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Alpha & Omega Semiconductor Inc. AO4266E

Part No.:
AO4266E
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAO4266E.pdf
Description:
MOSFET N-CHANNEL 60V 11A 8SO
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,925

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Product details

Overview

AO4266E from Alpha & Omega Semiconductor is a 60V, 11A N-channel Trench Power AlphaSGT™ MOSFET in SO-8 package, featuring <13.5mΩ RDS(ON) at VGS=10V, logic-level gate drive (VGS(th) = 1.2–2.2V), and HBM Class 2 ESD protection. It is designed for high-frequency switching and synchronous rectification in DC-DC converters.

For engineers reviewing the AO4266E datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge × RDS(ON) figure-of-merit (Qg(10V) = 13.5–20nC), avalanche-rated ruggedness (EAS = 29mJ), and thermal performance (RθJA = 75°C/W on 1in² FR-4).

Technical Context

This MOSFET employs AlphaSGT™ trench technology to achieve low conduction loss and fast switching. Its logic-level gate enables direct drive from 3.3V/5V controllers without level-shifting, while integrated body diode with trr = 15ns and Qrr = 45nC supports efficient synchronous rectification.

The device is fully characterized for unclamped inductive switching (100% UIS tested) and gate resistance (100% Rg tested), with absolute maximum ratings including 60V VDS, ±20V VGS, and -55°C to +150°C junction temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
VDS60V - supports input rails up to 48V nominal systems with margin
ID (VGS=10V)11A - continuous current capability at full gate drive
RDS(ON) (VGS=10V)<13.5mΩ - reduces conduction loss in high-current power stages
RDS(ON) (VGS=4.5V)<18mΩ - enables robust operation with 5V logic-level drivers
Qg(10V)13.5–20nC - balances switching speed and gate driver loading
EAS29mJ - rated avalanche energy ensures reliability under transient overloads
RθJA75°C/W - thermal resistance on standard 1in² FR-4 board with 2oz copper

Pinout & Package

SO-8 surface-mount package with exposed drain pad for enhanced thermal dissipation. Pin 1 marked via notch or dot; dual-side thermal path design improves power handling.

Pin/TerminalCircuit RoleDesign Meaning
G (Pin 1)GateLogic-level input; threshold 1.2–2.2V; requires low-impedance drive for fast switching
S (Pins 2,3,4)SourceCommon return path; tied to power ground in high-side or low-side configurations
D (Pins 5–8)DrainHigh-current output node; pins 5–8 and exposed pad form parallel drain connection

Key Features

FeatureDesign Value
AlphaSGT™ trench processEnables sub-14mΩ RDS(ON) at 60V while maintaining low Qg and high dV/dt immunity
Logic-level gate driveVGS(th) range of 1.2–2.2V allows direct interface with 3.3V/5V microcontrollers and PWM controllers
HBM Class 2 ESD protectionWithstands ≥2kV human-body-model discharge without degradation-reduces system-level ESD hardening needs
100% UIS and Rg testedGuarantees avalanche ruggedness and gate resistance consistency per unit-critical for automotive and industrial reliability

Applications

Server VRMUSB-C PD Adapter

Use Scenario: High-efficiency 48V-to-12V/5V point-of-load conversion in multi-phase buck regulators.

IC Role / Device Role / Timing Role: Synchronous rectifier in low-side position; switches at 500kHz–1MHz with minimal dead-time loss.

Use Value: <18mΩ RDS(ON) at 4.5V gate drive reduces conduction loss by >25% vs. legacy 60V MOSFETs in same footprint.

Use Scenario: Secondary-side synchronous rectification in 65W–100W USB-C power adapters.

IC Role / Device Role / Timing Role: N-channel switch replacing Schottky diodes; driven by dedicated SR controller with adaptive timing.

Use Value: 15ns trr and 45nC Qrr minimize reverse-recovery loss and improve light-load efficiency by 1.2–1.8%.

Industrial Motor DriveTelecom DC-DC Module

Use Scenario: Half-bridge high-side/low-side switching in 24V brushless DC motor gate drivers.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 3ns) to support precise PWM timing and reduce shoot-through risk.

Use Value: 29mJ EAS rating withstands inductive kickback during fault conditions without failure.

Use Scenario: Input-stage switching in isolated 48V telecom rectifiers with tight thermal constraints.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or LLC resonant topologies.

