Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Alpha & Omega Semiconductor Inc. AON2410

Name: AON2410
Brand: Alpha & Omega Semiconductor Inc.
SKU: AON2410
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: AON2410

Manufacturer:: Alpha & Omega Semiconductor Inc.

Category:: FETs, MOSFETs

Package:: 6-UDFN Exposed Pad

Datasheet:: AON2410.pdf

Description:: MOSFET N CH 30V 8A DFN 2X2B

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,691

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

AON2410 from Alpha & Omega Semiconductor is a 30V N-channel enhancement-mode trench MOSFET in DFN 2×2B package, featuring R_DS(ON) < 21 mΩ at V_GS = 4.5 V, 8 A continuous drain current, and gate threshold voltage of 0.6–1.5 V - optimized for low-voltage load switching and battery protection circuits.

For engineers reviewing the AON2410 datasheet, pinout, applications, or equivalent options, key selection criteria include its 2.8 A rating at T_A = 70°C, 80 °C/W junction-to-ambient thermal resistance on standard FR-4, and body diode recovery time of 10 ns - critical for high-efficiency DC-DC and power-path control designs.

Technical Context

The AON2410 uses advanced trench-gate silicon process to achieve low R_DS(ON) with fast switching dynamics: total gate charge is 8–12 nC, gate resistance is 2.3–3.5 Ω, and output capacitance C_oss is 98 pF at V_DS = 15 V. Its 30 V V_DS rating supports single-cell Li-ion and USB PD 3.0 input rails.

Thermally, it is rated for junction temperatures from –55 °C to 150 °C, with pulsed drain current up to 32 A (t ≤ 10 s) and maximum power dissipation of 45 W at T_A = 25 °C using standard PCB layout. The device integrates a robust body diode with V_SD = 0.7–1.0 V and Q_rr = 2.4 nC.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - supports input rails up to 30 V, suitable for single-cell battery systems and 24 V industrial logic-level interfaces.
R_DS(ON) @ V_GS=4.5 V	< 21 mΩ - enables <170 mW conduction loss at 8 A, reducing thermal stress in compact load switches.
I_D Continuous	8 A @ T_A=25°C - defines steady-state current capability without heatsink under standard board conditions.
Q_g	8–12 nC - determines gate drive energy requirement; compatible with low-power microcontroller GPIOs driving via 3–10 Ω series resistor.
t_r/t_f	3 ns / 3.5 ns - enables sub-100 ns switching transitions, minimizing overlap loss in synchronous buck converters.
T_J Range	–55 to +150 °C - ensures operation across automotive cabin, industrial control, and portable equipment environments.

Pinout & Package

Package: DFN 2×2B (2 mm × 2 mm, 0.65 mm height), bottom-side thermal pad, RoHS-compliant, moisture sensitivity level 1 (MSL1).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (G)	Gate	Control terminal; accepts 0.6–1.5 V threshold; requires ≤ ±12 V gate-source voltage per absolute max rating.
Pins 2, 3, 4, 5 (D)	Drain	High-current power terminal; internally paralleled for low-inductance, low-resistance connection to PCB copper pour.
Pin 6 (S)	Source	Reference node for gate drive and current sensing; tied to system ground or low-side switch return path.
Bottom Thermal Pad	Drain (internally connected)	Primary thermal path; must be soldered to ≥1 in² 2 oz. copper area for rated 80 °C/W R_θJA.

Key Features

Feature	Design Value
Ultra-low R_DS(ON)	<21 mΩ @ 4.5 V enables high-efficiency load switching below 1 V dropout in battery-powered systems.
Fast switching speed	3 ns rise time and 26 ns turn-off delay support >1 MHz PWM operation in compact DC-DC regulators.
Robust body diode	10 ns reverse recovery time and 2.4 nC Q_rr reduce shoot-through risk and EMI in synchronous rectification.
Thermally enhanced package	DFN 2×2B with exposed drain pad delivers 80 °C/W R_θJA on standard FR-4 - no discrete heatsink required for ≤2 W dissipation.

