Alpha & Omega Semiconductor Inc. AOI2N60

Overview

AOI2N60 from Alpha & Omega Semiconductor is a 600 V, 2 A N-channel enhancement-mode MOSFET in TO-251AA (IPAK) package, featuring 3.8 Ω R_DS(on) at V_GS = 10 V, 100% UIS-rated ruggedness, and 100% avalanche-tested capability for reliable switching in offline SMPS and AC-DC adapters.

For engineers reviewing the AOI2N60 datasheet, pinout, applications, or equivalent options, key selection criteria include its 600 V blocking voltage, 2 A continuous drain current, 3.8 Ω on-resistance, TO-251AA thermal performance, and avalanche energy rating of 45 mJ - critical for flyback and PFC stage design validation.

Technical Context

The AOI2N60 operates as a high-voltage power switch in hard-switched topologies, with gate threshold voltage (V_GS(th)) specified at 2.0–4.0 V and total gate charge (Q_g) of 9.5 nC at V_GS = 10 V, enabling efficient drive with standard PWM controllers. Its body diode exhibits reverse recovery time (t_rr) of 120 ns and Q_rr of 120 nC, supporting moderate-frequency operation up to 100 kHz.

Thermal resistance R_θJA is 62.5 °C/W (PCB mount, 1 in² copper), and R_θJC is 2.5 °C/W, confirming suitability for compact, convection-cooled offline power supplies where junction temperature control is essential under sustained 2 A load conditions.

Key Specifications

Pinout & Package

AOI2N60 uses the TO-251AA (IPAK) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S). The exposed drain pad provides low thermal resistance path to PCB copper, and the package complies with JEDEC TO-252 (AA) mechanical standards per document PO-00052 Rev F.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with STP2NK60Z and FQP2N60, the AOI2N60 delivers lower R_DS(on), tighter gate charge, and verified UIS ruggedness - making it optimal for space-constrained, high-reliability AC-DC adapters requiring long-term field stability.

Availability

AOI2N60 is available at Aetrix Electronics and suitable for AC-DC adapters, flyback SMPS, and LED drivers requiring stable component supply, consistent parametric performance, and long-lifecycle support.

Supply support for AOI2N60 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for power conversion and motor control.

The AOI2N60 belongs to AOS's high-voltage discrete MOSFET product line, engineered specifically for cost-effective, reliable primary-side switching in sub-30 W offline power supplies.

FAQ

What is the maximum junction temperature rating for AOI2N60?

The AOI2N60 has a maximum rated junction temperature (T_J) of 150 °C, validated under steady-state thermal conditions with proper PCB copper area and ambient airflow. This rating allows operation in enclosed environments up to 70 °C ambient when mounted on 1 in² FR-4 copper with 2 oz thickness. Derating curves in the AOI2N60 datasheet confirm 2 A continuous current is sustainable at T_A = 50 °C.

Does AOI2N60 support gate drive at 5 V logic level?

No - AOI2N60 is not a logic-level MOSFET. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, but full enhancement and guaranteed 3.8 Ω R_DS(on) require V_GS ≥ 10 V. Driving AOI2N60 with only 5 V results in significantly higher on-resistance (>10 Ω), excessive heating, and potential thermal runaway. Always use a 10–15 V gate driver for AOI2N60.

Is AOI2N60 RoHS compliant and halogen-free?

Yes - AOI2N60 is RoHS 2011/65/EU compliant and certified halogen-free per IEC 61249-2-21. Lead-free plating and bromine-free molding compound meet AEC-Q101 stress test requirements for reliability. Full compliance documentation, including SGS test reports and material declarations, is available upon request for AOI2N60.

Can AOI2N60 replace STP2NK60Z in an existing design?

AOI2N60 can serve as a functional alternative to STP2NK60Z due to identical pinout (TO-251AA), voltage/current ratings, and package footprint. However, AOI2N60's lower R_DS(on) (3.8 Ω vs. 4.2 Ω) and reduced Q_g (9.5 nC vs. 11 nC) may alter gate drive timing and reduce conduction loss. Layout changes are not required, but gate resistor values should be re-verified for optimal switching behavior in the AOI2N60 implementation.

What is the recommended PCB land pattern for AOI2N60?

The AOI2N60 requires a JEDEC-compliant TO-251AA land pattern per document PO-00052 Rev F: three pads sized per 3×R0.45 mm fillet radius, with the central drain pad measuring 4.95–5.46 mm wide and extending ≥10 mm in length for thermal relief. Minimum 1 in² copper pour connected to the drain pad is recommended to maintain R_θJA ≤ 62.5 °C/W for AOI2N60.