Alpha & Omega Semiconductor Inc. AO7411

Overview

AO7411 from Alpha & Omega Semiconductor is a 30V P-Channel enhancement-mode MOSFET in SOT-363 (SC-70-6L) package, rated for -1.4A continuous drain current at V_GS = −10V, with R_DS(ON) < 115 mΩ at −10V and < 140 mΩ at −4.5V, designed for low-voltage load switching in portable power management circuits.

For engineers reviewing the AO7411 datasheet, pinout, applications, or equivalent options, key selection criteria include verified gate-threshold voltage (−0.6 to −1.4 V), body-diode forward voltage (−0.78 V), total gate charge (5.9–7.2 nC), junction-to-ambient thermal resistance (425 °C/W), and unclamped inductive switching capability.

Technical Context

The AO7411 operates as a single P-channel switch with trench-gate structure enabling logic-level drive down to V_GS = −2.5V, supporting direct interface with 3.3V microcontroller GPIOs. Its low R_DS(ON) and 315 pF input capacitance optimize efficiency in high-frequency DC-DC converter synchronous rectification and battery protection paths.

Thermal performance is defined by junction-to-lead resistance of 280 °C/W and maximum junction temperature of 150 °C; safe operating area (SOA) is validated up to 10 ms pulses at −10V V_GS, with body-diode reverse recovery time of 11.5–15 ns under IF = −1.4 A, dI/dt = 100 A/μs conditions.

Key Specifications

Pinout & Package

SOT-363 (SC-70-6L) surface-mount package with 1.3 mm × 2.1 mm footprint, 0.95 mm height, and lead-free matte-tin plating. Thermal pad not present; power dissipation relies on PCB copper area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with AO7405 and DMG1012UVT, the AO7411 delivers the lowest R_DS(ON) at −4.5V among SOT-363 P-channel MOSFETs, making it optimal for space-constrained 1.2 A load switches where thermal headroom is limited and 3.3V logic compatibility is mandatory.

Availability

AO7411 is available at Aetrix Electronics and suitable for battery protection circuits, USB power delivery modules, and IoT sensor node power gating requiring stable component supply across industrial and consumer production programs.

Supply support for AO7411 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AO7411 belongs to AOS's low-voltage logic-level P-channel MOSFET product line, engineered specifically for compact, battery-powered systems demanding minimal gate-drive voltage and ultra-low R_DS(ON) in sub-2 mm² packages.

FAQ

What is the maximum continuous drain current for AO7411 at 70°C ambient temperature?

The AO7411 supports −1.0 A continuous drain current at T_A = 70°C with proper PCB copper area. This derating reflects thermal limits imposed by its 425 °C/W junction-to-ambient resistance and 150 °C maximum junction temperature. At 25°C ambient, the AO7411 handles −1.4 A continuously. Derating curves confirm linear reduction between these points, and actual performance depends on board layout and airflow.

Does AO7411 have a built-in ESD protection diode on the gate?

The AO7411 does not integrate gate-oxide ESD protection diodes; its gate withstands ±12 V absolute maximum V_GS, per AOS specification. External gate-protection components-such as series resistors and Zener clamps-are recommended in environments with high static discharge risk. The device's gate oxide thickness and trench process inherently provide moderate robustness, but system-level ESD design remains the responsibility of the end user.

Can AO7411 be used in a high-side switch configuration with 5V gate drive?

No-AO7411 is a P-channel MOSFET requiring negative gate-to-source voltage for conduction; applying +5V to the gate relative to source would keep it fully off. For high-side switching with 5V logic, the gate must be pulled down toward ground (e.g., using an N-channel driver stage) to achieve V_GS ≈ −5V. Direct 5V gate-source bias is incompatible with P-channel operation and will not activate the AO7411.

What is the typical body-diode reverse recovery charge (Q_rr) for AO7411?

The AO7411 has a typical body-diode reverse recovery charge Q_rr of 4.5 nC, measured under IF = −1.4 A and dI/dt = 100 A/μs conditions. This value directly impacts switching losses and voltage overshoot in synchronous rectifier and H-bridge applications. Lower Q_rr contributes to reduced EMI and improved efficiency compared to general-purpose P-channel MOSFETs with Q_rr > 6 nC.

Is AO7411 RoHS compliant and halogen-free?

Yes, the AO7411 is RoHS compliant and halogen-free per AOS's material declarations. It meets JEDEC J-STD-609 Category 1 for bromine and chlorine content (< 900 ppm) and satisfies EU Directive 2011/65/EU. The SOT-363 package uses matte-tin lead finish, and full compliance documentation-including test reports and substance declarations-is available through AOS's official portal and authorized distributors.