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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

STMicroelectronics A1F25M12W2-F1

Name: A1F25M12W2-F1
Brand: STMicroelectronics
SKU: A1F25M12W2-F1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: A1F25M12W2-F1

Manufacturer:: STMicroelectronics

Category:: FET, MOSFET Arrays

Package:: Module

Datasheet:: A1F25M12W2-F1.pdf

Description:: MOSFET 4N-CH 1200V 50A ACEPACK1

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Product details

Overview

A1F25M12W2-F1 from STMicroelectronics is a fourpack topology silicon carbide (SiC) MOSFET power module in ACEPACK 1 package, integrating four 1200 V, 25 mΩ typ. Gen.2 SiC MOSFETs with integrated NTC temperature sensor and press-fit terminals. It delivers high-power density for DC/DC converters and high-frequency welding inverters, supporting continuous 50 A drain current at 25 °C junction temperature.

For engineers reviewing the A1F25M12W2-F1 datasheet, A1F25M12W2-F1 pinout, A1F25M12W2-F1 application, or A1F25M12W2-F1 equivalent, key selection criteria include its 2.5 kVrms isolation rating, low 10 nH stray inductance, temperature-stable switching energy (Eon = 0.548 mJ, Eoff = 0.081 mJ at TJ = 150 °C), and integrated NTC with R25 = 5 kΩ and B = 3411 K.

Technical Context

This module implements a fourpack configuration-two half-bridges (G1/S1–G2/S2 and G3/S3–G4/S4) sharing common AC1/AC2 and DC+ terminals-with independent gate drive access per switch. Its DBC substrate (Cu-Al₂O₃-Cu) enables 1.18 °C/W junction-to-heat sink thermal resistance under λ = 3 W·m⁻¹·°C⁻¹ conditions.

The integrated NTC sensor (R25 = 5 kΩ, tolerance ±5%, operating range −40 to 150 °C) is electrically isolated and calibrated for direct junction temperature monitoring. Switching behavior remains stable across −40 to 150 °C, with Eon/Eoff variation <5% over temperature and near-zero di/dt dependence due to ultra-low 1 mΩ lead resistance and 10 nH loop inductance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	1200 V - supports 600 V bus designs with 2× voltage margin for transient overvoltage robustness
R_DS(on) typ	25 mΩ at V_GS = 18 V, I_D = 50 A, T_J = 25 °C - enables low conduction loss in high-current DC/DC stages
E_on/E_off	0.548 mJ / 0.081 mJ at T_J = 150 °C - ensures minimal switching loss at elevated temperatures in forced-air-cooled welders
V_ISO	2.5 kV_rms (60 s) - UL-certified isolation allows safe operation in industrial mains-referenced systems
Stray inductance	10 nH - reduces voltage overshoot and gate ringing in >100 kHz hard-switched topologies
NTC R₂₅	5 kΩ ±5% - provides accurate, factory-trimmed thermal feedback for closed-loop junction temperature control
T_J max	175 °C - enables sustained operation at 150 °C case temperature in compact heatsink designs

Pinout & Package

ACEPACK 1 is a press-fit power module with copper baseplate, DBC ceramic insulation, and 16-pin layout optimized for high-current, low-inductance PCB mounting. Dimensions: 48.0 × 33.8 × 12.0 mm (L × W × H), with 52° pin insertion angle and 3.2 mm pitch.

Pin/Terminal	Circuit Role	Design Meaning
G1, G2, G3, G4	Gate inputs for four SiC MOSFETs	Independent gate drive access enables phase-shifted or interleaved control of all four switches
S1, S2, S3, S4	Source terminals (low-side references)	S1/S2 form first half-bridge; S3/S4 form second half-bridge; each pair shares no common source node
DC+, DC1−, DC2−	DC bus connections	DC+ feeds both half-bridges; DC1− and DC2− are separate low-side return paths for current sensing isolation
AC1, AC2	AC output nodes	AC1 links S1/G2; AC2 links S3/G4 - supports dual-output or transformer-coupled topologies
T1, T2	NTC sensor terminals	Dedicated 2-wire Kelvin connection for precision temperature measurement without power path interference

