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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON2407

Name: AON2407
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON2407
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: AON2407

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: AON2407.pdf

Description:: MOSFET P-CH 30V 6.3A 6DFN

Quantity:: RFQ Add To RFQ list

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Product details

Overview

AON2407 from Alpha & Omega Semiconductor is a 30V P-channel enhancement-mode trench MOSFET in DFN 2×2B package, with R_DS(ON) < 37.5 mΩ at V_GS = −10 V, −6.3 A continuous drain current, and optimized for low-voltage load switching in portable battery-powered systems.

For engineers reviewing the AON2407 datasheet, pinout, applications, or equivalent options, key selection criteria include gate threshold voltage (−0.93 V typ), body-diode forward voltage (−0.7 V typ), thermal resistance R_θJA = 80 °C/W, and unclamped inductive switching capability.

Technical Context

The AON2407 uses advanced trench-gate process technology to achieve low on-resistance while maintaining fast switching performance: t_D(on) = 5.8 ns, t_r = 7.0 ns, Q_g(10V) = 17.2 nC, and C_iss = 746 pF at V_DS = −15 V. Its negative gate threshold (−0.93 V typ) enables direct logic-level drive from 3.3 V microcontrollers.

Thermally, it features a DFN 2×2B package with exposed drain pad for enhanced heat dissipation, supporting 1.8 W steady-state power dissipation at T_A = 70 °C and junction temperature up to 150 °C. The body diode exhibits t_rr = 19 ns and Q_rr = 46 nC under IF = −6.3 A, dI/dt = 500 A/µs conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V maximum drain-source voltage - supports 24 V rail and battery backup systems with margin.
I_D (continuous)	−6.3 A at T_A = 25 °C - sufficient for USB-C PD load switches and smart battery protection FETs.
R_DS(ON) (V_GS = −10 V)	< 37.5 mΩ - minimizes conduction loss in high-current path applications like power banks.
V_GS(th)	−0.93 V typical - enables reliable turn-on with 3.3 V GPIO without level-shifting circuitry.
Q_g(10V)	17.2 nC typical - balances switching speed and gate drive power in 1–2 MHz DC-DC controllers.
R_θJA	80 °C/W - defines thermal derating on standard 1 in² FR-4 PCB with 2 oz copper, critical for compact layout.
t_r/t_f	7.0 ns / 23.2 ns - supports fast PWM dimming and synchronous rectification in buck converters.

Pinout & Package

Package: DFN 2×2B (2.0 mm × 2.0 mm × 0.65 mm), thermally enhanced with exposed drain pad on bottom side.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts −12 V max gate-source voltage; requires no external pull-up for high-side switch configuration.
Drain (D)	Drain	Connected to exposed copper pad on package underside; primary current path and thermal conduction path to PCB.
Source (S)	Source	Common reference node for gate drive; tied to system ground or battery negative in load-switch topology.

Key Features

Feature	Design Value
Low R_DS(ON) at logic-level V_GS	R_DS(ON) < 46 mΩ at V_GS = −4.5 V - enables efficient operation directly from 5 V or 3.3 V supply rails.
Trench MOSFET architecture	Optimized cell pitch and gate oxide thickness - delivers 24 S transconductance and stable threshold across temperature.
Fast body diode recovery	t_rr = 19 ns, Q_rr = 46 nC - reduces switching loss and EMI in bidirectional power paths and reverse-polarity protection.
DFN 2×2B thermal design	R_θJC ≈ 37 °C/W (calculated from R_θJA and board data) - allows >1.5× higher power density than SO-8 equivalents in space-constrained designs.

Applications

Battery Protection Circuit	USB-C Power Delivery Switch
Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs. IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated by protection IC's GATE signal. Use Value: R_DS(ON) < 37.5 mΩ limits voltage drop to < 240 mV at 6.3 A, preserving battery runtime and thermal headroom.	Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/20 V PD profiles. IC Role / Device Role / Timing Role: Bidirectional power switch enabling source/sink role negotiation; body diode handles reverse conduction during CC logic transitions. Use Value: Fast t_r/t_f and low Q_g support clean 100 kHz–1 MHz switching during port role swaps without excessive gate drive loss.
Power Bank Load Switch	Industrial Sensor Node Power Gate
Use Scenario: On/off control of output ports in multi-port portable chargers with dynamic load sharing. IC Role / Device Role / Timing Role: Low-side or high-side switch isolating downstream 5 V/9 V/12 V outputs based on MCU command. Use Value: V_GS(th) = −0.93 V ensures full enhancement with 3.3 V I/O, eliminating need for discrete level shifters or charge pumps.	Use Scenario: Power gating of RF transceivers and analog front-ends in battery-operated wireless sensors. IC Role / Device Role / Timing Role: Always-on enable switch responding to wake-up interrupt; must survive 150 °C junction temperature in sealed enclosures. Use Value: 150 °C max T_J rating and R_θJA = 80 °C/W allow sustained 500 mA loads in 70 °C ambient without heatsinking.

Battery Protection Circuit

USB-C Power Delivery Switch

Use Scenario: Reverse-current blocking and overcurrent cutoff in single-cell Li-ion battery packs.

IC Role / Device Role / Timing Role: High-side load switch controlling battery discharge path; activated by protection IC's GATE signal.

Use Value: R_DS(ON) < 37.5 mΩ limits voltage drop to < 240 mV at 6.3 A, preserving battery runtime and thermal headroom.

