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Alpha & Omega Semiconductor Inc. AON1605

Part No.:
AON1605
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
3-UFDFN
Datasheet:
AetrixAON1605.pdf
Description:
MOSFET P-CH 20V 700MA 3DFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,090

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Product details

Overview

AON1605 from Alpha & Omega Semiconductor is a 20V P-channel enhancement-mode trench MOSFET in a DFN 1.0×0.6 mm package, rated for −0.7A continuous drain current at VGS = −4.5V, with RDS(ON) < 710 mΩ at that bias, and optimized for low-voltage load switching in space-constrained portable electronics.

For engineers reviewing the AON1605 datasheet, pinout, applications, or equivalent options, key selection criteria include its ultra-compact DFN footprint, guaranteed HBM Class 1C ESD protection, body-diode forward voltage of −0.85 V (typ), and thermal resistance RθJA as low as 80 °C/W on 2 oz copper FR-4 - critical for thermally demanding battery-powered systems.

Technical Context

The AON1605 employs advanced trench-gate process technology to achieve low RDS(ON) and fast switching performance in a 3-terminal surface-mount package. Its gate threshold voltage range of −0.4 V to −1.1 V enables reliable turn-on with low-voltage logic-level drive (e.g., 1.8 V or 2.5 V GPIO), while its −2 A pulsed drain rating supports short-duration surge loads.

Thermal design is enabled by two validated RθJA values: 80 °C/W (1 in² 2 oz Cu) and 140 °C/W (minimum-pad board), allowing accurate junction temperature estimation across PCB layouts. The device's body diode exhibits VSD = −0.85 V (typ) at −0.4 A, supporting bidirectional current handling in reverse-polarity protection circuits.

Key Specifications

ParameterValue and Actual Design Meaning
VDS−20 V maximum - supports input rails up to 20 V with margin for transients in USB, power bank, and PMIC output stages.
ID (VGS = −4.5 V)−0.7 A continuous - sufficient for powering peripherals like sensors, LEDs, or small displays in handheld devices.
RDS(ON) (VGS = −4.5 V)< 710 mΩ - limits conduction loss to < 0.35 W at 0.7 A, enabling efficient operation without heatsinking.
Qg0.75 nC - enables fast switching with low gate-drive energy, reducing dynamic losses in PWM-controlled loads.
VGS(th)−0.4 to −1.1 V - ensures full enhancement with standard 1.8 V or 2.5 V I/O, eliminating need for level-shifting circuitry.
RθJA (2 oz Cu)80 °C/W - allows ~1.1 W power dissipation before reaching 150 °C junction limit on typical reference board.
HBM ESD RatingClass 1C (≥1 kV) - provides baseline robustness against handling-induced discharge in assembly environments.

Pinout & Package

Package: DFN 1.0 × 0.6 mm, 3-pin, bottom-exposed thermal pad (no internal thermal via required). Pin 1 = Source, Pin 2 = Gate, Pin 3 = Drain - verified per AOS Rev. 2.1 datasheet top/bottom view diagrams.

Pin/TerminalCircuit RoleDesign Meaning
Source (S)Reference node for gate control and current return pathConnected to system ground or higher-potential rail depending on high-side vs. low-side switch topology.
Gate (G)Control electrode for channel formationDriven by logic-level signal; requires no external pull-down if driven actively, but benefits from 100 kΩ pull-down for default-OFF safety.
Drain (D)Current output terminalConnected to load; exposed pad enhances thermal transfer to PCB - solder mask opening recommended under pad.

Key Features

FeatureDesign Value
Ultra-small DFN 1.0×0.6 mm footprintReduces board area by >50% vs. SOT-23, enabling dense integration in wearables and hearing aids.
Low RDS(ON) at 1.8 V logic driveGuaranteed turn-on with 1.8 V microcontroller I/O, eliminating level shifters in battery management subsystems.
Fast switching (tf = 8 ns)Minimizes transition losses in high-frequency load switching (e.g., LED dimming at >10 kHz).
Integrated body diode with VSD = −0.85 V (typ)Enables reverse-current blocking and freewheeling in buck regulators or polarity-reversal protection without external diode.
−55°C to +150°C operating rangeSupports deployment in automotive cabin modules, industrial sensors, and outdoor IoT nodes with wide ambient swings.

Applications

Battery-Powered Load SwitchUSB Port Power Control

Use Scenario: Enabling/disabling power to Bluetooth LE modules or environmental sensors in smart tags during sleep/wake cycles.

IC Role / Device Role / Timing Role: Low-side load switch controlling VDD rail to peripheral ICs; operates in static ON/OFF states with infrequent transitions.

Use Value: Contributes <0.1 µA off-state leakage, preserving multi-year battery life; RDS(ON) < 710 mΩ ensures <50 mV drop at 70 mA load current.

Use Scenario: Isolating downstream USB data/power lines during hot-plug detection or fault conditions in portable hubs.

IC Role / Device Role / Timing Role: High-side switch placed between USB VBUS and connector, controlled by USB controller GPIO.

Use Value: With VGS(th) down to −0.4 V, it turns fully ON using 3.3 V logic; fast toff = 22 ns prevents bus glitches during disconnect events.

Reverse-Polarity ProtectionPMIC Output Stage Switch

Use Scenario: Preventing damage when Li-ion battery packs are inserted backward into charging cradles or medical devices.

IC Role / Device Role / Timing Role: P-channel MOSFET configured in series with positive supply rail; body diode blocks reverse current flow.

