My Inquiry
My Account
Alpha & Omega Semiconductor Inc. AO4435
- Part No.:
- AO4435
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-SOIC (0.154", 3.90mm Width)
- Datasheet:
-
AO4435.pdf
- Description:
- P
- Quantity:
- Payment:
- Shipping:
Inventory:9,511
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AO4435 from Alpha & Omega Semiconductor is a -30V, -10.5A P-channel MOSFET in SOIC-8 package, featuring RDS(ON) < 14 mΩ at VGS = -20V and ultra-low gate charge (Qg = 24 nC @ 10V). It is designed for high-efficiency load switching and PWM power control in DC-DC converters and battery protection circuits.
For engineers reviewing the AO4435 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based P-channel architecture, -30V breakdown rating, 100% UIS-tested ruggedness, thermal resistance (RθJA = 75°C/W), and compatibility with 4.5V–25V gate drive systems.
Technical Context
The AO4435 employs advanced trench-gate process technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its negative threshold voltage (-1.7 to -3.0V) ensures reliable enhancement-mode turn-on under standard logic-level gate signals.
Designed for unclamped inductive switching (UIS) robustness, the device supports repetitive avalanche energy (EAR = 24 mJ) and features fully characterized dynamic parameters including Qgd/Qgs ratio (0.6), Ciss/Coss ratio (~5.9:1), and fast turn-off delay (tD(off) = 18 ns) - critical for synchronous buck and OR-ing applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -30 V - Maximum drain-source blocking voltage for 12V/24V rail protection and reverse polarity circuits |
| ID (TA=25°C) | -10.5 A - Continuous conduction capability at ambient temperature without heatsink |
| RDS(ON) @ VGS=-10V | < 18 mΩ - Enables <180 mW conduction loss at 10A, suitable for compact thermal designs |
| Qg @ 10V | 24 nC - Low gate charge reduces driver power and enables >500 kHz PWM operation |
| VGS(th) | -1.7 to -3.0 V - Ensures full enhancement with 3.3V or 5V microcontroller GPIOs |
| EAR | 24 mJ - Confirmed unclamped inductive switching ruggedness for motor and solenoid drive |
| RθJA | 75 °C/W - Measured on 1 in² FR-4 board; defines maximum power dissipation in standard PCB layouts |
Pinout & Package
SOIC-8 surface-mount package with exposed drain pad for enhanced thermal performance. Pin 1 marked by notch or dot; pins arranged in dual-row configuration with G-S-S-S-D-D-D-D layout (top view).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts -10V to -25V drive; requires low-impedance source due to Rg = 5.8 Ω |
| 2 (S) | Source | Reference node for gate drive; tied to system ground or positive rail in high-side switch topology |
| 3 (S) | Source | Parallel source connection for reduced bond-wire inductance and improved current sharing |
| 4 (S) | Source | Third source terminal supporting high-current return path in power distribution networks |
| 5 (D) | Drain | Main current output; connected to load or input rail; electrically tied to exposed pad |
| 6 (D) | Drain | Second drain terminal for lower RDS(ON) and reduced thermal resistance via multiple die connections |
| 7 (D) | Drain | Third drain terminal enhancing current handling and thermal spreading across SOIC-8 body |
| 8 (D) | Drain | Fourth drain terminal completing quad-drain configuration for optimized power density |
Key Features
| Feature | Design Value |
|---|---|
| Advanced trench MOSFET structure | Delivers RDS(ON) < 14 mΩ @ -20V while maintaining gate oxide reliability up to ±25V |
| 100% UIS tested | Guarantees single-pulse avalanche survival up to 24 mJ - eliminates need for external snubbers in inductive loads |
| Ultra-low Qg/Qgd ratio | Qgd/Qg ≈ 0.14 enables clean Miller plateau transition and reduces shoot-through risk in half-bridge designs |
| Body diode with low VSD | VSD = -0.74 V @ -1A ensures efficient freewheeling in synchronous rectification and OR-ing applications |
| Halogen-free & RoHS compliant | Meets IPC-1752A material declaration requirements for consumer and industrial end-equipment compliance |
Applications
| Battery Protection Circuit | DC-DC Synchronous Buck Converter |
|---|---|
Use Scenario: Reverse polarity and overcurrent protection in portable Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel switch controlling main power path between battery and system load. Use Value: RDS(ON) < 18 mΩ limits voltage drop to <180 mV at 10A, preserving battery runtime and enabling accurate current sensing. | Use Scenario: Upper switch in 12V-to-3.3V synchronous buck regulator for FPGA or SoC power rails. IC Role / Device Role / Timing Role: High-side P-channel MOSFET operating in hard-switched mode with 500 kHz–1 MHz frequency. Use Value: Qg = 24 nC allows direct drive from low-power PWM controllers, reducing gate driver component count and board area. |
| Hot-Swap Controller Interface | Industrial PLC I/O Module |
Use Scenario: Inrush current limiting and fault isolation in 24V backplane hot-swap cards. IC Role / Device Role / Timing Role: Load switch controlled by dedicated hot-swap IC (e.g., LTC4215) to manage power-up sequencing. Use Value: 100% UIS-rated ruggedness withstands repeated insertion transients without derating or external clamping. | Use Scenario: Output stage for 24V digital output modules driving solenoids and relays. IC Role / Device Role / Timing Role: P-channel power switch interfacing with isolated microcontroller outputs via level-shifting circuitry. Use Value: VGS(th) range (-1.7 to -3.0 V) ensures consistent turn-on with 3.3V logic, eliminating need for gate boosters. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2305DS | RDS(ON) = 48 mΩ @ -4.5V; SO-8 package; lower ID rating (-4.1A) | Lower current capacity limits use to sub-5A loads; higher RDS(ON) increases conduction loss by ~2.7× | Select when gate drive is limited to 4.5V and peak current ≤ 4A; not suitable for AO4435's 10.5A continuous duty. |
| IRF7424PbF | RDS(ON) = 20 mΩ @ -10V; TO-252 package; higher RθJA (100°C/W) | Requires heatsinking above 3.5A; larger footprint and manual reflow challenges vs. SOIC-8 | Choose for higher surge current tolerance (IDM = -60A) where thermal mass outweighs PCB space constraints. |
Compared with Si2305DS and IRF7424PbF, the AO4435 delivers superior current density (10.5A in SOIC-8), lowest RDS(ON) among SO-8 P-channels at -10V, and integrated UIS ruggedness - making it optimal for space-constrained, medium-power load switching where gate drive ≥ 5V is available.
