Alpha & Omega Semiconductor Inc. AO7417
- Part No.:
- AO7417
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
AO7417.pdf
- Description:
- MOSFET P-CH 20V 1.9A SC70-6
- Quantity:
- Payment:

- Shipping:

Inventory:3,249
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
AO7417 from Alpha & Omega Semiconductor is a 20V P-Channel MOSFET in SOT-363 (SC-70-6) package, featuring RDS(ON) < 80 mΩ at VGS = −4.5 V, gate threshold voltage of −0.5 to −1.0 V, and operation down to 1.5 V gate drive. It delivers −2 A continuous drain current and is optimized for low-voltage buck converter high-side switching.
For engineers reviewing the AO7417 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based low-RDS(ON) performance at ultra-low gate voltages, thermal resistance (RθJA = 160 °C/W), and compact 6-pin SC-70 footprint suitable for space-constrained DC-DC power stages.
Technical Context
The AO7417 employs advanced trench-gate MOSFET technology to achieve enhanced conduction efficiency and fast switching with minimal gate charge (Qg = 8.5–11 nC). Its −0.65 V typical gate threshold enables reliable turn-on with 1.8 V logic-level signals, supporting direct interface with low-voltage microcontrollers.
Designed for synchronous rectification and high-side switching in buck converters, the device integrates a body diode with reverse recovery time (trr) of 37–49 ns and Qrr = 27 nC, enabling efficient freewheeling without external Schottky diodes in many applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage for 12 V input rail designs with margin. |
| RDS(ON) @ VGS = −4.5 V | < 80 mΩ - Enables ≤ 320 mW conduction loss at −2 A, critical for thermally constrained layouts. |
| Qg | 8.5–11 nC - Low total gate charge reduces driver power and switching losses in 500 kHz–1 MHz converters. |
| tr/tf | 36 ns / 56 ns - Fast edge rates support high-frequency operation while limiting EMI generation. |
| RθJA | 160 °C/W - Measured on 1 in² 2 oz copper FR-4; defines maximum power dissipation (0.4 W) at TA = 70 °C. |
| VGS(th) | −0.5 to −1.0 V - Ensures robust turn-on with 1.8 V GPIOs and eliminates need for level-shifting circuitry. |
Pinout & Package
Package: SC-70-6 (SOT-363), 1.6 mm × 2.9 mm × 1.1 mm, surface-mount, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level gate drive down to 1.5 V; requires no external pull-down for default-off behavior. |
| 2 (S) | Source | Reference node for gate drive; connected to output rail in high-side switch configuration. |
| 3 (D) | Drain | High-side switch output; connects to input rail (e.g., 12 V); carries full load current during conduction. |
| 4 (D) | Drain | Internally paralleled with Pin 3 to reduce package inductance and improve current sharing in dual-drain layout. |
| 5 (S) | Source | Second source terminal; tied to Pin 2 externally to minimize source inductance and stabilize switching. |
| 6 (G) | Gate | Redundant gate connection; used for Kelvin gate routing or improved gate loop inductance control. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate threshold | VGS(th) = −0.65 V typ supports direct 1.8 V MCU GPIO drive without level shifters. |
| Trench MOSFET architecture | Delivers <80 mΩ RDS(ON) at −4.5 V and <125 mΩ at −1.8 V, enabling high-efficiency low-VIN conversion. |
| Dual-drain/dual-source package | SOT-363 layout minimizes parasitic inductance-critical for stable high-frequency switching and reduced ringing. |
| Low Qgd/Qg ratio | Qgd = 2.1 nC / Qg = 10 nC ≈ 0.21 improves hard-switching immunity and reduces Miller-induced shoot-through risk. |
Applications
| Buck Converter High-Side Switch | Load Switch for Portable Devices |
|---|---|
|
Use Scenario: 12 V-to-3.3 V point-of-load regulator in battery-powered IoT sensor nodes. IC Role / Device Role / Timing Role: High-side synchronous switch controlling energy transfer into output inductor; operates at 1 MHz PWM frequency. Use Value: RDS(ON) < 80 mΩ limits I²R loss to ≤320 mW at 2 A, enabling passive cooling in sealed enclosures. |
Use Scenario: USB-C port power enable/disable in ultrabooks with 5 V/3 A delivery capability. IC Role / Device Role / Timing Role: Load switch isolating downstream circuits; controlled by system PMIC via 1.8 V GPIO. Use Value: −0.65 V VGS(th) ensures full enhancement at 1.8 V logic, eliminating external gate driver and saving PCB area. |
| Hot-Swap Controller Back-End FET | Reverse Polarity Protection |
|
Use Scenario: Inrush current limiting for 5 V backplane modules inserted under power. IC Role / Device Role / Timing Role: Series pass element in active hot-swap circuit; driven by dedicated controller IC. Use Value: Low Qg (10 nC) allows fast, controlled turn-on ramp to limit dI/dt and suppress voltage transients. |
Use Scenario: Input protection for industrial 24 V sensors exposed to field wiring errors. IC Role / Device Role / Timing Role: Reverse-connected P-channel MOSFET blocking reverse current flow when supply polarity is inverted. Use Value: −20 V VDS rating provides 2× margin over 24 V nominal rail, ensuring long-term reliability under surge conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si2301DS-T1-GE3 | RDS(ON) = 90 mΩ @ −4.5 V; VGS(th) = −0.7 V min; SOT-23-3 package (single drain/source). | Lacks dual-drain layout and Kelvin gate; higher RDS(ON) increases conduction loss by ~12% at 2 A. | Preferred where board space is extremely limited and dual-source routing is not required. |
| DMG1012T-7 | RDS(ON) = 85 mΩ @ −4.5 V; VGS(th) = −0.5 V min; SOT-563 (same pin count but different pinout). | Non-compatible pinout (G-S-D vs AO7417's G-S-D-D-S-G); requires PCB redesign. | Consider only if thermal performance (RθJA = 150 °C/W) outweighs layout impact. |
Compared with Si2301DS-T1-GE3 and DMG1012T-7, the AO7417 offers lower RDS(ON), superior gate-drive compatibility with 1.8 V systems, and a dual-drain/dual-source layout that reduces switching noise-making it optimal for high-frequency, low-noise buck converters where layout integrity is critical.
