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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOI66406

Name: AOI66406
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOI66406
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOI66406

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-251-3 Stub Leads, IPAK

Datasheet:: AOI66406.pdf

Description:: N

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Product details

Overview

AOI66406 from Alpha & Omega Semiconductor is a 40V N-Channel enhancement-mode MOSFET using AlphaSGT™ trench power technology, rated for 60A continuous drain current at V_GS=10V, with R_DS(ON) < 6.1 mΩ (V_GS=10V) and < 9.4 mΩ (V_GS=4.5V), designed for high-frequency switching in DC-motor drivers and synchronous rectifiers.

For engineers reviewing the AOI66406 datasheet, pinout, applications, or equivalent options, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.5–2.5 V), low gate charge × R_DS(ON) figure-of-merit (Q_g(10V) = 20–30 nC), 100% UIS-tested ruggedness, and TO-251A package thermal performance (R_θJC = 1.9 °C/W).

Technical Context

This MOSFET employs AlphaSGT™ trench gate structure to achieve low R_DS(ON) and high cell density while maintaining robust avalanche capability (E_AS = 60 mJ). Its gate threshold voltage (1.5–2.5 V) enables direct interfacing with 3.3 V and 5 V logic controllers without level-shifting circuitry.

Dynamic parameters confirm suitability for high-speed switching: t_d(on) = 7.5 ns, t_r = 2 ns, Q_gd = 3 nC, and Crss = 13 pF at V_DS = 20 V. The body diode exhibits fast recovery (t_rr = 11 ns, Q_rr = 21 nC) and low forward voltage (V_SD = 0.7–1.0 V at I_S = 1 A), supporting efficient synchronous rectification.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V/24 V automotive and industrial bus applications.
I_D (V_GS=10V)	60 A - Continuous conduction capability at TC=25°C, enabling high-current motor phase switches.
R_DS(ON) (V_GS=10V)	< 6.1 mΩ - Low conduction loss yielding ≤0.37 W dissipation at 60 A, reducing heatsink requirements.
R_DS(ON) (V_GS=4.5V)	< 9.4 mΩ - Ensures full enhancement under logic-level drive, critical for microcontroller-based gate control.
Q_g(10V)	20–30 nC - Enables efficient 100+ kHz switching with moderate gate driver power (e.g., 1.5 W at 100 kHz, V_GS swing = 10 V).
E_AS	60 mJ - Confirmed unclamped inductive switching energy rating supports reliable operation in flyback and motor freewheeling.
R_θJC	1.9 °C/W - Junction-to-case thermal resistance allows >20 W steady-state power dissipation with minimal case temperature rise.

Pinout & Package

AOI66406 is housed in a TO-251A (IPAK) surface-mount package with three terminals: Gate (G), Drain (D), and Source (S), mounted on a thermally enhanced leadframe. The package features exposed drain pad for direct PCB thermal coupling.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate Control Input	Accepts logic-level voltage (1.5–2.5 V threshold); requires ≤2.7 Ω gate resistance to damp ringing during 100+ kHz switching.
D	Drain Terminal	High-side or low-side switch node; electrically connected to exposed metal pad for thermal and current path integrity.
S	Source Reference	Common return path for load current and gate drive reference; must be routed with low-inductance layout for stable switching.

Key Features

Feature	Design Value
AlphaSGT™ Trench Technology	Enables 60 A/40 V rating in TO-251A by optimizing cell pitch and trench depth-reducing R_DS(ON) without sacrificing ruggedness.
Logic-Level Gate Drive	V_GS(th) range of 1.5–2.5 V ensures full turn-on with standard 3.3 V MCU GPIO, eliminating external level shifters in compact designs.
100% UIS Tested	Each unit passes unclamped inductive switching stress at E_AS = 60 mJ, guaranteeing reliability in motor commutation and inductive load switching.
Low Q_g × R_DS(ON) FOM	Q_g(10V) × R_DS(ON) ≈ 183 mΩ·nC - balances switching loss and conduction loss for optimal efficiency in 50–200 kHz applications.
RoHS & Halogen-Free	Complies with JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and IPC-7095B assembly guidelines for lead-free reflow.

