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Alpha & Omega Semiconductor Inc. AON4703
- Part No.:
- AON4703
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-SMD, Flat Leads
- Datasheet:
-
AON4703.pdf
- Description:
- MOSFET P-CH 20V 3.4A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,680
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Product details
Overview
AON4703 from Alpha & Omega Semiconductor is a 20V P-Channel MOSFET with integrated Schottky diode in a DFN3x2 package, delivering RDS(ON) < 90 mΩ at VGS = −4.5 V and continuous drain current of −3.4 A. It serves as a bidirectional blocking switch or synchronous rectifier in buck converters for portable power management.
For engineers reviewing the AON4703 datasheet, pinout, applications, or equivalent options, key selection criteria include its trench-based low-RDS(ON) performance, integrated Schottky's 0.5 V forward drop at 1 A, thermal resistance of 110 °C/W (junction-to-ambient), and DFN3x2 footprint suitability for space-constrained DC-DC modules.
Technical Context
The AON4703 integrates a P-Channel MOSFET and a Schottky diode in a single DFN3x2 die. Its trench MOSFET structure enables low gate charge (Qg = 11 nC) and fast switching (tf = 56 ns), while the co-packaged Schottky provides low VF (0.5 V @ 1 A) and ultrafast trr (14 ns).
Thermal design is constrained by junction-to-ambient RθJA = 110 °C/W (steady-state) and junction-to-lead RθJL = 40 °C/W, with maximum junction temperature rated to 150 °C. The device operates with VGS(th) between −0.4 V and −1.0 V, enabling logic-level drive compatibility down to −2.5 V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage for low-voltage buck converter high-side or load-switch applications. |
| RDS(ON) | < 90 mΩ @ VGS = −4.5 V - Enables <100 mW conduction loss at 3.4 A, critical for efficiency in battery-powered systems. |
| ID (cont) | −3.4 A @ TA = 25 °C - Sustained current capability suitable for 3–5 W DC-DC stages without forced cooling. |
| VF (Schottky) | 0.5 V @ IF = 1 A - Reduces forward conduction loss versus standard body diode, improving light-load efficiency. |
| Qg | 11 nC - Low gate charge supports high-frequency PWM (>1 MHz) with minimal driver power overhead. |
| tr/tf | 36 ns / 56 ns - Fast edge rates minimize switching transition losses in synchronous rectification. |
| TJ max | 150 °C - Allows operation in thermally demanding environments such as enclosed handheld enclosures. |
Pinout & Package
Package: DFN3x2 (3.0 mm × 2.0 mm, 0.65 mm pitch, exposed drain pad). Thermal performance optimized via bottom-side copper pad soldered to PCB ground plane.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal for MOSFET channel; requires −4.5 V to fully enhance; threshold range −0.4 V to −1.0 V. |
| 2 (D) | Drain | Main current path input; electrically tied to exposed thermal pad; connects to input rail in high-side switch topology. |
| 3 (S) | Source | Reference node for gate drive and current return; ties to output node or ground depending on circuit configuration. |
| 4 (K) | Schottky Cathode | Anode of integrated Schottky diode; connected internally to source (S); used for reverse-current blocking or freewheeling path. |
| 5–8 (Exposed Pad) | Drain / Thermal Sink | Electrically and thermally connected to drain (Pin 2); must be soldered to PCB copper area for RθJA compliance. |
Key Features
| Feature | Design Value |
|---|---|
| Integrated Schottky Diode | Enables self-contained bidirectional blocking without external diode; VF ≤ 0.5 V @ 1 A reduces conduction loss in buck freewheeling paths. |
| Trench MOSFET Architecture | Delivers RDS(ON) < 90 mΩ at −4.5 V gate drive, supporting efficient operation with standard logic-level controllers. |
| Low Qg & Qgd | Qg = 11 nC and Qgd = 2.1 nC minimize Miller-induced switching delay and improve EMI behavior in high-frequency converters. |
| DFN3x2 Thermal Design | Exposed drain pad and 40 °C/W RθJL enable direct heat transfer to PCB, sustaining −3.4 A continuous current without heatsink. |
| Ultrafast Schottky Recovery | trr = 14 ns and Qrr = 2.5 nC prevent reverse-recovery spikes, eliminating need for snubbers in synchronous rectifier designs. |
Applications
| USB-C Power Delivery Sink | Battery Protection Circuit |
|---|---|
|
Use Scenario: Reverse-polarity and overvoltage protection for USB-C input rails in portable devices. IC Role / Device Role: High-side load switch with integrated Schottky for reverse-current blocking during hot-plug events. Use Value: Eliminates discrete Schottky requirement; 0.5 V VF and 14 ns trr prevent bus collapse during plug/unplug transients. |
Use Scenario: Cell-balancing and discharge path control in 1S/2S Li-ion battery packs. IC Role / Device Role: P-channel MOSFET switch controlling discharge FET gate or balancing resistor connection. Use Value: −3.4 A rating and −20 V VDS support full-cell voltage ranges; low RDS(ON) minimizes self-heating during extended discharge. |
| Portable DC-DC Buck Converter | Smartphone Power Management Unit |
|
Use Scenario: Synchronous rectifier in 3–5 W buck regulators powering PMICs or sensors. IC Role / Device Role: Low-side switch with integrated Schottky replacing external diode in non-synchronous mode or assisting body diode conduction. Use Value: 90 mΩ RDS(ON) and 0.5 V VF reduce total conduction loss by >30% vs. discrete MOSFET + diode solutions. |
