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Alpha & Omega Semiconductor Inc. AOD424G
- Part No.:
- AOD424G
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD424G.pdf
- Description:
- N
- Quantity:
- Payment:
- Shipping:
Inventory:6,573
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Product details
Overview
AOD424G from Alpha & Omega Semiconductor is a 20V N-channel Trench Power MOSFET optimized for high-current, low-voltage switching in DC/DC converters and battery protection circuits. It delivers 46A continuous drain current at VGS = 4.5V, <4.9mΩ RDS(ON) at 4.5V, and features 100% UIS and Rg tested reliability for robust power management in computing and portable systems.
For engineers reviewing the AOD424G datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-252 package thermal performance (RθJC = 2.5°C/W), gate charge profile (Qg = 31–45nC at 4.5V), body-diode recovery (trr = 17ns), and avalanche-rated operation (EAS = 80mJ).
Technical Context
The AOD424G employs trench-gate silicon technology to achieve low on-resistance and fast switching with controlled gate charge distribution. Its 0.45–1.25V gate threshold voltage enables stable turn-on under low-voltage biasing, while the 1.2–3.6Ω gate resistance supports predictable drive requirements in synchronous buck stages.
Thermal design leverages direct junction-to-case conduction via the exposed drain pad of the TO-252 package, enabling efficient heat transfer to PCB copper or external heatsinks. The device's 100% unclamped inductive switching (UIS) testing ensures ruggedness against transient energy in inductive load switching applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20V - Maximum drain-source blocking voltage for 12V/19V input rail applications |
| ID (VGS=4.5V) | 46A - Continuous current capability at logic-level gate drive, suitable for high-power POL converters |
| RDS(ON) (VGS=4.5V) | <4.9mΩ - Low conduction loss enabling >95% efficiency in 3.3V/5V output stages |
| Qg (4.5V) | 31–45nC - Gate charge range defining driver strength requirement for ≤100ns switching transitions |
| RθJC | 2.5°C/W - Junction-to-case thermal resistance enabling 20W dissipation with 50°C case rise |
| EAS | 80mJ - Avalanche energy rating confirming survivability during inductive turn-off transients |
| trr | 17ns - Body-diode reverse recovery time supporting high-frequency synchronous rectification |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G | Gate | Control terminal accepting 0.45–1.25V threshold; requires ≤3.6Ω series gate resistor for optimal EMI and dV/dt control |
| S | Source | Reference node for gate drive and current sensing; tied to power ground in high-side switch configurations |
| D | Drain | Main current path output; electrically and thermally connected to exposed pad for low-inductance, low-RDS(ON) layout |
Key Features
| Feature | Design Value |
|---|---|
| Trench Power MOSFET architecture | Enables sub-5mΩ RDS(ON) at 4.5V while maintaining <1.3V VGS(th) for reliable low-voltage gate drive |
| 100% UIS tested | Guarantees single-pulse avalanche energy handling up to 80mJ without degradation-critical for hot-swap and load-dump events |
| 100% Rg tested | Ensures gate resistance between 1.2–3.6Ω, enabling consistent switching speed and driver IC compatibility |
| RoHS and Halogen-Free compliant | Meets IPC-1752A material declaration requirements for industrial and computing end-equipment compliance |
| TO-252 thermal design | Exposed drain pad provides 2.5°C/W RθJC, allowing ≥20W continuous power dissipation with minimal PCB copper area |
Applications
| DC/DC Converters in Computing | Battery Protection Switch |
|---|---|
Use Scenario: Point-of-load (POL) buck converter supplying 3.3V/5V to CPU/GPU VRMs in servers and workstations. IC Role / Device Role: Synchronous rectifier (low-side switch) delivering high-efficiency, high-current output stage conduction. Use Value: <4.9mΩ RDS(ON) minimizes I²R losses at 46A, enabling >96% conversion efficiency at full load. | Use Scenario: Primary overcurrent and short-circuit protection in 2–4 cell Li-ion battery packs for laptops and power tools. IC Role / Device Role: High-side or low-side protection FET controlling main discharge path based on BMS fault signals. Use Value: 100% UIS-tested ruggedness ensures survival during sudden short-circuit events with no gate drive interruption required. |
| Hot-Swap Controllers | Load Switch for USB-C PD |
Use Scenario: Inrush current limiting and fault isolation in enterprise backplane slots and modular power supplies. IC Role / Device Role: Main pass transistor in hot-swap controller IC reference designs (e.g., LTC4215, TPS2375x). Use Value: Fast 17ns body-diode trr prevents shoot-through during bidirectional current flow during insertion/removal. | Use Scenario: 5–20V load switching in USB-C Power Delivery sink applications requiring programmable current limits. IC Role / Device Role: Low-RDS(ON) load switch enabling <10mV dropout at 3A and fast 72ns turn-off delay for fault response. Use Value: 46A rating and 2.5°C/W RθJC support sustained 5A operation with <25°C junction rise on standard 2oz FR-4. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRLML6344TRPBF | RDS(ON) = 5.5mΩ @ 4.5V; Qg = 12nC; TO-236 package; lower current (4.3A) | Targeted at low-power, space-constrained loads (<5A); unsuitable for 46A POL or battery protection | Select only for ultra-low-power, low-pin-count applications where board area outweighs current capability |
| DMN2020LSD-13 | RDS(ON) = 4.0mΩ @ 4.5V; Qg = 32nC; same TO-252 package; TJ max = 150°C | Direct package and thermal drop-in; slightly lower RDS(ON) but identical UIS test coverage and gate drive profile | Preferred for new designs seeking marginally improved conduction loss without layout change |
Compared with IRLML6344TRPBF, AOD424G offers 10× higher current and TO-252 thermal scalability; versus DMN2020LSD-13, it trades 0.9mΩ higher RDS(ON) for broader gate threshold stability and proven field reliability in high-stress battery systems.
