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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON1634

Name: AON1634
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON1634
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON1634

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 6-PowerUFDFN

Datasheet:: AON1634.pdf

Description:: MOSFET N-CH 30V 4A 6DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON1634 from Alpha & Omega Semiconductor is a 30V N-channel enhancement-mode trench MOSFET in a DFN1.6x1.6A package, featuring R_DS(ON) < 54 mΩ at V_GS = 10 V, 4 A continuous drain current, and HBM ESD rating Class 3A (±8 kV). It serves as a low-loss load switch or battery protection FET in portable power management circuits.

For engineers reviewing the AON1634 datasheet, pinout, applications, or equivalent options, key selection criteria include its 1.6×1.6 mm DFN thermal performance (R_θJA = 110°C/W), gate threshold voltage range (0.7–1.5 V), body diode forward voltage (0.75–1.0 V), and pulsed drain current capability (16 A).

Technical Context

The AON1634 employs advanced trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: t_D(on) = 2 ns, t_r = 3.5 ns, t_D(off) = 22 ns, and t_f = 3.5 ns. Its gate charge profile shows Q_g(10V) = 5.7–10 nC and Q_g(4.5V) = 2.6–5 nC, enabling efficient drive from low-voltage logic.

Thermally, it is characterized for operation from –55°C to +150°C junction temperature, with R_θJA = 110°C/W (t ≤ 10 s) and R_θJA = 56°C/W (steady-state on 1 in² 2 oz Cu FR-4), and supports repetitive pulsed operation up to 16 A under SOA-limited conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; suitable for 12–24 V system rails and USB PD input stages.
I_D (continuous)	4 A @ T_A = 25°C - Sustained load-switch current without heatsink on standard PCB layout.
R_DS(ON) @ V_GS=10 V	< 54 mΩ - Enables <170 mW conduction loss at 4 A, critical for thermally constrained battery packs.
R_DS(ON) @ V_GS=4.5 V	< 62 mΩ - Ensures reliable turn-on with 3.3 V or 4.2 V logic-level gate drive in Li-ion protection ICs.
Q_g(4.5V)	2.6–5 nC - Low gate charge reduces driver power and enables high-frequency PWM control up to ~1 MHz.
HBM ESD Rating	Class 3A (±8 kV) - Robust handling during board assembly and end-user interface exposure.
T_J Range	–55°C to +150°C - Validated for automotive cabin and industrial ambient environments.

Pinout & Package

Package: DFN 1.6×1.6 mm, 3-pin, bottom-exposed thermal pad (pin 1 = Gate, pin 2 = Drain, pin 3 = Source). No leadframe; solderable thermal pad improves heat transfer to PCB ground plane.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate terminal	Control input; requires no external pull-down for default-off behavior due to V_GS(th) min = 0.7 V.
Pin 2 (D)	Drain terminal	Main current path input; connected to higher-potential rail (e.g., battery anode or DC input).
Pin 3 (S)	Source terminal	Current return path and reference node; tied to system ground or battery cathode in high-side switch configurations.

Key Features

Feature	Design Value
Ultra-low R_DS(ON) at 4.5 V	Enables full enhancement with single-cell Li-ion (3.0–4.2 V) or 3.3 V microcontroller GPIO without level-shifting.
Low gate charge (Q_g(4.5V))	Reduces switching losses and driver IC loading-critical for compact, high-efficiency power sequencers.
Integrated body diode	Supports reverse-current protection and freewheeling in buck converters or OR-ing circuits without external diode.
DFN thermal pad	Provides direct thermal path to PCB copper; achieves 56°C/W steady-state R_θJA with minimal layout area.
ESD-hardened gate oxide	Withstands ±8 kV HBM without degradation-reduces field failure risk in handheld and wearable assemblies.

Applications

Battery Protection Circuit	USB-C Power Delivery Input Switch
Use Scenario: Prevents overcharge, over-discharge, and short-circuit damage in 1–2 cell Li-ion packs using protection ICs like S-8261. IC Role / Device Role: Primary N-channel back-to-back switch controlling charge/discharge paths between cells and system load. Use Value: R_DS(ON) < 62 mΩ at 4.5 V ensures <1 mV detection offset error across sense resistors, preserving protection accuracy.	Use Scenario: Isolates upstream USB-C source from downstream device during hot-plug or fault events per USB PD 3.1 spec. IC Role / Device Role: High-side load switch placed between VBUS and system PMIC input. Use Value: Fast 22 ns t_D(off) and low Q_g enable sub-100 µs fault response time, meeting USB PD fast role swap timing.
Power Bank Load Switch	Smartphone Front-End Protection
Use Scenario: Controls power delivery from internal battery to USB-A/USB-C output ports in portable chargers. IC Role / Device Role: Low-R_DS(ON) main switch enabling >95% efficiency at 3 A output with minimal thermal rise. Use Value: 1.6×1.6 mm footprint saves >40% board area vs. SO-8 equivalents while maintaining 4 A rating.	Use Scenario: Protects baseband processor and RF transceivers from VBUS surge and reverse-current injection during charging. IC Role / Device Role: Reverse-blocking switch in charger front-end, placed between USB port and PMIC. Use Value: Body diode V_SD = 0.75–1.0 V limits reverse leakage to <2.5 A, preventing latch-up in sensitive analog blocks.

