Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AO4296

Part No.:
AO4296
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
8-SOIC (0.154", 3.90mm Width)
Datasheet:
AetrixAO4296.pdf
Description:
MOSFET N-CH 100V 13.5A 8SOIC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:9,616

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AO4296 from Alpha & Omega Semiconductor is a 100V N-Channel Trench Power MOSFET using AlphaSGT™ technology, designed for high-efficiency synchronous rectification in AC/DC quick chargers. It delivers 13.5A continuous drain current at VGS=10V, <8.3mΩ RDS(ON) at 10V, and <10.6mΩ at 4.5V, with low gate charge (Qg=42–60nC) and 100% UIS-tested ruggedness.

For engineers reviewing the AO4296 datasheet, pinout, applications, or equivalent options, key selection criteria include its SO-8 package thermal performance (RθJA=75°C/W), body-diode reverse recovery characteristics (trr=28ns, Qrr=130nC), and verified suitability for high-frequency switching in compact USB PD adapters.

Technical Context

The AO4296 employs AlphaSGT™ trench-gate silicon technology to achieve low conduction loss and fast switching dynamics. Its optimized cell structure supports high current density while maintaining robust avalanche capability (EAS=54mJ) and low gate resistance (Rg=0.7–2.1Ω).

Designed for unidirectional power flow in secondary-side synchronous rectification, it features a low VSD body diode (0.7–1.0V at 1A) and tight VGS(th) distribution (1.3–2.3V), enabling reliable turn-on control with standard 4.5V logic-level gate drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS100V - supports input voltage derating up to 80V DC bus in 24W–65W USB PD chargers
ID (VGS=10V)13.5A - enables single-device operation in ≤65W synchronous rectifier designs
RDS(ON) (VGS=10V)<8.3mΩ - reduces conduction loss to <1.1W at 13.5A, critical for thermally constrained adapters
RDS(ON) (VGS=4.5V)<10.6mΩ - ensures stable on-state performance with 5V gate drive from PWM controllers
Qg (10V)42–60nC - minimizes gate drive power and enables >300kHz switching without excessive driver loss
trr / Qrr28ns / 130nC - limits reverse recovery loss and EMI during hard-switched transitions
RθJA75°C/W - requires ≥1in² 2oz copper pad for safe operation at full load in SO-8 footprint

Pinout & Package

AO4296 is housed in a standard SOIC-8 (SO-8) surface-mount package with exposed drain pads on pins 1–4 and 6–8, source terminals on pins 5 and 6, and gate on pin 3. Thermal performance relies on PCB copper area connected to drain pins.

Pin/TerminalCircuit RoleDesign Meaning
1,2,3,4,6,7,8Drain (D)Parallel-connected high-current output path; electrically and thermally tied to internal die drain
5,6Source (S)Return path for load current; pin 6 shared drain/source connection used for Kelvin sensing in some layouts
3Gate (G)Control terminal requiring <60nC total charge; isolated from power paths to minimize coupling noise

Key Features

FeatureDesign Value
AlphaSGT™ trench technologyEnables <8.3mΩ RDS(ON) in SO-8 without die size penalty, improving power density vs. planar MOSFETs
100% UIS testedGuarantees minimum 54mJ single-pulse avalanche energy, eliminating need for external snubbers in inductive loads
Low Qgd/Qg ratio4.5nC/42nC ≈ 10.7% - suppresses Miller-induced shoot-through in synchronous buck rectifiers
RoHS & halogen-freeMeets IPC-J-STD-609 Class 1 moisture sensitivity and JEDEC MSL-1 reflow requirements for automated assembly
Body diode trr specification28ns max at IF=13.5A - enables clean commutation in CCM flyback and LLC resonant converters

Applications

USB PD Quick Charger Secondary SideHigh-Density AC/DC Adapter

Use Scenario: 65W USB-C power adapter operating at 100–300kHz with synchronous rectification in flyback topology.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by transformer-coupled or controller-based gate signal.

Use Value: Reduces conduction loss by >40% vs. 100V Schottky, enabling >94% efficiency and 25°C lower MOSFET junction temperature at full load.

Use Scenario: Compact 24W wall adapter with minimal PCB area and no heatsink.

IC Role / Device Role / Timing Role: Primary-side active clamp switch or secondary-side rectifier in quasi-resonant flyback.

Use Value: SO-8 footprint supports automated placement; RθJA=75°C/W allows full 13.5A rating with only 1in² 2oz copper, eliminating discrete thermal vias.

Industrial 24V DC-DC ConverterUSB-C Power Delivery Ecosystem

Use Scenario: 24V input, 5V/12A isolated DC-DC module for PoE-powered devices.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary winding of center-tapped forward converter.

Use Value: Low RDS(ON) at 4.5V gate drive ensures stable on-resistance across industrial temperature range (−40°C to +125°C).

Use Scenario: Multi-port USB-C charger supporting simultaneous 20V/3A and 9V/3A outputs.

