Alpha & Omega Semiconductor Inc. AOB66613L
- Part No.:
- AOB66613L
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Datasheet:
-
AOB66613L.pdf
- Description:
- MOSFET N-CH 60V 44.5A/120A TO263
- Quantity:
- Payment:

- Shipping:

Inventory:2,494
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Product details
Overview
AOB66613L from Alpha & Omega Semiconductor is a 60V, 120A N-channel Trench Power AlphaSGT™ MOSFET in TO-263 (D2PAK) package, with RDS(ON) < 2.5 mΩ at VGS = 10 V and gate charge Qg = 78–110 nC. It delivers high-frequency switching and synchronous rectification in BLDC motor drives and industrial power supplies.
For engineers reviewing the AOB66613L datasheet, pinout, applications, or equivalent options, key selection criteria include its 60V VDS, 120A ID rating at TC = 100°C, 0.48°C/W RθJC, 100% UIS-tested ruggedness, and TO-263 thermal performance for high-current DC-DC and motor control designs.
Technical Context
This MOSFET employs AlphaSGT™ trench technology to achieve low RDS(ON) and optimized gate charge × RDS(ON) figure-of-merit (FOM), enabling efficient hard-switching up to several hundred kHz. Its body diode exhibits trr = 30 ns and Qrr = 135 nC under IF = 20 A, di/dt = 500 A/μs conditions.
The device is characterized for operation across –55°C to +150°C junction temperature range, with absolute maximum VGS = ±20 V and avalanche energy rating of 346 mJ (L = 0.3 mH). Thermal design relies on its 0.48°C/W junction-to-case resistance and validated SOA up to 10 ms pulse width at TC = 25°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum blocking voltage for 48 V bus systems and industrial DC input stages |
| ID (TC = 100°C) | 120 A - Continuous drain current capability with external heatsinking at elevated case temperatures |
| RDS(ON) (VGS = 10 V) | < 2.5 mΩ - Enables <1.8 W conduction loss at 120 A, critical for high-efficiency power stages |
| Qg (10 V) | 78–110 nC - Gate drive energy requirement directly impacts driver sizing and switching loss trade-off |
| RθJC | 0.48 °C/W - Junction-to-case thermal resistance enables precise heatsink thermal budgeting |
| EAS | 346 mJ - Unclamped inductive switching ruggedness supports reliable operation in motor phase-legs |
| tr/tf | 21 ns / 13 ns - Fast switching transitions reduce overlap loss in synchronous buck and half-bridge topologies |
Pinout & Package
AOB66613L is housed in a surface-mount TO-263 (D2PAK) package with exposed drain pad for enhanced thermal dissipation. The package features three terminals: Drain (D), Gate (G), and Source (S), with Drain connected to the large copper tab on the bottom side.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main high-side current path terminal | Connected to PCB copper pour for thermal management; electrically tied to package tab |
| G (Gate) | Control input for channel conduction | Requires low-impedance drive due to Qg = 78–110 nC; sensitive to ringing without proper layout |
| S (Source) | Reference node for gate drive and current sensing | Common return for load current and gate driver ground; critical for Kelvin source routing in precision applications |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power AlphaSGT™ Technology | Enables sub-2.5 mΩ RDS(ON) at 60 V while maintaining robust short-circuit withstand time |
| 100% UIS Tested | Guarantees unclamped inductive switching survival up to 346 mJ, eliminating need for external snubbers in motor drives |
| Low Qg × RDS(ON) FOM | Optimizes trade-off between switching speed and conduction loss for high-frequency SMPS and inverters |
| RoHS and Halogen-Free Compliant | Meets IPC-1752A material declaration requirements for industrial and automotive-qualified supply chains |
| Body Diode with Low Qrr | 135 nC reverse recovery charge supports ZVS-assisted topologies and reduces diode-induced EMI |
Applications
| BLDC Motor Inverter Phase Leg | High-Current Synchronous Rectifier |
|---|---|
Use Scenario: Three-phase inverter driving 400 W–2 kW brushless DC motors in HVAC blowers and power tools. IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-step commutation, handling peak currents >100 A. Use Value: Sub-2.5 mΩ RDS(ON) and 100% UIS rating ensure thermal stability and fault resilience during rapid direction reversal and stall events. | Use Scenario: Secondary-side synchronous rectification in 48 V–54 V output, 3 kW telecom rectifiers. IC Role / Device Role / Timing Role: Replaces Schottky diodes in LLC resonant converters operating at 200–500 kHz switching frequency. Use Value: Low Qg × RDS(ON) FOM and fast tr/tf minimize total power loss while maintaining ZVS boundary conditions. |
| Industrial DC-DC Buck Converter | UPS Inverter Output Stage |
Use Scenario: 12 V–48 V input, 3.3 V/100 A output point-of-load converter for server VRMs and FPGA power delivery. IC Role / Device Role / Timing Role: High-current, low-VDS switch in multiphase buck topology with active current sharing. Use Value: 0.48°C/W RθJC allows direct mounting to cold plate, supporting >95% efficiency at full load without forced air. | Use Scenario: 400 V DC bus in-line inverter stage delivering 230 VAC/5 kVA for industrial uninterruptible power supplies. IC Role / Device Role / Timing Role: Half-bridge switching device in three-phase inverter leg, operating with 120° conduction mode. Use Value: 346 mJ EAS and 120 A ID rating enable safe operation during grid fault transients and load dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1407PbF | RDS(ON) = 4.8 mΩ @ 10 V; Qg = 120 nC; TO-220 package; RθJC = 0.75°C/W | Higher conduction loss and lower current density; requires larger heatsink for same thermal performance | Preferred where legacy TO-220 footprint compatibility is required and 60 V rating suffices |
