery loss and EMI in flyback or buck-boost topologies where the intrinsic diode conducts during dead time. |
| Low input capacitance (Ciss = 80 pF) | Minimizes gate drive power and improves noise immunity in high-impedance control environments, especially with long PCB traces. |
Applications
| LED Constant-Current Driver | Low-Power DC-DC Converter Switch |
|---|---|
|
Use Scenario: Driving single or parallel strings of indicator LEDs in industrial HMI panels with 12–24 V supply rails. IC Role / Device Role / Timing Role: Low-side switching element controlled by PWM signal from MCU; handles <500 mA pulsed current with minimal voltage drop. Use Value: 4.0 Ω RDS(on) ensures ≤0.2 V dropout at 50 mA, preserving forward voltage margin for red/green/blue LEDs while maintaining thermal safety in TO-92. |
Use Scenario: High-frequency synchronous rectifier or main switch in isolated 5 V/12 V offline auxiliary power supplies (e.g., for PLC I/O modules). IC Role / Device Role / Timing Role: Primary power switch in flyback or forward converter operating at 250–500 kHz; leverages fast tf = 36 ns and low Qg = 3.7 nC. Use Value: 250 V VDSS rating allows safe operation across reflected output voltage spikes; SOA curve supports 100 μs pulses at full load without secondary breakdown. |
| Microcontroller-Driven Load Switch | EMI-Sensitive Sensor Power Gating |
|
Use Scenario: Enabling/disabling peripheral sensors or communication transceivers in battery-powered IoT nodes using 3.3 V GPIO control. IC Role / Device Role / Timing Role: Low-side load switch activated by MCU pin; provides clean on/off control with no shoot-through risk. Use Value: VGS(th) range (0.5–1.5 V) guarantees turn-on at 2.5 V logic levels; low IDSS (<1 μA) prevents leakage-induced battery drain during sleep mode. |
Use Scenario: Power gating for precision analog sensor front-ends (e.g., thermocouple amplifiers) where switching noise must be minimized. IC Role / Device Role / Timing Role: Controlled power rail switch placed upstream of LDO regulators to eliminate standby current and reduce conducted EMI. Use Value: Low Ciss = 80 pF and Crss = 3.4 pF minimize capacitive coupling into adjacent analog traces; soft turn-on via gate resistor limits di/dt-induced interference. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 2SK3568-6-TB-E | Higher VDSS = 500 V, higher RDS(on) = 12 Ω (at VGS = 10 V), TO-92 package | Better suited for 100 VAC-derived supplies; less efficient at low VGS due to higher threshold (~2.0 V min) | Select when higher voltage margin is required and gate drive ≥5 V is available. |
| RSQ020N03TR | Same VDSS = 30 V, much lower RDS(on) = 0.12 Ω, SOT-23 package, logic-level | Optimized for ≤3.3 V systems and surface-mount assembly; unsuitable for >30 V operation | Choose for ultra-low-loss, high-density designs where voltage stress is strictly ≤30 V. |
Compared with 2SK4150TZ-E, 2SK3568-6-TB-E trades lower RDS(on) for higher voltage rating and reduced gate sensitivity, while RSQ020N03TR offers superior conduction efficiency in low-voltage SMT layouts but lacks the 250 V capability essential for industrial auxiliary power.
Availability
2SK4150TZ-E is available at Aetrix Electronics and suitable for LED drivers, low-power DC-DC converters, and microcontroller-based load switching applications requiring stable component supply and long-term industrial availability.
Supply support for 2SK4150TZ-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics is a global semiconductor leader specializing in microcontrollers, analog, power, and timing solutions for industrial, automotive, and infrastructure markets.
The 2SK4150TZ-E belongs to Renesas' legacy silicon MOSFET product line targeting cost-sensitive, reliability-focused power switching in standard-grade applications such as office equipment, test instrumentation, and consumer electronics.
FAQ
What is the maximum continuous drain current rating for the 2SK4150TZ-E?
The 2SK4150TZ-E has a continuous drain current rating of 0.4 A at Ta = 25°C. This value decreases with rising ambient or case temperature due to its 0.75 W channel dissipation limit and 166.7 °C/W thermal impedance. At 75°C ambient, derated current drops to approximately 0.25 A - always verify against the SOA graph on page 3 of the REJ03G1909-0300 datasheet when designing for sustained load conditions.
Does the 2SK4150TZ-E have a built-in body diode, and what are its characteristics?
Yes, the 2SK4150TZ-E integrates a body-drain diode with forward voltage VDF = 0.8 V typical at IF = 0.4 A and reverse recovery time trr = 70 ns under specified test conditions (diF/dt = 100 A/μs). This diode supports freewheeling in inductive switching circuits but is not rated for continuous conduction - use external Schottky diodes for high-repetition-rate or high-current recovery paths.
Can the 2SK4150TZ-E be driven directly from a 3.3 V microcontroller GPIO?
Yes, the 2SK4150TZ-E is explicitly characterized for 2.5 V gate drive and has a VGS(off) range of 0.5–1.5 V, ensuring reliable turn-on with 3.3 V logic. However, RDS(on) increases to 4.1 Ω typical at VGS = 2.5 V - confirm that resulting conduction loss and junction temperature remain within limits for your specific ID and duty cycle.
What is the recommended gate resistor value for the 2SK4150TZ-E in a 500 kHz switching application?
A 10 Ω series gate resistor is specified in the datasheet's switching time test circuit (page 5) and balances switching speed against ringing suppression. For 500 kHz operation, this value limits peak gate current while keeping td(on) and tf near their typical values (17 ns and 36 ns). Increase to 22–47 Ω only if EMI or overshoot is observed - avoid values >100 Ω unless slow turn-on is intentionally required for inrush limiting.
Is the 2SK4150TZ-E suitable for automotive applications?
No, the 2SK4150TZ-E is classified as a "Standard" quality grade device per Renesas' documentation (page 6, Notice #7), intended for computers, office equipment, and industrial robots - not transportation or safety-critical systems. It lacks AEC-Q101 qualification, extended temperature screening, or automotive-specific reliability testing; use Renesas' RAJ or RV series for qualified automotive MOSFETs.
2SK4150TZ-E Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 250 V
- Current - Continuous Drain (Id) @ 25°C:
- 400mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4V
- Rds On (Max) @ Id, Vgs:
- 5.7Ohm @ 200mA, 4V
- Vgs(th) (Max) @ Id:
- 1.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 3.7 nC @ 4 V
- Vgs (Max):
- ±10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 80 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 750mW (Ta)
- Operating Temperature:
- 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92
2SK4150TZ-E FAQ
1.How can I place an order for 2SK4150TZ-E through Aetrix?
Please submit a Request for Quotation (RFQ) for 2SK4150TZ-E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 2SK4150TZ-E reliable?
The price and inventory of 2SK4150TZ-E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK4150TZ-E is usually 5 days.
3.What payment methods are accepted for 2SK4150TZ-E?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK4150TZ-E transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 2SK4150TZ-E?
2SK4150TZ-E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 2SK4150TZ-E order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 2SK4150TZ-E?
For technical support, including 2SK4150TZ-E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK4150TZ-E requirements.
6.How does Aetrix verify that 2SK4150TZ-E is sourced from the original manufacturer or authorized distributors?
All 2SK4150TZ-E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK4150TZ-E meets industry standards.
7.What is the process for return or replacement of 2SK4150TZ-E?
All 2SK4150TZ-E units undergo pre-shipment inspection (PSI). If there is an issue with 2SK4150TZ-E, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 2SK4150TZ-E part is unused and in its original packaging.
Return procedure for 2SK4150TZ-E:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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