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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOD2910E

Name: AOD2910E
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOD2910E
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOD2910E

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AOD2910E.pdf

Description:: MOSFET N-CH 100V 37A TO252

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOD2910E from Alpha & Omega Semiconductor is a 100V, 37A N-channel Trench Power MV MOSFET in TO-252 (DPAK) package, featuring R_DS(ON) < 23 mΩ at V_GS = 10 V and < 33 mΩ at V_GS = 4.5 V, with integrated HBM Class 2 ESD protection and 100% UIS testing - deployed in synchronous rectification stages of DC/DC converters.

For engineers reviewing the AOD2910E datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge (Q_g = 16.5–25 nC @ 10 V), fast switching (t_on = 9 ns, t_off = 25 ns), avalanche-rated ruggedness, thermal resistance R_θJC = 2.1 °C/W, and body diode recovery performance (Q_rr = 120 nC, t_rr = 25 ns).

Technical Context

The AOD2910E employs Trench Power MV MOSFET technology optimized for high-efficiency, high-frequency switching in hard-switched topologies. Its gate threshold voltage (1.6–2.7 V) enables robust 4.5 V logic-level drive compatibility, while low C_iss (1200 pF) and Cr_ss (6.3 pF) reduce Miller-induced turn-off delay and improve EMI behavior.

Thermally, it supports junction temperatures up to 175 °C with R_θJC = 2.1 °C/W and R_θJA = 50 °C/W (1 in² FR-4, 2 oz Cu). The device is 100% tested for unclamped inductive switching (UIS) energy (E_AS = 10 mJ) and gate resistance (R_g = 0.5–1.5 Ω), ensuring production-grade reliability in motor drive and power supply transient conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports input rails up to 85 V DC in offline SMPS or 48 V industrial bus systems with margin.
I_D (V_GS = 10 V)	37 A - Delivers continuous output current in high-current synchronous rectifier legs without forced cooling.
R_DS(ON) (V_GS = 10 V)	< 23 mΩ - Limits conduction loss to ≤ 0.031 W at 25 A, enabling >95% efficiency in 12 V → 1 V point-of-load designs.
Q_g (10 V)	16.5–25 nC - Enables <100 ns total switching transition time with 3 Ω gate driver, reducing dynamic losses at 500 kHz.
E_AS	10 mJ - Withstands single-pulse inductive energy from 0.1 mH chokes at 37 A, eliminating need for external snubbers in flyback primary switches.
t_rr / Q_rr	25 ns / 120 nC - Minimizes reverse recovery cross-conduction loss during high-side/lower-side dead-time in half-bridge configurations.
R_θJC	2.1 °C/W - Allows ≥71.5 W power dissipation at T_C = 100 °C, supporting compact heatsink integration in space-constrained motor drives.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-die configuration with exposed drain pad for thermal conduction. Standard lead finish: matte tin.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal for channel modulation	Low-impedance input (R_g = 0.5–1.5 Ω); requires <25 nC charge for full enhancement; sensitive to ESD (HBM Class 2).
S (Source)	Reference node for gate drive and current return	Common source connection for low-side switching; ties to PCB ground plane; body diode anode.
D (Drain)	High-side current path and thermal interface	Exposed copper pad on bottom side; electrically connected to drain; primary thermal path to heatsink or inner-layer copper.

Key Features

Feature	Design Value
Trench Power MV process	Enables simultaneous optimization of R_DS(ON), Q_g, and C_oss - critical for ZVS/ZCS resonant converter efficiency.
100% UIS tested	Guarantees minimum 10 mJ avalanche energy handling per unit, eliminating field failure risk in inductive load transients.
Low Q_gd/Q_g ratio	Q_gd = 2.5 nC (≤10% of Q_g) - suppresses Miller plateau duration, improving controllability in high-dV/dt environments.
Body diode with soft recovery	t_rr = 25 ns, Q_rr = 120 nC - reduces voltage overshoot and ringing when used as freewheeling diode in buck or LLC secondary side.
HBM Class 2 ESD rating	Withstands ≥2 kV human-body-model discharge - enables safe handling and assembly without special ESD controls beyond standard IPC-610 practices.

