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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AO4443

Name: AO4443
Brand: Alpha & Omega Semiconductor Inc.
SKU: AO4443
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AO4443

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 8-SOIC (0.154", 3.90mm Width)

Datasheet:: AO4443.pdf

Description:: MOSFET P-CH 40V 6A 8SOIC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AO4443 from Alpha & Omega Semiconductor is a 40V P-Channel enhancement-mode MOSFET in SOIC-8 package, featuring R_DS(ON) < 42 mΩ at V_GS = −10 V and < 63 mΩ at V_GS = −4.5 V, with −6 A continuous drain current rating. It is designed for low-side load switching and battery protection circuits in portable power management systems.

For engineers reviewing the AO4443 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based P-channel architecture, UIS-rated ruggedness, gate threshold voltage range (−1.5 V to −2.6 V), and SOIC-8 thermal performance with R_θJA = 75 °C/W on 1-in² FR-4 board.

Technical Context

The AO4443 employs advanced trench-gate technology to achieve low on-resistance while maintaining fast switching characteristics: t_D(on) = 10.3 ns, t_D(off) = 39 ns, and Q_g(10V) = 17.3–22 nC. Its body diode supports reverse recovery time t_rr = 17–24 ns and Q_rr = 11.5 nC under IF = −6 A, dI/dt = 100 A/µs conditions.

Thermally, it is rated for junction temperatures from −55 °C to 150 °C, with maximum power dissipation of 2 W at T_A = 70 °C and 3.1 W at T_A = 25 °C. The device undergoes 100% UIS and R_g testing per production lot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−40 V - Maximum drain-source blocking voltage for battery protection up to 3-cell Li-ion stacks.
I_D (V_GS = −10 V)	−6 A - Continuous conduction capability at full gate drive, suitable for 5 V logic-controlled switches.
R_DS(ON) (V_GS = −10 V)	< 42 mΩ - Enables <100 mW conduction loss at 6 A, critical for thermally constrained PCB layouts.
R_DS(ON) (V_GS = −4.5 V)	< 63 mΩ - Ensures reliable turn-on with standard 5 V microcontroller GPIO without level-shifting.
Q_g(10V)	17.3–22 nC - Determines gate driver strength requirement; compatible with low-power logic-level drivers.
t_rr	17–24 ns - Supports high-frequency synchronous rectification and minimizes body-diode switching loss.
V_GS(th)	−1.5 to −2.6 V - Enables robust turn-on margin against noise in noisy automotive or industrial environments.

Pinout & Package

SOIC-8 surface-mount package with exposed drain pads (pins 1–4 and 6–8 connected to drain); thermal resistance R_θJL = 3.1 °C/W enables efficient heat transfer to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
1, 2, 3, 4, 6, 7, 8	Drain (D)	High-current output node; internally paralleled for low R_DS(ON) and enhanced thermal conduction.
5	Gate (G)	Control input requiring ≤22 nC charge; sensitive to ESD (±20 V max V_GS).
Source (S)	Source (S)	Reference node for gate drive; tied to system ground in high-side switch configurations.

Key Features

Feature	Design Value
100% UIS tested	Guarantees unclamped inductive switching survivability up to E_AS = 20 mJ, eliminating need for external snubbers in relay/motor drive loads.
Trench P-channel architecture	Delivers lower R_DS(ON) per die area than planar alternatives, enabling smaller footprint in space-constrained battery packs.
Low V_GS(th) distribution	Narrow −1.5 V to −2.6 V threshold ensures consistent turn-on across temperature and process variation in mass-produced consumer devices.
SOIC-8 with drain-connected leads	Provides 7× higher current-carrying capacity versus standard SOIC-8 by routing all drain pins to internal copper frame.

Applications

Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Overvoltage, overcurrent, and short-circuit protection in 2- or 3-cell Li-ion battery packs. IC Role / Device Role / Timing Role: Low-side protection switch controlling discharge path between battery and system load. Use Value: R_DS(ON) < 63 mΩ at V_GS = −4.5 V ensures minimal voltage drop during fault isolation, preserving battery runtime.	Use Scenario: Hot-swap control for USB-C power delivery ports supporting 5–20 V input ranges. IC Role / Device Role / Timing Role: Reverse-polarity and inrush current limiting switch placed between connector and downstream DC-DC converter. Use Value: Fast t_D(off) = 39 ns and low Q_g enable precise timing control during plug/unplug events without latch-up.
Load Switch for Portable Devices	Power-Path Management in Smartphones
Use Scenario: Controlled power-up/down sequencing of peripherals (e.g., cameras, sensors) in wearables and tablets. IC Role / Device Role / Timing Role: High-side or low-side load switch driven directly by 3.3 V/5 V GPIOs. Use Value: V_GS(th) ≤ −2.6 V guarantees full enhancement with 3.3 V logic, eliminating need for gate boosters.	Use Scenario: Dual-path power routing between battery and USB adapter in smartphone charging ICs. IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with AO4443 as one device) implementing ideal diode behavior and reverse current blocking. Use Value: Matched R_DS(ON) and t_rr ensure balanced current sharing and prevent shoot-through during path transitions.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Overvoltage, overcurrent, and short-circuit protection in 2- or 3-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: Low-side protection switch controlling discharge path between battery and system load.

Use Value: R_DS(ON) < 63 mΩ at V_GS = −4.5 V ensures minimal voltage drop during fault isolation, preserving battery runtime.

