Alpha & Omega Semiconductor Inc. AO3460L
- Part No.:
- AO3460L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 3-SMD, SOT-23-3 Variant
- Datasheet:
-
AO3460L.pdf
- Description:
- MOSFET N-CH 60V 650MA SOT23
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AO3460L from Alpha & Omega Semiconductor is a 60V N-channel enhancement-mode MOSFET in SOT-23 package, rated for 0.65A continuous drain current at VGS = 10V, with RDS(ON) < 1.7Ω at 10V and < 2Ω at 4.5V, and ESD protection. It serves as a low-power load switch in portable battery-powered systems.
For engineers reviewing the AO3460L datasheet, pinout, applications, or equivalent options, key selection criteria include gate-threshold voltage (1–2.5V), body-diode forward voltage (0.8–1V), thermal resistance (RθJA = 125°C/W), and low gate charge (Qg(4.5V) = 0.4–1.5nC) for efficient switching in space-constrained DC-DC converters.
Technical Context
This MOSFET employs advanced trench-gate technology to achieve low RDS(ON) and fast switching with gate drive compatible down to 4.5V. Its 0.8–1V body-diode forward voltage and 7.5nC reverse recovery charge support synchronous rectification in low-current buck converters.
The device operates within −55°C to +150°C junction temperature range, with absolute maximum VDS = 60V and VGS = ±20V. Thermal performance is characterized by RθJA = 125°C/W (on 1in² FR-4, 2oz Cu) and RθJL = 63°C/W, enabling reliable operation in thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60V - Maximum drain-source blocking voltage; defines safe operating range in 24V/48V input rails. |
| ID (continuous) | 0.65A at TA = 25°C - Supports load switching up to ~3W at ambient temperature without heatsinking. |
| RDS(ON) | <1.7Ω at VGS = 10V - Ensures <1.1mW conduction loss at 0.65A; critical for efficiency in always-on circuits. |
| VGS(th) | 1–2.5V - Enables logic-level turn-on with 3.3V microcontrollers; avoids need for gate boosters. |
| Qg(4.5V) | 0.4–1.5nC - Low gate charge reduces drive power and enables >1MHz switching in compact DC-DC stages. |
| VSD | 0.8–1V - Low body-diode forward drop minimizes reverse-recovery losses during freewheeling. |
| RθJA | 125°C/W - Limits power dissipation to ~1.4W at TJ = 150°C on standard FR-4; constrains max continuous ID at elevated ambient. |
Pinout & Package
SOT-23 package: surface-mount, 3-pin, plastic molded case with gull-wing leads; footprint compatible with JEDEC TO-236AB. Thermal pad not present; power dissipation relies on PCB copper area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Current return path for channel conduction | Connected to ground or low-side reference; forms common node with body diode cathode. |
| 2 (Gate) | Control electrode for channel formation | High-impedance input requiring <1.5nC charge; sensitive to ESD but protected per spec. |
| 3 (Drain) | High-side current output terminal | Connected to load or supply rail; withstands 60V transients; carries full switched current. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced at VGS ≥ 4.5V - eliminates level-shifting circuitry when driven by 3.3V or 5V MCUs. |
| ESD protection | HBM rating ≥ 2kV - enables robust handling during board assembly and field service without external TVS. |
| Low gate charge | Qg(4.5V) ≤ 1.5nC - reduces driver IC stress and gate-drive loop EMI in high-frequency SMPS. |
| Trench MOSFET architecture | Optimized cell pitch and oxide thickness - achieves RDS(ON) × Qg figure-of-merit < 3.0Ω·nC for efficiency-critical applications. |
Applications
| Battery-Powered Load Switch | Low-Current DC-DC Converter |
|---|---|
Use Scenario: Enabling/disabling power to Bluetooth LE sensors or IoT peripherals in sleep/wake cycles. IC Role / Device Role / Timing Role: Low-side switch controlling VOUT rail; turned on/off by MCU GPIO with <10µs response. Use Value: RDS(ON) < 2Ω at 4.5V ensures <0.65mW static loss at 0.5A, extending battery life in multi-year deployments. | Use Scenario: Synchronous rectifier in 3.3V-output buck converter powered from single Li-ion cell (2.7–4.2V). IC Role / Device Role / Timing Role: Freewheeling switch replacing Schottky diode; commutated at 500kHz–1MHz. Use Value: VSD = 0.8V and Qrr = 7.5nC reduce conduction and recovery losses versus 0.3A Schottky, improving light-load efficiency by ~3%. |
| USB Port Power Management | Low-Power Inverter Stage |
Use Scenario: Overcurrent-protected VBUS switch in USB 2.0 peripheral hubs or dongles. IC Role / Device Role / Timing Role: High-side switch with integrated current sensing via RDS(ON) monitoring. Use Value: Tight RDS(ON) tolerance (1.4–1.7Ω) enables accurate ±15% current limit detection without sense resistor. | Use Scenario: Half-bridge leg in miniature H-bridge motor driver for vibration motors or piezo actuators. IC Role / Device Role / Timing Role: Low-side switch complementing high-side P-channel or driver IC; duty cycle < 50%. Use Value: Fast tf = 5.5–11ns and low Coss = 6–10pF minimize shoot-through risk and switching loss at 200kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | RDS(ON) = 1.9Ω @ 4.5V; VDS = 30V; SOT-23-3 | Limited to ≤30V systems; higher RDS(ON) increases conduction loss at same current. | Choose for cost-sensitive 3.3V/5V logic-driven switches where 30V rating suffices. |
| SI2302DS-T1-E3 | RDS(ON) = 2.4Ω @ 4.5V; VDS = 20V; SOT-23 | Lower voltage rating restricts use to ≤20V rails; higher on-resistance degrades efficiency above 0.4A. | Prefer for ultra-low-cost consumer electronics with strict BOM budget and 12V or lower inputs. |
Compared with DMN3026LSD-13 and SI2302DS-T1-E3, the AO3460L delivers superior 60V capability and lowest RDS(ON) at 4.5V among SOT-23 N-ch devices, making it optimal for industrial 24V sensors and battery-backed systems requiring margin against voltage transients.