Applications

Battery Protection Circuit	USB Power Delivery Switch
Use Scenario: Preventing overcurrent, short-circuit, and reverse-polarity events in single-cell Li-ion packs. IC Role / Device Role / Timing Role: Low-side protection switch controlled by battery management IC; conducts full pack current during normal operation. Use Value: Sub-21 mΩ R_DS(ON) minimizes voltage drop and self-heating during 8 A discharge, extending runtime and cycle life.	Use Scenario: Enabling/disabling 20 V/5 A power paths in USB-C PD 3.0 sink devices. IC Role / Device Role / Timing Role: High-speed load switch placed between port controller and system power rail. Use Value: 3 ns rise time ensures clean power sequencing with <100 ns response to enable signals, meeting USB PD timing compliance.
DC-DC Synchronous Rectifier	Industrial PLC I/O Module
Use Scenario: Replacing Schottky diodes in 12 V input buck converters for programmable logic controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by gate driver IC with 4.5 V output. Use Value: 2.4 nC Q_rr and 10 ns t_rr suppress voltage spikes and reduce switching losses by >30% vs. discrete diodes.	Use Scenario: Isolated digital output stage driving 24 V solenoids and relays in factory automation modules. IC Role / Device Role / Timing Role: High-side or low-side power switch interfacing with microcontroller GPIOs and optocouplers. Use Value: 30 V V_DS and –55 to +150 °C operating range ensure reliable operation in harsh industrial ambient conditions.

Battery Protection Circuit

USB Power Delivery Switch

Use Scenario: Preventing overcurrent, short-circuit, and reverse-polarity events in single-cell Li-ion packs.

IC Role / Device Role / Timing Role: Low-side protection switch controlled by battery management IC; conducts full pack current during normal operation.

Use Value: Sub-21 mΩ R_DS(ON) minimizes voltage drop and self-heating during 8 A discharge, extending runtime and cycle life.

Use Scenario: Enabling/disabling 20 V/5 A power paths in USB-C PD 3.0 sink devices.

IC Role / Device Role / Timing Role: High-speed load switch placed between port controller and system power rail.

Use Value: 3 ns rise time ensures clean power sequencing with <100 ns response to enable signals, meeting USB PD timing compliance.

DC-DC Synchronous Rectifier

Industrial PLC I/O Module

Use Scenario: Replacing Schottky diodes in 12 V input buck converters for programmable logic controllers.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier driven by gate driver IC with 4.5 V output.

Use Value: 2.4 nC Q_rr and 10 ns t_rr suppress voltage spikes and reduce switching losses by >30% vs. discrete diodes.

Use Scenario: Isolated digital output stage driving 24 V solenoids and relays in factory automation modules.

IC Role / Device Role / Timing Role: High-side or low-side power switch interfacing with microcontroller GPIOs and optocouplers.

Use Value: 30 V V_DS and –55 to +150 °C operating range ensure reliable operation in harsh industrial ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LFG-7	R_DS(ON) = 20 mΩ @ 4.5 V; same DFN 2×2 package but higher Q_g (14 nC); V_GS(th) = 0.7–1.3 V.	Slightly slower switching due to higher gate charge; less suitable for >500 kHz operation.	Prefer AON2410 where fast transition times and minimal gate drive power are critical.
Si2302DDS-T1-GE3	R_DS(ON) = 35 mΩ @ 4.5 V; SOT-23 package; lower current rating (3.5 A); V_GS(th) = 0.6–1.2 V.	Limited to ≤3.5 A loads; unsuitable for 8 A battery protection or high-current USB PD.	Select AON2410 when ≥8 A continuous current and thermal performance on FR-4 are required.