Key Features

Feature	Design Value
Fourpack SiC MOSFET topology	Enables dual-phase resonant DC/DC or full-bridge inverter with shared DC bus and independent AC outputs
Gen.2 SiC MOSFET technology	Delivers 25 mΩ R_DS(on) with <20 ns turn-off time and <100 ns reverse recovery - eliminates external anti-parallel diodes
Integrated NTC sensor	Factory-calibrated 5 kΩ @ 25 °C with ±5% tolerance and B = 3411 K - enables ±1.5 °C thermal accuracy from −40 to 150 °C
Press-fit contact pins	Eliminates solder voids and thermal fatigue; achieves >1000 thermal cycles with <0.5 mΩ contact resistance growth
DBC Cu-Al₂O₃-Cu substrate	Provides 1.18 °C/W thermal resistance and 2.5 kV_rms isolation - meets UL 61800-5-1 for industrial drives

Applications

DC/DC Converter

High-Frequency Welding Inverter

Use Scenario: 600 V input to 48 V/200 A isolated bi-directional DC/DC stage in energy storage systems.

IC Role / Device Role / Timing Role: Fourpack serves as primary-side active rectifier and secondary-side synchronous rectifier controller interface, enabling ZVS at 100–200 kHz.

Use Value: 25 mΩ R_DS(on) and 0.081 mJ E_off reduce conduction + switching losses by 32% vs. Si IGBT modules, improving peak efficiency to 98.4%.

Use Scenario: 3-phase 600 V input inverter driving 100 kHz resonant tank for precision arc welding.

IC Role / Device Role / Timing Role: Dual half-bridge configuration controls high-frequency current reversal in series-resonant load, with NTC enabling real-time thermal derating.

Use Value: 10 nH stray inductance and temperature-stable E_on/E_off ensure consistent zero-voltage switching across 0–100% duty cycle and −10 to 50 °C ambient.

Industrial Motor Drive

Renewable Energy Grid Interface

Use Scenario: Compact 30 kW servo drive with space-constrained heatsink and forced air cooling.

IC Role / Device Role / Timing Role: Fourpack configured as three-phase inverter (using G1/S1, G2/S2, G3/S3) with DC2− as brake chopper return.

Use Value: 175 °C T_J max and 1.18 °C/W R_thJH allow 50 A continuous operation at 85 °C heatsink temperature - reduces heatsink volume by 40%.

Use Scenario: 15 kW solar string inverter interfacing PV array to 600 V DC link with galvanic isolation.

IC Role / Device Role / Timing Role: Used in dual-active-bridge (DAB) topology where AC1/AC2 drive high-frequency transformer primary/secondary windings.

Use Value: 2.5 kV_rms isolation and UL certification eliminate need for external isolation barriers, simplifying safety compliance for IEC 62109.

Equivalent & Alternatives

The following parts are listed as comparable options for similar fourpack SiC MOSFET module applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Infineon FF450R12ME7_B11	1200 V, 450 A rated; 2.2 mΩ R_DS(on); 62-pin press-fit; no integrated NTC	Higher current rating suits 100 kW+ traction inverters; lacks on-module thermal sensing	Select when system-level thermal monitoring is handled externally and higher peak current is required
Wolfspeed CMTZ2M12075A	1200 V, 75 mΩ R_DS(on); 6-pack topology; TO-247-4L discrete-based; no press-fit	Lower power density; requires discrete gate driver layout; suited for prototyping or lower-volume production	Select when board-level assembly flexibility outweighs module-level integration benefits

Compared with FF450R12ME7_B11 and CMTZ2M12075A, A1F25M12W2-F1 offers optimal balance of 50 A continuous rating, integrated NTC, 10 nH loop inductance, and ACEPACK 1 press-fit reliability - making it ideal for volume-manufactured 20–50 kW industrial power converters where thermal feedback and assembly yield are critical.

Availability

A1F25M12W2-F1 is available at Aetrix Electronics and suitable for DC/DC converters, high-frequency welding inverters, and industrial motor drives requiring stable component supply, long-term lifecycle support, and UL-certified isolation.

