Renesas 2SK4202-S19-AY

Overview

2SK4202-S19-AY from Renesas Electronics is an N-channel power MOSFET designed for high-current DC switching in industrial power supplies and motor drives. It delivers 84 A DC drain current, 60 V drain-source breakdown voltage, and ultra-low 7.5 mΩ R_DS(on) at V_GS = 10 V, enabling efficient high-power switching in TO-220 packaged systems.

For engineers reviewing the 2SK4202-S19-AY datasheet, 2SK4202-S19-AY pinout, 2SK4202-S19-AY application, or 2SK4202-S19-AY equivalent, key selection criteria include avalanche energy rating (137 mJ), gate charge (106 nC), thermal resistance (1.20 °C/W channel-to-case), and Pb-free Sn-plated TO-220 packaging compatibility with wave soldering per J-STD-020.

Technical Context

This discrete power switch operates as a unidirectional high-side or low-side switch with integrated body diode (V_F(S-D) = 1.5 V max at 84 A). Its gate threshold voltage range (2.0–4.0 V) supports standard 3.3 V/5 V/10 V logic-level drive, while its 6300 pF input capacitance and 106 nC total gate charge define switching speed constraints in hard-switched topologies.

The device features single-pulse avalanche capability (37 A, 137 mJ) and is rated for 150 °C channel temperature. Thermal design must account for R_th(ch-C) = 1.20 °C/W and R_th(ch-A) = 83.3 °C/W, with derating applied above 25 °C case temperature per published curves.

Key Specifications

Pinout & Package

2SK4202-S19-AY is housed in a Pb-free Sn-plated TO-220 package (1.9 g mass) with integral metal tab (Drain-connected fin) for mechanical mounting and thermal conduction. The package conforms to JEDEC TO-220AB outline with 3.6 mm lead spacing and 15.9 mm overall height.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTH84N60L2 and STP84NF55-08, the 2SK4202-S19-AY offers optimal balance of 60 V rating, 7.5 mΩ conduction loss, and TO-220 mechanical fit for industrial 48 V power systems-where voltage margin, thermal density, and board-space constraints jointly govern selection.

Availability

2SK4202-S19-AY is available at Aetrix Electronics and suitable for industrial power supplies, brushless DC motor drives, and uninterruptible power systems requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for 2SK4202-S19-AY includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a global semiconductor leader formed in 2010 through the merger of NEC Electronics and Renesas Technology, specializing in microcontrollers, analog, power, and memory solutions.

The 2SK4202 belongs to Renesas' legacy high-current power MOSFET product line, engineered for ruggedized industrial switching applications including power conversion, motor control, and solid-state protection-prioritizing avalanche robustness and thermal reliability over ultra-high-frequency operation.

FAQ

What is the maximum continuous drain current rating for the 2SK4202-S19-AY?

The 2SK4202-S19-AY is rated for ±84 A DC drain current at case temperature T_C = 25°C. This rating assumes adequate heatsinking to maintain channel temperature ≤150°C. Derating is required above 25°C case temperature per the published derating curve, dropping to ~40 A at T_C = 100°C. The 2SK4202-S19-AY datasheet specifies this value under strict thermal test conditions using a copper heatsink.

Does the 2SK4202-S19-AY have avalanche capability, and how is it specified?

Yes, the 2SK4202-S19-AY is characterized for single-pulse avalanche with I_AS = 37 A and E_AS = 137 mJ at T_ch = 25°C, V_DD = 30 V, R_G = 25 Ω, and L = 100 μH. This rating is measured under controlled lab conditions and reflects energy absorption during inductive turn-off. The 2SK4202-S19-AY does not guarantee repetitive avalanche operation; designers must ensure stress remains within single-pulse limits.

What is the gate threshold voltage range for the 2SK4202-S19-AY, and how does it affect drive requirements?

The 2SK4202-S19-AY has a gate-to-source cutoff voltage V_GS(off) of 2.0–4.0 V at I_D = 1 mA and V_DS = 10 V. This means full enhancement (R_DS(on) ≤ 7.5 mΩ) requires V_GS ≥ 10 V. Logic-level drive (e.g., 3.3 V or 5 V) will result in partial turn-on and excessive conduction loss; the 2SK4202-S19-AY must be driven with ≥10 V gate voltage for optimal performance.

Can the 2SK4202-S19-AY be used in synchronous rectification applications?

The 2SK4202-S19-AY contains an integrated body diode with V_F(S-D) = 1.0–1.5 V at I_F = 84 A and t_rr = 47 ns, making it usable for low-frequency synchronous rectification where diode conduction dominates. However, its 106 nC gate charge and 6300 pF C_iss increase switching losses above 100 kHz; dedicated low-Q_G synchronous rectifiers are preferred for high-frequency SMPS. The 2SK4202-S19-AY is not optimized for this role but can function in cost-sensitive, medium-frequency designs.

What thermal resistance values apply to the 2SK4202-S19-AY, and how are they measured?

The 2SK4202-S19-AY specifies R_th(ch-C) = 1.20 °C/W (channel-to-case) and R_th(ch-A) = 83.3 °C/W (channel-to-ambient). R_th(ch-C) is measured with the metal tab mounted to a large copper heatsink using thermal compound; R_th(ch-A) is measured with the device free-standing in still air. These values are critical for calculating junction temperature rise: T_j = T_C + P_diss × R_th(ch-C). The 2SK4202-S19-AY datasheet provides transient thermal impedance curves for pulsed operation.