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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOD4286

Name: AOD4286
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOD4286
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOD4286

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: AOD4286.pdf

Description:: MOSFET N CH 100V 4A TO252

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOD4286 from Alpha & Omega Semiconductor is a 100V N-Channel Trench MOSFET optimized for high-frequency switching, with R_DS(ON) < 68 mΩ at V_GS = 10 V, 14 A continuous drain current, and 100% UIS-tested ruggedness-used in synchronous rectifiers and boost converters for telecom and industrial power supplies.

For engineers reviewing the AOD4286 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based low-R_DS(ON)/low-C_iss trade-off, TO-252 (DPAK) thermal performance, and body diode recovery characteristics critical for hard-switched topologies.

Technical Context

The AOD4286 employs trench-gate silicon MOSFET technology to simultaneously minimize conduction loss (via sub-68 mΩ R_DS(ON)) and switching loss (via 390 pF C_iss, 3 pF C_rss, and 5.8 nC Q_g at 10 V). Its 100% unclamped inductive switching (UIS) testing ensures reliability under transient overcurrent stress.

Thermal design leverages a junction-to-case resistance of 5 °C/W and supports operation up to 175 °C junction temperature. The device's gate threshold voltage (1.7–2.9 V) and low 2.8 nC Q_g at 4.5 V enable robust drive compatibility with standard logic-level controllers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage for primary-side switch or synchronous rectifier in 48 V input systems.
R_DS(ON) @ V_GS=10 V	< 68 mΩ - Enables ≤1.0 W conduction loss at 14 A DC, suitable for high-efficiency 100–200 W converters.
R_DS(ON) @ V_GS=4.5 V	< 92 mΩ - Ensures usable on-resistance with 3.3 V or 5 V gate drivers without level-shifting.
Q_g @ 10 V	5.8–10 nC - Low gate charge reduces driver power loss and enables >500 kHz switching in hard-switched designs.
C_iss	390 pF - Low input capacitance minimizes Miller-induced turn-on risk and eases gate drive design.
E_AS	104 mJ - Confirmed avalanche energy rating supports reliable operation during inductive transients without snubbers.
T_J max	175 °C - Extended junction temperature allows higher power density in constrained thermal environments.

Pinout & Package

Package: TO-252 (DPAK), surface-mount, single-die N-Channel MOSFET with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control terminal	Receives gate drive signal; low 7 Ω gate resistance and 2.8 nC Q_g(4.5 V) support fast, low-loss switching.
D (Drain)	High-side current path	Connected to high-voltage node; electrically tied to exposed pad for low-inductance, high-current return path and thermal conduction.
S (Source)	Reference/return node	Common reference for gate drive and load current; body diode anode, enabling synchronous rectification capability.

Key Features

Feature	Design Value
Trench MOSFET architecture	Delivers <68 mΩ R_DS(ON) and 390 pF C_iss simultaneously-enabling high efficiency at >300 kHz in compact power stages.
100% UIS tested	Guarantees minimum 104 mJ avalanche energy (T_J = 125 °C), eliminating need for external clamping in boost or flyback primary switches.
Low Q_g/Q_gd ratio	Q_gd = 1.2 nC / Q_g(10 V) ≈ 12% - Reduces Miller plateau duration and improves immunity to dv/dt-induced false turn-on.
Enhanced body diode	V_SD = 0.76–1.0 V @ 1 A, t_rr = 15 ns - Enables efficient synchronous rectification in DC/DC converters without external Schottky replacement.

Applications

Boost Converter Primary Switch	Synchronous Rectifier
Use Scenario: High-efficiency 48 V–12 V step-down converter in telecom power shelves using coupled inductor topology. IC Role / Device Role / Timing Role: Main switching FET operating at 300–500 kHz with hard commutation and high dV/dt stress. Use Value: Sub-68 mΩ R_DS(ON) and 100% UIS rating eliminate snubber losses and improve system MTBF under line transients.	Use Scenario: Secondary-side rectification in isolated 12 V output LLC resonant converter for server PSUs. IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode, timed to match transformer secondary voltage polarity. Use Value: Body diode t_rr = 15 ns and V_SD = 0.76 V reduce reverse recovery loss and forward conduction loss vs. discrete diodes.
LED Backlight Driver	Industrial DC Motor Control
Use Scenario: Constant-current boost LED driver for large-panel LCD backlighting with 100 V bus requirement. IC Role / Device Role / Timing Role: High-side PWM-controlled switch modulating current through series-connected LED strings. Use Value: 14 A ID rating and 175 °C TJ max allow sustained 10–15 A pulsed operation in thermally limited metal-core PCBs.	Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor controller for factory automation actuators. IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with regenerative braking energy dissipation. Use Value: Rugged 104 mJ E_AS withstands inductive kickback during rapid PWM reversal without desaturation protection.

Boost Converter Primary Switch

Synchronous Rectifier

Use Scenario: High-efficiency 48 V–12 V step-down converter in telecom power shelves using coupled inductor topology.

IC Role / Device Role / Timing Role: Main switching FET operating at 300–500 kHz with hard commutation and high dV/dt stress.

Use Value: Sub-68 mΩ R_DS(ON) and 100% UIS rating eliminate snubber losses and improve system MTBF under line transients.

Use Scenario: Secondary-side rectification in isolated 12 V output LLC resonant converter for server PSUs.

IC Role / Device Role / Timing Role: Synchronously gated low-side switch replacing Schottky diode, timed to match transformer secondary voltage polarity.