Use Scenario: Hot-swap control for USB-C power delivery ports supporting 5–20 V input ranges.

IC Role / Device Role / Timing Role: Reverse-polarity and inrush current limiting switch placed between connector and downstream DC-DC converter.

Use Value: Fast t_D(off) = 39 ns and low Q_g enable precise timing control during plug/unplug events without latch-up.

Load Switch for Portable Devices

Power-Path Management in Smartphones

Use Scenario: Controlled power-up/down sequencing of peripherals (e.g., cameras, sensors) in wearables and tablets.

IC Role / Device Role / Timing Role: High-side or low-side load switch driven directly by 3.3 V/5 V GPIOs.

Use Value: V_GS(th) ≤ −2.6 V guarantees full enhancement with 3.3 V logic, eliminating need for gate boosters.

Use Scenario: Dual-path power routing between battery and USB adapter in smartphone charging ICs.

IC Role / Device Role / Timing Role: Back-to-back P-MOSFET pair (with AO4443 as one device) implementing ideal diode behavior and reverse current blocking.

Use Value: Matched R_DS(ON) and t_rr ensure balanced current sharing and prevent shoot-through during path transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DS-T1-E3	R_DS(ON) = 115 mΩ @ V_GS = −4.5 V; SOT-23 package; lower I_D = −2.7 A	Lower current handling limits use to sub-2 A loads; unsuitable for battery protection above 2 A.	Select when board space is critical and load current remains below 2.5 A.
DMG2305UVT-7	R_DS(ON) = 48 mΩ @ V_GS = −4.5 V; same SOIC-8; higher Q_g = 28 nC	Higher gate charge increases driver power demand and slows switching vs. AO4443 in high-frequency PWM.	Prefer where slightly higher R_DS(ON) is acceptable but tighter V_GS(th) tolerance is required.

Compared with Si2301DS-T1-E3 and DMG2305UVT-7, the AO4443 offers the lowest R_DS(ON) at −4.5 V among SOIC-8 P-channel MOSFETs in its class, delivering superior conduction efficiency for 5–6 A battery-switching applications without increasing gate drive complexity.

Availability

AO4443 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, portable device load switching, and smartphone power-path management requiring stable component supply and long-term lifecycle support.

Supply support for AO4443 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for consumer, computing, and industrial markets.

The AO4443 belongs to AOS's TrenchP™ P-channel MOSFET product line, engineered specifically for low-voltage, high-current load switching where low gate charge and rugged UIS performance are essential.

FAQ

What is the maximum continuous drain current rating for the AO4443?

The AO4443 has a maximum continuous drain current I_D of −6 A at T_A = 25 °C with V_GS = −10 V. At elevated ambient temperatures (e.g., T_A = 70 °C), the rating reduces to −4 A due to thermal derating. This value is validated under SOIC-8 mounting conditions on 1-in² FR-4 board with 2 oz copper.

Does the AO4443 support logic-level gate drive from a 3.3 V microcontroller?

Yes, the AO4443 supports logic-level operation with V_GS(th) ranging from −1.5 V to −2.6 V, ensuring full enhancement at V_GS = −3.3 V. Its R_DS(ON) remains < 63 mΩ at V_GS = −4.5 V, making it compatible with 3.3 V and 5 V GPIOs without external level shifting-critical for direct interfacing in the AO4443 design.

Is the AO4443 suitable for battery protection in 3-cell Li-ion packs?

Yes, the AO4443's −40 V V_DS rating provides 20 % headroom above the 3-cell Li-ion maximum voltage of 12.6 V, and its 100 % UIS testing ensures reliability during inductive load transients. Its low R_DS(ON) minimizes voltage drop during overcurrent shutdown, preserving protection accuracy in the AO4443 implementation.

What is the thermal resistance from junction to ambient (R_θJA) for the AO4443?

The AO4443 has a typical R_θJA of 75 °C/W when mounted on a 1-in² FR-4 board with 2 oz copper in still air. This value assumes standard SOIC-8 layout; actual performance depends on PCB copper area and airflow. For thermal design validation, always reference the AO4443 datasheet's transient impedance curves (Figure 12).

How does the AO4443 compare to N-channel alternatives in load switch applications?

The AO4443 simplifies circuit design in low-side switching by eliminating the need for high-side gate drivers or charge pumps required by N-channel MOSFETs. Its P-channel topology allows direct logic-level control and inherent reverse-current blocking-key advantages in battery-powered AO4443 deployments where board area and BOM count must be minimized.

AO4443 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 8-SOIC (0.154", 3.90mm Width)

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 6A, 10V

Vgs(th) (Max) @ Id:: 2.6V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1175 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3.1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 8-SOIC

AO4443 FAQ

1.How can I place an order for AO4443 through Aetrix?

Please submit a Request for Quotation (RFQ) for AO4443 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO4443 reliable?

The price and inventory of AO4443 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO4443 is usually 5 days.

3.What payment methods are accepted for AO4443?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO4443 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO4443?

AO4443 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO4443 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO4443?

For technical support, including AO4443 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO4443 requirements.

6.How does Aetrix verify that AO4443 is sourced from the original manufacturer or authorized distributors?

All AO4443 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO4443 meets industry standards.

7.What is the process for return or replacement of AO4443?

All AO4443 units undergo pre-shipment inspection (PSI). If there is an issue with AO4443, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO4443 part is unused and in its original packaging.

Return procedure for AO4443:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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