Renesas 2SK973L-E

Overview

2SK973L-E from Toshiba is a silicon N-channel MOSFET designed for high-speed power switching in DC-DC converters and motor drive circuits. It features 60 V V_DSS, 2 A continuous drain current, 0.25 Ω typical R_DS(on) at V_GS = 10 V, 4 V gate threshold compatibility, and DPAK-1 (TO-252) surface-mount package.

For engineers reviewing the 2SK973L-E datasheet, 2SK973L-E pinout, 2SK973L-E application, or 2SK973L-E equivalent, key selection criteria include low on-resistance at 4 V drive, fast switching times (td(on) = 4 ns), body diode recovery (trr = 70 ns), and thermal performance in compact power stages.

Technical Context

This MOSFET operates as a single N-channel enhancement-mode switch with gate-controlled conduction. Its 1.0–2.0 V V_GS(off) enables reliable turn-off at logic-level gate drives, while the 0.25 Ω R_DS(on) at 10 V and 0.40 Ω at 4 V supports efficient operation in 5 V-controlled systems.

The device integrates an intrinsic body diode with 1.0 V forward voltage at 2 A and 70 ns reverse recovery time, making it suitable for synchronous rectification and freewheeling in buck converters and solenoid drivers where diode conduction and recovery are critical.

Key Specifications

Pinout & Package

2SK973L-E uses the DPAK-1 (TO-252) surface-mount package with exposed drain pad for thermal management. Pin numbering follows standard DPAK layout: Pin 1 = Gate, Pins 2 & 4 = Drain (internally connected), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with IRLML6344TRPBF and DMN3025LSD-13, the 2SK973L-E offers higher 60 V blocking capability and DPAK thermal performance ideal for industrial 24 V systems, while maintaining 4 V gate compatibility-making it uniquely balanced for motor, solenoid, and mid-voltage DC-DC applications.

Availability

2SK973L-E is available at Aetrix Electronics and suitable for motor drive, DC-DC converter, and solenoid drive applications requiring stable component supply across industrial OEM production cycles.

Supply support for 2SK973L-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Toshiba Electronic Devices & Storage Corporation designs and manufactures discrete semiconductors, power devices, and logic ICs for industrial, automotive, and consumer applications.

The 2SK973L-E belongs to Toshiba's legacy silicon N-channel MOSFET product line targeting cost-sensitive, high-reliability power switching in motor control and power conversion systems.

FAQ

What is the maximum gate-to-source voltage rating for the 2SK973L-E?

The 2SK973L-E has a maximum gate-to-source voltage rating of ±20 V. This specification ensures safe operation under transient conditions and gate drive overshoot. Exceeding ±20 V risks permanent gate oxide damage. The device is rated for reliable enhancement-mode operation down to –20 V, supporting robust noise immunity in electrically noisy environments like motor drive circuits. Always observe this limit in both static and dynamic conditions when designing gate drive networks for the 2SK973L-E.

Can the 2SK973L-E be driven directly from a 5 V microcontroller GPIO?

Yes, the 2SK973L-E can be driven directly from a 5 V microcontroller GPIO. Its gate threshold voltage range is 1.0–2.0 V, and it achieves full enhancement with only 4 V gate drive-well within standard 5 V logic levels. With 0.40 Ω max R_DS(on) at V_GS = 4 V, it delivers low conduction loss without requiring external level shifters or gate drivers. This makes the 2SK973L-E especially suitable for space- and cost-constrained designs such as portable motor controllers and solenoid interfaces where simplicity and reliability are critical.

What is the body diode reverse recovery time (trr) of the 2SK973L-E, and why does it matter?

The 2SK973L-E has a body diode reverse recovery time (trr) of 70 ns under test conditions of IF = 2 A, V_GS = 0, and di_F/dt = 50 A/µs. This parameter directly impacts switching losses and EMI in topologies where the MOSFET's intrinsic diode conducts freewheeling current-such as buck converters, half-bridges, and inductive load drivers. A shorter trr reduces tail current and associated heat generation, improving efficiency and thermal stability. For the 2SK973L-E, 70 ns trr enables clean commutation in 300–500 kHz power stages without requiring external snubbers or diode paralleling.

What package type does the 2SK973L-E use, and how does it affect thermal performance?

The 2SK973L-E uses the DPAK-1 (TO-252) surface-mount package with an exposed drain pad. This package provides significantly better thermal conductivity than smaller packages like SOT-23 or SO-8 due to its large copper area and direct thermal path from the die to the PCB. With a channel-to-case thermal resistance (θ_ch–c) of 12.5 °C/W, the 2SK973L-E can dissipate up to 10 W at T_C = 25 °C. Proper PCB layout-including ≥1 in² of 2-oz copper connected to the drain pad-is essential to realize this thermal capability in real-world applications like motor drivers and DC-DC modules.

Is the 2SK973L-E suitable for use in a synchronous rectifier application?

Yes, the 2SK973L-E is suitable for synchronous rectifier applications, particularly in low-to-mid voltage DC-DC converters (e.g., 12 V input → 5 V output). Its low R_DS(on) (0.40 Ω max at 4 V), fast switching (td(on) = 4 ns, tf = 40 ns), and well-characterized body diode (V_DF = 1.0 V, trr = 70 ns) enable efficient replacement of Schottky diodes. When used as a synchronous rectifier, the 2SK973L-E must be driven with precise timing to avoid shoot-through; its 4 V gate compatibility simplifies integration with standard PWM controller gate drive outputs. Thermal performance in DPAK-1 further supports sustained operation under high-duty-cycle rectification loads.