Applications

Server VRM Synchronous Rectifier	Industrial 48 V DC Motor Drive
Use Scenario: High-current, high-frequency (300–600 kHz) buck converter delivering 100+ A at 1.2 V to CPU/GPU cores. IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; switched complementary to high-side control FET. Use Value: R_DS(ON) < 23 mΩ cuts conduction loss by >60% vs. 40 V Schottky, while Q_g < 25 nC ensures clean 5 ns rise/fall edges under 3 Ω gate drive.	Use Scenario: Half-bridge inverter driving brushed or BLDC motors in factory automation equipment operating from 48 V nominal bus. IC Role / Device Role / Timing Role: Upper- and lower-leg switching element; conducts bidirectional current during PWM commutation and regenerative braking. Use Value: 100% UIS-tested ruggedness withstands 40 V inductive spikes during abrupt current interruption; t_rr = 25 ns prevents shoot-through during dead-time transitions.
AC/DC Adapter Secondary Side	Telecom PoE++ Power Sourcing Equipment
Use Scenario: 65 W–100 W flyback or LLC resonant adapter with secondary-side synchronous rectification for USB-C PD compliance. IC Role / Device Role / Timing Role: Output rectifier MOSFET synchronized to transformer secondary voltage zero-crossings via controller. Use Value: V_DS = 100 V provides 20% margin over 85 V peak reflected voltage; low R_DS(ON) improves light-load efficiency by >3% at 10% load.	Use Scenario: 90 W PoE++ PSE (IEEE 802.3bt Type 4) injector supplying power over Category 6A cabling to edge AI cameras or access points. IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or half-bridge topology managing 57 V input and 54 V output regulation. Use Value: R_θJC = 2.1 °C/W enables 71.5 W dissipation at 100 °C case temperature - sufficient for continuous 90 W operation with minimal heatsinking.

Server VRM Synchronous Rectifier

Industrial 48 V DC Motor Drive

Use Scenario: High-current, high-frequency (300–600 kHz) buck converter delivering 100+ A at 1.2 V to CPU/GPU cores.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET replacing Schottky diode; switched complementary to high-side control FET.

Use Value: R_DS(ON) < 23 mΩ cuts conduction loss by >60% vs. 40 V Schottky, while Q_g < 25 nC ensures clean 5 ns rise/fall edges under 3 Ω gate drive.

Use Scenario: Half-bridge inverter driving brushed or BLDC motors in factory automation equipment operating from 48 V nominal bus.

IC Role / Device Role / Timing Role: Upper- and lower-leg switching element; conducts bidirectional current during PWM commutation and regenerative braking.

Use Value: 100% UIS-tested ruggedness withstands 40 V inductive spikes during abrupt current interruption; t_rr = 25 ns prevents shoot-through during dead-time transitions.

AC/DC Adapter Secondary Side

Telecom PoE++ Power Sourcing Equipment

Use Scenario: 65 W–100 W flyback or LLC resonant adapter with secondary-side synchronous rectification for USB-C PD compliance.

IC Role / Device Role / Timing Role: Output rectifier MOSFET synchronized to transformer secondary voltage zero-crossings via controller.

Use Value: V_DS = 100 V provides 20% margin over 85 V peak reflected voltage; low R_DS(ON) improves light-load efficiency by >3% at 10% load.

Use Scenario: 90 W PoE++ PSE (IEEE 802.3bt Type 4) injector supplying power over Category 6A cabling to edge AI cameras or access points.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or half-bridge topology managing 57 V input and 54 V output regulation.

Use Value: R_θJC = 2.1 °C/W enables 71.5 W dissipation at 100 °C case temperature - sufficient for continuous 90 W operation with minimal heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF8721PbF	R_DS(ON) = 22 mΩ @ 10 V (similar), but Q_g = 12 nC (lower) and no UIS test data published; TO-252 package.	Lacks documented UIS rating and body diode Q_rr spec - less suitable for inductive motor drive or flyback primary switching.	Select AOD2910E where avalanche ruggedness and soft-recovery diode are required; IRF8721PbF preferred only for ultra-low-Q_g logic-level apps with benign loads.
SiHFL110	R_DS(ON) = 24 mΩ @ 10 V (slightly higher), Q_g = 27 nC (higher), but rated for 110 V V_DS; TO-252 package.	Higher voltage rating adds margin for 100 V bus transients but increases switching loss due to higher Q_g and C_iss.	Choose SiHFL110 only if system requires >100 V breakdown margin; AOD2910E offers better efficiency in 48–85 V systems due to lower Q_g and proven UIS robustness.