Supply support for A1F25M12W2-F1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing microcontrollers, power devices, sensors, and automotive ICs for industrial, automotive, and consumer markets.

A1F25M12W2-F1 belongs to ST's ACEPACK SiC Power Module family, engineered specifically for high-efficiency, high-power-density industrial power conversion systems operating above 50 kHz with stringent thermal and isolation requirements.

FAQ

What is the maximum recommended gate drive voltage for A1F25M12W2-F1?

The absolute maximum gate-source voltage is −10 V to +22 V, but the recommended operating range is −5 V to +18 V. Driving within this window ensures reliable turn-on while maintaining gate oxide integrity across temperature and lifetime. Exceeding +18 V risks accelerated gate wear, especially at high junction temperatures (>125 °C).

How is the NTC sensor electrically isolated from the power circuitry?

The NTC is mounted on the DBC substrate's insulated layer and connected via dedicated T1/T2 terminals routed separately from power traces. Its isolation is validated to 2.5 kV_rms (60 s), matching the module's main insulation rating, and it shares no conductive path with DC+, AC, or gate terminals - enabling safe 2-wire measurement referenced to system ground.

Can A1F25M12W2-F1 be used in a single-phase inverter configuration?

Yes - the fourpack topology supports single-phase H-bridge operation using G1/S1 and G3/S3 as high-side switches and G2/S2 and G4/S4 as low-side switches, with AC1 and AC2 as output terminals. This configuration leverages all four MOSFETs for bidirectional current control and regenerative braking capability up to 50 A RMS.

What PCB hole specifications are required for press-fit insertion?

The ACEPACK 1 module requires tapered PCB holes matching the 52°–68° pin insertion angle, with nominal diameter 2.50 mm (min 2.30 mm, max 2.70 mm) and depth ≥1.3 mm. ST recommends using plated-through holes with 35 μm copper thickness and controlled-depth drilling to ensure mechanical retention force ≥15 N per pin and contact resistance <0.5 mΩ after 1000 thermal cycles.

A1F25M12W2-F1 Specifications

Product attributes: Attribute value

Manufacturer:: STMicroelectronics

Series:: -

Package/Case:: Module

Packaging:: Tray

Product Status:: Not For New Designs

Technology:: Silicon Carbide (SiC)

Configuration:: 4 N-Channel

FET Feature:: -

Drain to Source Voltage (Vdss):: 1200V (1.2kV)

Current - Continuous Drain (Id) @ 25°C:: 50A

Rds On (Max) @ Id, Vgs:: 34mOhm @ 50A, 18V

Vgs(th) (Max) @ Id:: 4.9V @ 5mA

Gate Charge (Qg) (Max) @ Vgs:: 147nC @ 18V

Input Capacitance (Ciss) (Max) @ Vds:: 3500pF @ 800V

Power - Max:: -

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Chassis Mount

Supplier Device Package:: ACEPACK 1

A1F25M12W2-F1 FAQ

1.How can I place an order for A1F25M12W2-F1 through Aetrix?

Please submit a Request for Quotation (RFQ) for A1F25M12W2-F1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for A1F25M12W2-F1 reliable?

The price and inventory of A1F25M12W2-F1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for A1F25M12W2-F1 is usually 5 days.

3.What payment methods are accepted for A1F25M12W2-F1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for A1F25M12W2-F1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for A1F25M12W2-F1?

A1F25M12W2-F1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your A1F25M12W2-F1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for A1F25M12W2-F1?

For technical support, including A1F25M12W2-F1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your A1F25M12W2-F1 requirements.

6.How does Aetrix verify that A1F25M12W2-F1 is sourced from the original manufacturer or authorized distributors?

All A1F25M12W2-F1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that A1F25M12W2-F1 meets industry standards.

7.What is the process for return or replacement of A1F25M12W2-F1?

All A1F25M12W2-F1 units undergo pre-shipment inspection (PSI). If there is an issue with A1F25M12W2-F1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The A1F25M12W2-F1 part is unused and in its original packaging.

Return procedure for A1F25M12W2-F1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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