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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Renesas 2SK4201-S19-AY

Name: 2SK4201-S19-AY
Brand: Renesas
SKU: 2SK4201-S19-AY
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 2SK4201-S19-AY

Manufacturer:: Renesas

Category:: FETs, MOSFETs

Package:: -

Datasheet:: 2SK4201-S19-AY.pdf

Description:: N-CHANNEL POWER MOSFET

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Product details

Overview

2SK4201-S19-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drive inverters. It delivers R_DS(on) = 13 mΩ max at V_GS = 10 V and I_D = 40 A, supports ±80 A DC drain current, and features TO-220 package with integrated drain-fin thermal path for high-power dissipation up to 125 W at T_C = 25°C.

For engineers reviewing the 2SK4201-S19-AY datasheet, 2SK4201-S19-AY pinout, 2SK4201-S19-AY application, or 2SK4201-S19-AY equivalent, key selection criteria include avalanche energy rating (E_AS = 180 mJ), gate charge (Q_G = 82 nC), body diode reverse recovery (t_rr = 73 ns), and channel-to-case thermal resistance (R_th(ch–C) = 1.0°C/W).

Technical Context

This device uses a planar vertical DMOS structure optimized for low conduction loss and fast switching in hard-switched topologies. Its gate threshold voltage (V_GS(off) = 2.0–4.0 V) enables robust TTL/CMOS-level drive compatibility, while its 4700 pF input capacitance (C_iss) and 27 nC gate-to-drain charge (Q_GD) define turn-on/turn-off timing behavior under 0 Ω gate drive.

The integrated body diode exhibits VF(S–D) = 0.95–1.5 V at I_F = 80 A and t_rr = 73 ns with Q_rr = 205 nC, supporting synchronous rectification and freewheeling in half-bridge configurations. Avalanche-rated operation (I_AS = 42.4 A, E_AS = 180 mJ) permits unclamped inductive switching without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage in off-state; suitable for 48 V and 60 V bus systems with safety margin.
R_DS(on) max	13 mΩ at V_GS = 10 V, I_D = 40 A - Enables <1.3 W conduction loss at 40 A, reducing heatsink requirements.
I_D(DC)	±80 A at T_C = 25°C - Supports high-current output stages in UPS, welders, and servo drives.
E_AS	180 mJ - Rated single-pulse avalanche energy allows reliable operation during inductive load turn-off transients.
Q_G	82 nC - Determines gate driver power requirement; ~0.82 mW average drive power at 100 kHz switching.
t_r/t_f	12 ns / 11 ns - Fast edge rates reduce switching losses but require careful PCB layout to suppress ringing.
R_th(ch–C)	1.0°C/W - Enables direct mounting to heatsink; 125 W dissipation yields only 125°C ΔT above case temperature.

Pinout & Package

2SK4201-S19-AY is housed in a TO-220 package with integral metal fin acting as both drain terminal and thermal path. The package weighs 1.9 g and features pure Sn (lead-free) plating per JEDEC J-STD-609.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Gate	Control electrode; requires ≤±20 V gate-source voltage; sensitive to ESD-must be handled with grounding precautions.
2 (Center)	Drain	Main high-side current path; electrically connected to metal fin-must be isolated from heatsink unless system ground referenced.
3 (Right)	Source	Power return node; defines reference for gate drive; carries full load current and must use low-inductance layout.
Fin (Back)	Drain (Thermal)	Exposed metal surface tied internally to Drain pin; primary heat transfer path to heatsink; requires thermal interface material.

Key Features

Feature	Design Value
Low R_DS(on) with high current rating	13 mΩ max at 40 A enables >98% efficiency in 48 V/50 A DC–DC stages with minimal thermal derating.
Avalanche-rated ruggedness	180 mJ single-pulse E_AS supports reliable operation in unclamped inductive switching without external protection.
Fast switching with low Q_GD	27 nC gate-to-drain charge minimizes Miller plateau duration, enabling clean 100+ kHz hard-switching.
Integrated body diode with low Q_rr	205 nC reverse recovery charge reduces diode commutation loss and EMI in bridge-leg freewheeling paths.
TO-220 with drain-fin thermal design	1.0°C/W channel-to-case resistance allows direct bolt-down heatsinking without insulating washers if drain-isolated.