Compared with IRF8721PbF and SiHFL110, the AOD2910E delivers superior balance of low R_DS(ON), moderate Q_g, guaranteed UIS performance, and soft-recovery body diode - making it optimal for high-reliability, high-efficiency synchronous rectification and motor drive applications within 100 V systems.

Availability

AOD2910E is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, AC/DC adapters, and PoE++ power sourcing equipment requiring stable component supply, long-term lifecycle support, and traceable manufacturing origin.

Supply support for AOD2910E includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AOD2910E belongs to AOS' Trench Power MV MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion in synchronous rectifiers, DC/DC converters, and motor control inverters.

FAQ

What is the maximum continuous drain current rating for the AOD2910E at 100 °C case temperature?

The AOD2910E supports 37 A continuous drain current at T_C = 25 °C, de-rating linearly to 26 A at T_C = 100 °C per the datasheet's current de-rating curve (Figure 13). This reflects thermal limits imposed by R_θJC = 2.1 °C/W and T_J(MAX) = 175 °C. At 100 °C case, the AOD2910E maintains full R_DS(ON) specification and remains within safe SOA boundaries for DC operation.

Does the AOD2910E have built-in ESD protection, and what level is specified?

Yes, the AOD2910E includes on-die ESD protection rated to Human Body Model (HBM) Class 2 per JESD22-A114, meaning it withstands ≥2 kV electrostatic discharge. This is confirmed in the "Product Summary" section and "Absolute Maximum Ratings" table of the official AOS datasheet Rev. 1.1. No external ESD protection circuitry is required for standard handling and PCB assembly of the AOD2910E.

Can the AOD2910E be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No - the AOD2910E has a gate threshold voltage (V_GS(th)) range of 1.6–2.7 V, but its R_DS(ON) is only guaranteed ≤33 mΩ at V_GS = 4.5 V and ≤23 mΩ at V_GS = 10 V. At 3.3 V, the device operates in weak inversion with significantly elevated R_DS(ON) (>100 mΩ), causing excessive conduction loss and thermal runaway. A dedicated gate driver or level-shifting buffer is required for reliable operation of the AOD2910E.

What is the typical body diode forward voltage of the AOD2910E, and how does it affect synchronous rectifier performance?

The AOD2910E body diode exhibits V_SD = 0.72–1.0 V at I_S = 1 A and T_J = 25 °C (typical), per the "Electrical Characteristics" table. In synchronous rectifier applications, this low forward voltage minimizes conduction loss during dead-time conduction, while its soft recovery (t_rr = 25 ns, Q_rr = 120 nC) reduces voltage spikes and EMI - directly improving efficiency and reliability compared to discrete Schottky solutions.

Is the AOD2910E suitable for use in the high-side position of a half-bridge configuration?

Yes - the AOD2910E is commonly used in high-side half-bridge positions, especially in active-clamp forward or LLC resonant converters. Its 100 V V_DS rating, low Q_gd/Q_g ratio (2.5 nC / ~20 nC), and fast t_off (25 ns) enable clean high-side switching with minimal shoot-through risk when paired with appropriate gate drive timing and dead-time control. The AOD2910E's robust UIS rating further supports reliability during high-side inductive transients.

AOD2910E Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: 37A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

AOD2910E FAQ

1.How can I place an order for AOD2910E through Aetrix?

Please submit a Request for Quotation (RFQ) for AOD2910E on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOD2910E reliable?

The price and inventory of AOD2910E are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD2910E is usually 5 days.

3.What payment methods are accepted for AOD2910E?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD2910E transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOD2910E?

AOD2910E orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOD2910E order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOD2910E?

For technical support, including AOD2910E datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD2910E requirements.

6.How does Aetrix verify that AOD2910E is sourced from the original manufacturer or authorized distributors?

All AOD2910E products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD2910E meets industry standards.

7.What is the process for return or replacement of AOD2910E?

All AOD2910E units undergo pre-shipment inspection (PSI). If there is an issue with AOD2910E, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOD2910E part is unused and in its original packaging.

Return procedure for AOD2910E:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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