Alpha & Omega Semiconductor Inc. AOD66620
- Part No.:
- AOD66620
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
AOD66620.pdf
- Description:
- MOSFET N-CH 60V TO252
- Quantity:
- Payment:

- Shipping:

Inventory:5,180
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Product details
Overview
AOD66620 from Alpha & Omega Semiconductor is a 60V, 58A N-channel Trench Power MOSFET using AlphaSGT™ technology, with RDS(ON) < 8.5 mΩ at VGS = 10 V and 100% UIS-tested for ruggedness in high-current switching applications such as synchronous rectification in ATX power supplies.
For engineers reviewing the AOD66620 datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge × RDS(ON) figure-of-merit (FOM), 100% Rg testing, and TO-252 package thermal performance for high-efficiency DC-DC conversion stages.
Technical Context
The AOD66620 employs AlphaSGT™ (Alpha Super Grid Topology) trench MOSFET architecture to achieve optimized cell density and reduced specific on-resistance. Its gate threshold voltage (2.4–3.6 V) enables reliable turn-on with standard 5 V or 10 V logic-level drive, while its low Ciss (1070 pF) and Crss (12 pF) support fast, low-noise switching.
Thermally, it features RθJC = 2.4 °C/W and RθJA = 50 °C/W (1 in² FR-4, 2 oz Cu), enabling high continuous power dissipation up to 60 W at TC = 25 °C. The device is rated for junction temperatures from –55 °C to +150 °C and supports avalanche energy of 60 mJ (L = 0.3 mH).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - Maximum drain-source blocking voltage for use in 48 V input or 12 V output SMPS rails |
| ID (VGS = 10 V) | 58 A - Continuous drain current capability at full gate drive, suitable for high-current secondary-side rectification |
| RDS(ON) (VGS = 10 V) | < 8.5 mΩ - Low conduction loss enabling >95% efficiency in 50–100 A load ranges with proper heatsinking |
| Qg (10 V) | 16–25 nC - Enables fast switching with moderate gate driver strength (e.g., 1–2 A peak) |
| EAS | 60 mJ - Confirmed unclamped inductive switching robustness for hard-switched topologies without snubbers |
| TJ, TSTG | –55 to +150 °C - Wide operating and storage range supporting industrial and computing environments |
Pinout & Package
Package: TO-252 (DPAK), surface-mount, single-die N-channel MOSFET with exposed drain pad for thermal enhancement.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| D (Drain) | Main current-carrying terminal, connected to exposed pad | Primary heat path to PCB copper; must be soldered to ≥1 in² 2 oz Cu thermal pad for rated RθJC |
| G (Gate) | Control electrode for channel formation | Low-input-capacitance node (Ciss = 1070 pF); requires low-inductance gate loop to minimize ringing |
| S (Source) | Reference node for gate drive and current return | Common source connection for Kelvin sensing or source-referenced gate drivers in synchronous buck designs |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ Technology | Enables lower RDS(ON) per die area vs. conventional trench MOSFETs, improving power density in compact PSU layouts |
| 100% UIS Tested | Each unit validated for unclamped inductive switching stress, eliminating need for external avalanche derating in flyback or LLC resonant converters |
| 100% Rg Tested | Guarantees gate resistance between 0.6–1.8 Ω, ensuring consistent switching speed and EMI behavior across production lots |
| RoHS & Halogen-Free | Complies with IPC-1752A material declaration requirements for consumer and enterprise computing end equipment |
Applications
| Synchronous Rectification in SMPS | ATX and Gaming Power Supplies |
|---|---|
Use Scenario: Secondary-side rectification in 5 V/12 V/24 V output rails of isolated forward or LLC resonant converters. IC Role / Device Role: N-channel power switch replacing Schottky diodes to reduce conduction losses and improve efficiency. Use Value: Achieves <1.5 W conduction loss at 50 A (vs. ~4 W for 40V Schottky), directly increasing full-load efficiency by 0.8–1.2%. | Use Scenario: High-current 12 V rail regulation in desktop PC ATX PSUs and high-end gaming PSUs with multi-phase VRMs. IC Role / Device Role: Primary-side high-side or secondary-side low-side switch in synchronous buck stages feeding CPU/GPU VRMs. Use Value: Supports 58 A continuous current with <8.5 mΩ RDS(ON), enabling stable 12 V/50 A delivery under transient load steps without thermal throttling. |
| Switching Applications | Industrial DC-DC Converters |
Use Scenario: High-frequency (200–500 kHz) hard-switched buck, boost, or half-bridge inverters in telecom and server power modules. IC Role / Device Role: Main switching element where low Qg/RDS(ON) FOM minimizes combined conduction and switching losses. Use Value: Total gate charge of 16–25 nC allows clean 20 ns turn-on/turn-off transitions with 2 A gate drivers, reducing switching loss by ~35% vs. legacy 12 mΩ MOSFETs. | Use Scenario: Isolated 48 V–12 V or 24 V–5 V DC-DC conversion in programmable logic controllers (PLCs) and motor drives. IC Role / Device Role: Output rectifier or primary switch in wide-input-range offline converters requiring extended temperature operation. Use Value: Rated for –55 °C to +150 °C junction temperature and 100% UIS tested, ensuring reliability in unventilated enclosures with ambient up to 85 °C. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF6642 | RDS(ON) = 9.2 mΩ @ 10 V; Qg = 22 nC; TO-252 package; same VDS rating | Higher conduction loss and slightly slower switching due to higher Qg; less optimized FOM | Acceptable for cost-sensitive, lower-efficiency designs where 0.7 mΩ RDS(ON) margin is acceptable |
