Alpha & Omega Semiconductor Inc. AOB66920L

Overview

AOB66920L from Alpha & Omega Semiconductor is a 100V, 80A N-channel Trench Power MOSFET using AlphaSGT™ technology in TO-263 (D2PAK) package. It delivers <8mΩ R_DS(ON) at V_GS=10V and <10.5mΩ at V_GS=4.5V, enabling high-efficiency synchronous rectification and high-frequency DC-DC conversion in server power supplies.

For engineers reviewing the AOB66920L datasheet, pinout, applications, or equivalent options, key selection criteria include logic-level gate drive compatibility, UIS-rated ruggedness, low Q_G×R_DS(ON) figure-of-merit, thermal performance under 100°C case temperature, and TO-263 footprint suitability for high-current PCB layouts.

Technical Context

This MOSFET employs AlphaSGT™ trench-gate structure to achieve optimized trade-offs between conduction loss and switching loss. Its gate threshold voltage (1.5–2.5V) supports direct logic-level driving from 3.3V/5V controllers, while its 13pF Crss and 5nC Q_gd minimize Miller-induced turn-off delay and improve hard-switching robustness.

The device is fully characterized for unclamped inductive switching (UIS) and gate resistance (R_g), with 72mJ avalanche energy rating at L=0.1mH. Thermal design is supported by validated R_θJC = 1.25°C/W and R_θJA = 60°C/W (1in² FR-4, 2oz Cu).

Key Specifications

Pinout & Package

AOB66920L is housed in a TO-263 (D2PAK) surface-mount package with exposed drain pad for enhanced thermal dissipation. The package features gull-wing leads compatible with standard reflow profiles and supports high-current PCB copper pours.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IXTP80N10P and STP80NF10, the AOB66920L provides superior thermal performance (1.25°C/W vs. ≥2.5°C/W), lower gate charge for high-frequency operation, and verified UIS capability-making it the preferred choice for space-constrained, high-reliability 100V power stages.

Availability

AOB66920L is available at Aetrix Electronics and suitable for server VRMs, industrial 48V DC-DC converters, telecom rectifier modules, and EV onboard charger PFC stages requiring stable component supply and long-term production continuity.

Supply support for AOB66920L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOB66920L belongs to AOS's AlphaSGT™ Trench MOSFET product line, engineered specifically for high-current, high-efficiency power conversion where low R_DS(ON), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum continuous drain current rating for AOB66920L at T_C = 100°C?

The AOB66920L is rated for 80A continuous drain current at T_C = 100°C, as confirmed in the Absolute Maximum Ratings table. This rating assumes proper PCB copper area and thermal vias to maintain case temperature at or below 100°C under steady-state operation. Derating applies above this temperature per Figure 13 in the datasheet.

Does AOB66920L support logic-level gate drive from a 3.3V microcontroller?

Yes, the AOB66920L supports logic-level gate drive: its gate threshold voltage V_GS(th) is specified from 1.5V to 2.5V at 250μA, and R_DS(ON) remains <10.5mΩ at V_GS = 4.5V. This enables direct interface with 3.3V and 5V controllers without gate boosting, provided sufficient peak gate current (>2A) is supplied during switching transitions.

What is the thermal resistance from junction to case (R_θJC) for AOB66920L?

The AOB66920L has a measured R_θJC of 1.25°C/W, as stated in the Thermal Characteristics table. This value is validated under standard test conditions with the device mounted to a large heatsink and is used to calculate junction temperature rise under known power dissipation and case temperature conditions.

Is AOB66920L qualified for unclamped inductive switching (UIS)?

Yes, every AOB66920L unit undergoes 100% UIS testing per the datasheet. It is rated for 72mJ avalanche energy at L = 0.1mH and T_J = 25°C, with performance maintained across temperature per the normalized R_DS(ON) vs. T_J curve. This qualification supports robust operation in hard-switched topologies subject to inductive transients.

What package type and mounting configuration does AOB66920L use?

The AOB66920L uses a TO-263 (D2PAK) surface-mount package with an exposed drain pad on the bottom side. It is supplied in tape-and-reel format (800 units per reel) and requires soldering to a PCB with thermal vias and copper pour under the drain pad to realize the specified R_θJC = 1.25°C/W performance.