Alpha & Omega Semiconductor Inc. AO4264E

Overview

AO4264E from Alpha & Omega Semiconductor is a 60V, 13.5A N-channel Trench Power MOSFET using AlphaSGT™ technology, with R_DS(ON) < 9.8 mΩ at V_GS = 10 V and < 13.5 mΩ at V_GS = 4.5 V, ESD-rated to HBM Class 2, and 100% UIS tested - deployed in high-efficiency DC-DC converters and secondary-side synchronous rectifiers.

For engineers reviewing the AO4264E datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g = 14.5–25 nC), avalanche energy rating (E_AS = 43 mJ), thermal resistance (R_θJA = 75 °C/W), body-diode reverse recovery performance (Q_rr = 59 nC), and SO-8 package compatibility with standard PCB layouts.

Technical Context

This device implements AlphaSGT™ trench-gate silicon technology optimized for low conduction loss and fast switching in medium-voltage power stages. Its gate threshold voltage (1.4–2.4 V) enables robust 4.5 V logic-level drive, while low Q_gd/Q_g ratio (3.5/25 nC typical) supports high dV/dt immunity and reduced Miller-induced shoot-through risk.

The SO-8 package provides dual-drain paralleling capability via four drain pins per side, supporting high-current routing and thermal spreading. The integrated body diode exhibits low forward voltage (V_SD = 0.72–1.0 V) and controlled reverse recovery (t_rr = 18.5 ns, Q_rr = 59 nC), critical for synchronous rectification efficiency in continuous-conduction-mode topologies.

Key Specifications

Pinout & Package

AO4264E is housed in a standard SO-8 surface-mount package with exposed drain pad for enhanced thermal performance. Four drain terminals (pins 1, 2, 3, 4 and 5, 6, 7, 8) are internally paralleled; source (pin S) and gate (pin G) are single-point connections.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with Si2302DS-T1-GE3 and IRF7470PBF, AO4264E offers superior current density (13.5 A in SO-8), lowest R_DS(ON) among 60 V SO-8 devices, and best Q_g/R_DS(ON) figure of merit - making it optimal for high-efficiency, high-power-density synchronous rectifiers and mid-voltage switches.

Availability

AO4264E is available at Aetrix Electronics and suitable for high-efficiency AC-DC adapters, server VRM synchronous rectifiers, and industrial DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for AO4264E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4264E belongs to AOS' AlphaSGT™ product line, engineered specifically for high-current, high-frequency power conversion where low R_DS(ON), fast switching, and avalanche ruggedness are essential.

FAQ

What is the maximum continuous drain current for AO4264E at 70°C ambient temperature?

The AO4264E supports 10.5 A continuous drain current at T_A = 70°C with proper PCB thermal design (1 in² 2 oz copper). This derating reflects its R_θJA = 75 °C/W and T_J(MAX) = 150°C limit. At 25°C ambient, the full 13.5 A rating applies. Thermal performance must be verified in the final layout using the normalized transient impedance curve (Figure 11) for pulsed conditions.

Does AO4264E support 4.5 V logic-level gate drive?

Yes, AO4264E is fully specified for 4.5 V gate drive: R_DS(ON) is guaranteed < 13.5 mΩ at V_GS = 4.5 V and I_D = 11.5 A. Its gate threshold voltage (1.4–2.4 V) ensures strong enhancement-mode behavior with TTL- and CMOS-compatible drivers. No level-shifting circuitry is required in 5 V or 4.5 V control systems.

What is the body diode reverse recovery charge (Qrr) of AO4264E, and why does it matter?

The AO4264E has Q_rr = 59 nC at I_F = 13.5 A and di/dt = 500 A/ms. This value directly impacts switching loss and EMI in synchronous rectifiers: lower Q_rr reduces diode tail current and associated voltage spikes. Compared to legacy 60 V MOSFETs averaging 90–120 nC, AO4264E's 59 nC enables cleaner turn-off and higher efficiency in CCM flyback and LLC topologies.

Is AO4264E suitable for unclamped inductive switching (UIS) applications?

Yes - AO4264E is 100 % UIS tested per JEDEC JESD24-1, with E_AS = 43 mJ at T_J = 25°C. This rating ensures reliable operation in hard-switched converters, relay drivers, and motor controls where inductive energy must be absorbed internally. The device's rugged AlphaSGT™ structure prevents parametric shift or catastrophic failure under repeated UIS stress.

What is the thermal resistance from junction to ambient (RθJA) for AO4264E, and how is it measured?

The AO4264E has R_θJA = 75 °C/W, measured per JEDEC JESD51-2 on a 1 in² FR-4 board with 2 oz copper in still air at T_A = 25°C. This value assumes no additional heatsinking. In real designs, R_θJA varies with copper area, layer count, and airflow; the normalized transient curve (Figure 11) must be used for pulse-width-dependent thermal analysis. For AO4264E, this R_θJA enables 1.5 W continuous dissipation before reaching T_J = 150°C.