Use Scenario: Always-on rail switching for real-time clock or sensor subsystems in sleep mode. IC Role / Device Role: Ultra-low-leakage load switch isolating downstream circuits; VGS(th) down to −0.4 V ensures reliable turn-off with weak pull-up bias. Use Value: IDSS ≤ 1 µA @ −20 V enables sub-µA standby current; DFN3x2 footprint saves board space in tight PMU layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-Channel MOSFET-with-integrated-Schottky applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Si7157DP | 20 V, −3.1 A, RDS(ON) = 105 mΩ @ −4.5 V; no integrated Schottky; SO-8 package. | Requires external Schottky for bidirectional blocking; larger footprint and higher thermal resistance (RθJA = 125 °C/W). | Select when board layout allows SO-8 and discrete diode integration is acceptable for cost optimization. |
| DMN2023LSD | 20 V, −4.0 A, RDS(ON) = 75 mΩ @ −4.5 V; no integrated Schottky; DFN3x3 package. | Lacks co-packaged Schottky; requires separate diode placement; slightly larger DFN footprint increases routing complexity. | Prefer when maximum current handling (−4.0 A) outweighs Schottky integration benefit and layout permits extra component. |
Compared with Si7157DP and DMN2023LSD, the AON4703 uniquely combines trench MOSFET performance with an integrated Schottky in a compact DFN3x2, reducing BOM count and PCB area while maintaining competitive RDS(ON) and thermal metrics-ideal where space and component count are critical.
Availability
AON4703 is available at Aetrix Electronics and suitable for USB-C power delivery sinks, portable DC-DC buck converters, and smartphone power management units requiring stable component supply and consistent DFN3x2 sourcing.
Supply support for AON4703 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-efficiency MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON4703 belongs to AOS's integrated power switch product line, designed specifically for space-constrained, high-efficiency DC-DC conversion and load-switching applications where co-packaged Schottky functionality improves system-level efficiency and simplifies layout.
FAQ
What is the maximum continuous drain current rating for the AON4703?
The AON4703 supports −3.4 A continuous drain current at TA = 25 °C with proper PCB thermal management. At elevated ambient temperatures (e.g., 70 °C), derating applies: −2.7 A. This rating assumes use of the exposed drain pad soldered to ≥1 in² of 2 oz. copper per AOS test conditions.
Does the AON4703 include a built-in Schottky diode, and how is it connected?
Yes, the AON4703 integrates a Schottky diode with cathode (K) on Pin 4 and anode internally tied to the source (S). This configuration enables bidirectional blocking when used as a high-side switch and provides low-loss freewheeling in buck topologies without adding external components.
What is the gate threshold voltage range for the AON4703, and how does it affect drive requirements?
The AON4703 has a gate threshold voltage (VGS(th)) range of −0.4 V to −1.0 V. This low-threshold enables reliable turn-on with −2.5 V gate drive, making it compatible with 2.5 V logic outputs and ideal for battery-powered systems where gate drive voltage headroom is limited.
Can the AON4703 be used in synchronous rectification applications?
Yes, the AON4703 is suitable for synchronous rectification in low-voltage buck converters. Its low RDS(ON) (< 90 mΩ), fast switching (tf = 56 ns), and integrated Schottky diode allow it to replace both the low-side MOSFET and external diode, improving light-load efficiency and reducing component count.
What thermal resistance values apply to the AON4703 in a typical PCB layout?
In a standard 1 in² FR-4 board with 2 oz. copper, the AON4703 exhibits RθJA = 110 °C/W (steady-state) and RθJL = 40 °C/W. These values assume full soldering of the exposed drain pad; inadequate pad connection degrades thermal performance significantly and must be verified per AOS Application Note AN-1001.
AON4703 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-SMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 3.4A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.1 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 540 pF @ 10 V
- FET Feature:
- Schottky Diode (Isolated)
- Power Dissipation (Max):
- 1.7W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (3x2)
AON4703 FAQ
1.How can I place an order for AON4703 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON4703 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON4703 reliable?
The price and inventory of AON4703 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON4703 is usually 5 days.
3.What payment methods are accepted for AON4703?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON4703 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON4703?
AON4703 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON4703 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON4703?
For technical support, including AON4703 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON4703 requirements.
6.How does Aetrix verify that AON4703 is sourced from the original manufacturer or authorized distributors?
All AON4703 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON4703 meets industry standards.
7.What is the process for return or replacement of AON4703?
All AON4703 units undergo pre-shipment inspection (PSI). If there is an issue with AON4703, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON4703 part is unused and in its original packaging.
Return procedure for AON4703:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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