Alpha & Omega Semiconductor Inc. AOB160A60L

Overview

AOB160A60L from Alpha & Omega Semiconductor is a 600 V, 96 A N-channel MOSFET in TO-263 (D2PAK) package, featuring R_DS(ON) ≤ 0.16 Ω at V_GS = 10 V, Q_g = 46 nC, and 100% UIS-tested ruggedness. It serves as a primary switching device in high-efficiency SMPS topologies including PFC, flyback, and LLC converters.

For engineers reviewing the AOB160A60L datasheet, pinout, applications, or equivalent options, key selection criteria include its 700 V avalanche-rated V_DS, low 0.5 °C/W R_θJC, enhanced body diode with t_rr = 387 ns, and αMOS5™-optimized EMI performance for industrial power supplies.

Technical Context

This MOSFET employs αMOS5™ technology to achieve low conduction loss and controlled switching behavior: R_DS(ON) = 0.14–0.16 Ω (V_GS = 10 V), Q_gd/Q_gs ratio of ~0.82, and C_iss/C_oss = 2340/62 pF - enabling fast turn-on while suppressing voltage overshoot during hard switching.

Its thermal design supports high-power density operation: R_θJC = 0.5 °C/W, maximum T_J = 150 °C, and SOA rated up to 100 A at V_DS = 10 V (DC), validated under unclamped inductive switching (UIS) and repetitive avalanche conditions per JEDEC JESD24-11.

Key Specifications

Pinout & Package

AOB160A60L uses the TO-263 (D2PAK) surface-mount package with exposed drain pad for thermal and electrical connection. The three terminals are arranged in G–D–S order (left-to-right when viewed from top with marking side up and tab facing away).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STP160N6F6 and IXFH16N60X3, AOB160A60L delivers superior thermal performance (R_θJC = 0.5 °C/W) and balanced switching-conduction trade-off (Q_g/R_DS(ON) = 287), making it optimal for space-constrained, high-efficiency 100–300 kHz power stages requiring both low loss and robust avalanche capability.

Availability

AOB160A60L is available at Aetrix Electronics and suitable for server power supplies, industrial flyback converters, microinverters, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for AOB160A60L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOB160A60L belongs to AOS' αMOS5™ high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability AC/DC and DC/DC conversion in demanding industrial and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for AOB160A60L at case temperature of 100°C?

The AOB160A60L supports 24 A continuous drain current at T_C = 100°C, derated from its 96 A rating at T_C = 25°C per the current de-rating curve (Figure 10). This value assumes proper PCB copper area for thermal conduction and accounts for R_DS(ON) increase with temperature. The AOB160A60L's 0.5 °C/W R_θJC enables this performance in compact surface-mount layouts.

Does AOB160A60L have avalanche capability, and is it production-tested?

Yes, the AOB160A60L is 100% unclamped inductive switching (UIS) tested per JEDEC JESD24-11, guaranteeing single-pulse avalanche energy of 34.7 mJ at T_J = 25°C. Its BVDSS temperature coefficient of 0.53 V/°C and rated V_DS = 700 V ensure robustness against transient overvoltages in real-world power circuits. This testing applies directly to the AOB160A60L, not just the family.

What is the gate threshold voltage range for AOB160A60L, and how does it affect drive requirements?

The AOB160A60L has a gate threshold voltage (V_GS(th)) range of 2.4–3.6 V at T_J = 25°C, ensuring reliable turn-on with standard 5 V or 10 V gate drivers. Its typical g_FS = 20 S provides strong transconductance for fast switching, and the 5.4 Ω internal gate resistance stabilizes turn-on dynamics. This V_GS(th) window makes the AOB160A60L compatible with both logic-level and standard gate drive ICs without external level shifting.

How does the body diode performance of AOB160A60L compare to standard MOSFETs in flyback or LLC applications?

The AOB160A60L features an enhanced body diode with t_rr = 387 ns and Q_rr = 7.3 mC at I_F = 12 A, dI/dt = 100 A/ms, and V_DS = 400 V - significantly faster and more robust than generic 600 V MOSFETs. This reduces switching losses and voltage spikes during freewheeling, especially critical in flyback snubberless designs and LLC half-bridge dead-time conduction. The AOB160A60L's body diode is explicitly characterized and qualified for these roles.

Is AOB160A60L RoHS-compliant and halogen-free, and what is its packaging format?

Yes, the AOB160A60L is RoHS-compliant and halogen-free, as confirmed in AOS' official documentation (Rev 2.1, April 2024). It is supplied in tape-and-reel format - distinct from the tube-packaged AOT160A60L and AOTF160A60L variants. The TO-263 Green package meets JEDEC MS-013 standards and supports lead-free reflow soldering profiles up to 260°C peak temperature.