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Alpha & Omega Semiconductor Inc. AOB66616L

Part No.:
AOB66616L
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixAOB66616L.pdf
Description:
MOSFET N-CH 60V 38.5A/140A TO263
Quantity:
Payment:
Payment
Shipping:
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Inventory:570

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Product details

Overview

AOB66616L from Alpha & Omega Semiconductor is a 60V, 140A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-current synchronous rectification in DC/DC and AC/DC converters. It delivers RDS(ON) < 3.2 mΩ at VGS = 10 V and < 4.6 mΩ at VGS = 6 V, with 100% UIS and Rg tested, housed in a TO-263 (D2PAK) surface-mount package.

For engineers reviewing the AOB66616L datasheet, pinout, applications, or equivalent options, key selection factors include its low gate charge × RDS(ON) figure-of-merit (42.5–60 nC total gate charge), avalanche-rated ruggedness (EAS = 184 mJ), thermal resistance (RθJC = 1.0°C/W), and TO-263 package suitability for high-power industrial motor drives and server VRMs.

Technical Context

The AOB66616L employs AlphaSGT™ trench-gate silicon technology to achieve ultra-low RDS(ON) while maintaining robust switching performance. Its gate threshold voltage (2.4–3.4 V) supports standard 5 V and 10 V logic-level drive, and its 0.6–1.9 Ω gate resistance enables precise control of dV/dt and EMI during hard-switching.

Dynamic parameters confirm suitability for high-frequency power conversion: Ciss = 2870 pF, Coss = 940 pF, Crss = 38 pF, td(on) = 14.5 ns, tr = 15.5 ns, td(off) = 33 ns, and tf = 12.5 ns. Body diode recovery is characterized with Qrr = 87 nC and trr = 26 ns at IF = 20 A, di/dt = 500 A/μs.

Key Specifications

Parameter Value and Actual Design Meaning
VDS60 V - Maximum blocking voltage compatible with 48 V input systems and 60 V bus architectures.
ID (VGS=10 V)140 A - Continuous drain current rating enabling single-device use in >1 kW power stages.
RDS(ON) (VGS=10 V)< 3.2 mΩ - Enables <1 W conduction loss at 100 A, critical for high-efficiency VRM and POL designs.
Qg (10 V)42.5–60 nC - Low gate charge × RDS(ON) FOM supports efficient 100–500 kHz switching without excessive driver loss.
RθJC1.0 °C/W - Junction-to-case thermal resistance allows direct heatsink mounting for >100 W dissipation with minimal ΔT.
EAS184 mJ - Unclamped inductive switching energy rating ensures reliability under transient overloads in motor drives.
VGS(th)2.4–3.4 V - Gate threshold range guarantees turn-on with 3.3 V or 5 V controllers and avoids spurious conduction.

Pinout & Package

AOB66616L uses the TO-263 (D2PAK) surface-mount package with exposed drain pad for thermal and electrical performance. The package features three terminals: Drain (D), Source (S), and Gate (G), arranged in standard D2PAK top-view configuration.

Pin/Terminal Circuit Role Design Meaning
Drain (D)Main current-carrying terminal, electrically connected to exposed copper padPrimary heat path to PCB heatsink; must be soldered to large copper area for RθJC = 1.0°C/W performance.
Source (S)Reference node for gate drive and current sensingLow-inductance connection required for stable gate control and accurate current monitoring in synchronous rectifiers.
Gate (G)Control terminal for channel modulationHigh-impedance input requiring low-ESR gate resistor (0.6–1.9 Ω typical) to damp ringing and limit peak current.

Key Features

Feature Design Value
AlphaSGT™ Trench TechnologyEnables sub-3.2 mΩ RDS(ON) at 60 V while maintaining high cell density and low gate charge.
100% UIS TestedEach unit validated for unclamped inductive switching up to 184 mJ, ensuring field reliability in motor and converter transients.
100% Rg TestedGuaranteed gate resistance between 0.6 Ω and 1.9 Ω ensures consistent switching behavior and driver compatibility.
RoHS & Halogen-FreeComplies with IPC-1752A material declarations and JEDEC J-STD-020 moisture sensitivity level 3 (MSL3).
TO-263 Thermal PerformanceExposed drain pad and low RθJC (1.0°C/W) enable >100 W continuous operation with PCB-based heatsinking only.

Applications

Server Voltage Regulator Modules (VRMs) Industrial Motor Drive Inverters

Use Scenario: High-density 48 V input VRMs delivering >100 A to CPU/GPU cores in datacenter servers.

IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converters operating at 300–600 kHz.

Use Value: Sub-3.2 mΩ RDS(ON) reduces conduction loss by >30% vs. legacy 60 V MOSFETs, improving full-load efficiency to >95%.

Use Scenario: Three-phase inverter stage driving 3–7.5 kW AC induction motors in factory automation systems.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT replacement topology, switching at ≤20 kHz.

