Alpha & Omega Semiconductor Inc. AO4262E

Overview

AO4262E from Alpha & Omega Semiconductor is a 60V, 16.5A N-channel MOSFET in SO-8 package with R_DS(ON) < 6.5 mΩ at V_GS = 10 V and < 8.5 mΩ at V_GS = 4.5 V, featuring low gate charge (Q_g = 30–45 nC), HBM Class 2 ESD protection, and 100% UIS testing-designed for high-efficiency secondary synchronous rectification in DC/DC converters.

For engineers reviewing the AO4262E datasheet, pinout, applications, or equivalent options, key selection criteria include its 60V V_DS, 16.5A continuous drain current, SO-8 thermal performance (R_θJA = 75°C/W), body-diode reverse recovery time (t_rr = 19 ns), and gate threshold voltage range (1.2–2.2 V) under varying junction temperatures.

Technical Context

The AO4262E employs Trench Power MV MOSFET technology to achieve low R_DS(ON) and low gate charge simultaneously. Its optimized cell structure supports fast switching with t_D(on) = 6 ns, t_r = 5 ns, t_D(off) = 29 ns, and t_f = 7 ns under standard resistive test conditions (V_GS = 10 V, V_DS = 30 V, R_GEN = 3 Ω).

Thermally, it is characterized with R_θJL = 16°C/W and R_θJA = 75°C/W on 1 in² FR-4 board (2 oz Cu), enabling 2.0 W steady-state power dissipation at T_A = 70°C. The device is fully rated for unclamped inductive switching (UIS) and avalanche energy (E_AS = 79 mJ), with 100% R_g screening.

Key Specifications

Pinout & Package

AO4262E is housed in a standard SO-8 surface-mount package (SOIC-8, 3.9 mm × 4.9 mm), with exposed drain pad for enhanced thermal conduction. Pin 1–8 follow JEDEC MS-012AC outline and are configured as dual-source/dual-drain topology for paralleling in high-current paths.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with Si2302DS-T1-GE3 and IRF7470PBF, the AO4262E delivers superior conduction efficiency at high current, tighter gate threshold distribution (1.2–2.2 V), and guaranteed avalanche ruggedness-making it optimal for 50–150 W synchronous rectifier designs where thermal margin and reliability are critical.

Availability

AO4262E is available at Aetrix Electronics and suitable for high-efficiency AC/DC adapters, server VRM synchronous rectifiers, and industrial DC/DC modules requiring stable component supply, consistent parametric binning, and long-term production continuity.

Supply support for AO4262E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4262E belongs to AOS's Trench Power MV MOSFET product line, engineered specifically for high-frequency, high-efficiency DC/DC conversion where low R_DS(ON), low Q_g, and robust UIS performance are mandatory.

FAQ

What is the maximum continuous drain current rating for AO4262E at 100°C case temperature?

The AO4262E specifies 16.5 A continuous drain current at T_A = 25°C. At T_C = 100°C, derating applies per the SOA curve: maximum I_D drops to approximately 10.2 A due to thermal limits (R_θJA = 75°C/W, P_D = 2.0 W at T_A = 70°C). For precise design, use the normalized R_DS(ON) vs. temperature curve (Figure 4) and junction-to-ambient transient impedance data (Figure 11) when evaluating AO4262E in real layouts.

Does AO4262E support logic-level gate drive from a 3.3 V microcontroller?

Yes, AO4262E has a gate threshold voltage range of 1.2–2.2 V and R_DS(ON) < 8.5 mΩ at V_GS = 4.5 V, making it compatible with 3.3 V logic-level drive when used with appropriate gate buffering. However, full 16.5 A conduction requires V_GS ≥ 4.5 V; for reliable switching at full current, a dedicated 5 V gate driver is recommended. The AO4262E datasheet confirms operation down to 4.5 V in Figure 5 and Table "Electrical Characteristics".

Is AO4262E suitable for unclamped inductive switching (UIS) applications like motor gate drivers?

Yes, AO4262E is 100% UIS tested with E_AS = 79 mJ at T_J = 25°C and rated for repetitive avalanche up to I_AS = 13.0 A. Its trench structure and process validation ensure robustness in hard-switched inductive loads such as half-bridge motor gate drivers. Always verify single-pulse energy against L × I²/2 and confirm T_J remains below 150°C using the SOA curve (Figure 9) when applying AO4262E in such roles.

What is the thermal resistance from junction to lead (R_θJL) for AO4262E, and how does it affect PCB layout?

The AO4262E has R_θJL = 16°C/W, measured from junction to the exposed drain pad. This value highlights the importance of maximizing copper area and thermal vias under the drain pad to leverage the low-junction-to-lead path. PCB layout should use ≥4 thermal vias (0.3 mm diameter) connecting the drain pad to inner-layer ground planes. R_θJL dominates over R_θJA in well-designed boards-thus optimizing the drain pad thermal interface directly improves AO4262E's power handling by up to 35%.

How does the body-diode reverse recovery performance of AO4262E compare to standard Schottky diodes in synchronous rectification?

The AO4262E body diode exhibits t_rr = 19 ns and Q_rr = 60 nC at I_F = 16.5 A and di/dt = 500 A/µs-significantly faster than typical 40 V Schottky diodes (t_rr > 30 ns, Q_rr > 120 nC). While Schottkys have zero reverse recovery, their higher forward voltage (0.4–0.6 V) creates greater conduction loss. The AO4262E's combination of low V_SD = 0.7–1.0 V and fast t_rr makes it superior for >300 kHz synchronous rectification where both conduction and switching losses matter-verified in AO4262E application notes for LLC converters.