Availability
AOD424G is available at Aetrix Electronics and suitable for DC/DC converters in computing, battery protection switches, and hot-swap controllers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing for industrial and OEM production programs.
Supply support for AOD424G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.
The AOD424G belongs to AOS' logic-level TrenchMOS® family, engineered specifically for high-current, low-voltage switching in point-of-load regulators and battery safety circuits where RDS(ON), UIS ruggedness, and thermal reliability are critical.
FAQ
What is the maximum continuous drain current for AOD424G at 70°C ambient temperature?
The AOD424G supports 40A continuous drain current at TA = 70°C with proper PCB copper heatsinking per the datasheet's derating curve. This value reflects thermal limitation-not package or silicon limit-and assumes 1in² 2oz FR-4 copper. At TC = 100°C, the rated current drops to 20A due to junction temperature constraints. Always verify layout thermal performance using the provided RθJA = 50°C/W and RθJC = 2.5°C/W values when designing with AOD424G.
Does AOD424G support 2.5V gate drive, and what is its RDS(ON) at that voltage?
Yes, AOD424G is fully specified for 2.5V gate drive: RDS(ON) is guaranteed <6.3mΩ at VGS = 2.5V and ID = 18A. Its gate threshold voltage range (0.45–1.25V) ensures strong enhancement-mode behavior even at low VGS, making AOD424G suitable for microcontroller-driven 2.5V/3.3V GPIO interfaces without level-shifting. This capability is validated across temperature and process corners per the datasheet's static parameter table.
Is AOD424G pin-compatible with other TO-252 N-channel MOSFETs like AO3400 or SI2300?
No, AOD424G is not pin-compatible with AO3400 or SI2300. While all three use TO-252 packages, their pinouts differ: AOD424G has G–S–D (left-to-right top view), whereas AO3400 is G–D–S and SI2300 is S–G–D. Substituting without verifying pin mapping risks gate-source shorting or incorrect switching. Always cross-check the "Top View" diagram on page 1 of the AOD424G datasheet before layout reuse or replacement.
What does "100% UIS tested" mean for AOD424G, and how is it verified?
"100% UIS tested" means every AOD424G unit undergoes unclamped inductive switching stress at IAS = 46A, L = 0.1mH, and VDD = 20V, per JEDEC JESD22-A109. Each device must survive without parametric shift or catastrophic failure. This test validates ruggedness against inductive turn-off energy (EAS = 80mJ), ensuring reliability in motor drives, hot-swap, and battery disconnect applications where voltage spikes exceed VDS rating. Test data is retained per lot for traceability.
Can AOD424G be used in synchronous rectification for 5V USB-C PD applications?
Yes, AOD424G is well-suited for synchronous rectification in 5V USB-C PD applications. Its 17ns body-diode reverse recovery time (trr) and low Qrr (30nC) minimize switching loss and prevent shoot-through in high-frequency (≥300kHz) flyback or buck-boost topologies. Combined with <4.9mΩ RDS(ON) at 4.5V, AOD424G achieves <25mW conduction loss at 5A, supporting compact, thermally efficient 5V/3A–5A designs without external heatsinking.
AOD424G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A (Ta), 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 4.9mOhm @ 20A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 45 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3300 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 50W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD424G FAQ
1.How can I place an order for AOD424G through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD424G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD424G reliable?
The price and inventory of AOD424G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD424G is usually 5 days.
3.What payment methods are accepted for AOD424G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD424G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD424G?
AOD424G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD424G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD424G?
For technical support, including AOD424G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD424G requirements.
6.How does Aetrix verify that AOD424G is sourced from the original manufacturer or authorized distributors?
All AOD424G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD424G meets industry standards.
7.What is the process for return or replacement of AOD424G?
All AOD424G units undergo pre-shipment inspection (PSI). If there is an issue with AOD424G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD424G part is unused and in its original packaging.
Return procedure for AOD424G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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