Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Alpha & Omega Semiconductor Inc. AO7407

Part No.:
AO7407
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
SC-70, SOT-323
Datasheet:
AetrixAO7407.pdf
Description:
MOSFET P-CH 20V 1.2A SC70-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,201

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

AO7407 from Alpha & Omega Semiconductor is a 20V P-Channel MOSFET using advanced trench technology, optimized for low-voltage load switching and PWM control with RDS(ON) < 135 mΩ at VGS = −4.5 V, 1.2 A continuous drain current, and 1.8 V logic-level gate drive capability. It operates as a high-side or low-side switch in portable power management circuits.

For engineers reviewing the AO7407 datasheet, pinout, applications, or equivalent options, key selection criteria include its 20 V VDS, sub-2.5 V gate threshold, SC-70 package thermal performance, and body diode recovery characteristics for synchronous buck or battery protection designs.

Technical Context

The AO7407 implements a trench-gate P-channel structure enabling enhanced channel density and reduced specific on-resistance. Its gate threshold voltage (−0.4 to −1.0 V) ensures reliable turn-on with 1.8–2.5 V microcontroller outputs, while low Qg (8.5–11 nC) supports high-frequency PWM operation up to several hundred kHz.

Thermal design relies on junction-to-lead resistance of 0.63 °C/W and junction-to-ambient rating of 220 °C/W (1 in² FR-4, 2 oz Cu), with SOA limited by RDS(ON) at DC and pulse width at higher currents. The integrated body diode exhibits trr = 37–49 ns and Qrr = 27 nC under IF = −1.2 A, dI/dt = 100 A/μs conditions.

Key Specifications

ParameterValue and Actual Design Meaning
VDS−20 V maximum - supports rail voltages up to 16 V with 20 % safety margin for transients
ID (continuous)−1.2 A at TA = 25 °C - suitable for low-power load switching in space-constrained applications
RDS(ON) @ VGS = −4.5 V< 135 mΩ - enables < 160 mW conduction loss at 1.2 A, critical for thermally limited SC-70 layouts
VGS(th)−0.4 to −1.0 V - guarantees full enhancement with 1.8 V logic drivers without level-shifting
Qg8.5–11 nC - allows efficient 500 kHz+ PWM switching with moderate gate driver strength
trr / Qrr37–49 ns / 27 nC - defines minimum dead-time requirements in synchronous rectification
PD (TA = 25 °C)0.4 W - sets absolute power limit before thermal derating begins in standard PCB mounting

Pinout & Package

AO7407 is housed in an SC-70 (SOT-323) surface-mount package with three terminals: Drain (D), Gate (G), and Source (S). The package measures 2.0 × 2.1 × 0.9 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain)Main current path input/output terminalConnected to higher-potential rail in high-side switch or load return in low-side configuration
G (Gate)Control electrode for channel modulationAccepts logic-level signals down to 1.8 V; requires no external level shifter for 3.3 V MCU interfaces
S (Source)Reference node for gate drive and current returnBiased to system ground (low-side) or supply rail (high-side); body diode anode connects here

Key Features

FeatureDesign Value
Logic-level gate driveOperates fully enhanced at VGS = −1.8 V, eliminating need for gate boosters in 1.8–2.5 V systems
Low RDS(ON) at low VGS< 220 mΩ at VGS = −1.8 V - maintains efficiency in battery-powered devices with weak gate drive
Fast body diode recoverytrr = 37–49 ns - reduces switching losses and EMI in synchronous buck converters
SC-70 thermal performanceRθJL = 0.63 °C/W - enables localized heat extraction via PCB copper pour under exposed pad (if present)
Low gate chargeQg = 8.5–11 nC - minimizes driver power consumption and propagation delay in high-frequency control loops

Applications

USB Port Power SwitchingLi-ion Battery Protection

Use Scenario: Controlling 5 V USB VBUS delivery to peripherals with overcurrent and short-circuit response.

IC Role / Device Role / Timing Role: High-side load switch managing power path between source and downstream device.

Use Value: Low RDS(ON) limits voltage drop across AO7407 during 1.2 A peak loads, preserving bus regulation; fast turn-off prevents fault propagation.

Use Scenario: Isolating cell stack from charging circuitry during overvoltage or overtemperature events.

IC Role / Device Role / Timing Role: Reverse-polarity and discharge path switch in protection IC-controlled FET array.

Use Value: Sub-1 V gate threshold ensures reliable activation by analog protection comparators; SC-70 footprint saves board area in compact battery packs.

White LED Dimming DriverLow-Voltage Logic-Level Interface

Use Scenario: PWM dimming of 3–4 V white LEDs in wearables and IoT sensors powered by single-cell Li-ion.

IC Role / Device Role / Timing Role: Low-side current sink modulating LED current at 1–10 kHz.

Use Value: RDS(ON) < 170 mΩ at VGS = −2.5 V ensures minimal dropout and thermal rise at 1 A LED current.

Use Scenario: Level-shifting I/O between 1.8 V FPGA banks and 3.3 V peripheral buses.

IC Role / Device Role / Timing Role: Bidirectional passive switch enabling voltage domain translation without active logic.