Use Value: Body diode t_rr = 15 ns and V_SD = 0.76 V reduce reverse recovery loss and forward conduction loss vs. discrete diodes.

LED Backlight Driver

Industrial DC Motor Control

Use Scenario: Constant-current boost LED driver for large-panel LCD backlighting with 100 V bus requirement.

IC Role / Device Role / Timing Role: High-side PWM-controlled switch modulating current through series-connected LED strings.

Use Value: 14 A ID rating and 175 °C TJ max allow sustained 10–15 A pulsed operation in thermally limited metal-core PCBs.

Use Scenario: H-bridge half-bridge leg in 24–48 V brushed DC motor controller for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with regenerative braking energy dissipation.

Use Value: Rugged 104 mJ E_AS withstands inductive kickback during rapid PWM reversal without desaturation protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-Channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N10F7	100 V, 110 A, R_DS(ON) = 7.5 mΩ @ 10 V; TO-220 package; higher current, larger footprint, higher Q_g (70 nC).	Better suited for high-current linear or low-frequency switching; not optimal for >200 kHz due to gate charge.	Select when board space permits TO-220 and peak current exceeds 30 A; avoid for compact high-frequency SMPS.
IRF540NPBF	100 V, 33 A, R_DS(ON) = 44 mΩ @ 10 V; TO-220; older planar process; no UIS rating specified.	Lacks guaranteed avalanche ruggedness and has higher C_iss (950 pF); less stable under hard-switched transients.	Acceptable for cost-sensitive, non-critical 50–100 kHz applications where layout includes snubbers and thermal margin exists.

Compared with STP110N10F7 and IRF540NPBF, the AOD4286 provides superior high-frequency efficiency via lower Q_g/C_iss, verified UIS robustness for unclamped inductive loads, and TO-252 thermal performance ideal for space-constrained 100–200 W power stages.

Availability

AOD4286 is available at Aetrix Electronics and suitable for telecom power supplies, industrial DC-DC converters, and LED backlighting systems requiring stable component supply, consistent parametric performance across production lots, and long-term lifecycle availability.

Supply support for AOD4286 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AOD4286 belongs to AOS's TrenchMOS® family, engineered specifically for high-efficiency, high-frequency DC/DC conversion where low R_DS(ON), low gate charge, and rugged avalanche capability are essential.

FAQ

What is the maximum continuous drain current rating for the AOD4286 at 100°C case temperature?

The AOD4286 supports 10 A continuous drain current at T_C = 100 °C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-252 package and ensures safe operation without exceeding 175 °C maximum junction temperature. The AOD4286 maintains stable R_DS(ON) performance across this range due to its positive temperature coefficient.

Does the AOD4286 have a specified avalanche energy rating, and is it tested?

Yes, the AOD4286 is 100% unclamped inductive switching (UIS) tested with a minimum rated avalanche energy (E_AS) of 104 mJ at T_J = 125 °C. This rating is confirmed in the datasheet's Absolute Maximum Ratings table and validated per JEDEC JESD24-11. The AOD4286 uses this ruggedness to operate reliably in boost and flyback primary switches without external clamping.

Can the AOD4286 be driven directly by a 3.3 V microcontroller GPIO without a gate driver?

No-the AOD4286 requires ≥4.5 V gate drive for reliable enhancement-mode operation, with typical R_DS(ON) < 92 mΩ only above that threshold. A 3.3 V GPIO cannot fully enhance the device and will result in excessive conduction loss. The AOD4286 must be paired with a dedicated gate driver or level-shifter to achieve its specified 68 mΩ R_DS(ON) and low switching loss.

What is the thermal resistance from junction to ambient (R_θJA) for the AOD4286 in standard PCB layout?

The AOD4286 has R_θJA = 50 °C/W when mounted on a 1 in² FR-4 board with 2 oz copper in still air, per Note H in the datasheet. This value assumes standard solder mask-defined thermal pad layout. For improved thermal performance, the AOD4286's exposed drain pad must be connected to a large copper pour or internal ground plane to approach its R_θJC = 5 °C/W limit.

How does the body diode performance of the AOD4286 compare to discrete Schottky diodes in synchronous rectification?

The AOD4286's integrated body diode delivers V_SD = 0.76–1.0 V at 1 A and t_rr = 15 ns, enabling efficient synchronous rectification without external diodes in medium-frequency DC/DC converters. While discrete Schottky diodes offer lower forward voltage, the AOD4286 eliminates component count and layout complexity-its performance is validated in real-world boost and LLC designs where its Q_rr = 53 nC and soft recovery reduce EMI versus fast-recovery diodes.

AOD4286 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta), 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 68mOhm @ 5A, 10V

Vgs(th) (Max) @ Id:: 2.9V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 390 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Ta), 30W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252 (DPAK)

AOD4286 FAQ

1.How can I place an order for AOD4286 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOD4286 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOD4286 reliable?

The price and inventory of AOD4286 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD4286 is usually 5 days.

3.What payment methods are accepted for AOD4286?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD4286 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOD4286?

AOD4286 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOD4286 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOD4286?

For technical support, including AOD4286 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD4286 requirements.

6.How does Aetrix verify that AOD4286 is sourced from the original manufacturer or authorized distributors?

All AOD4286 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD4286 meets industry standards.

7.What is the process for return or replacement of AOD4286?

All AOD4286 units undergo pre-shipment inspection (PSI). If there is an issue with AOD4286, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOD4286 part is unused and in its original packaging.

Return procedure for AOD4286:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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