Compared with DMN2020LFG-7 and Si2302DDS-T1-GE3, the AON2410 delivers superior conduction efficiency and faster switching at 8 A, while maintaining compatibility with standard DFN 2×2 assembly processes - making it optimal for space-constrained, thermally demanding load-switch applications.

Availability

AON2410 is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and industrial PLC I/O modules requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for AON2410 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON2410 belongs to AOS's low-voltage trench MOSFET product line, engineered specifically for high-current, low-R_DS(ON) load switching in space- and thermally constrained portable and embedded systems.

FAQ

What is the maximum continuous drain current rating for the AON2410 at 70°C ambient temperature?

The AON2410 supports 2.8 A continuous drain current at T_A = 70°C with standard PCB mounting (1 in² 2 oz. copper). This derating reflects thermal limits under natural convection; increasing copper area or adding airflow raises usable current. The AON2410 datasheet specifies this value in the Absolute Maximum Ratings table and confirms it with thermal characterization curves on page 2.

Does the AON2410 have a built-in body diode, and what are its key parameters?

Yes, the AON2410 integrates a parasitic body diode with forward voltage V_SD = 0.7–1.0 V at I_S = 1 A and reverse recovery time t_rr = 10 ns. Its reverse recovery charge Q_rr is 2.4 nC at I_F = 8 A and dI/dt = 100 A/μs. These values are measured and specified in the Electrical Characteristics table on page 2 of the AON2410 datasheet.

What is the gate threshold voltage range for the AON2410, and how does it affect drive requirements?

The AON2410 has a gate threshold voltage V_GS(th) of 0.6–1.5 V at I_D = 250 μA. This low and tightly distributed threshold enables reliable turn-on with 1.8 V or 3.3 V logic-level drivers. However, full enhancement to R_DS(ON) < 21 mΩ requires V_GS ≥ 4.5 V, as confirmed in the R_DS(ON) vs. V_GS plot (Figure 5) and Electrical Characteristics table for the AON2410.

Can the AON2410 be used in high-frequency switching applications such as 1 MHz DC-DC converters?

Yes, the AON2410 supports high-frequency operation with t_r = 3 ns, t_f = 3.5 ns, and Q_g = 8–12 nC - enabling efficient switching at 1 MHz when paired with appropriate gate drive strength (e.g., ≥100 mA peak). Its low C_iss (813 pF) and Crss (56 pF) further reduce Miller effect, as verified in the Dynamic Parameters section of the AON2410 datasheet.

What is the recommended PCB layout for thermal management of the AON2410?

The AON2410 requires soldering of its exposed bottom thermal pad to ≥1 in² of 2 oz. copper on the PCB to achieve the rated 80 °C/W junction-to-ambient thermal resistance. Vias under the pad (≥6 × 0.3 mm diameter) connecting to inner or backside planes improve heat spreading. This layout is validated in AOS' thermal test condition "A" (page 2, footnote A) and directly impacts the AON2410's safe continuous current capability.

AON2410 Specifications

Product attributes: Attribute value

Manufacturer:: Alpha & Omega Semiconductor Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 2.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 8A, 4.5V

Vgs(th) (Max) @ Id:: 1.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 12 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 813 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-DFN (2x2)

AON2410 FAQ

1.How can I place an order for AON2410 through Aetrix?

Please submit a Request for Quotation (RFQ) for AON2410 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for AON2410 reliable?

The price and inventory of AON2410 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON2410 is usually 5 days.

3.What payment methods are accepted for AON2410?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON2410 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for AON2410?

AON2410 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your AON2410 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for AON2410?

For technical support, including AON2410 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON2410 requirements.

6.How does Aetrix verify that AON2410 is sourced from the original manufacturer or authorized distributors?

All AON2410 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON2410 meets industry standards.

7.What is the process for return or replacement of AON2410?

All AON2410 units undergo pre-shipment inspection (PSI). If there is an issue with AON2410, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The AON2410 part is unused and in its original packaging.

Return procedure for AON2410:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…