| SiR626DP | RDS(ON) = 7.0 mΩ @ 10 V; Qg = 28 nC; PowerPAK SO-8 package; 60 V rating | Lower RDS(ON) but higher Qg and different footprint; no 100% UIS test data published | Preferred for space-constrained layouts needing sub-7 mΩ performance, but requires revalidation of avalanche robustness |
Compared with IRF6642 and SiR626DP, the AOD66620 delivers the best balance of ultra-low RDS(ON), moderate gate charge, and factory-verified UIS ruggedness in the TO-252 form factor-making it optimal for high-reliability, high-efficiency 60 V synchronous rectifiers where thermal management and transient robustness are critical.
Availability
AOD66620 is available at Aetrix Electronics and suitable for ATX power supplies, industrial DC-DC converters, and synchronous rectification circuits requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.
Supply support for AOD66620 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AOD66620 belongs to AOS' AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-current, high-frequency switching applications demanding low RDS(ON), low gate charge, and proven avalanche ruggedness.
FAQ
What is the maximum continuous drain current rating for the AOD66620 at 100°C case temperature?
The AOD66620 supports 52 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This de-rating reflects thermal limits imposed by its RθJC = 2.4 °C/W and maximum junction temperature of 150 °C. Designers must ensure adequate PCB copper area and airflow to sustain this current in real-world conditions.
Does the AOD66620 have a built-in body diode, and what are its key characteristics?
Yes, the AOD66620 integrates a parasitic body diode with VSD = 0.7–1.0 V at IS = 1 A and reverse recovery charge Qrr = 58 nC at IF = 20 A, di/dt = 500 A/ms. Its trr = 18 ns enables use in synchronous rectification without external Schottky diodes, though layout care is needed to minimize commutation losses.
Is the AOD66620 suitable for 5 V gate drive applications?
The AOD66620 has a gate threshold voltage VGS(th) of 2.4–3.6 V, making it compatible with 5 V logic-level drive. However, its RDS(ON) rises to <11 mΩ at VGS = 8 V and increases further at 5 V-so full 10 V drive is recommended to achieve the rated <8.5 mΩ and optimize efficiency in high-current applications.
What thermal design guidance applies to the AOD66620 in TO-252 package?
For the AOD66620 in TO-252, AOS specifies RθJA = 50 °C/W on 1 in² FR-4 with 2 oz Cu, and RθJC = 2.4 °C/W. To meet thermal targets, the exposed drain pad must be fully soldered to a minimum 1 in² thermal pad with ≥4 thermal vias to inner ground planes. Use of thermal interface material is not applicable-direct PCB conduction is the intended cooling path.
How does the 100% Rg testing benefit AOD66620 users in production?
100% Rg testing ensures every AOD66620 unit has gate resistance between 0.6–1.8 Ω, guaranteeing consistent turn-on/turn-off timing, predictable EMI signatures, and repeatable gate driver sizing across manufacturing lots-critical for high-volume power supply qualification and long-term field reliability without post-production screening.
AOD66620 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Ta), 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 8V, 10V
- Rds On (Max) @ Id, Vgs:
- 8.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 3.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1070 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 52W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252 (DPAK)
AOD66620 FAQ
1.How can I place an order for AOD66620 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOD66620 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOD66620 reliable?
The price and inventory of AOD66620 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOD66620 is usually 5 days.
3.What payment methods are accepted for AOD66620?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOD66620 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOD66620?
AOD66620 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOD66620 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOD66620?
For technical support, including AOD66620 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOD66620 requirements.
6.How does Aetrix verify that AOD66620 is sourced from the original manufacturer or authorized distributors?
All AOD66620 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOD66620 meets industry standards.
7.What is the process for return or replacement of AOD66620?
All AOD66620 units undergo pre-shipment inspection (PSI). If there is an issue with AOD66620, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOD66620 part is unused and in its original packaging.
Return procedure for AOD66620:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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