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Infineon Technologies 94-3449
- Part No.:
- 94-3449
- Manufacturer:
- Infineon Technologies
- Category:
- FET, MOSFET Arrays
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
94-3449.pdf
- Description:
- MOSFET 2P-CH 55V 3.4A 8SO
- Quantity:
- Payment:
- Shipping:
Inventory:4,243
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Product details
Overview
IRF7342PbF from Infineon Technologies is a dual P-channel enhancement-mode MOSFET in SO-8 package, rated for -55 V VDS, 0.105 Ω RDS(on) at -10 V VGS, and -3.4 A continuous drain current at 25°C. It integrates two matched HEXFET devices on a single lead-frame-modified SO-8 die, enabling compact high-efficiency synchronous rectification and load switching in DC-DC converters and power management circuits.
For engineers reviewing the IRF7342PbF datasheet, IRF7342PbF pinout, IRF7342PbF application, or IRF7342PbF equivalent, key selection criteria include verified dual P-channel topology, thermal performance under PCB-mount conditions (RθJA = 62.5°C/W), avalanche energy rating (114 mJ), gate charge profile (Qg = 26–38 nC), and JEDEC MSL1 moisture sensitivity level.
Technical Context
This dual P-channel MOSFET implements Generation V HEXFET architecture with optimized trench cell design to achieve ultra-low on-resistance per unit area while maintaining robust dv/dt immunity (5.0 V/ns) and fast switching (tr = 10–15 ns, tf = 22–32 ns). Its monolithic dual-die configuration shares common source terminals and independent gate/drain connections, supporting complementary half-bridge or dual independent low-side switching topologies.
The device features integrated body diodes with characterized reverse recovery (trr = 54–80 ns, Qrr = 85–130 nC) and forward voltage (VSD = -1.2 V at -2.0 A), enabling reliable operation in synchronous buck converters and OR-ing applications without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -55 V - Maximum blocking voltage for high-side or floating-switch configurations in ≤48 V systems |
| RDS(on) | 0.095–0.105 Ω @ -10 V VGS - Enables <1 W conduction loss at -3.4 A, critical for thermally constrained PCB layouts |
| ID (25°C) | -3.4 A continuous - Sustains full-load current in dual-channel 3.3/5 V rail switches without derating |
| PD (25°C) | 2.0 W - Supports >0.8 W dissipation on standard FR-4 with 1"² copper, eliminating need for heatsinks |
| Qg | 26–38 nC - Determines gate drive power and switching loss in PWM frequencies up to 1 MHz |
| EAS | 114 mJ - Withstands single-pulse inductive energy events without failure in motor or solenoid drivers |
| tr/tf | 10–15 ns / 22–32 ns - Minimizes transition losses in high-frequency DC-DC stages (≥500 kHz) |
Pinout & Package
SO-8 package with exposed thermal pad (non-electrical), optimized for vapor-phase and IR reflow. Lead frame modification enhances thermal resistance and enables dual-die integration within standard footprint.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3 | Source 1 (S1) | Common source terminal for first MOSFET channel; tied internally to pin 4 in typical layout |
| 4 | Drain 1 (D1) | Output node for first channel; electrically isolated from D2 (pin 5) |
| 5 | Drain 2 (D2) | Output node for second channel; independent of D1 for dual-switching flexibility |
| 6, 7, 8 | Source 2 (S2) | Common source terminal for second MOSFET channel; tied internally to pin 5 in some variants |
| 1, 8 | Gate 1 (G1) | Control input for first channel; requires -10 V for full enhancement |
| 2, 3 | Gate 2 (G2) | Control input for second channel; fully independent gate drive capability |
Key Features
| Feature | Design Value |
|---|---|
| Dual P-channel integration | Two matched MOSFETs in one SO-8 package reduce board area by >40% vs discrete solutions |
| Generation V HEXFET process | 0.095 Ω RDS(on) at -10 V enables ≥92% efficiency in 12 V input buck converters at 3 A |
| Enhanced thermal lead frame | 62.5°C/W RθJA allows 2.0 W dissipation on standard PCB-no thermal vias required |
| Lead-free and RoHS compliant | Pb-free plating and MSL1 rating support automated assembly without moisture bake-out |
| Dynamic dv/dt immunity | 5.0 V/ns rating prevents false turn-on in noisy high-speed switching environments |
Applications
| DC-DC Synchronous Buck Converter | Hot-Swap OR-ing Circuit |
|---|---|
Use Scenario: 12 V to 3.3 V conversion in network switch power supplies with tight thermal constraints. IC Role / Device Role: Dual P-channel high-side switch replacing N-channel + level shifter; operates as synchronous rectifier and main switch. Use Value: Eliminates external gate driver and reduces BOM count by two components while maintaining <15 mΩ total path resistance. | Use Scenario: Redundant 5 V power rails in industrial PLC backplanes requiring seamless failover. IC Role / Device Role: Low-loss OR-ing element controlling power path direction based on rail voltage priority. Use Value: 0.105 Ω RDS(on) limits voltage drop to <350 mV at 3.4 A, minimizing thermal stress during parallel operation. |
| Load Switch for USB-C PD | Motor Driver Half-Bridge |
Use Scenario: 20 V input protection and controlled ramp-up in USB-C Power Delivery sink designs. IC Role / Device Role: Dual independent load switch managing VBUS and CC line power sequencing. Use Value: Independent gate control (G1/G2) enables staggered turn-on to limit inrush current to <1 A peak. | Use Scenario: 24 V brushed DC motor control in battery-powered tools with bidirectional braking. IC Role / Device Role: High-side switch in H-bridge configuration driving motor phase windings. Use Value: 114 mJ avalanche energy rating absorbs inductive kickback during active freewheeling without snubbers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7957DP-T1-GE3 | RDS(on) = 0.075 Ω @ -4.5 V; lower gate threshold (-1.5 V typ); higher Qg (42 nC) | Better suited for 3.3 V logic-level drive but increases switching loss at 1 MHz | Select when gate drive voltage is limited to ≤-4.5 V and thermal margin is available |
