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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AO4435L

Name: AO4435L
Brand: Alpha & Omega Semiconductor Inc.
SKU: AO4435L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AO4435L

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AO4435L.pdf

Description:: MOSFET P-CH 30V 10.5A 8SOIC

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Product details

Overview

AO4435L from Alpha & Omega Semiconductor is a -30V, -10.5A P-channel enhancement-mode MOSFET in SOIC-8 package, featuring R_DS(ON) < 14 mΩ at V_GS = -20V and < 18 mΩ at V_GS = -10V. It delivers ultra-low gate charge (Q_g = 24 nC @ 10V), 100% UIS-tested ruggedness, and operates across -55°C to +150°C junction range. It serves as a high-efficiency load switch in DC-DC converters and battery protection circuits.

For engineers reviewing the AO4435L datasheet, pinout, applications, or equivalent options, key selection criteria include verified P-channel R_DS(ON) performance at -10V gate drive, SOIC-8 thermal resistance (R_θJA = 75°C/W), body-diode recovery (t_rr = 30 ns), and avalanche energy rating (E_AR = 24 mJ).

Technical Context

This P-channel MOSFET employs advanced trench technology to achieve low on-resistance and fast switching with minimal gate drive requirements. Its gate threshold voltage (V_GS(th)) ranges from -1.7V to -3.0V, enabling reliable turn-on with standard logic-level control down to -4.5V.

Dynamic parameters are characterized under defined test conditions: V_GS = -10V, V_DS = -15V, I_D = -10A, R_GEN = 3Ω, and R_L = 1.5Ω. Switching times include t_d(on) = 8.7 ns, t_r = 8.5 ns, t_d(off) = 18 ns, and t_f = 7 ns - confirming suitability for high-frequency PWM operation up to several hundred kHz.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-30 V - Maximum drain-source blocking voltage; defines safe operating range in negative-rail switching applications.
R_DS(ON) @ V_GS = -10V	< 18 mΩ - Enables low conduction loss in 5V/3.3V gate-driven load switches and synchronous rectifiers.
I_D (continuous)	-10.5 A @ T_A = 25°C - Supports sustained current handling in compact SOIC-8 footprint without forced airflow.
Q_g @ 10V	18–24 nC - Low total gate charge reduces driver power and enables efficient high-speed switching.
t_rr	25–30 ns - Fast body-diode recovery minimizes shoot-through risk and improves efficiency in bidirectional or freewheeling paths.
E_AR	24 mJ - Unclamped inductive switching rating ensures robustness against transient energy in motor or solenoid drive circuits.
R_θJA	75 °C/W - Thermal resistance measured on 1 in² FR-4 board with 2 oz copper; informs heatsinking requirements for continuous operation.

Pinout & Package

SOIC-8 surface-mount package with exposed drain pad (top view: D-D-D-D-S-S-S-G; bottom view: D-D-D-D-S-S-S-G). Pin 1 marked by notch or dot; pins 1–4 and 5–8 are drain and source/gate terminals respectively.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	Internally paralleled for low-inductance, high-current path; connected to exposed thermal pad for heat dissipation.
5	Source (S)	Common return node for load current; referenced to system ground in high-side switch configurations.
8 (G)	Gate (G)	Control input requiring negative voltage relative to source to turn on; compatible with standard logic-level drivers.

Key Features

Feature	Design Value
100% UIS tested	Guarantees unclamped inductive switching capability up to 24 mJ per pulse - critical for relay/motor drive reliability.
Ultra-low Q_g	24 nC max @ 10V gate drive - reduces gate driver losses and enables higher PWM frequencies without excessive heating.
R_DS(ON) < 18 mΩ @ -10V	Enables full enhancement using common -10V supply rails - eliminates need for charge pumps in many industrial control designs.
RoHS & Halogen Free	Complies with environmental regulations for consumer and industrial end equipment without compromising electrical performance.
Body diode optimized	t_rr = 30 ns and Q_rr = 12 nC - supports efficient freewheeling in buck converters and reverse-polarity protection circuits.

Applications

Battery Protection Circuit	DC-DC Synchronous Buck Converter
Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active OR-ing and discharge control switch. Use Value: R_DS(ON) < 18 mΩ at -10V gate drive minimizes voltage drop and self-heating during 5–8A continuous discharge.	Use Scenario: Low-side synchronous rectifier in 3.3V/5V output buck regulators. IC Role / Device Role / Timing Role: Power switch replacing Schottky diode to reduce conduction loss and improve efficiency. Use Value: Fast t_rr = 30 ns and low Q_rr = 12 nC prevent cross-conduction and minimize switching loss during dead-time transitions.
Industrial Load Switch	USB Port Power Control
Use Scenario: Controlled power-up/down of peripheral modules in PLC I/O cards and sensor hubs. IC Role / Device Role / Timing Role: Logic-controlled high-side switch enabling soft-start and fault isolation. Use Value: V_GS(th) = -2.3V typ allows clean turn-on with -3.3V/-5V control signals; 100% UIS testing ensures surge immunity.	Use Scenario: Over-current and short-circuit protected 5V USB VBUS switching in host controllers. IC Role / Device Role / Timing Role: Current-limiting and fault-isolating P-channel switch with integrated thermal shutdown margin. Use Value: R_θJA = 75°C/W and TJ,max = 150°C support sustained 2A loads in compact USB Type-A port layouts.