| STL220N6F7 | RDS(ON) = 2.2 mΩ @ 10 V; Qg = 105 nC; TO-263 package; RθJC = 0.55°C/W; includes integrated gate resistor | Marginally lower RDS(ON) but higher thermal resistance; gate resistor limits dV/dt but adds layout inflexibility | Consider when simplified gate drive and marginally better conduction efficiency outweigh thermal penalty |
Compared with IRF1407PbF and STL220N6F7, the AOB66613L offers the lowest RθJC (0.48°C/W) and best FOM among 60 V TO-263 MOSFETs, making it optimal for thermally constrained, high-current synchronous rectification and motor drive applications where board space and heatsink volume are limited.
Availability
AOB66613L is available at Aetrix Electronics and suitable for BLDC motor drives, high-current synchronous rectifiers, industrial DC-DC converters, and UPS inverter output stages requiring stable component supply and long-term production continuity.
Supply support for AOB66613L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOB66613L belongs to AOS's AlphaSGT™ family-engineered for high-current, high-frequency power conversion with emphasis on RDS(ON)/Qg optimization and ruggedness in motor control and server power applications.
FAQ
What is the maximum continuous drain current rating for AOB66613L at TC = 100°C?
The AOB66613L is rated for 120 A continuous drain current at case temperature TC = 100°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal interface to maintain junction temperature ≤150°C. Derating applies above 100°C per Figure 13 in the datasheet.
Does AOB66613L have an integrated Schottky body diode?
No, the AOB66613L uses a standard parasitic body diode inherent to its planar N-channel MOSFET structure. It is not a Schottky or trench-Schottky hybrid device. Its body diode has VSD = 0.7–1.0 V and Qrr = 135 nC at IF = 20 A, di/dt = 500 A/μs-values confirmed in the Electrical Characteristics table on page 2 of the datasheet.
What is the gate threshold voltage range for AOB66613L at TJ = 25°C?
The AOB66613L has a gate threshold voltage VGS(th) of 2.3 V (min), 2.85 V (typ), and 3.5 V (max) at TJ = 25°C, as listed in the Electrical Characteristics table. At TJ = 125°C, the range shifts to 2.0–3.0 V, confirming positive temperature coefficient behavior typical of AlphaSGT™ devices.
Is AOB66613L suitable for use in zero-voltage switching (ZVS) circuits?
Yes, the AOB66613L supports ZVS operation due to its low Coss = 1500 pF and fast tr/tf (21 ns / 13 ns), which enable efficient resonant turn-on. Its Qrr = 135 nC and trr = 30 ns further reduce switching loss and voltage overshoot during body-diode commutation in LLC and phase-shifted full-bridge topologies.
What is the recommended gate resistor value for AOB66613L in a 200 kHz synchronous buck converter?
A gate resistor of 3–5 Ω is recommended for the AOB66613L in a 200 kHz synchronous buck, balancing switching loss (reduced by faster edges) and EMI/noise (controlled by moderate dV/dt). This aligns with the Rg = 0.4–1.4 Ω specification and typical gate driver output impedance; actual value must be validated with layout parasitics and driver capability per Figure 7 gate-charge curve.
AOB66613L Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 44.5A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 2.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 110 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5300 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 8.3W (Ta), 260W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-263 (D2PAK)
AOB66613L FAQ
1.How can I place an order for AOB66613L through Aetrix?
Please submit a Request for Quotation (RFQ) for AOB66613L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOB66613L reliable?
The price and inventory of AOB66613L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOB66613L is usually 5 days.
3.What payment methods are accepted for AOB66613L?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOB66613L transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOB66613L?
AOB66613L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOB66613L order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOB66613L?
For technical support, including AOB66613L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOB66613L requirements.
6.How does Aetrix verify that AOB66613L is sourced from the original manufacturer or authorized distributors?
All AOB66613L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOB66613L meets industry standards.
7.What is the process for return or replacement of AOB66613L?
All AOB66613L units undergo pre-shipment inspection (PSI). If there is an issue with AOB66613L, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOB66613L part is unused and in its original packaging.
Return procedure for AOB66613L:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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