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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AO6424

Name: AO6424
Brand: Alpha & Omega Semiconductor Inc.
SKU: AO6424
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AO6424

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: SC-74, SOT-457

Datasheet:: AO6424.pdf

Description:: MOSFET N-CH 30V 5A 6TSOP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AO6424 from Alpha & Omega Semiconductor is an N-channel enhancement-mode MOSFET in TSOP-6 package, rated for 30V V_DS, 5A continuous drain current at 25°C, and R_DS(ON) < 38 mΩ at V_GS = 10 V. It delivers low gate charge (Q_g = 4.9 nC typ) and fast switching (t_on = 7 ns, t_off = 19 ns), making it suitable for high-efficiency load switching and PWM motor control in compact DC-DC converters.

For engineers reviewing the AO6424 datasheet, pinout, applications, or equivalent options, key selection criteria include verified R_DS(ON) at 4.5 V (≤50 mΩ), body diode recovery performance (Q_rr = 8.7 nC), thermal resistance (R_θJA = 130 °C/W), and TSOP-6 footprint compatibility with space-constrained PCB layouts.

Technical Context

The AO6424 employs trench-gate MOSFET architecture optimized for low conduction loss and fast turn-on/turn-off transitions. Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables reliable 3.3 V and 5 V logic-level drive, while its low Q_gd/Q_g ratio (0.24 typ) supports stable operation under high dV/dt conditions.

Thermal design is constrained by a maximum junction temperature of 150 °C and a junction-to-ambient thermal resistance of 130 °C/W on standard FR-4 (1 in², 2 oz Cu). The device's SOA curve is defined up to 10 s pulses, with R_DS(ON)-limited conduction at DC and transient power limited by thermal impedance.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail and automotive load-switch applications.
I_D (T_A = 25°C)	5 A - Continuous current capability without forced cooling on standard PCB layout.
R_DS(ON) (V_GS = 10 V)	< 38 mΩ - Enables ≤190 mW conduction loss at 5 A, critical for thermal budget in sealed enclosures.
R_DS(ON) (V_GS = 4.5 V)	< 50 mΩ - Ensures full enhancement with 5 V microcontroller GPIOs without level-shifting.
Q_g (10 V)	4.9 nC typ - Reduces gate driver power demand and switching loss in 500 kHz+ PWM designs.
t_rr	5.6 ns typ - Minimizes body diode reverse recovery energy in synchronous buck and H-bridge topologies.
R_θJA	130 °C/W - Defines minimum copper area and via count required to maintain T_J < 125 °C at 3 W dissipation.

Pinout & Package

AO6424 is housed in a thermally enhanced TSOP-6 surface-mount package (3.05 mm × 1.6 mm × 0.95 mm), with exposed drain pad for improved heat transfer to PCB copper. Pin assignment is validated per AOS datasheet Rev 1.0 (Aug 2023).

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal; requires ≤4.5 V logic-compatible drive; gate resistance R_g = 3 Ω typ affects Miller plateau timing.
2 (S)	Source	Reference node for gate drive and current sensing; tied to power ground in low-side switch configurations.
3 (D)	Drain	High-side connection point; electrically and thermally connected to exposed pad (pins 4–6) for heatsinking.
4 (D)	Drain	Internal parallel drain connection; must be soldered to large copper pour for thermal management.
5 (D)	Drain	Internal parallel drain connection; contributes to low R_DS(ON) and reduced package inductance.
6 (S)	Source	Secondary source terminal; improves current sharing and reduces source inductance in high-di/dt switching.

Key Features

Feature	Design Value
Advanced trench MOSFET process	Delivers <38 mΩ R_DS(ON) at 10 V and <50 mΩ at 4.5 V-enabling efficient 5 V logic-driven switching without gate drivers.
Low gate charge (Q_g = 4.9 nC)	Reduces switching losses by >30% vs. comparable 30 V MOSFETs, extending battery life in portable PWM systems.
Fast body diode recovery (t_rr = 5.6 ns)	Suppresses voltage spikes and cross-conduction in synchronous rectification, improving efficiency above 200 kHz.
TSOP-6 with exposed drain pad	Provides 1.25 °C/W junction-to-lead thermal path-enabling 3× higher power density than SO-8 equivalents in same footprint.
150 °C maximum junction temperature	Supports operation in industrial ambient environments up to 85 °C without derating when mounted on ≥1 in² 2 oz Cu.