Applications

Industrial DC Motor Drives	Uninterruptible Power Supplies (UPS)
Use Scenario: Half-bridge inverter stage driving 3 kW brushed DC motors in factory automation conveyors. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 80 A peak current with 100 kHz PWM modulation. Use Value: Low R_DS(on) and fast t_r/t_f minimize conduction + switching losses, extending runtime and reducing heatsink mass by 35% vs. legacy MOSFETs.	Use Scenario: Bidirectional DC–AC inverter stage converting 48 V battery bank to 120 V AC for critical IT loads. IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch in dual-active-bridge topology operating at 50–100 kHz. Use Value: Body diode t_rr = 73 ns and Q_rr = 205 nC enable zero-voltage switching transitions, cutting inverter losses by 22% over Si-based alternatives.
High-Current DC–DC Converters	Electric Vehicle Onboard Chargers (OBC)
Use Scenario: Primary-side switch in 3.3 kW isolated LLC resonant converter for telecom rectifiers. IC Role / Device Role / Timing Role: Main power switch subjected to 100 V bus, 60 A peak current, and repetitive avalanche stress during startup. Use Value: E_AS = 180 mJ and R_th(ch–C) = 1.0°C/W ensure stable operation across 100,000-cycle lifetime without thermal runaway or avalanche failure.	Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage converting 400 V DC to 48 V battery charging rail. IC Role / Device Role / Timing Role: Low-side rectifier switch conducting 80 A continuous current with bidirectional conduction capability. Use Value: VF(S–D) = 0.95 V typical and 13 mΩ R_DS(on) reduce forward and conduction losses by 40% versus Schottky solutions, improving OBC efficiency from 94.2% to 95.8%.

Industrial DC Motor Drives

Uninterruptible Power Supplies (UPS)

Use Scenario: Half-bridge inverter stage driving 3 kW brushed DC motors in factory automation conveyors.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 80 A peak current with 100 kHz PWM modulation.

Use Value: Low R_DS(on) and fast t_r/t_f minimize conduction + switching losses, extending runtime and reducing heatsink mass by 35% vs. legacy MOSFETs.

Use Scenario: Bidirectional DC–AC inverter stage converting 48 V battery bank to 120 V AC for critical IT loads.

IC Role / Device Role / Timing Role: Synchronous rectifier and inverter switch in dual-active-bridge topology operating at 50–100 kHz.

Use Value: Body diode t_rr = 73 ns and Q_rr = 205 nC enable zero-voltage switching transitions, cutting inverter losses by 22% over Si-based alternatives.

High-Current DC–DC Converters

Electric Vehicle Onboard Chargers (OBC)

Use Scenario: Primary-side switch in 3.3 kW isolated LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch subjected to 100 V bus, 60 A peak current, and repetitive avalanche stress during startup.

Use Value: E_AS = 180 mJ and R_th(ch–C) = 1.0°C/W ensure stable operation across 100,000-cycle lifetime without thermal runaway or avalanche failure.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage converting 400 V DC to 48 V battery charging rail.

IC Role / Device Role / Timing Role: Low-side rectifier switch conducting 80 A continuous current with bidirectional conduction capability.

Use Value: VF(S–D) = 0.95 V typical and 13 mΩ R_DS(on) reduce forward and conduction losses by 40% versus Schottky solutions, improving OBC efficiency from 94.2% to 95.8%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF10	R_DS(on) = 12.5 mΩ (V_GS = 10 V), Q_G = 120 nC, TO-220 package, no avalanche rating specified	Lacks documented E_AS rating; unsuitable for unclamped inductive switching	Prefer 2SK4201-S19-AY where avalanche robustness is required in motor drive or relay-driving circuits.
IXTH80N10L2	R_DS(on) = 10.5 mΩ, Q_G = 105 nC, TO-247 package, E_AS = 220 mJ, higher cost and larger footprint	Superior avalanche margin but requires PCB redesign due to TO-247 mechanical form factor	Choose 2SK4201-S19-AY when TO-220 footprint and cost sensitivity outweigh marginal R_DS(on) gain.

Compared with STP80NF10 and IXTH80N10L2, the 2SK4201-S19-AY offers balanced trade-offs: certified avalanche ruggedness in standard TO-220, lower Q_G than IXTH80N10L2 for easier gate drive, and tighter R_DS(on) tolerance than STP80NF10-making it optimal for space-constrained industrial inverters requiring reliability without redesign.

Availability

2SK4201-S19-AY is available at Aetrix Electronics and suitable for industrial motor drives, uninterruptible power supplies, high-current DC–DC converters, and onboard EV chargers requiring stable component supply and long-term lifecycle support.

