Renesas 3SK298ZP-TL-E

Overview

3SK298ZP-TL-E from Renesas Electronics is a silicon N-channel dual-gate MOSFET designed for UHF/VHF RF amplification in low-noise receiver front-ends. It delivers 1.0 dB typical noise figure at 200 MHz, 25 dB power gain at 200 MHz, and operates with 6 V drain-to-source voltage and 10 mA drain current under standard test conditions.

For engineers reviewing the 3SK298ZP-TL-E datasheet, 3SK298ZP-TL-E pinout, 3SK298ZP-TL-E application, or 3SK298ZP-TL-E equivalent, key selection criteria include its dual-gate architecture for gain control and isolation, low Crss (0.023 pF typ.), and CMPAK-4 surface-mount package optimized for high-frequency matching networks.

Technical Context

This dual-gate MOSFET uses independent gate terminals (G1 and G2) to separate input signal control (G1) from bias and gain stabilization (G2), enabling stable transconductance and reduced feedback capacitance. Its low Crss (0.023 pF typ.) and Ciss (2.9 pF typ.) support broadband impedance matching up to 1 GHz.

The device operates in enhancement mode with VG1S(off) ≤ +1.0 V and VG2S(off) ≤ +1.0 V, allowing low-voltage biasing while maintaining 12 V VDS(max) and ±8 V gate-source rating. Thermal derating follows a 100 mW channel power dissipation limit at 25°C ambient, decreasing linearly to zero at 150°C channel temperature.

Key Specifications

Pinout & Package

3SK298ZP-TL-E is housed in the Renesas PTSP0004ZA-A package (JEITA SC-82A / industry name CMPAK–4), a 4-pin surface-mount plastic package with 0.65 mm pitch, 2.0 × 1.25 mm footprint, and 0.9 mm height. Marking reads "ZP–".

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-gate MOSFET amplifier applications.

Compared with NE680M03 and BF998, the 3SK298ZP-TL-E offers the lowest noise figure in SMT form factor and best PG/NF balance at 200 MHz, making it preferred for space-constrained, high-sensitivity UHF/VHF receivers requiring production-ready surface-mount integration.

Availability

3SK298ZP-TL-E is available at Aetrix Electronics and suitable for UHF/VHF RF amplifiers, broadcast tuner front-ends, and two-way radio receiver LNAs requiring stable component supply and long-term obsolescence management.

Supply support for 3SK298ZP-TL-E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation is a Japanese semiconductor manufacturer specializing in microcontrollers, analog, power, and RF devices for industrial, automotive, and consumer applications.

The 3SK298ZP-TL-E belongs to Renesas' legacy RF transistor product line, engineered specifically for low-noise, high-gain amplification in UHF/VHF communication and broadcast equipment.

FAQ

What is the maximum drain-to-source voltage rating for the 3SK298ZP-TL-E?

The 3SK298ZP-TL-E has an absolute maximum drain-to-source voltage (VDS) rating of 12 V at Ta = 25°C. Operation above this voltage risks permanent breakdown of the channel. Designers must ensure transient spikes and DC biasing remain within this limit, especially in RF amplifier configurations where voltage doubling can occur at resonant nodes. The 3SK298ZP-TL-E datasheet specifies this value on page 2 under Absolute Maximum Ratings.

Does the 3SK298ZP-TL-E require external neutralization for stability at 900 MHz?

No, the 3SK298ZP-TL-E does not require external neutralization at 900 MHz due to its extremely low reverse transfer capacitance (Crss = 0.023 pF typ.). Measured S-parameters show unconditional stability (|Δ| < 1 and Rollett K > 1) across 50–1000 MHz when biased at VDS = 6 V, VG2S = 3 V, and ID = 10 mA. This eliminates the need for neutralizing capacitors or inductive cancellation networks in most practical UHF amplifier layouts using the 3SK298ZP-TL-E.

What is the recommended gate bias configuration for optimal noise figure in the 3SK298ZP-TL-E?

For optimal noise figure, the 3SK298ZP-TL-E should be biased with VG2S = 3 V and ID ≈ 10 mA at VDS = 6 V - the condition under which its 1.0 dB typical NF at 200 MHz is specified. Gate 1 (RF input) must be AC-coupled and DC-blocked, while Gate 2 is supplied via a high-impedance resistive divider or active current source to maintain stable transconductance. Deviations from this bias point increase NF by up to 0.8 dB, as shown in the Noise Figure vs. Drain Current curve on page 4 of the 3SK298ZP-TL-E datasheet.

Is the 3SK298ZP-TL-E RoHS compliant?

Yes, the 3SK298ZP-TL-E is RoHS compliant per EU Directive 2011/65/EU. Renesas Electronics confirms compliance in its environmental documentation and product change notices. The device contains no lead, mercury, cadmium, hexavalent chromium, PBB, or PBDE above threshold limits. Compliance applies to the entire PTSP0004ZA-A package, including mold compound, leadframe, and termination plating used in the 3SK298ZP-TL-E manufacturing process.

Can the 3SK298ZP-TL-E be used in Class A amplifier configurations?

Yes, the 3SK298ZP-TL-E is suitable for Class A RF amplifier operation, with its 100 mW channel power dissipation limit supporting continuous conduction at ID = 10 mA and VDS = 6 V (60 mW DC dissipation). Thermal analysis shows junction temperature remains within 150°C under standard PCB copper pour conditions. However, designers must verify layout thermal resistance and avoid exceeding 100 mW total channel dissipation - a constraint explicitly defined in the 3SK298ZP-TL-E Absolute Maximum Ratings table.