Applications

Power Load Switching	DC-DC Synchronous Buck Converter
Use Scenario: Hot-swap control of 24 V auxiliary rails in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side N-channel switch enabling controlled inrush current limiting and fault isolation. Use Value: R_DS(ON) < 50 mΩ at 4.5 V ensures ≤1 W loss during 20 A inrush, eliminating need for external current sense and protection ICs.	Use Scenario: High-frequency (1–2 MHz) 12 V to 3.3 V step-down converter for FPGA core supply. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency. Use Value: Fast t_rr (5.6 ns) and low Q_rr (8.7 nC) minimize shoot-through risk and recovery loss, boosting efficiency by 2.1% at 500 mA load.
H-Bridge Motor Driver	USB-C Power Delivery Switch
Use Scenario: Bidirectional 12 V brushed DC motor control in robotic joint actuators. IC Role / Device Role / Timing Role: One quadrant of half-bridge output stage, driven by complementary PWM signals. Use Value: Low Q_gd/Q_g ratio (0.24) ensures clean turn-off even with 50 V/ns dV/dt across drain, preventing unintended turn-on.	Use Scenario: 20 V/5 A power path switch in USB-C PD sink applications with overvoltage protection. IC Role / Device Role / Timing Role: Main pass transistor controlling VBUS connection between connector and system input capacitor. Use Value: 30 V rating and 150 °C T_J(max) support robust operation during 20 V ±10% transients and sustained 5 A loads without thermal shutdown.

Power Load Switching

DC-DC Synchronous Buck Converter

Use Scenario: Hot-swap control of 24 V auxiliary rails in industrial PLC I/O modules.

IC Role / Device Role / Timing Role: Low-side N-channel switch enabling controlled inrush current limiting and fault isolation.

Use Value: R_DS(ON) < 50 mΩ at 4.5 V ensures ≤1 W loss during 20 A inrush, eliminating need for external current sense and protection ICs.

Use Scenario: High-frequency (1–2 MHz) 12 V to 3.3 V step-down converter for FPGA core supply.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to reduce conduction loss and improve light-load efficiency.

Use Value: Fast t_rr (5.6 ns) and low Q_rr (8.7 nC) minimize shoot-through risk and recovery loss, boosting efficiency by 2.1% at 500 mA load.

H-Bridge Motor Driver

USB-C Power Delivery Switch

Use Scenario: Bidirectional 12 V brushed DC motor control in robotic joint actuators.

IC Role / Device Role / Timing Role: One quadrant of half-bridge output stage, driven by complementary PWM signals.

Use Value: Low Q_gd/Q_g ratio (0.24) ensures clean turn-off even with 50 V/ns dV/dt across drain, preventing unintended turn-on.

Use Scenario: 20 V/5 A power path switch in USB-C PD sink applications with overvoltage protection.

IC Role / Device Role / Timing Role: Main pass transistor controlling VBUS connection between connector and system input capacitor.

Use Value: 30 V rating and 150 °C T_J(max) support robust operation during 20 V ±10% transients and sustained 5 A loads without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3025LSD-13	R_DS(ON) = 25 mΩ @ 10 V (lower), but Q_g = 7.5 nC (higher); TSOP-6 package with identical pinout.	Better conduction loss at high V_GS, but higher switching loss limits use in >1 MHz designs.	Select DMN3025LSD-13 only if gate drive voltage ≥10 V and frequency <500 kHz.
Si2302DDS-T1-GE3	R_DS(ON) = 60 mΩ @ 4.5 V (higher); Q_g = 3.5 nC (lower); same TSOP-6 footprint but different pin mapping (G-S-D vs G-S-D-D-D-S).	Lower gate charge benefits ultra-low-power wake-up circuits, but higher R_DS(ON) increases conduction loss in 5 A applications.	Si2302DDS-T1-GE3 is viable only for ≤3 A loads where gate drive is constrained to <1 mA peak.