Availability
AO7417 is available at Aetrix Electronics and suitable for buck converters, portable load switches, hot-swap controllers, and reverse polarity protection circuits requiring stable component supply and consistent parametric performance across production lots.
Supply support for AO7417 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AO7417 belongs to AOS' low-voltage logic-level P-channel MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion in space- and power-constrained applications.
FAQ
What is the maximum continuous drain current for the AO7417 at 70°C ambient temperature?
The AO7417 supports −2 A continuous drain current at TA = 70°C, based on its 0.4 W power dissipation rating and 160 °C/W junction-to-ambient thermal resistance. This rating assumes operation on a standard 1 in² 2 oz copper PCB in still air; actual current capability may increase with enhanced heatsinking or forced airflow. The AO7417 datasheet specifies this value under steady-state conditions with VGS = −4.5 V.
Can the AO7417 be driven directly by a 1.8 V microcontroller GPIO without a level shifter?
Yes-the AO7417 has a typical gate threshold voltage of −0.65 V and guaranteed turn-on at VGS = −1.0 V, making it fully compatible with 1.8 V logic outputs. At VGS = −1.8 V, RDS(ON) remains < 125 mΩ, delivering usable conduction performance. This eliminates external level-shifting components in the AO7417 gate drive path.
What is the significance of the dual-drain and dual-source pins on the AO7417?
The AO7417's SOT-363 package features two drain pins (3 and 4) and two source pins (2 and 5) to reduce package parasitic inductance and improve current distribution. This layout lowers switching ringing, enhances stability in high-frequency buck converters, and simplifies Kelvin source routing for accurate gate drive referencing-key advantages not available in standard SOT-23 or SOT-563 MOSFETs like the AO7417 alternatives.
Does the AO7417 include an integrated body diode, and what are its recovery characteristics?
Yes-the AO7417 integrates a monolithic body diode with forward voltage VSD = −0.7 to −1.0 V at −1 A. Its reverse recovery time trr is 37–49 ns and Qrr = 27 nC under IF = −2 A and dI/dt = 100 A/μs conditions. These values support efficient freewheeling in synchronous buck topologies without requiring external Schottky diodes.
How does the AO7417's gate charge compare to similar P-channel MOSFETs, and why does it matter?
The AO7417 has Qg = 8.5–11 nC and Qgd/Qg ≈ 0.21-lower than many competing devices (e.g., Si2301DS: Qg = 12 nC, Qgd/Qg ≈ 0.27). This reduces gate driver power consumption and improves switching speed consistency, especially important in 1 MHz+ buck converters where gate drive losses scale linearly with Qg and frequency.
AO7417 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 1.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 11 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 745 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 570mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-70-6
AO7417 FAQ
1.How can I place an order for AO7417 through Aetrix?
Please submit a Request for Quotation (RFQ) for AO7417 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AO7417 reliable?
The price and inventory of AO7417 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AO7417 is usually 5 days.
3.What payment methods are accepted for AO7417?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AO7417 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AO7417?
AO7417 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AO7417 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AO7417?
For technical support, including AO7417 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AO7417 requirements.
6.How does Aetrix verify that AO7417 is sourced from the original manufacturer or authorized distributors?
All AO7417 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AO7417 meets industry standards.
7.What is the process for return or replacement of AO7417?
All AO7417 units undergo pre-shipment inspection (PSI). If there is an issue with AO7417, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AO7417 part is unused and in its original packaging.
Return procedure for AO7417:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AO7417 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…