Use Value: RθJA = 75°C/W and exposed drain pad enable 60% higher power density vs. standard SO-8 MOSFETs at same board area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon IPP60R190C7650V superjunction, 190mΩ, TO-220 - higher voltage, higher RDS(ON), not logic-levelDesigned for offline AC-DC PFC/stage, not low-voltage synchronous rectificationSelect only if 650V blocking and TO-220 mounting are required; not drop-in for AO4266E's 60V SO-8 use cases
Vishay SI7850DP60V, 12A, 12.5mΩ @ 10V, SO-8 - slightly lower RDS(ON), but Qg(10V) = 24nC (vs. 13.5–20nC)Same package and voltage class; higher gate charge increases driver loss in high-frequency designsPrefer AO4266E where gate drive strength or switching frequency >1MHz is critical

Compared with IPP60R190C7 and SI7850DP, the AO4266E delivers optimal trade-off of low RDS(ON), logic-level compatibility, and minimal Qg for 60V synchronous rectification - enabling higher efficiency and simpler gate drive in compact DC-DC converters.

Availability

AO4266E is available at Aetrix Electronics and suitable for server VRMs, USB-C PD adapters, and industrial motor drives requiring stable component supply and consistent parametric performance across production lots.

Supply support for AO4266E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4266E belongs to AOS' AlphaSGT™ logic-level MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification and DC-DC conversion where low gate charge and rugged avalanche performance are essential.

FAQ

What is the maximum continuous drain current for AO4266E at 100°C case temperature?

The AO4266E supports 11A continuous drain current at TA = 25°C with VGS = 10V. At elevated temperatures, derating applies: at TC = 100°C, the practical continuous current is ~6.5A based on its RθJA = 75°C/W and TJ(MAX) = 150°C limit. Always verify thermal design using actual board layout and airflow in the AO4266E application.

Does AO4266E have an integrated Schottky body diode?

No, the AO4266E uses a standard silicon body diode inherent to its N-channel MOSFET structure. Its diode has VSD = 0.72–1.0V at IS = 1A and exhibits trr = 15ns and Qrr = 45nC - optimized for synchronous rectification but not a Schottky replacement. The AO4266E datasheet does not specify Schottky characteristics.

Can AO4266E be used in a high-side configuration with bootstrap gate drive?

Yes, the AO4266E supports high-side operation with bootstrap gate drive due to its logic-level VGS(th) (1.2–2.2V) and rated VGS = ±20V. When used in high-side half-bridges, ensure bootstrap capacitor sizing accounts for Qg = 13.5–20nC and switching frequency to maintain sufficient VGS margin above threshold during conduction. This is confirmed in AO4266E application notes for motor control.

Is AO4266E RoHS and halogen-free compliant?

Yes, the AO4266E is explicitly stated as RoHS and halogen-free compliant per its official datasheet Rev.1.1 (August 2023). Compliance covers lead-free solderability, absence of restricted substances (Pb, Cd, Hg, Cr⁶⁺, PBB, PBDE), and zero brominated flame retardants - verified through AOS' material declarations and third-party testing reports.

What is the recommended PCB layout for thermal performance of AO4266E?

For optimal thermal performance, the AO4266E requires a minimum 1in² copper pour connected to its exposed drain pad (Pins 5–8) on the top layer, with ≥4 thermal vias (0.3mm diameter) to inner ground/power planes. AOS specifies RθJA = 75°C/W measured on 1in² FR-4 with 2oz copper; reducing copper area or omitting vias degrades thermal resistance by 20–40%, directly impacting AO4266E safe operating area.

AO4266E Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
11A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
13.5mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
10 nC @ 4.5 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
755 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SO

AO4266E FAQ

1.How can I place an order for AO4266E through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4266E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4266E reliable?

The price and inventory of AO4266E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4266E is usually 5 days.

3.What payment methods are accepted for AO4266E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4266E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4266E?

AO4266E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4266E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4266E?

For technical support, including AO4266E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4266E requirements.

6.How does Aetrix verify that AO4266E is sourced from the original manufacturer or authorized distributors?

All AO4266E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4266E meets industry standards.

7.What is the process for return or replacement of AO4266E?

All AO4266E units undergo pre-shipment inspection (PSI). If there is an issue with AO4266E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4266E part is unused and in its original packaging.

Return procedure for AO4266E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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