Compared with AO6424, DMN3025LSD-13 offers lower R_DS(ON) but higher Q_g, making it less suitable for high-frequency PWM; Si2302DDS-T1-GE3 has inferior 4.5 V R_DS(ON) and non-identical pinout, requiring PCB redesign-neither is a drop-in replacement.

Availability

AO6424 is available at Aetrix Electronics and suitable for industrial motor drives, USB-C power delivery systems, and compact DC-DC converters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for AO6424 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO6424 belongs to AOS' logic-level trench MOSFET product line, engineered specifically for space-constrained, high-efficiency load switching and synchronous rectification in 5–24 V systems.

FAQ

What is the maximum continuous drain current rating for AO6424 at 70°C ambient temperature?

The AO6424 supports 4 A continuous drain current at T_A = 70°C, derated from 5 A at 25°C per its absolute maximum ratings table. This reflects thermal limitation due to R_θJA = 130 °C/W and T_J(max) = 150 °C. At 70°C ambient, the allowable power dissipation drops to 2.46 W, corresponding to 4 A through R_DS(ON) ≈ 38 mΩ. Derating curves in Figure 4 confirm this linear relationship.

Does AO6424 support 3.3 V logic-level gate drive?

The AO6424 has a gate threshold voltage (V_GS(th)) of 1.5–2.5 V, enabling turn-on with 3.3 V logic, but full enhancement requires V_GS ≥ 4.5 V to achieve R_DS(ON) ≤ 50 mΩ. At 3.3 V, R_DS(ON) rises to ~85 mΩ (per Figure 5 extrapolation), increasing conduction loss significantly. For reliable 3.3 V operation, verify actual I_D and T_J in final layout using thermal simulation.

What is the body diode forward voltage (V_SD) of AO6424 at 1 A and 25°C?

The AO6424 body diode forward voltage is 0.78–1.0 V at I_S = 1 A and T_J = 25°C, as specified in the "Diode Forward Voltage" row of the Electrical Characteristics table. This value is measured with V_GS = 0 V and reflects typical conduction loss when used in asynchronous rectification or freewheeling paths. Temperature rise increases V_SD slightly, reaching ~0.85 V at 125°C.

Can AO6424 be used in parallel configurations for higher current handling?

Yes, AO6424 can be paralleled due to its positive temperature coefficient of R_DS(ON) (Figure 4 shows normalized R_DS(ON) rising with junction temperature), promoting current sharing. However, layout symmetry-matched gate trace lengths, shared source return paths, and equal thermal exposure-is essential. Gate resistors ≥1 Ω per device are recommended to dampen oscillation. Parallel use beyond two devices requires empirical validation of thermal coupling.

What is the maximum safe operating area (SOA) limit for single-pulse operation of AO6424?

The AO6424 SOA curve (Figure 9) defines a single-pulse limit of 25 A at 10 V for 10 ms, decreasing to 5 A at 30 V for the same duration. At DC, conduction is limited by R_DS(ON) and thermal resistance. The SOA boundary is R_DS(ON)-limited below 10 V and voltage-limited above 20 V. Pulse testing must respect T_J ≤ 150°C and avoid secondary breakdown-verified via the published SOA graph with logarithmic time scaling.

AO6424 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: SC-74, SOT-457

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 31mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 310 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.25W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-TSOP

AO6424 FAQ

1.How can I place an order for AO6424 through Aetrix?

Please submit a Request for Quotation (RFQ) for AO6424 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO6424 reliable?

The price and inventory of AO6424 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO6424 is usually 5 days.

3.What payment methods are accepted for AO6424?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO6424 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO6424?

AO6424 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO6424 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO6424?

For technical support, including AO6424 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO6424 requirements.

6.How does Aetrix verify that AO6424 is sourced from the original manufacturer or authorized distributors?

All AO6424 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO6424 meets industry standards.

7.What is the process for return or replacement of AO6424?

All AO6424 units undergo pre-shipment inspection (PSI). If there is an issue with AO6424, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO6424 part is unused and in its original packaging.

Return procedure for AO6424:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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