Use Value: Symmetrical VGS(th) and low Ciss (560–745 pF) preserve signal integrity up to 10 MHz with minimal propagation skew.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-Channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
Si2301DDSVDS = −20 V, RDS(ON) = 115 mΩ @ −4.5 V, Qg = 5.2 nC - lower gate charge but tighter RDS(ON) toleranceHigher switching efficiency in >1 MHz DC-DC; less margin for VGS variation at 1.8 VPrefer Si2301DDS when gate drive is stable and layout prioritizes EMI reduction over worst-case VGS margin
DMG1012UWVDS = −20 V, RDS(ON) = 150 mΩ @ −4.5 V, Qg = 6.5 nC - higher RDS(ON) but better SOA pulse ratingMore robust under repetitive avalanche stress in motor drive flyback pathsChoose DMG1012UW where unclamped inductive switching occurs frequently and thermal cycling is severe

Compared with Si2301DDS and DMG1012UW, the AO7407 delivers balanced trade-offs: wider VGS(th) range for margin against gate noise, moderate Qg for general-purpose PWM, and proven SC-70 reliability in consumer battery applications - making it optimal for cost-sensitive, thermally constrained designs requiring guaranteed 1.8 V turn-on.

Availability

AO7407 is available at Aetrix Electronics and suitable for USB power delivery, Li-ion battery protection, white LED dimming, and low-voltage logic interface applications requiring stable component supply and consistent SC-70 packaging.

Supply support for AO7407 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AO7407 belongs to AOS's logic-level P-Channel trench MOSFET product line, engineered specifically for space-constrained, low-voltage load switching where gate drive headroom is limited and thermal dissipation must be minimized.

FAQ

What is the maximum continuous drain current for AO7407 at 70°C ambient temperature?

The AO7407 supports −1.0 A continuous drain current at TA = 70°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SC-70 package under still-air conditions. At higher board copper coverage or forced airflow, the AO7407 may sustain higher current, but design validation must confirm junction temperature remains below 150°C. Always reference the SOA curve in Figure 9 of the AO7407 datasheet for pulse-width-dependent limits.

Does AO7407 have a built-in body diode, and what are its key parameters?

Yes, the AO7407 integrates a parasitic body diode with forward voltage VSD = −0.7 to −1.0 V at IS = −1 A and reverse recovery time trr = 37–49 ns at dI/dt = 100 A/μs. These values are measured under standardized test conditions and define the diode's conduction loss and switching behavior in synchronous rectifier or flyback topologies. The AO7407 body diode is not rated for avalanche energy and should not be used in unclamped inductive switching without external clamping.

Can AO7407 be used as a high-side switch with a 3.3 V microcontroller GPIO?

Yes, the AO7407 can function as a high-side switch driven directly by a 3.3 V microcontroller GPIO when configured with appropriate level-referenced gate control. Since it is a P-Channel device, the gate must be pulled low relative to the source (i.e., VGS ≤ −1.8 V) to turn on. A simple resistor divider or dedicated high-side driver ensures proper VGS swing. The AO7407's −0.4 to −1.0 V VGS(th) guarantees strong enhancement even with marginal gate drive, making it suitable for such implementations.

What is the thermal resistance from junction to ambient (RθJA) for AO7407 on a standard PCB?

The AO7407 has a typical RθJA of 220 °C/W when mounted on a 1 in² FR-4 board with 2 oz copper in still air, per the manufacturer's test condition. This value assumes no additional thermal vias or heatsinking. In practice, adding thermal vias under the exposed pad (if present) or increasing copper area can reduce RθJA significantly. The AO7407 datasheet also specifies RθJL = 0.63 °C/W, indicating efficient heat transfer to the PCB lead frame - a key advantage for compact layouts.

Is AO7407 RoHS compliant and halogen-free?

Yes, the AO7407 is RoHS compliant and halogen-free, meeting JEDEC J-STD-609 Category 1 (Br, Cl < 900 ppm) and EU Directive 2011/65/EU requirements. This compliance is confirmed in AOS's official product change notices and material declarations. The AO7407 is suitable for use in consumer, industrial, and medical electronics where environmental regulations apply, and no exemptions are required for its standard packaging or process flow.

AO7407 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
SC-70, SOT-323
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
1.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
135mOhm @ 1.2A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.2 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
540 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
630mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-70-3

AO7407 FAQ

1.How can I place an order for AO7407 through Aetrix?

Please submit a Request for Quotation (RFQ) for AO7407 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AO7407 reliable?

The price and inventory of AO7407 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO7407 is usually 5 days.

3.What payment methods are accepted for AO7407?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO7407 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AO7407?

AO7407 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AO7407 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AO7407?

For technical support, including AO7407 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO7407 requirements.

6.How does Aetrix verify that AO7407 is sourced from the original manufacturer or authorized distributors?

All AO7407 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO7407 meets industry standards.

7.What is the process for return or replacement of AO7407?

All AO7407 units undergo pre-shipment inspection (PSI). If there is an issue with AO7407, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AO7407 part is unused and in its original packaging.

Return procedure for AO7407:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

AO7407 Tags

  • AO7407
  • AO7407 PDF
  • AO7407 Datasheet
  • AO7407 Specifications
  • AO7407 Images
  • Alpha & Omega Semiconductor Inc.
  • Alpha & Omega Semiconductor Inc. AO7407
  • Buy AO7407
  • AO7407 Price
  • AO7407 Distributor
  • AO7407 Supplier
  • AO7407 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER