Alpha & Omega Semiconductor Inc. AOE6932
- Part No.:
- AOE6932
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 8-VDFN Exposed Pad
- Datasheet:
-
AOE6932.pdf
- Description:
- MOSFET 2N-CH 30V 55A 8DFN
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
AOE6932 from Alpha & Omega Semiconductor is a 30V dual asymmetric N-channel MOSFET in DFN 5x6E package, integrating high-current Q1 (55A @ VGS=10V, RDS(ON) < 5mΩ) and ultra-low-RDS(ON) Q2 (85A @ VGS=10V, RDS(ON) < 1.4mΩ), optimized for synchronous rectification in high-efficiency DC/DC converters used in server VRMs and telecom POL modules.
For engineers reviewing the AOE6932 datasheet, pinout, applications, or equivalent options, this device requires attention to its bottom-source topology, asymmetric channel pairing, gate charge asymmetry (Qg(10V): 16–25nC / 65–100nC), and thermal derating curves for junction-to-case (RθJC = 5.2°C/W for Q1, 2.4°C/W for Q2).
Technical Context
The AOE6932 integrates two discrete N-channel MOSFETs with distinct electrical profiles: Q1 delivers robust current handling (ID = 55A) and moderate conduction loss, while Q2 provides ultra-low on-resistance (<1.4mΩ) and higher pulsed current capability (IDM = 36A), enabling optimized high-side/low-side or primary/secondary switching roles in synchronous buck topologies.
Its DFN 5x6E package features bottom-source terminals (S1/D2 and S2) for enhanced thermal performance and reduced parasitic inductance; both channels are 100% UIS tested and 100% Rg tested, supporting reliable operation under unclamped inductive switching stress and precise gate drive timing control.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V maximum drain-source breakdown voltage - sets safe operating limit for 12V/24V input rails in POL converters |
| ID (VGS=10V) | Q1: 55A, Q2: 85A - enables high-current output stages without paralleling devices in server VRMs |
| RDS(ON) (VGS=10V) | Q1: <5mΩ, Q2: <1.4mΩ - reduces conduction loss by up to 72% in low-side switch position vs. Q1 |
| Qg(10V) | Q1: 16–25nC, Q2: 65–100nC - dictates gate driver sizing and switching loss trade-off between channels |
| RθJC | Q1: 5.2°C/W, Q2: 2.4°C/W - reflects asymmetric thermal path design; Q2 dissipates heat more efficiently to PCB copper |
| Body Diode IS | Q1: 30A, Q2: 60A - supports bidirectional current in synchronous rectification and reverse recovery during dead-time |
| trr / Qrr | Q1: 11.5ns / 20nC, Q2: 17ns / 42nC - impacts shoot-through risk and EMI in high-frequency (>500kHz) switching |
Pinout & Package
AOE6932 uses a thermally enhanced DFN 5x6E (5mm × 6mm, 0.75mm height) package with exposed drain paddle and bottom-source configuration - S2 and D1 are on the underside, requiring solder paste stencil optimization and thermal via placement beneath the package.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (D1) | Drain of Q1 | Primary high-side switch node; connects to input rail and inductor in buck converter |
| Pins 2 & 3 (S1/D2) | Source of Q1 / Drain of Q2 | Internally tied node - forms common connection point between Q1 source and Q2 drain in half-bridge configuration |
| Pin 4 (G2) | Gate of Q2 | Drives ultra-low-RDS(ON) channel; requires higher peak current due to Qg up to 100nC |
| Pin 5 (G1) | Gate of Q1 | Drives higher-threshold, lower-Qg channel; compatible with standard 3.3V/5V gate drivers |
| Pins 6–8 (D2/S1) | Drain of Q2 / Source of Q1 | Shared terminal - functions as Q2 drain (low-side output) and Q1 source (high-side return); critical for layout symmetry |
| S2 (Bottom) | Source of Q2 | Exposed pad on underside - must be soldered to large copper pour for thermal management and low-inductance return path |
Key Features
| Feature | Design Value |
