Renesas 4AK15

Overview

4AK15 from Hitachi is a silicon N-channel power MOSFET array comprising four identical high-speed switching devices in a single SP-10 surface-mount package. It features R_DS(on) ≤ 0.07 Ω at V_GS = 10 V and I_D = 8 A, ±60 V V_DSS, and supports 4 V gate drive - enabling direct interface with low-voltage logic in motor, solenoid, and lamp driver circuits.

For engineers reviewing the 4AK15 datasheet, 4AK15 pinout, 4AK15 application, or 4AK15 equivalent, key selection criteria include its quad-drain configuration, low gate charge (Q_g ≈ 16 nC), fast switching (t_d(off) = 180 ns), integrated body diode with t_rr = 110 ns, and thermal derating behavior across 1–4 device operation modes.

Technical Context

The 4AK15 integrates four independent N-channel enhancement-mode MOSFETs sharing common source terminals (pins 1 and 10) and isolated drain/gate connections. Each die operates up to 8 A DC with P_ch = 4 W (ambient) or 28 W (case), and exhibits matched transfer characteristics (V_GS(off) = 1.0–2.0 V) and capacitance profiles (C_iss = 860 pF, C_oss = 450 pF).

Its SP-10 package enables high-density mounting with 10-pin dual-row layout and 2.9 g mass. The device is optimized for synchronous or parallel switching in multi-load systems where gate drive simplicity, thermal symmetry, and layout compactness are critical - such as H-bridge motor drivers and multi-channel LED/solenoid arrays.

Key Specifications

Pinout & Package

Package: SP-10 - 10-pin surface-mount, dual-row, 26.5 mm × 10.5 mm footprint, 2.9 g mass, designed for high-power density PCB layouts with exposed thermal pad (source-connected).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar quad N-channel power MOSFET array applications.

Compared with Si4946DY and IRF7341, the 4AK15 provides true quad integration in one SP-10 package with 60 V rating and matched thermal behavior - making it uniquely suited for space-constrained 48 V industrial drivers where channel synchronization and thermal uniformity are critical.

Availability

4AK15 is available at Aetrix Electronics and suitable for motor driver, solenoid driver, and lamp driver applications requiring stable component supply, long-lifecycle support, and consistent parametric performance across production batches.

Supply support for 4AK15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hitachi Ltd. (now Renesas Electronics Corporation following merger) is a Japanese semiconductor pioneer known for high-reliability power devices and industrial-grade analog ICs.

The 4AK15 belongs to Hitachi's legacy SP-10 power MOSFET array family, engineered specifically for compact, multi-load switching in factory automation, building controls, and electromechanical actuation systems.

FAQ

What is the maximum continuous drain current per channel for the 4AK15?

The 4AK15 supports 8 A continuous drain current per channel at T_c = 25°C. Derating applies above 25°C case temperature - e.g., ~4 A per channel at T_c = 100°C. This rating assumes proper PCB copper area and thermal vias under the SP-10 package. The 4AK15 datasheet specifies P_ch = 28 W at T_c = 25°C for single-device operation, confirming the 8 A rating under ideal heatsinking conditions.

Can the 4AK15 be used with 3.3 V microcontroller GPIOs without a gate driver?

Yes - the 4AK15 is explicitly rated for 4 V gate drive and has V_GS(th) = 1.0–2.0 V, ensuring full enhancement with 3.3 V logic. At V_GS = 4 V, R_DS(on) ≤ 0.095 Ω guarantees low conduction loss. However, rise/fall times increase versus 10 V drive, so PWM frequency should be limited to ≤200 kHz for optimal efficiency. The 4AK15 thus enables direct MCU interface in cost-sensitive, low-to-mid-frequency switching applications.

How are the four MOSFETs configured internally in the 4AK15?

The 4AK15 contains four fully independent N-channel MOSFETs with isolated drains (pins 3,5,7,9) and gates (pins 2,4,6,8), while sources (pins 1 and 10) are internally bonded together and electrically common. There is no internal connection between drains or gates - each channel operates autonomously. This configuration allows flexible use as four separate switches or paralleled for higher current, as confirmed in the "4 Device Operation" derating curves on page 4 of the 4AK15 datasheet.

Does the 4AK15 include an integrated body diode, and what are its characteristics?

Yes - each of the four MOSFETs in the 4AK15 includes a monolithic body diode with forward voltage V_DF = 1.05 V at I_F = 8 A and reverse recovery time t_rr = 110 ns at dI_F/dt = 50 A/µs. These parameters are measured with V_GS = 0, confirming diode operation independent of gate bias. The body diode enables freewheeling in inductive loads and simplifies circuit design by eliminating discrete catch diodes in solenoid and motor driver applications using the 4AK15.

What is the thermal resistance (R_θJC) of the 4AK15 SP-10 package?

The 4AK15 datasheet does not specify R_θJC directly, but thermal performance is defined via maximum channel dissipation curves. At T_c = 25°C, P_ch = 28 W per device (page 4), implying R_θJC ≈ (T_ch − T_c) / P_ch = (150 − 25) / 28 ≈ 4.46 °C/W. This value aligns with typical SP-10 packages and confirms suitability for forced-air or moderate heatsink cooling. For multi-device operation, derating to 4 W ambient (page 4, "1 Device Operation") reflects R_θJA ≈ 31.25 °C/W under standard JEDEC test conditions.