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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AOK150V120X2

Name: AOK150V120X2
Brand: Alpha & Omega Semiconductor Inc.
SKU: AOK150V120X2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AOK150V120X2

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: AOK150V120X2.pdf

Description:: 1200V SILICON CARBIDE MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AOK150V120X2 from Alpha & Omega Semiconductor is a 1200 V silicon carbide (αSiC) power MOSFET in TO-247-3L package, rated for 40 A pulsed drain current and featuring 150 mΩ typical R_DS(ON) at V_GS = 15 V. It delivers low switching losses (E_on = 88 µJ, E_off = 23 µJ), fast body-diode recovery (Q_rr = 87.5 nC), and is 100% UIS tested - deployed in high-efficiency EV chargers and solar inverters.

For engineers reviewing the AOK150V120X2 datasheet, pinout, applications, or equivalent options, key selection criteria include its 1200 V blocking capability, 1.3 °C/W junction-to-case thermal resistance, gate threshold voltage range (1.8–3.6 V), and compatibility with 15 V gate drive for optimized SiC switching performance.

Technical Context

The AOK150V120X2 employs proprietary αSiC MOSFET technology to achieve high-voltage operation with low conduction and switching losses. Its static parameters include V_DS = 1200 V, R_DS(ON) = 150 mΩ (T_J = 25°C), and V_GS(th) = 1.8–3.6 V, while dynamic characteristics feature C_iss = 664 pF, Q_g = 28.3 nC, and t_r/t_f = 15.4/9.3 ns under standardized test conditions.

Thermal design is supported by R_θJC = 1.3 °C/W and transient thermal impedance validated per Figure 18, enabling robust thermal management in high-power converters. The device operates across T_J = –55 to +175°C and is rated for 100% unclamped inductive switching (UIS) with E_AS = 180 mJ.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS, max	1200 V - supports primary-side switching in 1000 V-class DC-link systems like EV fast chargers and industrial UPS.
R_DS(ON), typ	150 mΩ at V_GS = 15 V, T_J = 25°C - enables low conduction loss in high-current, high-frequency SMPS designs.
Q_rr	87.5 nC - reduces body-diode commutation loss and dV/dt stress in hard-switched totem-pole PFC stages.
E_oss @ 800 V	18 µJ - lowers capacitive turn-on loss and improves efficiency in resonant and soft-switching topologies.
R_θJC	1.3 °C/W - allows direct mounting to heatsinks for high-power density thermal design without thermal interface material degradation concerns.
100% UIS Tested	Validated avalanche energy rating of 180 mJ - ensures ruggedness against inductive load transients in motor drives and industrial inverters.

Pinout & Package

Package: TO-247-3L, through-hole, single-ended heat sink mount with isolated tab. Standardized mechanical footprint per Page 9 of datasheet Rev. 1.0.

Pin/Terminal	Circuit Role	Design Meaning
G (Pin 1)	Gate terminal	Control input requiring ±15 V absolute max; optimized for 15 V turn-on with 2.1 Ω intrinsic gate resistance.
D (Pin 2)	Drain terminal	Main high-voltage power output node; electrically connected to metal tab for thermal conduction and high-current return path.
S (Pin 3)	Source terminal	Power ground reference for gate drive loop; critical for minimizing common-source inductance in high-dI/dt switching.

Key Features

Feature	Design Value
Proprietary αSiC MOSFET technology	Enables 1200 V operation with lower R_DS(ON) × area than comparable Si devices, reducing die size and parasitic capacitance.
Low R_DS(ON) and fast switching	Combines 150 mΩ on-resistance with 28.3 nC total gate charge and 5.2 pF Crss to support >100 kHz hard-switching in high-efficiency converters.
Optimized gate drive voltage	Rated for reliable operation at V_GS = 15 V (recommended), enabling full enhancement while staying within safe V_GS,OP,TRANS = +20 V transient limit.
Low reverse recovery charge (Q_rr)	87.5 nC body diode charge minimizes cross-conduction loss and EMI generation during ZVS/ZCS transitions in bridge-leg configurations.

