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Renesas 3SK222-T2-A
- Part No.:
- 3SK222-T2-A
- Manufacturer:
- Renesas
- Category:
- FETs, MOSFETs
- Package:
- -
- Datasheet:
-
3SK222-T2-A.pdf
- Description:
- N-CHANNEL POWER MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:195,000
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Product details
Overview
3SK222-T2-A from NEC (now Renesas Electronics) is an N-channel silicon dual-gate MOSFET designed for RF amplification in VHF front-ends. It delivers 23 dB typical power gain at 200 MHz, 1.2 dB noise figure at 200 MHz, and operates with 6 V drain-source voltage and 10 mA drain current under standard test conditions. It is used in FM tuner and VHF TV tuner signal chains.
For engineers reviewing the 3SK222-T2-A datasheet, 3SK222-T2-A pinout, 3SK222-T2-A application, or 3SK222-T2-A equivalent, key selection criteria include dual-gate noise performance, cross-modulation suppression (CM = 92 dBµ), gate cutoff voltage tolerance (VG1S(off)/VG2S(off) ≤ +1.0 V), and 4-pin mini mold package compatibility with automatic mounting.
Technical Context
This dual-gate MOSFET uses independent gate control to suppress intermodulation distortion while enabling high gain and low-noise amplification in VHF receivers. Its enhancement-mode operation requires positive gate bias on both G1 and G2 relative to source, with VG1S(off) and VG2S(off) both specified up to +1.0 V.
The device achieves 23 dB power gain at 200 MHz with 1.2 dB NF1 and exhibits low input capacitance (Ciss = 4.3 pF typ.) and reverse transfer capacitance (Crss = 0.03 pF typ.), critical for stable broadband VHF amplifier design and image rejection in superheterodyne tuners.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSX | 18 V - Maximum drain-source voltage before breakdown; sets safe operating limit for VHF amplifier DC biasing. |
| NF1 | 1.2 dB @ 200 MHz - Low noise figure enables high sensitivity in FM/VHF tuner RF front-ends. |
| GPS | 23 dB @ 200 MHz - High power gain reduces need for cascaded stages in compact tuner designs. |
| Ciss | 4.3 pF typ. - Low input capacitance minimizes loading on preceding stage and improves impedance matching. |
| Crss | 0.03 pF typ. - Ultra-low reverse transfer capacitance ensures stability and prevents oscillation in tuned amplifiers. |
| |yfs| | 19.5 mS typ. - High forward transconductance supports strong signal amplification at VHF frequencies. |
| CM | 92 dBµ @ 200 MHz - Excellent cross-modulation suppression critical for multi-channel VHF reception fidelity. |
Pinout & Package
Package: 4-pin mini mold (surface-mount compatible embossed tape format). Dimensions: 2.9 ±0.2 mm × 1.5 +0.2/–0.1 mm × 0.85 mm height, with 0.6 mm lead pitch.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source | Common reference node for both gates and drain; tied to ground or RF choke in tuner amplifier layouts. |
| 2 | Drain | RF output node; connects to tuned collector load or interstage coupling network at VHF. |
| 3 | Gate 2 | RF input gate; biased at +3–+4 V for optimal gain/noise trade-off and isolation from input signal path. |
| 4 | Gate 1 | Signal input gate; receives RF signal directly from antenna or preselector; controls channel conduction. |
Key Features
| Feature | Design Value |
|---|---|
| Dual-gate architecture | Independent G1 (signal input) and G2 (bias/control) enable simultaneous optimization of noise, gain, and linearity in VHF amplifiers. |
| Low Crss (0.03 pF) | Minimizes feedback from drain to gate, eliminating need for neutralization in most tuner applications. |
| Enhancement-mode operation | Requires only positive gate bias-simplifies bias network design and eliminates negative supply requirements. |
| Embossed taping | Supports automated SMT placement in high-volume tuner manufacturing without manual handling. |
Applications
| FM Tuner Front-End | VHF TV Tuner RF Amplifier |
|---|---|
Use Scenario: Amplifying weak FM broadcast signals (87.5–108 MHz) after bandpass filtering and before mixer stage. IC Role / Device Role / Timing Role: Dual-gate MOSFET RF amplifier providing first-stage gain with minimal added noise. Use Value: 1.2 dB NF1 and 23 dB GPS ensure high signal-to-noise ratio and sufficient conversion gain for analog FM demodulation. | Use Scenario: Boosting VHF TV channel signals (47–230 MHz) in terrestrial broadcast receivers prior to frequency conversion. IC Role / Device Role / Timing Role: Low-distortion RF amplifier with high CM (92 dBµ) to reject adjacent-channel interference. Use Value: Dual-gate isolation and low Crss prevent self-oscillation and maintain image rejection in wideband VHF amplification. |
| Portable Radio Receiver | Legacy Analog CATV Drop Amplifier |
Use Scenario: Compact battery-powered AM/FM radios requiring low-power, high-sensitivity RF amplification. IC Role / Device Role / Timing Role: Single-device RF gain block operating at 6 V supply with <200 mW dissipation. Use Value: 10 mA ID rating and 200 mW PD allow efficient operation from single-cell alkaline or NiMH sources. | Use Scenario: Signal boosting at subscriber drop points in analog cable TV distribution networks (54–216 MHz). IC Role / Device Role / Timing Role: Stable, low-noise gain stage compensating coaxial line loss without introducing distortion. Use Value: 92 dBµ cross-modulation performance maintains composite triple beat (CTB) and carrier-to-noise (C/N) integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar RF amplifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 3SK192-T2-A | Lower GPS (19 dB @ 200 MHz), higher NF1 (1.5 dB), same 4-pin mini mold package. | Suitable for cost-sensitive FM-only tuners where 4 dB gain margin is acceptable. | Select when lower gain and slightly higher noise are tolerable for simplified biasing and reduced layout sensitivity. |
| NE55171 | Single-gate MOSFET, higher ID rating (30 mA), no dual-gate isolation; different pinout (TO-92). | Used in non-critical RF preamps where cross-modulation suppression is not required. | Choose only for non-tuner applications lacking stringent IM suppression needs; not a drop-in replacement. |
Compared with 3SK222-T2-A, the 3SK192-T2-A trades 4 dB gain and 0.3 dB noise for cost reduction, while NE55171 lacks dual-gate architecture entirely-making it unsuitable for high-fidelity VHF tuner use where CM and Crss matter.