Battery Protection Circuit

DC-DC Synchronous Buck Converter

Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET acting as active OR-ing and discharge control switch.

Use Value: R_DS(ON) < 18 mΩ at -10V gate drive minimizes voltage drop and self-heating during 5–8A continuous discharge.

Use Scenario: Low-side synchronous rectifier in 3.3V/5V output buck regulators.

IC Role / Device Role / Timing Role: Power switch replacing Schottky diode to reduce conduction loss and improve efficiency.

Use Value: Fast t_rr = 30 ns and low Q_rr = 12 nC prevent cross-conduction and minimize switching loss during dead-time transitions.

Industrial Load Switch

USB Port Power Control

Use Scenario: Controlled power-up/down of peripheral modules in PLC I/O cards and sensor hubs.

IC Role / Device Role / Timing Role: Logic-controlled high-side switch enabling soft-start and fault isolation.

Use Value: V_GS(th) = -2.3V typ allows clean turn-on with -3.3V/-5V control signals; 100% UIS testing ensures surge immunity.

Use Scenario: Over-current and short-circuit protected 5V USB VBUS switching in host controllers.

IC Role / Device Role / Timing Role: Current-limiting and fault-isolating P-channel switch with integrated thermal shutdown margin.

Use Value: R_θJA = 75°C/W and TJ,max = 150°C support sustained 2A loads in compact USB Type-A port layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2305DS-T1-E3	R_DS(ON) = 48 mΩ @ -4.5V; lower ID (-4.1A); SOT-23 package	Lower current capacity and higher on-resistance limit use to sub-2A loads and space-constrained PCBs	Select when board area is critical and load current ≤ 2A; not suitable for AO4435L's 10.5A duty.
IRF7425PBF	R_DS(ON) = 22 mΩ @ -10V; SO-8 package; higher Q_g (39 nC); no UIS rating specified	Lacks guaranteed UIS ruggedness and has slower switching due to higher gate charge	Acceptable for non-inductive, low-frequency switching where avalanche stress is absent.

Compared with Si2305DS-T1-E3 and IRF7425PBF, the AO4435L provides superior current density (10.5A in SOIC-8), lowest R_DS(ON) at -10V among alternatives, and factory-verified UIS performance - making it preferred for battery management and industrial PWM loads demanding both efficiency and ruggedness.

Availability

AO4435L is available at Aetrix Electronics and suitable for battery protection circuits, DC-DC synchronous rectifiers, industrial load switches, and USB power control applications requiring stable component supply and consistent SOIC-8 sourcing.

Supply support for AO4435L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO4435L belongs to AOS's "AlphaMOS" trench-based P-channel MOSFET family, engineered for high-efficiency, logic-level-compatible switching in battery-powered and space-constrained systems.

FAQ

What is the maximum continuous drain current for AO4435L at 70°C ambient temperature?

The AO4435L supports -8 A continuous drain current at T_A = 70°C, derated from its -10.5 A rating at 25°C. This value is based on thermal limits of the SOIC-8 package and assumes standard PCB layout (1 in² FR-4, 2 oz copper). The AO4435L must be thermally managed to avoid exceeding T_J(max) = 150°C under sustained load.

Does AO4435L support logic-level gate drive at -4.5V?

Yes, the AO4435L turns on with -4.5V gate drive, delivering R_DS(ON) < 36 mΩ at that voltage. While not fully enhanced, this level supports moderate-current switching in low-voltage control systems. For optimal performance, AO4435L requires -10V or -20V gate drive to achieve < 18 mΩ or < 14 mΩ respectively.

Is AO4435L rated for unclamped inductive switching (UIS)?

Yes, the AO4435L is 100% UIS tested with E_AR = 24 mJ at T_J = 25°C. This rating confirms its ability to safely absorb inductive energy during turn-off transients in motor drivers, solenoid controls, and relay interfaces without failure - a key differentiator versus non-tested MOSFETs.

What is the gate threshold voltage range for AO4435L?

The AO4435L has a gate threshold voltage (V_GS(th)) range of -1.7 V to -3.0 V at I_D = -250 µA. This ensures predictable turn-on behavior across process and temperature variation, supporting reliable operation in battery-powered systems where gate drive voltage may sag.

Can AO4435L be used as a replacement for N-channel MOSFETs in high-side configurations?

No - the AO4435L is a P-channel device designed for high-side switching where the source connects to the positive rail. It cannot replace an N-channel MOSFET directly without circuit redesign, as N-channel devices require gate voltage above the source (often needing a charge pump), whereas AO4435L uses simple negative gate drive relative to source.

AO4435L Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 10.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 5V, 20V

Rds On (Max) @ Id, Vgs:: 14mOhm @ 11A, 20V

Vgs(th) (Max) @ Id:: 3V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±25V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AO4435L FAQ

1.How can I place an order for AO4435L through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4435L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4435L reliable?

The price and inventory of AO4435L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4435L is usually 5 days.

3.What payment methods are accepted for AO4435L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4435L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4435L?

AO4435L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4435L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4435L?

For technical support, including AO4435L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4435L requirements.

6.How does Aetrix verify that AO4435L is sourced from the original manufacturer or authorized distributors?

All AO4435L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4435L meets industry standards.

7.What is the process for return or replacement of AO4435L?

All AO4435L units undergo pre-shipment inspection (PSI). If there is an issue with AO4435L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4435L part is unused and in its original packaging.

Return procedure for AO4435L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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