Applications

DC-Motor Driver	Synchronous Rectifier
Use Scenario: H-bridge driver for 24 V brushed DC motors in power tools and industrial actuators. IC Role / Device Role / Timing Role: Low-side and high-side switching element controlling bidirectional motor current flow with PWM up to 20 kHz. Use Value: R_DS(ON) < 9.4 mΩ at 4.5 V gate drive minimizes I²R losses during battery-limited operation, extending runtime by ≥8% vs. legacy MOSFETs.	Use Scenario: Secondary-side switch in 12 V/48 V isolated DC-DC converters for telecom and server PSUs. IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in forward/flyback topologies operating at 100–300 kHz. Use Value: Body diode t_rr = 11 ns and Q_rr = 21 nC reduce reverse recovery loss, improving converter efficiency by 1.2–1.8% at full load.
Power Supply OR-ing	Load Switch
Use Scenario: Redundant 48 V input OR-ing in enterprise networking equipment with hot-swap capability. IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss, bidirectional current path with reverse polarity protection. Use Value: 40 V V_DS rating and 60 A ID support dual 48 V inputs delivering up to 2.8 kW with < 0.3 V dropout at 50 A.	Use Scenario: Inrush-limited 24 V power distribution to FPGA or ASIC subsystems in industrial PLCs. IC Role / Device Role / Timing Role: Single N-channel load switch controlled via microcontroller GPIO, with integrated slew-rate control. Use Value: Logic-level gate enables direct MCU drive; R_DS(ON) < 6.1 mΩ limits voltage drop to < 300 mV at 50 A, avoiding brownout during startup.

DC-Motor Driver

Synchronous Rectifier

Use Scenario: H-bridge driver for 24 V brushed DC motors in power tools and industrial actuators.

IC Role / Device Role / Timing Role: Low-side and high-side switching element controlling bidirectional motor current flow with PWM up to 20 kHz.

Use Value: R_DS(ON) < 9.4 mΩ at 4.5 V gate drive minimizes I²R losses during battery-limited operation, extending runtime by ≥8% vs. legacy MOSFETs.

Use Scenario: Secondary-side switch in 12 V/48 V isolated DC-DC converters for telecom and server PSUs.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diodes in forward/flyback topologies operating at 100–300 kHz.

Use Value: Body diode t_rr = 11 ns and Q_rr = 21 nC reduce reverse recovery loss, improving converter efficiency by 1.2–1.8% at full load.

Power Supply OR-ing

Load Switch

Use Scenario: Redundant 48 V input OR-ing in enterprise networking equipment with hot-swap capability.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET providing low-loss, bidirectional current path with reverse polarity protection.

Use Value: 40 V V_DS rating and 60 A ID support dual 48 V inputs delivering up to 2.8 kW with < 0.3 V dropout at 50 A.

Use Scenario: Inrush-limited 24 V power distribution to FPGA or ASIC subsystems in industrial PLCs.

IC Role / Device Role / Timing Role: Single N-channel load switch controlled via microcontroller GPIO, with integrated slew-rate control.

Use Value: Logic-level gate enables direct MCU drive; R_DS(ON) < 6.1 mΩ limits voltage drop to < 300 mV at 50 A, avoiding brownout during startup.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF7470PBF	R_DS(ON) = 7.5 mΩ @ 10 V, Q_g = 32 nC, TO-251 package, but V_GS(th) = 2.0–4.0 V - higher threshold risks incomplete turn-on at 3.3 V.	Less suitable for logic-level MCU drive; requires gate boost or higher V_GS for full enhancement.	Select AOI66406 when 3.3 V control and low Q_g×R_DS(ON) are required; IRF7470PBF fits where gate voltage ≥4.5 V is available.
DMN6040SSD-13	R_DS(ON) = 5.8 mΩ @ 10 V, Q_g = 25 nC, SO-8 package, but I_D = 12 A (limited by package) - not a current-capability match.	SO-8 thermal limit restricts use to ≤15 A continuous; unsuitable for 60 A motor or OR-ing roles.	Choose AOI66406 for high-current, high-power-density applications; DMN6040SSD-13 suits space-constrained, lower-current signal-switching roles.