Use Value: 184 mJ avalanche energy rating eliminates need for external snubbers during motor stall or regenerative braking events.

Telecom DC/DC Converters Renewable Energy Inverters

Use Scenario: 48 V to 12 V intermediate bus converters in 5G base station power supplies.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in phase-shifted full-bridge topology.

Use Value: Low Qg/RDS(ON) FOM minimizes switching loss at 200–300 kHz, enabling compact magnetics and reduced heatsink volume.

Use Scenario: DC link switching in string inverters connecting solar arrays to grid-tied AC output.

IC Role / Device Role / Timing Role: Bidirectional switch in active clamp or auxiliary resonant circuits handling 600–1000 V DC bus transients.

Use Value: 100% Rg testing ensures predictable gate drive timing across temperature, critical for zero-voltage switching (ZVS) control stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
IXTP150N065T65 V VDS, 150 A ID, RDS(ON) = 3.4 mΩ @ 10 V, TO-220 package, higher RθJA (40°C/W)Requires through-hole mounting and larger heatsink; less suitable for high-density SMT layoutsSelect when board space permits through-hole assembly and higher VDS margin is needed over 60 V.
IRF1405PBF55 V VDS, 169 A ID, RDS(ON) = 5.3 mΩ @ 10 V, TO-220 package, no UIS or Rg testingLacks avalanche rating and gate resistance screening; not recommended for transient-prone motor or inductive loadsAcceptable only in low-stress, fixed-input DC/DC where voltage derating and ruggedness are noncritical.

Compared with IXTP150N065T and IRF1405PBF, the AOB66616L provides superior thermal performance via TO-263 packaging, guaranteed Rg and UIS validation, and lower RDS(ON)-making it the preferred choice for high-reliability, high-power-density SMT applications demanding repeatable switching behavior and transient immunity.

Availability

AOB66616L is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom DC/DC converters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOB66616L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.

The AOB66616L belongs to AOS's AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-current, high-efficiency power conversion in space-constrained SMT applications where thermal management and ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for AOB66616L?

The AOB66616L has a continuous drain current rating of 140 A at VGS = 10 V and TC = 25°C. At elevated case temperatures, this rating de-rates linearly: 135 A at TC = 70°C and 100 A at TC = 100°C per the datasheet's current de-rating curve. Derating must be applied based on actual thermal design, not ambient conditions alone.

Does AOB66616L support 5 V gate drive?

Yes, the AOB66616L supports 5 V gate drive due to its gate threshold voltage range of 2.4–3.4 V and specified RDS(ON) < 4.6 mΩ at VGS = 6 V. However, full 140 A current capability and minimum RDS(ON) require VGS ≥ 10 V; 5 V drive yields higher conduction loss and should be verified against thermal limits in the target application.

Is AOB66616L pin-compatible with AOT66616L?

No, AOB66616L and AOT66616L are not pin-compatible. AOB66616L uses the TO-263 (D2PAK) surface-mount package with drain-source-gate pinout, while AOT66616L uses the TO-220 through-hole package with different mechanical layout and thermal pad configuration. PCB redesign is required for substitution.

What does "100% UIS Tested" mean for AOB66616L?

"100% UIS Tested" means every AOB66616L unit undergoes individual unclamped inductive switching stress testing at rated current and voltage, verifying its ability to absorb 184 mJ of avalanche energy without failure. This ensures robustness against inductive kickback in motor drives and converter hard-switching events, beyond standard qualification sampling.

Can AOB66616L be used in parallel configurations?

Yes, the AOB66616L supports paralleling due to its positive temperature coefficient of RDS(ON), which promotes current sharing across devices. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling-verified in AOS application note AN-8015 for multi-phase VRM designs using AOB66616L.

AOB66616L Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
AlphaSGT™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
38.5A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Rds On (Max) @ Id, Vgs:
3.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:
3.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2870 pF @ 30 V
FET Feature:
-
Power Dissipation (Max):
8.3W (Ta), 125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263 (D2PAK)

AOB66616L FAQ

1.How can I place an order for AOB66616L through Aetrix?

Please submit a Request for Quotation (RFQ) for AOB66616L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOB66616L reliable?

The price and inventory of AOB66616L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOB66616L is usually 5 days.

3.What payment methods are accepted for AOB66616L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOB66616L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOB66616L?

AOB66616L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOB66616L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOB66616L?

For technical support, including AOB66616L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOB66616L requirements.

6.How does Aetrix verify that AOB66616L is sourced from the original manufacturer or authorized distributors?

All AOB66616L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOB66616L meets industry standards.

7.What is the process for return or replacement of AOB66616L?

All AOB66616L units undergo pre-shipment inspection (PSI). If there is an issue with AOB66616L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOB66616L part is unused and in its original packaging.

Return procedure for AOB66616L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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