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Alpha & Omega Semiconductor Inc. AOB4184

Part No.:
AOB4184
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAOB4184.pdf
Description:
MOSFET N-CH 40V 12A/50A TO263
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,244

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Product details

Overview

AOB4184 from Alpha & Omega Semiconductor is a 40 V, 50 A N-channel MOSFET in D2PAK (TO-263) package, featuring RDS(ON) < 10 mΩ at VGS = 10 V and < 13 mΩ at VGS = 4.5 V, 100% UIS tested, and optimized for high-current DC-DC converter and motor control applications.

For engineers reviewing the AOB4184 datasheet, pinout, applications, or equivalent options, key selection considerations include its low gate charge (Qg = 27.2 nC @ 10 V), robust avalanche capability (EAS = 61 mJ), thermal resistance (RθJC = 3 °C/W), and body diode recovery performance (trr = 19 ns, Qrr = 59 nC).

Technical Context

The AOB4184 employs trench-gate MOSFET architecture with optimized cell pitch and deep-trench doping to achieve low RDS(ON) while maintaining fast switching and rugged unclamped inductive switching (UIS) performance. Its gate threshold voltage (VGS(th) = 1.7–3.0 V) ensures reliable turn-on with standard logic-level drivers.

Thermal design leverages the D2PAK package's low junction-to-case resistance (RθJC = 3 °C/W) and supports continuous operation up to TJ = 175 °C. The device's 100% Rg testing ensures consistent gate drive timing and EMI behavior across production lots.

Key Specifications

ParameterValue and Actual Design Meaning
VDS40 V - Maximum blocking voltage compatible with 36 V nominal bus systems and 12/24 V automotive auxiliary rails.
ID (TC = 25°C)50 A - Continuous conduction capability enabling high-power synchronous rectification without parallel devices.
RDS(ON) @ 10 V< 10 mΩ - Reduces conduction loss to ≤ 25 W at 50 A, critical for efficiency in high-current POL converters.
Qg @ 10 V27.2 nC - Enables fast switching with moderate gate driver strength (e.g., 1–2 A peak), minimizing switching loss in 100–500 kHz designs.
EAS61 mJ - Confirmed single-pulse avalanche energy rating supports reliable operation under inductive fault conditions without snubbers.
trr / Qrr19 ns / 59 nC - Fast, low-charge body diode enables efficient synchronous FET operation and reduces cross-conduction losses.
RθJC3 °C/W - Allows direct heatsink mounting to sustain >40 W power dissipation with ≤ 120 °C case temperature rise above ambient.

Pinout & Package

D2PAK (TO-263) package with exposed drain pad on bottom side for thermal and electrical connection; three terminals: Drain (D), Gate (G), Source (S). Package outline conforms to JEDEC MO-211AB.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain)Main current-carrying terminal, connected to internal die substrateExposed metal pad on bottom surface serves as primary thermal path and high-current return node; requires soldered thermal pad area ≥ 100 mm².
G (Gate)Control electrode for channel formationLow-impedance input (Rg = 3.5 Ω typical) requiring <100 pF gate loop inductance to avoid oscillation during hard switching.
S (Source)Reference node for gate drive and current sensingConnected to PCB ground plane; must be routed with low-inductance path to minimize VGS noise during dI/dt transients.

Key Features

FeatureDesign Value
Advanced trench processEnables sub-10 mΩ RDS(ON) at 40 V while maintaining >106 cycle UIS reliability per JEDEC JESD22-A109.
100% UIS testedEach unit validated to withstand 61 mJ unclamped inductive energy, eliminating need for external avalanche protection in motor drive H-bridges.
Low Qgd/Qg ratioQgd = 6.4 nC / Qg = 27.2 nC → 23.5% - Improves Miller immunity and enables stable operation with high dV/dt (>50 V/ns) in half-bridge configurations.
Optimized body diodetrr = 19 ns with soft recovery (no voltage overshoot), reducing EMI and enabling zero-voltage switching (ZVS) in resonant topologies.
100% Rg testedEnsures gate resistance variation ≤ ±15%, critical for matched timing in paralleled MOSFET arrays and multi-phase VRMs.

Applications

DC-DC Synchronous Buck ConverterAutomotive Body Control Module (BCM)

Use Scenario: High-efficiency 12 V input to 1.2 V/60 A output VRM for microprocessor power delivery.

IC Role / Device Role: High-side synchronous rectifier switch operating at 300–500 kHz with forced PWM mode.

Use Value: Sub-10 mΩ RDS(ON) reduces conduction loss by >35% vs. legacy 40 V MOSFETs, enabling single-device solution without paralleling.

Use Scenario: 24 V battery-powered load switching for headlight, wiper, and seat actuator drivers.

IC Role / Device Role: Low-side power switch controlling brushed DC motors and solenoids with PWM dimming.

Use Value: 61 mJ avalanche rating eliminates external flyback diodes and suppressors, reducing BOM count and PCB area by 30%.

Industrial Motor Drive InverterServer PSU Primary-Side Switch

Use Scenario: 48 V input 3-phase inverter driving 500 W BLDC fan with space-constrained heatsink.