Availability
3SK222-T2-A is available at Aetrix Electronics and suitable for FM tuner design, VHF TV receiver development, and legacy analog CATV equipment repair requiring stable component supply and long-lifecycle support.
Supply support for 3SK222-T2-A includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly NEC Electronics) is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, and RF components for consumer, industrial, and automotive systems.
The 3SK222-T2-A belongs to NEC's legacy RF transistor product line, engineered specifically for high-fidelity, low-noise VHF amplification in broadcast tuner applications with emphasis on cross-modulation immunity and automatic assembly compatibility.
FAQ
What is the maximum drain-source voltage rating for the 3SK222-T2-A?
The 3SK222-T2-A has an absolute maximum drain-to-source voltage (VDSX) rating of 18 V at TA = 25 °C. This rating defines the upper limit for DC biasing in RF amplifier circuits. Exceeding this voltage risks irreversible breakdown. The device is typically operated at 6 V in standard FM/VHF tuner applications to balance gain, noise, and reliability. Always observe derating curves for elevated ambient temperatures per the original NEC datasheet P10574EJ2V0DS00.
Does the 3SK222-T2-A require negative gate bias?
No, the 3SK222-T2-A is an enhancement-mode N-channel MOSFET and does not require negative gate bias. Both Gate 1 and Gate 2 operate with positive voltage relative to Source (VG1S(off) and VG2S(off) ≤ +1.0 V). Standard biasing uses +3 V to +4 V on Gate 2 and +0.75 V on Gate 1 at ID = 10 mA. This simplifies power supply design and eliminates need for charge pumps or split supplies in tuner applications.
What is the significance of the 92 dBµ cross-modulation (CM) specification for the 3SK222-T2-A?
The 92 dBµ cross-modulation value measured at 200 MHz indicates exceptional linearity and intermodulation suppression-critical when multiple VHF signals coexist in tuner front-ends. For the 3SK222-T2-A, this performance stems from dual-gate isolation and low Crss (0.03 pF), enabling clean reception of weak stations adjacent to strong interferers. It directly supports compliance with FCC spectral mask requirements in analog broadcast receivers.
Can the 3SK222-T2-A be used in 5G or Wi-Fi applications?
No, the 3SK222-T2-A is not suitable for 5G or Wi-Fi applications. Its electrical characteristics-including 23 dB GPS and 1.2 dB NF1-are specified only up to 200 MHz, and its package parasitics and Crss/Ciss values are optimized for VHF (47–230 MHz), not GHz bands. Modern 5G/Wi-Fi amplifiers require GaAs or RF CMOS devices with bandwidths exceeding 2.4 GHz and integrated matching. The 3SK222-T2-A remains appropriate only for legacy VHF broadcast systems.
Is the 3SK222-T2-A RoHS compliant?
The 3SK222-T2-A was originally manufactured prior to RoHS enforcement and is classified as a legacy component. While Renesas does not issue formal RoHS declarations for this discontinued part, Aetrix Electronics provides full material content documentation upon request and confirms that current stock meets JIS C 0950:2008 requirements for cadmium, lead, mercury, hexavalent chromium, PBB, and PBDE. No exemptions apply.
3SK222-T2-A Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- *
- Package/Case:
- -
- Packaging:
- Bulk
- Product Status:
- Active
- FET Type:
- -
- Technology:
- -
- Drain to Source Voltage (Vdss):
- -
- Current - Continuous Drain (Id) @ 25°C:
- -
- Drive Voltage (Max Rds On, Min Rds On):
- -
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- -
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- -
- Supplier Device Package:
- -
3SK222-T2-A FAQ
1.How can I place an order for 3SK222-T2-A through Aetrix?
Please submit a Request for Quotation (RFQ) for 3SK222-T2-A on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 3SK222-T2-A reliable?
The price and inventory of 3SK222-T2-A are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 3SK222-T2-A is usually 5 days.
3.What payment methods are accepted for 3SK222-T2-A?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 3SK222-T2-A transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 3SK222-T2-A?
3SK222-T2-A orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 3SK222-T2-A order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 3SK222-T2-A?
For technical support, including 3SK222-T2-A datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 3SK222-T2-A requirements.
6.How does Aetrix verify that 3SK222-T2-A is sourced from the original manufacturer or authorized distributors?
All 3SK222-T2-A products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 3SK222-T2-A meets industry standards.
7.What is the process for return or replacement of 3SK222-T2-A?
All 3SK222-T2-A units undergo pre-shipment inspection (PSI). If there is an issue with 3SK222-T2-A, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 3SK222-T2-A part is unused and in its original packaging.
Return procedure for 3SK222-T2-A:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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