Availability
AO4435 is available at Aetrix Electronics and suitable for battery management systems, industrial I/O modules, DC-DC converters, and hot-swap controllers requiring stable component supply and long-term production continuity.
Supply support for AO4435 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AO4435 belongs to AOS's Trench Power™ P-channel MOSFET product line, engineered specifically for high-efficiency, low-voltage load switching and PWM applications where low gate charge and rugged UIS performance are critical.
FAQ
What is the maximum continuous drain current for AO4435 at 70°C ambient temperature?
The AO4435 supports -8 A continuous drain current at TA = 70°C (derated from -10.5 A at 25°C), based on its thermal resistance (RθJA = 75°C/W) and maximum junction temperature of 150°C. This rating assumes mounting on a 1 in² FR-4 board with 2 oz copper and still air conditions. For higher current operation, thermal design must ensure TJ remains within limit - the AO4435 datasheet provides SOA curves for pulse conditions.
Can AO4435 be driven directly by a 3.3V microcontroller GPIO?
Yes, the AO4435 can be driven directly by a 3.3V microcontroller GPIO because its gate threshold voltage (VGS(th)) ranges from -1.7 V to -3.0 V, ensuring reliable turn-on at -3.3V. However, RDS(ON) will be higher (~36 mΩ at VGS = -3.3V), increasing conduction loss. For full performance (RDS(ON) < 18 mΩ), a -10V gate drive is recommended - often implemented using a simple charge pump or level shifter.
Does AO4435 include integrated ESD protection on the gate?
No, the AO4435 does not integrate gate ESD protection diodes. Its gate oxide is rated for ±25V absolute maximum, but transient ESD events exceeding human-body model (HBM) 2 kV may cause damage. External gate protection - such as a 10 kΩ series resistor and 12 V Zener clamp to source - is recommended during handling and in-circuit operation, especially in automated assembly or high-static environments where the AO4435 is deployed.
What is the body diode forward voltage of AO4435 at -1A?
The body diode forward voltage (VSD) of the AO4435 is -0.74 V (typical) and -1.0 V (maximum) at IS = -1 A and TJ = 25°C. This low VSD enables efficient freewheeling in synchronous buck topologies and reduces power loss during reverse recovery. The diode exhibits soft recovery characteristics (Qrr = 12 nC), minimizing voltage overshoot and EMI in high-frequency switching applications involving the AO4435.
Is AO4435 suitable for automotive applications?
No, the AO4435 is explicitly qualified only for the consumer market per its datasheet disclaimer. It is not AEC-Q101 qualified, lacks automotive-grade screening (e.g., HTOL, temperature cycling), and is not authorized for use in life-support or safety-critical automotive systems. For automotive-grade alternatives, consider AOS's AON6414 or Vishay's SI7157DP - both AEC-Q101 certified P-channel MOSFETs with comparable RDS(ON) and SO-8 packaging.
AO4435 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-SOIC (0.154", 3.90mm Width)
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 10.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 20V
- Rds On (Max) @ Id, Vgs:
- 14mOhm @ 11A, 20V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±25V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3.1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-SOIC
AO4435 FAQ
1.How can I place an order for AO4435 through Aetrix?
Please submit a Request for Quotation (RFQ) for AO4435 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AO4435 reliable?
The price and inventory of AO4435 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4435 is usually 5 days.
3.What payment methods are accepted for AO4435?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4435 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AO4435?
AO4435 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AO4435 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AO4435?
For technical support, including AO4435 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4435 requirements.
6.How does Aetrix verify that AO4435 is sourced from the original manufacturer or authorized distributors?
All AO4435 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4435 meets industry standards.
7.What is the process for return or replacement of AO4435?
All AO4435 units undergo pre-shipment inspection (PSI). If there is an issue with AO4435, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AO4435 part is unused and in its original packaging.
Return procedure for AO4435:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AO4435 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