IC Role / Device Role / Timing Role: Dual-channel synchronous rectifier per output rail, sharing common ground and thermal pad.

Use Value: Matched RDS(ON) and Qg across units ensures balanced current sharing and eliminates need for per-rail current sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Infineon IPP040N10N5100V, 40A, RDS(ON)=3.8mΩ @10V, PG-TDSON-8 package (larger footprint)Higher current rating suits higher-power designs but requires PCB redesignSelect when >20A peak current or lower RDS(ON) is required; not drop-in due to different package and pinout
Vishay SI7850DP100V, 12A, RDS(ON)=9.5mΩ @10V, SO-8, Qg=48nCNear-identical SO-8 footprint and gate drive compatibilityValid alternative for space-constrained 65W designs where 1.2mΩ higher RDS(ON) is acceptable

Compared with IPP040N10N5 and SI7850DP, the AO4296 offers the best balance of SO-8 compatibility, 13.5A rating, and sub-10mΩ RDS(ON), making it optimal for cost-sensitive, thermally constrained USB PD secondary-side rectification without layout change.

Availability

AO4296 is available at Aetrix Electronics and suitable for USB PD quick chargers, high-density AC/DC adapters, and industrial DC-DC converters requiring stable component supply and consistent SO-8 thermal performance.

Supply support for AO4296 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4296 belongs to AOS's AlphaSGT™ low-RDS(ON) MOSFET product line, engineered specifically for high-frequency, high-efficiency synchronous rectification in compact power supplies.

FAQ

What is the maximum continuous drain current rating for AO4296 at 100°C case temperature?

The AO4296 supports 10.5A continuous drain current at TA=70°C (derated from 13.5A at 25°C), and its absolute maximum ID remains limited by package thermal resistance and junction temperature. At 100°C ambient, sustained operation requires active cooling or reduced duty cycle to maintain TJ ≤150°C. The AO4296 datasheet specifies 10.5A as the steady-state rating at TA=70°C, not 100°C.

Does AO4296 support 5V gate drive in synchronous rectifier applications?

Yes, the AO4296 is fully specified for 4.5V gate drive, with RDS(ON) <10.6mΩ at VGS=4.5V and ID=11.5A. Its gate threshold voltage (VGS(th)) ranges from 1.3V to 2.3V, ensuring strong enhancement-mode turn-on with standard 5V logic-level controllers. The AO4296 has been validated in production 5V-driven USB PD secondary-side circuits.

Is AO4296 pin-compatible with other SO-8 N-Channel MOSFETs like AO3400?

No, the AO4296 uses a dual-drain SO-8 configuration (pins 1–4 and 6–8 as Drain, pin 5 and 6 as Source, pin 3 as Gate), whereas AO3400 follows standard SO-8 pinout (Drain on pins 1–3, Source on 5–7, Gate on 2). The AO4296 pinout is specific to high-current SO-8 variants and is not interchangeable with general-purpose SO-8 MOSFETs without PCB revision.

What is the body diode forward voltage of AO4296 at 1A and 25°C?

The AO4296 body diode forward voltage is specified as 0.7V minimum and 1.0V maximum at IS=1A and TJ=25°C. This low VSD improves light-load efficiency in discontinuous conduction mode (DCM) and reduces reverse recovery stress. The AO4296's body diode is characterized across temperature, with VSD decreasing slightly at higher junction temperatures.

How is avalanche ruggedness verified for AO4296?

The AO4296 undergoes 100% Unclamped Inductive Switching (UIS) testing per JEDEC JESD22-A116, with guaranteed minimum single-pulse avalanche energy of 54mJ at TJ=25°C. Each device is tested at rated VDS=100V and IAS=10.5A, ensuring robustness against inductive transients in flyback and forward converters. The AO4296's UIS rating is documented in its official datasheet Rev.2.0.

AO4296 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
8-SOIC (0.154", 3.90mm Width)
Packaging:
Tape & Reel (TR)
Product Status:
Not For New Designs
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
8.3mOhm @ 13.5A, 10V
Vgs(th) (Max) @ Id:
2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
3130 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
3.1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-SOIC

AO4296 FAQ

1.How can I place an order for AO4296 through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4296 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4296 reliable?

The price and inventory of AO4296 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4296 is usually 5 days.

3.What payment methods are accepted for AO4296?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4296 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4296?

AO4296 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4296 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4296?

For technical support, including AO4296 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4296 requirements.

6.How does Aetrix verify that AO4296 is sourced from the original manufacturer or authorized distributors?

All AO4296 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4296 meets industry standards.

7.What is the process for return or replacement of AO4296?

All AO4296 units undergo pre-shipment inspection (PSI). If there is an issue with AO4296, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4296 part is unused and in its original packaging.

Return procedure for AO4296:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AO4296 Tags

  • AO4296
  • AO4296 PDF
  • AO4296 Datasheet
  • AO4296 Specifications
  • AO4296 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AO4296
  • Buy AO4296
  • AO4296 Price
  • AO4296 Distributor
  • AO4296 Supplier
  • AO4296 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER