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Alpha & Omega Semiconductor Inc. AOK060V65X2
- Part No.:
- AOK060V65X2
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
AOK060V65X2.pdf
- Description:
- 650V SILICON CARBIDE MOSFET
- Quantity:
- Payment:
- Shipping:
Inventory:240
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Product details
Overview
AOK060V65X2 from Alpha and Omega Semiconductor is a 650V silicon carbide (αSiC) power MOSFET in TO-247-3L package, delivering 60 mΩ typical RDS(ON), 90A pulsed drain current, and 74.3 nC body diode Qrr. It enables high-efficiency switching in EV chargers, solar inverters, and industrial UPS systems.
For engineers reviewing the AOK060V65X2 datasheet, pinout, applications, or equivalent options, key selection criteria include its 1.00°C/W RθJC, 15V recommended gate drive, 12 µJ EOSS, fast 23 ns trr, and 100% UIS-tested ruggedness for high-reliability power conversion designs.
Technical Context
This αSiC MOSFET employs proprietary wide-bandgap technology to achieve low conduction loss and fast switching with minimal gate charge (39.4 nC total) and low Crss (16 pF). Its optimized VGS(OP) of –5/+15 V ensures stable turn-on while avoiding overstress under transient conditions.
The device integrates a low-Qrr body diode (74.3 nC) and exhibits robust avalanche capability (420 mJ EAS). Thermal performance is defined by RθJC = 1.00°C/W (typ), enabling high-power operation up to 175°C junction temperature with proper heatsinking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 650 V - Withstands DC bus voltages up to 650 V in boost PFC and inverter stages without derating. |
| RDS(ON), typ | 60 mΩ at VGS = 15 V, TJ = 25°C - Enables low conduction loss in 3–10 kW power stages. |
| Qrr | 74.3 nC - Reduces diode recovery loss and EMI in hard-switched totem-pole PFC and bidirectional converters. |
| EOSS | 12 µJ at 400 V - Low output capacitance energy minimizes turn-on loss during zero-voltage switching transitions. |
| trr | 23 ns - Supports >100 kHz switching frequencies with predictable diode commutation timing. |
| RθJC | 1.00°C/W (typ) - Allows direct mounting to heatsink for thermal management in compact industrial modules. |
| IDM | 90 A - Sustains short-duration overload currents in motor drive fault conditions and UPS peak loads. |
Pinout & Package
Package: TO-247-3L - Through-hole, isolated tab, three-terminal power package with industry-standard footprint and thermal interface capability.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control input | Accepts –5/+15 V gate drive; low 2.2 Ω internal RG supports fast edge rates with minimal external gate resistance. |
| D (Drain) | High-side power terminal | Connected to DC bus or transformer primary; rated for 650 V blocking and 90 A pulsed current. |
| S (Source) | Power return / reference node | Serves as common source for gate drive loop and current sensing; low-inductance path critical for dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| αSiC MOSFET technology | Enables higher operating temperature (TJ up to 175°C) and lower switching losses vs. silicon counterparts. |
| Low RDS(ON) × Qg figure-of-merit | 60 mΩ × 39.4 nC = 2.36 Ω·nC - Optimized for high-frequency, high-efficiency SMPS and solar MPPT stages. |
| 100% UIS tested | Guarantees single-pulse avalanche ruggedness to 420 mJ, eliminating need for external snubbers in inductive load switching. |
| Optimized gate drive voltage | VGS(OP) = –5/+15 V balances threshold margin, Miller immunity, and safe operating area without overdriving. |
| Low Crss (16 pF) | Reduces Miller-induced false turn-on risk in high-dV/dt half-bridge configurations, improving system reliability. |
Applications
| EV Charger | Solar Inverter |
|---|---|
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11–22 kW on-board and off-board chargers. IC Role / Device Role / Timing Role: Primary switching device in totem-pole PFC and isolated DC/DC LLC stages. Use Value: 74.3 nC Qrr and 23 ns trr minimize body diode conduction loss during ZVS transitions, increasing efficiency above 98%. |
Use Scenario: String-level DC/AC inversion in residential and commercial photovoltaic systems. IC Role / Device Role / Timing Role: High-side switch in three-phase IGBT/SiC hybrid or full-SiC inverter bridges. Use Value: 650 V rating and 1.00°C/W RθJC support 1500 V DC string inputs with compact heatsink integration and extended lifetime at 65°C ambient. |
| Industrial UPS | Motor Drive |
Use Scenario: Online double-conversion UPS with battery backup for data centers and factory automation. IC Role / Device Role / Timing Role: Output inverter switch handling 400 V AC line regeneration and battery charging cycles. Use Value: 90 A IDM and 420 mJ EAS withstand short-circuit events and grid transients without failure, meeting UL 1778 fault ride-through requirements. |
Use Scenario: Variable-frequency drives for HVAC compressors, pumps, and conveyors in harsh industrial environments. IC Role / Device Role / Timing Role: Inverter leg switch operating at 8–16 kHz PWM with regenerative braking capability. Use Value: 175°C maximum junction temperature and low RDS(ON) drift enable continuous operation in sealed enclosures without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar SiC MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| C3M0065065K (Wolfspeed) | Same 650 V/65 mΩ rating but TO-247-4L package with Kelvin source; 37.5 nC Qg; slightly higher Ciss (1220 pF). | Better high-frequency gate control due to Kelvin source; requires 4-pin PCB layout and gate driver with separate source return. | Select when optimizing for <100 kHz ZVS operation and lowest possible Eon; avoid if redesigning gate layout is not feasible. |
| STP65N6F7 (STMicroelectronics) | 650 V/65 mΩ silicon superjunction MOSFET; higher Qrr (125 nC); slower trr (65 ns); max TJ = 150°C. | Limited to ≤65 kHz operation; requires larger heatsink due to higher conduction + switching loss; no inherent avalanche rating. | Select only for cost-sensitive, lower-frequency (<50 kHz), non-UIS-critical applications where SiC ROI is not justified. |
Compared with C3M0065065K, AOK060V65X2 offers simpler 3-pin layout and lower EOSS (12 µJ vs. 14.2 µJ), while STP65N6F7 trades SiC performance for legacy compatibility and lower unit cost-making AOK060V65X2 optimal for new 65–100 kHz industrial power designs requiring ruggedness and thermal headroom.