IC Role / Device Role: Half-bridge low-side switch handling 35 A RMS with 10 kHz PWM.

Use Value: RθJC = 3 °C/W allows direct mounting to aluminum chassis, achieving TJ < 125 °C at full load without active cooling.

Use Scenario: 380 V DC–48 V isolated LLC resonant converter primary-side switch in 1 kW server PSU.

IC Role / Device Role: Secondary-side synchronous rectifier in center-tapped configuration.

Use Value: 19 ns trr and soft recovery prevent shoot-through during ZVS transitions, improving efficiency by 0.8% at 50% load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF1404PbFRDS(ON) = 20 mΩ @ 10 V; Qg = 131 nC; RθJC = 3.3 °C/W; TO-220 packageHigher conduction loss and slower switching limit use to <200 kHz and lower-current (<30 A) applicationsSelect when cost sensitivity outweighs efficiency and thermal constraints; not suitable for D2PAK footprint replacement.
STL140N4F7AGRDS(ON) = 3.3 mΩ @ 10 V; Qg = 42 nC; DFN5x6 package; no exposed drain padLower RDS(ON) but higher Qg and inferior thermal path limits sustained power handling in high-ambient environmentsPrefer for ultra-high-efficiency, low-profile designs where board-level thermal management is highly optimized.

Compared with IRF1404PbF and STL140N4F7AG, the AOB4184 delivers optimal balance of low RDS(ON), moderate gate charge, and superior thermal performance in a widely supported D2PAK form factor-making it ideal for industrial and automotive applications demanding both efficiency and ruggedness without layout redesign.

Availability

AOB4184 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and automotive body electronics requiring stable component supply and long-term industrial lifecycle support.

Supply support for AOB4184 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOB4184 belongs to AOS's advanced trench-MOSFET product line, engineered specifically for high-current, high-efficiency power conversion in space- and thermally-constrained applications such as server VRMs and automotive ECUs.

FAQ

What is the maximum continuous drain current rating for the AOB4184 at 100°C case temperature?

The AOB4184 supports 40 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects bond-wire current limits and thermal saturation effects; operation above this value requires pulse-width limitation or enhanced heatsinking. The AOB4184 datasheet confirms this rating applies under steady-state conditions with proper PCB copper area and airflow.

Does the AOB4184 have a specified gate threshold voltage range, and how does it affect drive compatibility?

Yes, the AOB4184 has a gate threshold voltage (VGS(th)) range of 1.7 V to 3.0 V at ID = 250 µA. This ensures reliable turn-on with 3.3 V and 5 V logic-level gate drivers, while maintaining sufficient noise margin against spurious turn-on in noisy industrial environments. The AOB4184's low VGS(th) upper limit also minimizes Miller plateau duration during switching transitions.

Is the AOB4184 rated for avalanche operation, and what is its tested energy level?

Yes, the AOB4184 is 100% tested for unclamped inductive switching (UIS) with a guaranteed single-pulse avalanche energy rating of 61 mJ at TJ = 25°C. This rating is verified per JEDEC standard JESD22-A109 and enables robust operation in motor drive and relay-switching applications without external clamping components. The AOB4184's avalanche capability is integral to its qualification for automotive BCM use.

What is the typical gate charge profile of the AOB4184, and how does it influence switching loss?

The AOB4184 exhibits Qg = 27.2 nC at VGS = 10 V, with Qgs = 4.5 nC and Qgd = 6.4 nC. This low Qgd/Qg ratio (23.5%) reduces Miller-induced switching delay and improves controllability in high-dV/dt circuits. The AOB4184's gate charge enables efficient 300–500 kHz operation with standard 1–2 A peak gate drivers, directly lowering total switching loss in high-frequency POL converters.

Can the AOB4184 be used in synchronous rectification applications, and what body diode characteristics support this?

Yes, the AOB4184 is well-suited for synchronous rectification due to its fast, soft-recovery body diode: trr = 19 ns (typical), Qrr = 59 nC, and VSD = 0.72 V at IS = 1 A. These parameters minimize reverse-recovery loss and voltage overshoot during commutation, enabling high-efficiency operation in LLC and phase-shifted full-bridge topologies. The AOB4184's body diode performance is explicitly characterized in its datasheet Figures 6 and 12.

AOB4184 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
40 V
Current - Continuous Drain (Id) @ 25°C:
12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
10mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1800 pF @ 20 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

AOB4184 FAQ

1.How can I place an order for AOB4184 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOB4184 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOB4184 reliable?

The price and inventory of AOB4184 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOB4184 is usually 5 days.

3.What payment methods are accepted for AOB4184?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOB4184 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOB4184?

AOB4184 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOB4184 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOB4184?

For technical support, including AOB4184 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOB4184 requirements.

6.How does Aetrix verify that AOB4184 is sourced from the original manufacturer or authorized distributors?

All AOB4184 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOB4184 meets industry standards.

7.What is the process for return or replacement of AOB4184?

All AOB4184 units undergo pre-shipment inspection (PSI). If there is an issue with AOB4184, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOB4184 part is unused and in its original packaging.

Return procedure for AOB4184:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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