Renesas 4AK18

Overview

4AK18 from Hitachi is a silicon N-channel power MOS FET array in SP-10 package, integrating four identical discrete MOSFETs. It delivers R_DS(on) ≤ 0.38 Ω at V_GS = 10 V, 1 A; supports 4 V gate drive; features 60 V V_DSS, 2.5 A continuous drain current per device, and high-speed switching (t_d(off) = 80 ns). It is used in motor driver, solenoid driver, and lamp driver circuits requiring compact high-density mounting.

For engineers reviewing the 4AK18 datasheet, 4AK18 pinout, 4AK18 application, or 4AK18 equivalent, key selection criteria include verified 4 V logic-level gate compatibility, confirmed 4-device thermal derating curves, validated body diode reverse recovery time (t_rr = 70 ns), and SP-10 package mechanical dimensions for PCB layout planning.

Technical Context

The 4AK18 implements four independent N-channel enhancement-mode MOSFETs in a single SP-10 surface-mount package with shared source terminals (pins 1 and 10) and isolated drain/gate connections. Each device operates with V_GSS = ±20 V, exhibits low input capacitance (C_iss = 240 pF), and supports pulse operation up to 10 A peak drain current under 1% duty cycle.

Its channel temperature rating of 150°C and specified R_DS(on) variation over –40°C to 120°C enable stable performance in thermally constrained motor control modules. The integrated body diode has V_DF = 1.0 V at I_F = 2 A and t_rr = 70 ns under dI_F/dt = 50 A/µs, supporting freewheeling in inductive load switching.

Key Specifications

Pinout & Package

Package: SP-10 - 10-pin surface-mount package (26.5 mm × 10.5 mm × 2.5 mm), mass 2.9 g, JEDEC-unregistered but documented by Hitachi with defined lead pitch (2.54 mm) and terminal geometry.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOS FET array applications.

Compared with Si4942DY and IRF7319, the 4AK18 offers unique quad-N-channel integration at 60 V rating with documented t_rr and thermal derating curves-critical for multi-load 48 V industrial drivers where board space and thermal predictability outweigh the need for ultra-low R_DS(on).

Availability

4AK18 is available at Aetrix Electronics and suitable for motor driver, solenoid driver, and lamp driver applications requiring stable component supply, long-term industrial lifecycle support, and consistent SP-10 package availability.

Supply support for 4AK18 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Hitachi Ltd. (now Renesas Electronics Corporation) is a Japanese semiconductor pioneer known for high-reliability power devices and industrial-grade analog ICs.

The 4AK18 belongs to Hitachi's legacy SP-10 power MOS FET array family, designed specifically for compact, thermally efficient multi-load switching in factory automation, HVAC, and transportation control systems.

FAQ

What is the maximum continuous drain current per channel for the 4AK18?

The 4AK18 supports 2.5 A continuous drain current per channel at T_c = 25°C. This rating decreases with rising case temperature per the published derating curve-e.g., ~1.5 A per device at T_c = 75°C for 4-device operation. The 4AK18 datasheet specifies that this limit applies under conditions where channel dissipation is evenly distributed across all four dies.

Does the 4AK18 have an integrated body diode, and what are its key parameters?

Yes, the 4AK18 includes an integrated body diode for each MOSFET. Its forward voltage is V_DF = 1.0 V at I_F = 2 A and V_GS = 0, and its reverse recovery time is t_rr = 70 ns under dI_F/dt = 50 A/µs. These values are measured per device and are critical for designing snubberless inductive load switching circuits using the 4AK18.

Can the 4AK18 be driven directly from a 3.3 V microcontroller GPIO?

The 4AK18 has a gate threshold voltage V_GS(off) of 1.0–2.0 V and guarantees R_DS(on) ≤ 0.53 Ω at V_GS = 4 V, making it compatible with 3.3 V logic when marginally sufficient gate drive is acceptable. However, full performance (R_DS(on) ≤ 0.38 Ω) requires 10 V gate drive. For robust 3.3 V operation, verify actual V_GS at the 4AK18 gate under load using appropriate series resistance and PCB layout.

What is the thermal resistance junction-to-case (R_θJC) for the 4AK18?

The 4AK18 datasheet does not explicitly list R_θJC as a standalone parameter. Instead, thermal performance is defined via maximum channel dissipation curves: 28 W per device at T_c = 25°C, derating linearly to 0 W at T_c = 150°C. Engineers must use these curves-not a fixed R_θJC value-to calculate allowable power dissipation for a given case temperature in their 4AK18 design.

Is the 4AK18 pinout compatible with other SP-10 packaged MOSFET arrays?

The 4AK18 uses a proprietary SP-10 pinout (sources on pins 1/10, gates on even pins 2/4/6/8, drains on odd pins 3/5/7/9) defined by Hitachi. No cross-manufacturer pin compatibility is documented. Substituting other SP-10 devices requires verification of identical terminal mapping, as alternate SP-10 parts may assign pins differently-even if mechanical footprint matches. Always confirm pin function against the specific 4AK18 datasheet before layout reuse.