Applications

EV Fast Charging	Solar Inverters
Use Scenario: Bidirectional AC/DC and DC/DC conversion in 15–350 kW liquid-cooled EV charging stations. IC Role / Device Role / Timing Role: Primary-side high-voltage SiC MOSFET switch in interleaved totem-pole PFC and dual-active-bridge (DAB) isolation stages. Use Value: Enables >98% system efficiency at 100 kHz+ switching with reduced heatsink mass and improved power density over Si IGBTs.	Use Scenario: String-level DC/AC inversion in commercial and utility-scale photovoltaic plants operating at 1000–1500 V DC bus. IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase NPC or T-type multilevel inverter legs. Use Value: Delivers low conduction loss at partial-load conditions and fast turn-off to suppress shoot-through risk in high-voltage grid-tied inverters.
Industrial UPS	High-Power SMPS
Use Scenario: Online double-conversion UPS systems delivering clean 3-phase power for data centers and medical facilities. IC Role / Device Role / Timing Role: Output inverter switch handling continuous 40 A pulsed current and transient overload up to 100 ms. Use Value: 100% UIS-tested ruggedness ensures reliability during mains failure events and motor-start surges without derating.	Use Scenario: Primary-side switching in telecom rectifiers and server PSUs targeting 48 V or 54 V intermediate bus architectures. IC Role / Device Role / Timing Role: High-frequency (150–300 kHz) hard-switched MOSFET in phase-shifted full-bridge or LLC resonant converters. Use Value: Low E_oss (18 µJ) and fast tr/tf reduce dead-time losses and improve light-load efficiency beyond legacy Si superjunction devices.

EV Fast Charging

Solar Inverters

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 15–350 kW liquid-cooled EV charging stations.

IC Role / Device Role / Timing Role: Primary-side high-voltage SiC MOSFET switch in interleaved totem-pole PFC and dual-active-bridge (DAB) isolation stages.

Use Value: Enables >98% system efficiency at 100 kHz+ switching with reduced heatsink mass and improved power density over Si IGBTs.

Use Scenario: String-level DC/AC inversion in commercial and utility-scale photovoltaic plants operating at 1000–1500 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side switching element in three-phase NPC or T-type multilevel inverter legs.

Use Value: Delivers low conduction loss at partial-load conditions and fast turn-off to suppress shoot-through risk in high-voltage grid-tied inverters.

Industrial UPS

High-Power SMPS

Use Scenario: Online double-conversion UPS systems delivering clean 3-phase power for data centers and medical facilities.

IC Role / Device Role / Timing Role: Output inverter switch handling continuous 40 A pulsed current and transient overload up to 100 ms.

Use Value: 100% UIS-tested ruggedness ensures reliability during mains failure events and motor-start surges without derating.

Use Scenario: Primary-side switching in telecom rectifiers and server PSUs targeting 48 V or 54 V intermediate bus architectures.

IC Role / Device Role / Timing Role: High-frequency (150–300 kHz) hard-switched MOSFET in phase-shifted full-bridge or LLC resonant converters.

Use Value: Low E_oss (18 µJ) and fast tr/tf reduce dead-time losses and improve light-load efficiency beyond legacy Si superjunction devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage SiC MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
C3M0150120K	1200 V, 150 mΩ, TO-247-3L; higher Q_g (32 nC) and Q_rr (105 nC); R_θJC = 1.2 °C/W.	Similar topology fit but higher gate drive loss and body-diode loss in PFC; requires larger gate driver peak current.	Select when tighter thermal margin is needed (lower R_θJC), accepting trade-off in switching loss and gate drive complexity.
STW48N120K5	1200 V, 145 mΩ, TO-247-4L; includes Kelvin source; Q_rr = 75 nC; R_θJC = 1.4 °C/W.	Enhanced layout control via 4-pin configuration reduces source inductance; better suited for >200 kHz designs with strict EMI targets.	Prefer for ultra-high-frequency SMPS where source inductance minimization outweighs added PCB routing complexity.

Compared with C3M0150120K and STW48N120K5, the AOK150V120X2 offers balanced trade-offs: lowest Q_rr among the three for reduced PFC loss, moderate Q_g for standard gate drivers, and proven 100% UIS rating - making it optimal for cost-sensitive, high-reliability industrial UPS and solar inverter designs.