Use Scenario: VBUS path control in USB-C receptacles supporting 3 A/20 V PD profiles.

IC Role / Device Role / Timing Role: Bidirectional power switch enabling source/sink role negotiation; body diode handles reverse conduction during CC logic transitions.

Use Value: Fast t_r/t_f and low Q_g support clean 100 kHz–1 MHz switching during port role swaps without excessive gate drive loss.

Power Bank Load Switch

Industrial Sensor Node Power Gate

Use Scenario: On/off control of output ports in multi-port portable chargers with dynamic load sharing.

IC Role / Device Role / Timing Role: Low-side or high-side switch isolating downstream 5 V/9 V/12 V outputs based on MCU command.

Use Value: V_GS(th) = −0.93 V ensures full enhancement with 3.3 V I/O, eliminating need for discrete level shifters or charge pumps.

Use Scenario: Power gating of RF transceivers and analog front-ends in battery-operated wireless sensors.

IC Role / Device Role / Timing Role: Always-on enable switch responding to wake-up interrupt; must survive 150 °C junction temperature in sealed enclosures.

Use Value: 150 °C max T_J rating and R_θJA = 80 °C/W allow sustained 500 mA loads in 70 °C ambient without heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2301DDS	R_DS(ON) = 55 mΩ @ V_GS = −4.5 V; smaller 1.6×1.6 mm package; lower I_D = −2.7 A.	Suitable only for sub-2 A loads; less thermal margin in continuous operation.	Prefer when board area is constrained and current demand is ≤2 A.
DMG1012T	R_DS(ON) = 42 mΩ @ V_GS = −4.5 V; same DFN 2×2 but different pinout (G-S-D vs G-D-S); higher Q_g = 24 nC.	Requires PCB layout revision due to non-identical pin mapping; slower switching increases driver loss.	Select only if existing layout accommodates alternate pinout and gate drive can handle higher Q_g.

Compared with Si2301DDS and DMG1012T, the AON2407 delivers superior conduction efficiency at 6.3 A loads, maintains compatibility with standard DFN 2×2B footprint and pinout, and provides the lowest combined R_DS(ON)/Q_g figure-of-merit for high-duty-cycle battery-switching applications.

Availability

AON2407 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial sensor node power gating requiring stable component supply and long-term manufacturability.

Supply support for AON2407 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power modules for computing, consumer, and industrial markets.

The AON2407 belongs to AOS's DFN-packaged logic-level P-channel MOSFET product line, engineered specifically for compact, high-current load switching in battery-powered and USB-C infrastructure applications.

FAQ

What is the maximum continuous drain current rating for the AON2407?

The AON2407 has a maximum continuous drain current I_D of −6.3 A at T_A = 25 °C. At elevated ambient temperatures (e.g., T_A = 70 °C), the rating drops to −5 A due to thermal derating. This value is package-limited and assumes proper PCB copper area for heat dissipation, as specified in the datasheet's thermal characterization section.

Does the AON2407 support 3.3 V logic-level gate drive?

Yes, the AON2407 supports 3.3 V logic-level gate drive. Its typical gate threshold voltage V_GS(th) is −0.93 V, and R_DS(ON) remains < 46 mΩ at V_GS = −4.5 V and < 70 mΩ at V_GS = −2.5 V. This ensures full enhancement and low conduction loss when driven directly from standard 3.3 V microcontroller GPIOs without external level shifting.

What is the thermal resistance R_θJA of the AON2407, and how is it measured?

The AON2407 has a maximum R_θJA of 80 °C/W, measured per JEDEC JESD51-2 with the device mounted on a 1 in² FR-4 board with 2 oz copper in still air at T_A = 25 °C. This value reflects real-world thermal performance on standard PCBs and is used to calculate junction temperature rise under load: T_J = T_A + P_D × R_θJA.

Can the AON2407 be used in bidirectional current applications?

Yes, the AON2407 supports bidirectional current flow via its integrated body diode, which has a typical forward voltage V_SD of −0.7 V at I_S = −1 A and reverse recovery time t_rr of 19 ns. This makes the AON2407 suitable for USB-C power path management where current direction changes during role swaps, provided external circuitry manages gate bias accordingly.

Is the AON2407 qualified for automotive applications?

No, the AON2407 is explicitly designed and qualified for the consumer market only. Per the datasheet, "applications or uses as critical components in life support devices or systems are not authorized." It does not meet AEC-Q101 stress testing requirements and lacks automotive-grade qualification documentation, making it unsuitable for automotive or medical safety-critical systems.

AON2407 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 6.3A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 10V

Rds On (Max) @ Id, Vgs:: 37.5mOhm @ 6.3A, 10V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 21 nC @ 10 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 746 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-DFN (2x2)

AON2407 FAQ

1.How can I place an order for AON2407 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON2407 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON2407 reliable?

The price and inventory of AON2407 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON2407 is usually 5 days.

3.What payment methods are accepted for AON2407?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON2407 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON2407?

AON2407 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON2407 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON2407?

For technical support, including AON2407 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON2407 requirements.

6.How does Aetrix verify that AON2407 is sourced from the original manufacturer or authorized distributors?

All AON2407 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON2407 meets industry standards.

7.What is the process for return or replacement of AON2407?

All AON2407 units undergo pre-shipment inspection (PSI). If there is an issue with AON2407, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON2407 part is unused and in its original packaging.

Return procedure for AON2407:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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