Availability
AOK060V65X2 is available at Aetrix Electronics and suitable for EV charger, solar inverter, and industrial UPS applications requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for AOK060V65X2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha and Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and SiC devices for power conversion and management.
The AOK060V65X2 belongs to AOS' αSiC family, engineered specifically for high-efficiency, high-reliability 650 V power stages in renewable energy, industrial, and electric vehicle infrastructure.
FAQ
What is the maximum recommended gate-source voltage for continuous operation of the AOK060V65X2?
The AOK060V65X2 has a recommended operating gate-source voltage range of –5 V to +15 V per the datasheet Absolute Maximum Ratings table. This range ensures reliable turn-on while maintaining gate oxide integrity and minimizing Miller-induced shoot-through risk. Exceeding +15 V risks permanent gate degradation, and operation below –5 V may compromise reverse conduction stability in synchronous rectification modes.
Does the AOK060V65X2 include an integrated body diode, and what are its key recovery characteristics?
Yes, the AOK060V65X2 features a monolithic SiC body diode with measured Qrr = 74.3 nC and trr = 23 ns at IF = 20 A and dI/dt = 1500 A/µs. These values reflect fast, soft recovery behavior essential for reducing switching loss and EMI in hard-commutated topologies such as totem-pole PFC and bidirectional DC/DC converters.
What thermal resistance value should be used for heatsink design with the AOK060V65X2?
For heatsink thermal design, use RθJC = 1.00°C/W (typ) and 1.20°C/W (max) from the Thermal Characteristics table. This junction-to-case value assumes mounting to a large heatsink with proper thermal interface material. RθJA = 4.0°C/W is not applicable for heatsink sizing-it reflects still-air ambient conditions unsuitable for power MOSFET operation.
Is the AOK060V65X2 rated for unclamped inductive switching (UIS), and what is its energy limit?
Yes, the AOK060V65X2 is 100% UIS tested per datasheet Product Summary, with a specified single-pulsed avalanche energy rating of 420 mJ. This rating was verified using L = 5 mH, IAS = 13 A, RG = 10 Ω, and starting TJ = 25°C, confirming ruggedness for inductive load switching without external clamping circuits.
What is the typical gate charge profile of the AOK060V65X2, and how does it impact gate driver selection?
The AOK060V65X2 has Qg = 39.4 nC, Qgs = 13.1 nC, and Qgd = 12.9 nC at VDS = 520 V and ID = 6 A. This distribution indicates strong Miller plateau control, requiring a gate driver capable of ≥2 A peak sink/source current to achieve sub-20 ns rise/fall times. The low 2.2 Ω internal RG further supports fast switching with modest external gate resistance (e.g., 2–5 Ω).
AOK060V65X2 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss):
- 650 V
- Current - Continuous Drain (Id) @ 25°C:
- 29A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 15V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 6A, 15V
- Vgs(th) (Max) @ Id:
- 3.5V @ 6mA
- Gate Charge (Qg) (Max) @ Vgs:
- 39.4 nC @ 15 V
- Vgs (Max):
- +15V, -5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1165 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- 103W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247
AOK060V65X2 FAQ
1.How can I place an order for AOK060V65X2 through Aetrix?
Please submit a Request for Quotation (RFQ) for AOK060V65X2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AOK060V65X2 reliable?
The price and inventory of AOK060V65X2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOK060V65X2 is usually 5 days.
3.What payment methods are accepted for AOK060V65X2?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOK060V65X2 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AOK060V65X2?
AOK060V65X2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AOK060V65X2 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AOK060V65X2?
For technical support, including AOK060V65X2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOK060V65X2 requirements.
6.How does Aetrix verify that AOK060V65X2 is sourced from the original manufacturer or authorized distributors?
All AOK060V65X2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOK060V65X2 meets industry standards.
7.What is the process for return or replacement of AOK060V65X2?
All AOK060V65X2 units undergo pre-shipment inspection (PSI). If there is an issue with AOK060V65X2, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AOK060V65X2 part is unused and in its original packaging.
Return procedure for AOK060V65X2:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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