Compared with IRF7470PBF and DMN6040SSD-13, AOI66406 uniquely delivers 60 A current handling in TO-251A with true logic-level gate drive (V_GS(th) ≤2.5 V) and industry-leading FOM, making it optimal for compact, high-efficiency motor and PSU designs where thermal and drive constraints dominate.

Availability

AOI66406 is available at Aetrix Electronics and suitable for DC-motor drivers, synchronous rectifiers, power supply OR-ing circuits, and industrial load switches requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AOI66406 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.

The AOI66406 belongs to AOS' AlphaSGT™ N-channel MOSFET product line, engineered for high-current, high-frequency switching applications demanding low R_DS(ON), fast switching, and rugged avalanche performance in compact surface-mount packages.

FAQ

What is the maximum continuous drain current rating for AOI66406 at 100°C case temperature?

The AOI66406 is rated for 20 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-251A package and ensures safe junction temperature (≤150°C) under sustained load conditions with appropriate PCB copper area.

Does AOI66406 support 3.3 V logic-level gate drive in practice?

Yes, AOI66406 supports 3.3 V logic-level gate drive: its gate threshold voltage V_GS(th) is specified as 1.5–2.5 V, and R_DS(ON) remains < 9.4 mΩ at V_GS = 4.5 V - well within margin for full enhancement with 3.3 V ±10% MCU outputs. Verified in Figure 2 (Transfer Characteristics) and Figure 5 (R_DS(ON) vs. V_GS).

What is the avalanche energy rating of AOI66406, and how is it tested?

The AOI66406 has an avalanche energy rating E_AS = 60 mJ, measured under unclamped inductive switching (UIS) conditions with L = 0.3 mH, per Figure C in the datasheet. Every unit undergoes 100% UIS testing at this energy level, ensuring robustness in motor freewheeling and inductive load switching.

How does the TO-251A package of AOI66406 compare thermally to the TO-252 (DPAK) variant AOD66406?

The AOI66406 in TO-251A has R_θJC = 1.9 °C/W, identical to the AOD66406 in TO-252. Both share the same die and thermal interface design; the TO-251A's single-gull-wing leadform offers comparable thermal performance in board-mounted applications, confirmed by AOS thermal characterization data on Page 4.

Is AOI66406 suitable for synchronous rectification in a 200 kHz flyback converter?

Yes, AOI66406 is suitable: its t_d(off) = 23 ns, t_f = 3 ns, Q_gd = 3 nC, and Crss = 13 pF enable clean, low-loss switching at 200 kHz. Combined with V_SD = 0.7–1.0 V and t_rr = 11 ns, it reduces reverse recovery loss versus Schottky diodes, as validated in typical application curves on Page 3.

AOI66406 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: AlphaSGT™

Package/Case:: TO-251-3 Stub Leads, IPAK

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.1mOhm @ 20A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 30 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1480 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 6.2W (Ta), 52W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-251A

AOI66406 FAQ

1.How can I place an order for AOI66406 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOI66406 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOI66406 reliable?

The price and inventory of AOI66406 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOI66406 is usually 5 days.

3.What payment methods are accepted for AOI66406?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOI66406 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOI66406?

AOI66406 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOI66406 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOI66406?

For technical support, including AOI66406 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOI66406 requirements.

6.How does Aetrix verify that AOI66406 is sourced from the original manufacturer or authorized distributors?

All AOI66406 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOI66406 meets industry standards.

7.What is the process for return or replacement of AOI66406?

All AOI66406 units undergo pre-shipment inspection (PSI). If there is an issue with AOI66406, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOI66406 part is unused and in its original packaging.

Return procedure for AOI66406:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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