Availability

AOK150V120X2 is available at Aetrix Electronics and suitable for EV fast charging, solar inverters, and industrial UPS requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for AOK150V120X2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and SiC devices for power conversion and management.

The AOK150V120X2 belongs to AOS's αSiC family, engineered specifically for high-efficiency, high-reliability 1200 V power conversion in renewable energy and industrial infrastructure applications.

FAQ

What is the maximum recommended gate-source voltage for continuous operation of the AOK150V120X2?

The AOK150V120X2 has a recommended operating gate-source voltage of –5 V to +15 V. While its absolute maximum transient rating extends to +20 V, sustained operation above +15 V risks accelerated gate oxide degradation. The AOK150V120X2 is characterized and optimized for 15 V turn-on, ensuring full enhancement and minimal R_DS(ON) without compromising long-term reliability.

Does the AOK150V120X2 include an integrated body diode, and how is its performance specified?

Yes, the AOK150V120X2 features a monolithic SiC body diode with specified reverse recovery parameters: Q_rr = 87.5 nC, t_rr = 39.5 ns, and I_rm = 4 A at dI/dt = 1000 A/µs. This diode is fully characterized and 100% tested per datasheet Figure 22, enabling reliable synchronous rectification and hard-switched bridge-leg operation without external diode supplementation.

What thermal metrics define the cooling requirements for the AOK150V120X2 in high-power applications?

The AOK150V120X2 specifies R_θJC = 1.3 °C/W (junction-to-case) and R_θJA = 40 °C/W (junction-to-ambient, still air). For forced-air or liquid-cooled systems, thermal design must prioritize low-impedance mounting to heatsinks using the metal tab (drain-connected), as R_θJC dominates total thermal resistance. The AOK150V120X2 transient thermal impedance curve (Figure 18) further enables accurate pulse-power derating.

Is the AOK150V120X2 suitable for use in unclamped inductive switching (UIS) conditions, and what is its rated energy?

Yes, the AOK150V120X2 is 100% UIS tested per datasheet specification, with a rated single-pulsed avalanche energy E_AS of 180 mJ at T_J = 25°C. This rating is verified using standardized test circuit Figure 21 (L = 5 mH, I_AS = 8.5 A, R_G = 25 Ω), confirming robustness against inductive load transients encountered in motor drives and UPS hold-up circuits.

How does the AOK150V120X2's R_DS(ON) vary with temperature, and what is its impact on thermal design?

The AOK150V120X2 exhibits positive temperature coefficient behavior: R_DS(ON) increases from 150 mΩ at T_J = 25°C to 210 mΩ at T_J = 150°C. This inherent current-sharing stability supports paralleling and simplifies thermal runaway mitigation. Designers must account for this rise when calculating worst-case conduction loss at maximum junction temperature, as specified in Figure 3 and Figure 4 of the AOK150V120X2 datasheet.

AOK150V120X2 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 20A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 15V

Rds On (Max) @ Id, Vgs:: 195mOhm @ 3.9A, 15V

Vgs(th) (Max) @ Id:: 3.6V @ 3.9mA

Gate Charge (Qg) (Max) @ Vgs:: 28.3 nC @ 15 V

Vgs (Max):: +15V, -5V

Input Capacitance (Ciss) (Max) @ Vds:: 664 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 115W (Tj)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247

AOK150V120X2 FAQ

1.How can I place an order for AOK150V120X2 through Aetrix?

Please submit a Request for Quotation (RFQ) for AOK150V120X2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AOK150V120X2 reliable?

The price and inventory of AOK150V120X2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AOK150V120X2 is usually 5 days.

3.What payment methods are accepted for AOK150V120X2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AOK150V120X2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AOK150V120X2?

AOK150V120X2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AOK150V120X2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AOK150V120X2?

For technical support, including AOK150V120X2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AOK150V120X2 requirements.

6.How does Aetrix verify that AOK150V120X2 is sourced from the original manufacturer or authorized distributors?

All AOK150V120X2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AOK150V120X2 meets industry standards.

7.What is the process for return or replacement of AOK150V120X2?

All AOK150V120X2 units undergo pre-shipment inspection (PSI). If there is an issue with AOK150V120X2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AOK150V120X2 part is unused and in its original packaging.

Return procedure for AOK150V120X2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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