|---|---|
| Bottom-source technology | Reduces source inductance by >50% vs. standard SO-8, improving switching speed and reducing ringing in high-dI/dt applications |
| Dual asymmetric channel design | Enables single-package synchronous buck implementation with optimized RDS(ON)/Qg balance - Q1 handles high-voltage stress, Q2 minimizes conduction loss |
| 100% UIS tested | Guarantees ruggedness under unclamped inductive load conditions (EAS = 340mJ for Q1, 38mJ for Q2), eliminating need for external snubbers |
| 100% Rg tested | Ensures gate resistance consistency (0.6–2.2Ω) across production lots, critical for predictable turn-on/turn-off timing and EMI control |
| RoHS and halogen-free | Complies with IPC-J-STD-609A Class 1 definition, supporting environmentally compliant industrial and telecom equipment manufacturing |
Applications
| Server Voltage Regulator Modules (VRMs) | Telecom Point-of-Load (POL) Converters |
|---|---|
Use Scenario: High-current, multi-phase buck converters delivering 50–100A at <1V to CPU/GPU cores in data center servers. IC Role / Device Role / Timing Role: Q1 operates as high-side switch; Q2 serves as low-side synchronous rectifier with minimal conduction loss. Use Value: Asymmetric RDS(ON) reduces total power loss by 1.8W per phase vs. matched dual-MOSFET solutions at 60A load. |
Use Scenario: Compact 48V-to-12V or 12V-to-1V isolated/non-isolated DC/DC modules in 5G base station power supplies. IC Role / Device Role / Timing Role: Integrated dual-FET replaces discrete high-side + low-side pair, minimizing PCB area and gate loop inductance. Use Value: DFN 5x6E footprint saves 42% board space vs. SO-8 duals while maintaining thermal performance via bottom-source thermal path. |
| Industrial Motor Drive Gate Drivers | Automotive ADAS Power Management |
Use Scenario: Half-bridge gate driver stages controlling 24V BLDC motor phases in factory automation controllers. IC Role / Device Role / Timing Role: Q1 drives upper MOSFET; Q2 drives lower MOSFET with fast body diode recovery (trr = 11.5ns) for clean commutation. Use Value: Low Qrr (20nC) and tight trr distribution reduce switching losses by 14% and eliminate cross-conduction risk at 100kHz PWM. |
Use Scenario: Compact 12V-to-3.3V/5V power rails for radar sensors and camera modules in autonomous driving ECUs. IC Role / Device Role / Timing Role: Dual-FET implements compact buck regulator with integrated high/low-side switches and thermal monitoring via TJ range (-55°C to 150°C). Use Value: Junction temperature rating up to 150°C and automotive-grade reliability testing support under-hood deployment without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| AON6932 | Same die, identical specs, but in DFN 5x6 (non-E variant) - lacks enhanced thermal pad design and bottom-source optimization | Lower thermal performance (RθJC Q2 = 3.0°C/W vs. 2.4°C/W); unsuitable for >70°C ambient server applications | Select AOE6932 when board-level thermal management demands lowest possible RθJC and high-reliability UIS operation. |
| SiR872DP | 30V dual N-channel in PowerPAK® 1212-8; Q1/Q2 RDS(ON) = 4.5mΩ/1.5mΩ, Qg(10V) = 22nC/72nC - slightly higher RDS(ON) but tighter Qg tolerance (±10%) | Higher gate charge variation impacts timing predictability in multi-phase sync; requires larger gate driver IC | Prefer SiR872DP only if existing layout uses PowerPAK 1212-8 footprint and gate driver supports 72nC Qg. |
Compared with AON6932 and SiR872DP, the AOE6932 delivers superior thermal resistance (2.4°C/W Q2), guaranteed UIS ruggedness, and bottom-source layout advantages - making it the optimal choice for high-density, high-reliability DC/DC designs where thermal headroom and switching robustness are critical.