Supply support for 2SK4201-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and mixed-signal ICs for industrial and automotive markets.

The 2SK4201 belongs to Renesas' legacy high-current discrete MOSFET product line, engineered specifically for ruggedized industrial switching applications demanding high avalanche energy, low on-resistance, and proven thermal performance in TO-220 packages.

FAQ

What is the maximum continuous drain current rating for the 2SK4201-S19-AY?

The 2SK4201-S19-AY is rated for ±80 A DC drain current at case temperature T_C = 25°C. This rating assumes proper heatsinking with R_th(ch–C) = 1.0°C/W. At elevated case temperatures, current must be derated linearly per the datasheet's total power dissipation vs. case temperature curve-e.g., at T_C = 100°C, the usable I_D(DC) drops to approximately ±42 A. Always verify thermal design using actual board layout and ambient conditions before finalizing the 2SK4201-S19-AY implementation.

Does the 2SK4201-S19-AY have a specified avalanche energy rating?

Yes, the 2SK4201-S19-AY has a fully characterized single-pulse avalanche energy rating of E_AS = 180 mJ, measured under standardized conditions (V_DD = 50 V, I_AS = 42.4 A, L = 100 μH, R_G = 25 Ω, T_ch = 25°C). This specification confirms its suitability for inductive load switching without external snubbers. The 2SK4201-S19-AY datasheet explicitly lists this parameter in the Absolute Maximum Ratings table, distinguishing it from MOSFETs lacking formal avalanche characterization.

What is the gate-to-source threshold voltage range for the 2SK4201-S19-AY?

The gate-to-source threshold voltage (V_GS(off)) for the 2SK4201-S19-AY is specified as 2.0–4.0 V at V_DS = 10 V and I_D = 1 mA. This range ensures reliable turn-on with standard 5 V or 10 V logic-level gate drivers while maintaining noise immunity against spurious turn-on. The typical value falls near 3.0 V, and the spread reflects process variation across production lots-designers should size gate resistors and driver strength to guarantee full enhancement across this entire range when using the 2SK4201-S19-AY in critical switching nodes.

Can the 2SK4201-S19-AY be used in synchronous rectification applications?

Yes, the 2SK4201-S19-AY supports synchronous rectification via its integrated body diode and low R_DS(on). Its body diode forward voltage VF(S–D) is 0.95–1.5 V at I_F = 80 A and V_GS = 0 V, and reverse recovery time t_rr is 73 ns with Q_rr = 205 nC. These parameters allow efficient replacement of Schottky diodes in secondary-side rectification of LLC or phase-shifted full-bridge converters. When using the 2SK4201-S19-AY for synchronous rectification, ensure gate drive timing avoids shoot-through and accounts for diode conduction delay.

Is the 2SK4201-S19-AY lead-free and RoHS compliant?

Yes, the 2SK4201-S19-AY uses pure Sn (tin) lead plating and is Pb-free per the ordering note "Note Pb-free (This product does not contain Pb in the external electrode)". It complies with the EU RoHS Directive (2011/65/EU) and related environmental regulations. The marking "Pb-free plating marking" appears on the device body, and Renesas confirms RoHS compliance in its official documentation. For full substance declarations or REACH SVHC reporting, refer to Renesas' material composition database using the exact part number 2SK4201-S19-AY.

2SK4201-S19-AY Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

2SK4201-S19-AY FAQ

1.How can I place an order for 2SK4201-S19-AY through Aetrix?

Please submit a Request for Quotation (RFQ) for 2SK4201-S19-AY on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 2SK4201-S19-AY reliable?

The price and inventory of 2SK4201-S19-AY are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 2SK4201-S19-AY is usually 5 days.

3.What payment methods are accepted for 2SK4201-S19-AY?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 2SK4201-S19-AY transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 2SK4201-S19-AY?

2SK4201-S19-AY orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 2SK4201-S19-AY order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 2SK4201-S19-AY?

For technical support, including 2SK4201-S19-AY datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 2SK4201-S19-AY requirements.

6.How does Aetrix verify that 2SK4201-S19-AY is sourced from the original manufacturer or authorized distributors?

All 2SK4201-S19-AY products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 2SK4201-S19-AY meets industry standards.

7.What is the process for return or replacement of 2SK4201-S19-AY?

All 2SK4201-S19-AY units undergo pre-shipment inspection (PSI). If there is an issue with 2SK4201-S19-AY, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 2SK4201-S19-AY part is unused and in its original packaging.

Return procedure for 2SK4201-S19-AY:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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