Renesas 2SK970-E

Overview

2SK970-E from Toshiba is a silicon N-channel power MOSFET designed for high-speed switching in DC-DC converters and motor drive circuits, featuring 60 V V_DSS, 10 A continuous drain current, 0.12 Ω R_DS(on) at V_GS = 10 V, and 4 V gate threshold compatibility with 5 V logic-level drive.

For engineers reviewing the 2SK970-E datasheet, 2SK970-E pinout, 2SK970-E application, or 2SK970-E equivalent, key selection considerations include its low on-resistance at 4 V gate drive, fast switching times (t_d(on) = 5 ns, t_f = 90 ns), body diode reverse recovery performance (t_rr = 125 ns), and TO-220AB package thermal capability (P_ch = 30 W at T_C = 25°C).

Technical Context

The 2SK970-E operates as a voltage-controlled unidirectional power switch with enhancement-mode N-channel structure, optimized for hard-switched topologies requiring low gate charge (Q_g ≈ 20 nC) and minimal drive current. Its V_GS(off) range (1.0–2.0 V) ensures reliable turn-off margin while enabling direct interface with 5 V microcontrollers.

Thermal design is constrained by channel temperature limits (T_ch = 150°C) and transient thermal impedance (θ_ch–c = 4.17°C/W), with safe operating area (SOA) defined up to 100 V and 10 A under pulse conditions (PW ≤ 10 µs). The integrated body diode supports freewheeling in inductive loads like solenoids and motor windings.

Key Specifications

Pinout & Package

Package: TO-220AB - Through-hole, single-ended flanged package with drain-connected metal tab for direct heatsinking and mechanical mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP10NK60ZFP and IRFZ44NPBF, the 2SK970-E uniquely balances 60 V rating, 4 V gate threshold, and 0.17 Ω R_DS(on) at low V_GS, making it optimal for space-constrained 5 V-controlled motor and solenoid drivers where gate drive simplicity and thermal efficiency are prioritized over ultra-high current or ultra-high voltage.

Availability

2SK970-E is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid drive applications requiring stable component supply, long-term industrial availability, and consistent parametric performance across production lots.

Supply support for 2SK970-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs with emphasis on reliability, thermal performance, and industrial-grade qualification.

The 2SK970-E belongs to Toshiba's legacy silicon power MOSFET product line, engineered specifically for high-efficiency, medium-voltage switching in cost-sensitive industrial and automotive auxiliary systems.

FAQ

What is the gate threshold voltage range for the 2SK970-E?

The 2SK970-E has a gate-to-source cutoff voltage (V_GS(off)) range of 1.0 V to 2.0 V at I_D = 1 mA and V_DS = 10 V. This low threshold enables full enhancement with 4 V gate drive and ensures compatibility with standard 5 V logic outputs without level shifting. The specified range provides design margin against process variation and temperature drift across industrial operating conditions.

Can the 2SK970-E be used with a 3.3 V microcontroller output?

The 2SK970-E is not reliably enhanced at 3.3 V gate drive - its maximum V_GS(off) is 2.0 V, but R_DS(on) rises sharply below 4 V, reaching 0.22 Ω max at V_GS = 4 V and increasing significantly at lower voltages. For 3.3 V MCU interfaces, a gate driver or level shifter is required to ensure low conduction loss and thermal stability in continuous operation.

What is the maximum continuous drain current for the 2SK970-E at 75°C case temperature?

At T_C = 75°C, the 2SK970-E's maximum continuous drain current is derated to approximately 6.5 A, based on the linear power derating curve (30 W at 25°C → 0 W at 150°C). This value assumes proper heatsinking and accounts for R_DS(on) increase with temperature - actual usable current depends on layout, ambient, and thermal interface resistance.

Does the 2SK970-E have an integrated body diode, and what are its key ratings?

Yes, the 2SK970-E includes an integrated body diode rated for 10 A reverse drain current (I_DR) and 125 ns reverse recovery time (t_rr) at I_F = 10 A, di_F/dt = 50 A/µs, and V_GS = 0. The forward voltage (V_DF) is 1.2 V typical at I_F = 10 A. This diode supports freewheeling in inductive loads but is not optimized for synchronous rectification.

Is the drain pin of the 2SK970-E electrically connected to the metal flange?

Yes, in the TO-220AB package of the 2SK970-E, pin 2 (Drain) is internally connected to the metal flange. This requires electrical isolation (e.g., mica washer + thermal pad) when mounting to a grounded heatsink, unless the drain node is intentionally referenced to system ground. Failure to isolate may cause short-circuit or safety hazards in floating-drain configurations.