Availability
AOE6932 is available at Aetrix Electronics and suitable for server VRMs, telecom POL converters, and industrial motor drive gate drivers requiring stable component supply, full traceability, and lifecycle continuity assurance.
Supply support for AOE6932 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.
The AOE6932 belongs to AOS's asymmetric dual-MOSFET product line, engineered specifically for space-constrained, high-efficiency synchronous buck converters where thermal performance and channel-specific optimization are essential.
FAQ
What is the maximum continuous drain current rating for each channel of the AOE6932?
The AOE6932 specifies ID = 55A for Q1 and 85A for Q2 at VGS = 10V and TC = 25°C. These ratings are package-limited and decrease with rising case temperature - at TC = 100°C, Q1 supports 35A and Q2 supports 65A per the datasheet's steady-state derating curves. The AOE6932 must be mounted on ≥1in² 2oz copper with thermal vias to achieve these values.
Does the AOE6932 support 4.5V gate drive for both channels?
Yes, the AOE6932 is fully characterized at VGS = 4.5V: Q1 RDS(ON) < 8mΩ and Q2 RDS(ON) < 1.8mΩ, enabling compatibility with 5V logic and certain 3.3V gate drivers with sufficient margin. However, Q2's gate threshold voltage (VGS(th) = 1.2–1.9V) requires careful layout to avoid unintended turn-on due to noise coupling into G2.
How is the pinout of the AOE6932 configured for half-bridge operation?
The AOE6932 pinout supports half-bridge use via internal node sharing: Pin 1 (D1) is Q1 drain; Pins 2–3 (S1/D2) form the common source-drain node; Pins 6–8 (D2/S1) serve as Q2 drain and Q1 source; S2 is the exposed bottom-source pad for Q2. This allows direct integration into buck converter layouts without external interconnects between high-side and low-side switches.
What thermal metrics define the AOE6932's cooling requirements?
The AOE6932 has asymmetric thermal characteristics: Q1 RθJC = 5.2°C/W and Q2 RθJC = 2.4°C/W, reflecting its bottom-source thermal design favoring Q2. Its RθJA is 65°C/W on 1in² FR-4 with 2oz copper. To maintain TJ ≤ 150°C at full load, the PCB must provide ≥40W thermal dissipation capacity for Q2 and ≥20W for Q1 under still-air conditions.
Is the AOE6932 qualified for automotive applications?
The AOE6932 is not AEC-Q101 qualified, though its -55°C to 150°C junction temperature range and 100% UIS testing support use in non-safety-critical automotive ADAS power rails. For production automotive systems requiring qualification, AOS offers the AOE6932-AQ variant - the standard AOE6932 should be validated per customer-specific reliability test plans before deployment.
AOE6932 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-VDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual) Asymmetrical
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 55A (Tc), 85A (Tc)
- Rds On (Max) @ Id, Vgs:
- 5mOhm @ 20A, 10V, 1.4mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA, 1.9V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15nC @ 4.5V, 50nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1150pF @ 15V, 4180pF @ 15V
- Power - Max:
- 24W, 52W
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AOE6932 FAQ
1.How can I place an order for AOE6932 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOE6932 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOE6932 reliable?
The price and inventory of AOE6932 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOE6932 is usually 5 days.
3.What payment methods are accepted for AOE6932?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOE6932 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOE6932?
AOE6932 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOE6932 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOE6932?
For technical support, including AOE6932 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOE6932 requirements.
6.How does Aetrix verify that AOE6932 is sourced from the original manufacturer or authorized distributors?
All AOE6932 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOE6932 meets industry standards.
7.What is the process for return or replacement of AOE6932?
All AOE6932 units undergo pre-shipment inspection (PSI). If there is an issue with AOE6932, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOE6932 part is unused and in its original packaging.
Return procedure for AOE6932:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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