Use Value: VSD = −0.85 V (typ) minimizes forward drop in protection path; no external diode needed, saving BOM cost and footprint.

Use Scenario: Final-stage power gating for configurable LDO outputs in multi-rail PMICs used in camera modules or edge AI accelerators.

IC Role / Device Role / Timing Role: Post-regulator switch delivering clean, sequenced power to SoC subsystems (e.g., ISP, NPU).

Use Value: Low Qg (0.75 nC) allows precise timing control via PMIC's integrated gate driver; DFN thermal pad sustains 0.5 W dissipation during burst-mode operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET load switch applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN10H400LRDS(ON) = 400 mΩ @ VGS = −4.5 V; larger SOT-723 package (1.7×1.3 mm)Higher current capability (−1.0 A), but 2.8× larger footprint and 2.5× higher RθJASelect when >0.7 A continuous load or lower on-resistance is required, and board area permits larger package.
AO3401RDS(ON) = 55 mΩ @ VGS = −4.5 V; SO-23 package (3.0×1.4 mm); higher Qg = 2.5 nCHigher power handling (−4.2 A), but 5× larger footprint and slower switchingChoose for higher-current DC/DC post-regulation where thermal mass and layout space allow SO-23 mounting.

Compared with DMN10H400L and AO3401, the AON1605 delivers optimal balance of ultra-compact size, logic-level compatibility, and thermal efficiency for sub-1A portable applications - making it preferred where PCB real estate and battery runtime are primary constraints.

Availability

AON1605 is available at Aetrix Electronics and suitable for battery management systems, USB-C power delivery accessories, and wearable sensor nodes requiring stable component supply and long-term manufacturability.

Supply support for AON1605 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON1605 belongs to AOS's low-voltage logic-level P-channel MOSFET product line, engineered specifically for space- and power-constrained load switching in portable and battery-operated electronics.

FAQ

What is the maximum continuous drain current rating for the AON1605 at 70°C ambient?

The AON1605 has a continuous drain current rating of −0.55 A at TA = 70°C, derated from −0.7 A at 25°C per its absolute maximum ratings table. This reflects thermal limitations of the DFN 1.0×0.6 mm package under natural convection; actual usable current depends on PCB copper area and airflow. The AON1605 datasheet specifies this value explicitly in the "Continuous Drain Current" row under "TA = 70°C" condition.

Does the AON1605 require a gate resistor for safe operation?

The AON1605 does not require a series gate resistor for basic ON/OFF switching, as its gate charge (Qg = 0.75 nC) is low and compatible with direct GPIO drive. However, a 10–100 Ω resistor is recommended to dampen ringing during fast edges and reduce EMI in noise-sensitive applications. The AON1605 gate-source capacitance (Ciss = 50 pF) and gate resistance (Rg = 45 Ω) make it responsive to standard digital drivers without risk of oscillation.

Can the AON1605 be used in high-side switch configurations?

Yes, the AON1605 is commonly deployed as a high-side switch due to its P-channel architecture - source tied to input rail, drain to load, and gate driven below source potential. Its VGS(th) range (−0.4 V to −1.1 V) ensures reliable turn-on with 3.3 V or 5 V logic referenced to system ground. The AON1605 body diode orientation supports reverse-current blocking in this configuration, making it suitable for USB VBUS control and reverse-polarity protection circuits.

What is the thermal resistance from junction to ambient (RθJA) for the AON1605 on a minimal-pad PCB?

The AON1605 has an RθJA of 140 °C/W when mounted on a minimum-pad FR-4 board per AOS datasheet Note B. This value assumes no additional copper pour and represents worst-case thermal performance for compact layouts. For designs with 1 in² of 2 oz copper, RθJA improves to 80 °C/W. Both values are measured at TA = 25°C and used to calculate junction temperature rise: TJ = TA + PD × RθJA. The AON1605 maximum TJ is 150°C.

Is the AON1605 RoHS-compliant and halogen-free?

Yes, the AON1605 is RoHS-compliant and halogen-free per AOS's official product compliance documentation and packaging markings. It meets JEDEC J-STD-609 Category 1 for bromine/chlorine content (<900 ppm) and satisfies EU RoHS Directive 2011/65/EU requirements. Lead-free reflow profiles follow IPC/JEDEC J-STD-020, with peak temperature up to 260°C. Full compliance reports are available through AOS's website and authorized distributors for the AON1605.

AON1605 Specifications

Product attributes
Attribute value
Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
3-UFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Rds On (Max) @ Id, Vgs:
710mOhm @ 400mA, 4.5V
Vgs(th) (Max) @ Id:
1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.75 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
50 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
900mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
3-DFN (1.0 x 0.60)

AON1605 FAQ

1.How can I place an order for AON1605 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON1605 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON1605 reliable?

The price and inventory of AON1605 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON1605 is usually 5 days.

3.What payment methods are accepted for AON1605?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON1605 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON1605?

AON1605 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON1605 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON1605?

For technical support, including AON1605 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON1605 requirements.

6.How does Aetrix verify that AON1605 is sourced from the original manufacturer or authorized distributors?

All AON1605 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON1605 meets industry standards.

7.What is the process for return or replacement of AON1605?

All AON1605 units undergo pre-shipment inspection (PSI). If there is an issue with AON1605, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON1605 part is unused and in its original packaging.

Return procedure for AON1605:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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