Battery Protection Circuit

USB-C Power Delivery Input Switch

Use Scenario: Prevents overcharge, over-discharge, and short-circuit damage in 1–2 cell Li-ion packs using protection ICs like S-8261.

IC Role / Device Role: Primary N-channel back-to-back switch controlling charge/discharge paths between cells and system load.

Use Value: R_DS(ON) < 62 mΩ at 4.5 V ensures <1 mV detection offset error across sense resistors, preserving protection accuracy.

Use Scenario: Isolates upstream USB-C source from downstream device during hot-plug or fault events per USB PD 3.1 spec.

IC Role / Device Role: High-side load switch placed between VBUS and system PMIC input.

Use Value: Fast 22 ns t_D(off) and low Q_g enable sub-100 µs fault response time, meeting USB PD fast role swap timing.

Power Bank Load Switch

Smartphone Front-End Protection

Use Scenario: Controls power delivery from internal battery to USB-A/USB-C output ports in portable chargers.

IC Role / Device Role: Low-R_DS(ON) main switch enabling >95% efficiency at 3 A output with minimal thermal rise.

Use Value: 1.6×1.6 mm footprint saves >40% board area vs. SO-8 equivalents while maintaining 4 A rating.

Use Scenario: Protects baseband processor and RF transceivers from VBUS surge and reverse-current injection during charging.

IC Role / Device Role: Reverse-blocking switch in charger front-end, placed between USB port and PMIC.

Use Value: Body diode V_SD = 0.75–1.0 V limits reverse leakage to <2.5 A, preventing latch-up in sensitive analog blocks.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel load switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H450LPS-13	R_DS(ON) = 45 mΩ @ 4.5 V; larger 2×2 mm DFN; Q_g = 6.5 nC @ 4.5 V	Slightly lower conduction loss but higher gate drive demand; less space-constrained layouts	Prefer when board area allows and lower R_DS(ON) outweighs gate charge penalty.
SI2302DS-T1-GE3	R_DS(ON) = 75 mΩ @ 4.5 V; SOT-23 package; R_θJA = 200°C/W; no thermal pad	Higher thermal resistance limits continuous current to ~1.5 A; unsuitable for >2 A sustained loads	Select only for cost-sensitive, low-power (<1 W) applications where size is secondary to BOM cost.

Compared with DMN10H450LPS-13 and SI2302DS-T1-GE3, the AON1634 delivers optimal balance of low R_DS(ON), compact 1.6×1.6 mm footprint, and robust thermal performance-making it preferred for space- and efficiency-critical battery-powered systems.

Availability

AON1634 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery input switches, and power bank load switching requiring stable component supply and consistent parametric performance across production lots.

Supply support for AON1634 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and automotive markets.

The AON1634 belongs to AOS's low-voltage trench MOSFET product line, engineered specifically for high-density, high-efficiency power management in portable and USB-powered devices.

FAQ

What is the maximum continuous drain current rating for the AON1634 at 70°C ambient temperature?

The AON1634 supports 1.15 A continuous drain current at T_A = 70°C with no heatsink on standard FR-4 PCB, per its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by R_θJA = 110°C/W (t ≤ 10 s) and T_J(MAX) = 150°C. At 25°C ambient, the rating increases to 4 A.

Does the AON1634 require a gate resistor for typical 3.3 V MCU drive?

No external gate resistor is required for basic on/off control with a 3.3 V microcontroller GPIO driving the AON1634, as its V_GS(th) min is 0.7 V and Q_g(4.5V) is only 2.6–5 nC. However, a 10–47 Ω series resistor is recommended to dampen ringing during high-speed PWM switching above 500 kHz.

Can the AON1634 be used in a high-side switch configuration?

Yes, the AON1634 can operate as a high-side switch when driven by a gate voltage exceeding the source potential by ≥4.5 V. Its 30 V V_DS rating and low R_DS(ON) make it viable for 12–24 V rail isolation, though a dedicated high-side driver IC is needed to generate the boosted gate voltage relative to the switched rail.

What is the body diode forward voltage specification for the AON1634?

The AON1634 body diode forward voltage is specified as V_SD = 0.75–1.0 V at I_S = 1 A and T_J = 25°C. This low V_F supports efficient freewheeling in synchronous rectifier and OR-ing applications, minimizing conduction loss compared to discrete Schottky solutions.

Is the AON1634 RoHS-compliant and halogen-free?

Yes, the AON1634 is RoHS-compliant and halogen-free per AOS' standard product specifications and material declarations. Full compliance documentation-including IPC-1752A data and REACH SVHC status-is available through AOS' official product page and Aetrix Electronics' material certification portal.

AON1634 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 6-PowerUFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 54mOhm @ 4A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 10 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 245 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 1.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-DFN (1.6x1.6)

AON1634 FAQ

1.How can I place an order for AON1634 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON1634 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON1634 reliable?

The price and inventory of AON1634 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON1634 is usually 5 days.

3.What payment methods are accepted for AON1634?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON1634 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON1634?

AON1634 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON1634 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON1634?

For technical support, including AON1634 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON1634 requirements.

6.How does Aetrix verify that AON1634 is sourced from the original manufacturer or authorized distributors?

All AON1634 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON1634 meets industry standards.

7.What is the process for return or replacement of AON1634?

All AON1634 units undergo pre-shipment inspection (PSI). If there is an issue with AON1634, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON1634 part is unused and in its original packaging.

Return procedure for AON1634:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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