Alpha & Omega Semiconductor Inc. AON2392

Overview

AON2392 from Alpha & Omega Semiconductor is a 100V N-Channel enhancement-mode MOSFET using AlphaSGT™ trench power technology, rated for 8A continuous drain current at V_GS=10V, with R_DS(ON) < 32mΩ at 10V and < 39mΩ at 4.5V, designed for logic-level gate drive in compact DC-DC converters and load switches.

For engineers reviewing the AON2392 datasheet, pinout, applications, or equivalent options, key selection considerations include its DFN2x2C package thermal performance (R_θJA = 55°C/W), low gate charge (Q_g(10V) = 12.8nC), body-diode reverse recovery characteristics (t_rr = 20ns, Q_rr = 70nC), and logic-compatible V_GS(th) range (1.4–2.4V).

Technical Context

The AON2392 employs AlphaSGT™ trench-gate silicon technology to achieve high cell density and low specific on-resistance in a thermally efficient DFN2x2C package. Its gate threshold voltage (1.4–2.4V) ensures reliable turn-on with standard 3.3V/5V logic drivers, while its low Q_g and fast switching parameters (t_D(on) = 7ns, t_f = 3ns) support high-frequency operation up to several hundred kHz.

Thermal design is enabled by a junction-to-ambient resistance of 55°C/W on a 1in² 2oz FR-4 board, and safe operating area (SOA) curves confirm single-pulse capability up to 10W for 10ms pulses. The integrated body diode exhibits controlled reverse recovery (Q_rr = 70nC, t_rr = 20ns) suitable for synchronous rectification and inductive load switching.

Key Specifications

Pinout & Package

Package: DFN2x2C (2.0mm × 2.0mm, 0.75mm height, exposed thermal pad). Pin 1 = Gate (G), Pin 2 = Drain (D), Pin 3 = Source (S); top view shows G-D-S left-to-right; bottom view confirms exposed drain pad for thermal conduction.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Compared with DMN2020LH-7 and Si2302DS-T1-GE3, the AON2392 uniquely balances 100V rating, 8A current capability, and logic-level drive in a 2×2mm DFN, making it irreplaceable in 24–48V industrial and IoT power switching where both voltage margin and thermal density matter.

Availability

AON2392 is available at Aetrix Electronics and suitable for smart home load switching, IoT sensor power management, and VOIP power supply applications requiring stable component supply and consistent parametric performance across production lots.

Supply support for AON2392 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON2392 belongs to AOS's AlphaSGT™ trench MOSFET product line, engineered specifically for high-efficiency, high-density DC-DC conversion and load switching in space-constrained, thermally demanding applications.

FAQ

What is the maximum continuous drain current rating for the AON2392 under typical operating conditions?

The AON2392 is rated for 8A continuous drain current at V_GS = 10V and T_A = 25°C. At elevated ambient temperatures (e.g., 70°C), derating applies: its power dissipation limit drops to 2.6W, supporting ~6.4A with R_DS(ON) ≈ 32mΩ. Actual current must be validated against PCB layout, copper area, and airflow per the 55°C/W R_θJA specification in the AON2392 datasheet.

Can the AON2392 be driven directly by a 3.3V microcontroller GPIO without a gate driver?

Yes-the AON2392 features a logic-level gate threshold (V_GS(th) = 1.4–2.4V) and achieves R_DS(ON) < 39mΩ at V_GS = 4.5V, making it fully compatible with 3.3V GPIO. However, for switching speeds above 100kHz or loads >3A, a dedicated gate driver is recommended to manage Q_g = 12.8nC efficiently and minimize Miller-induced shoot-through risk in half-bridge configurations.

What is the thermal resistance (R_θJA) of the AON2392, and how does it affect PCB layout?

The AON2392 has R_θJA = 55°C/W when mounted on a 1in² FR-4 board with 2oz copper. This value assumes direct thermal connection of the exposed drain pad to internal/external copper planes. To achieve this performance, designers must implement ≥4 thermal vias under the pad, connect to ≥1cm² of inner-layer copper, and avoid solder mask over thermal pads-failure to do so may raise R_θJA by 20–40%.

Does the AON2392 include an integrated body diode, and what are its key recovery characteristics?

Yes-the AON2392 integrates a parasitic body diode with V_SD = 0.74–1.0V and reverse recovery time t_rr = 20ns at I_F = 8A, di/dt = 500A/µs. Its Q_rr = 70nC enables predictable snubberless operation in synchronous rectifier and freewheeling applications, though designers should verify voltage overshoot in unclamped inductive switching per the AON2392 SOA curve.

Is the AON2392 RoHS and halogen-free compliant, and what is its moisture sensitivity level (MSL)?

Yes-the AON2392 is RoHS-compliant and halogen-free per AOS documentation. It carries MSL-1 rating (unlimited floor life at ≤30°C/85% RH), meaning it can be stored and assembled without dry-pack or baking requirements, simplifying manufacturing logistics for high-volume IoT and industrial production.