| DMC3025LSD-13 | RDS(on) = 0.032 Ω @ -4.5 V; SO-8 with enhanced thermal pad; higher ID (−6.5 A) | Requires PCB thermal relief redesign due to different pad layout and higher power density | Choose for higher current loads (>4 A) where board space permits revised thermal layout |
Compared with Si7957DP-T1-GE3 and DMC3025LSD-13, the IRF7342PbF offers optimal balance of -10 V gate drive compatibility, proven avalanche ruggedness, and drop-in SO-8 mechanical fit-making it preferred for legacy designs and cost-sensitive industrial power modules.
Availability
IRF7342PbF is available at Aetrix Electronics and suitable for DC-DC converters, hot-swap controllers, and motor driver circuits requiring stable component supply across automotive infotainment, industrial automation, and telecom infrastructure programs.
Supply support for IRF7342PbF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.
The IRF7342PbF belongs to Infineon's HEXFET Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in space-constrained industrial and computing applications.
FAQ
What is the maximum safe operating temperature for IRF7342PbF?
The junction temperature must not exceed +150°C under steady-state or transient conditions. Derating begins at 25°C ambient, with linear reduction of 0.016 W/°C above 25°C. At 70°C ambient, maximum power dissipation drops to 1.3 W. Thermal design must account for PCB copper area and airflow per Figure 11 in the datasheet.
Can IRF7342PbF be used in linear (analog) mode?
No-it is not characterized or guaranteed for linear-mode operation. The Safe Operating Area (SOA) curve is only specified for pulsed conditions (Figure 11), and no DC SOA data is provided. Continuous linear use risks thermal runaway due to positive temperature coefficient of RDS(on) and lack of SOA validation.
Is the body diode suitable for reverse recovery in synchronous rectification?
Yes-the body diode has measured trr = 54–80 ns and Qrr = 85–130 nC at 100 A/µs di/dt, making it viable for synchronous rectification in ≤500 kHz buck converters. However, zero-voltage switching must be ensured to avoid cross-conduction losses during dead-time transitions.
Does IRF7342PbF require gate resistors for EMI suppression?
Yes-external gate resistors (typically 5–22 Ω) are recommended to damp ringing caused by parasitic inductance in gate loops. The device's low Qgd/Qgs ratio (≈2.8) improves Miller immunity, but uncontrolled edge rates can still excite PCB resonances above 100 MHz, violating CISPR-32 Class B limits.
94-3449 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tube
- Product Status:
- Obsolete
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 55V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A
- Rds On (Max) @ Id, Vgs:
- 105mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690pF @ 25V
- Power - Max:
- 2W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SO
94-3449 FAQ
1.How can I place an order for 94-3449 through Aetrix?
Please submit a Request for Quotation (RFQ) for 94-3449 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 94-3449 reliable?
The price and inventory of 94-3449 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 94-3449 is usually 5 days.
3.What payment methods are accepted for 94-3449?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 94-3449 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 94-3449?
94-3449 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 94-3449 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 94-3449?
For technical support, including 94-3449 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 94-3449 requirements.
6.How does Aetrix verify that 94-3449 is sourced from the original manufacturer or authorized distributors?
All 94-3449 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 94-3449 meets industry standards.
7.What is the process for return or replacement of 94-3449?
All 94-3449 units undergo pre-shipment inspection (PSI). If there is an issue with 94-3449, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 94-3449 part is unused and in its original packaging.
Return procedure for 94-3449:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
94-3449 Tags
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SSM6N7002KFU,LF
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2N7002DW-7-F
Diodes Incorporated
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SSM6L56FE,LM
Toshiba Semiconductor and Storage
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SSM6N37FU,LF
Toshiba Semiconductor and Storage
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2N7002DWH6327XTSA1
Infineon Technologies
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2N7002BKS,115
Nexperia USA Inc.
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DMG1016UDW-7
Diodes Incorporated
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UM6K33NTN
Rohm Semiconductor
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DMG6602SVT-7
Diodes Incorporated
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EM6K34T2CR
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UM6K34NTCN
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DMG6601LVT-7
Diodes Incorporated
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