Availability
AO3460L is available at Aetrix Electronics and suitable for battery management, USB power delivery, and low-power DC-DC converter designs requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production lots.
Supply support for AO3460L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AO3460L belongs to AOS's logic-level N-channel MOSFET product line, engineered for space-constrained, low-voltage switching applications where gate drive simplicity and thermal efficiency are prioritized over ultra-high current handling.
FAQ
What is the maximum continuous drain current for AO3460L at 70°C ambient temperature?
The AO3460L supports 0.5A continuous drain current at TA = 70°C, derived from its 1.4W power dissipation rating and RθJA = 125°C/W. This value reflects thermal derating from the 0.65A rating at 25°C ambient and ensures junction temperature remains below 150°C under steady-state conditions. The AO3460L datasheet specifies this limit explicitly in the Absolute Maximum Ratings table.
Does AO3460L have built-in ESD protection, and what level is specified?
Yes, the AO3460L includes on-chip ESD protection rated to ≥2kV per Human Body Model (HBM), as confirmed in the General Description and Electrical Characteristics sections of the official datasheet. This protection allows direct handling and placement without additional external ESD safeguards in typical assembly environments. The AO3460L specification sheet states "ESD protected" unambiguously in both summary and feature lists.
Can AO3460L be driven directly by a 3.3V microcontroller GPIO without a gate driver?
Yes, the AO3460L can be fully enhanced using a 3.3V GPIO because its gate threshold voltage VGS(th) ranges from 1.0V to 2.5V and RDS(ON) remains <2Ω at VGS = 4.5V - well within 3.3V logic swing margins. The AO3460L datasheet confirms operation down to 4.5V gate drive, and typical transfer curves show strong conduction onset below 3V. No external gate driver is required for low-frequency switching.
What is the body diode reverse recovery charge (Qrr) of AO3460L, and why does it matter?
The AO3460L has a body diode reverse recovery charge Qrr of 7.5nC, measured at IF = 0.65A, dI/dt = 100A/µs, and VGS = −9V. This parameter directly impacts switching loss and EMI in synchronous rectifier or half-bridge configurations. Lower Qrr reduces tail current and voltage overshoot during turn-off - a key advantage of the AO3460L over general-purpose MOSFETs in high-frequency DC-DC converters.
Is AO3460L suitable for automotive applications?
No, the AO3460L is not qualified for automotive use. The official datasheet states: "THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED." It lacks AEC-Q101 qualification, extended temperature screening, and automotive-specific reliability testing. For automotive-grade alternatives, consult AOS's AEC-Q101-qualified portfolio - the AO3460L is intended for industrial and consumer equipment only.
AO3460L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 3-SMD, SOT-23-3 Variant
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 650mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 1.7Ohm @ 650mA, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- -
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 27 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1.4W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
AO3460L FAQ
1.How can I place an order for AO3460L through Aetrix?
Please submit a Request for Quotation (RFQ) for AO3460L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AO3460L reliable?
The price and inventory of AO3460L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO3460L is usually 5 days.
3.What payment methods are accepted for AO3460L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO3460L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AO3460L?
AO3460L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AO3460L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AO3460L?
For technical support, including AO3460L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO3460L requirements.
6.How does Aetrix verify that AO3460L is sourced from the original manufacturer or authorized distributors?
All AO3460L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO3460L meets industry standards.
7.What is the process for return or replacement of AO3460L?
All AO3460L units undergo pre-shipment inspection (PSI). If there is an issue with AO3460L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AO3460L part is unused and in its original packaging.
Return procedure for AO3460L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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