Alpha & Omega Semiconductor Inc. AON6160

Overview

AON6160 from Alpha & Omega Semiconductor is a 60V, 100A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-efficiency synchronous rectification in DC/DC and AC/DC converters with R_DS(ON) < 1.58 mΩ at V_GS = 10 V, 100% UIS tested, and housed in a thermally enhanced DFN5x6 package.

For engineers reviewing the AON6160 datasheet, pinout, applications, or equivalent options, key selection criteria include low gate charge (Q_g = 120 nC max), fast switching (t_r = 10.5 ns, t_f = 12 ns), robust avalanche capability (E_AS = 421 mJ), and thermal performance (R_θJC = 0.58 °C/W).

Technical Context

The AON6160 employs AlphaSGT™ trench-gate superjunction technology to achieve ultra-low R_DS(ON) and high current density in a surface-mount DFN5x6 package. Its gate threshold voltage (2.1–3.4 V) enables compatibility with standard 5 V and 10 V logic-level drivers, while its low Q_g and Q_gd support high-frequency operation up to several hundred kHz.

Designed for unclamped inductive switching (UIS) reliability, the device features 100% R_g testing and integrated body diode with t_rr = 15–50 ns and Q_rr = 110–250 nC. Thermal design is supported by validated junction-to-case (0.58 °C/W) and junction-to-ambient (50 °C/W) resistance values under defined PCB conditions.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed thermal pad). Thermally enhanced bottom-side copper pad requires solder stencil optimization for optimal heat transfer.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP60R190C7 and SiR626DP, the AON6160 delivers superior thermal performance (R_θJC = 0.58 °C/W) and lowest R_DS(ON) in DFN5x6, making it uniquely suited for high-current, high-density synchronous rectification where junction temperature control is critical.

Availability

AON6160 is available at Aetrix Electronics and suitable for synchronous buck converters, industrial motor drives, AC/DC PFC stages, and high-power LED drivers requiring stable component supply, consistent parametric performance, and long-term manufacturing continuity.

Supply support for AON6160 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, industrial, and automotive markets.

The AON6160 belongs to AOS's AlphaSGT™ N-channel MOSFET product line, engineered specifically for high-current, high-efficiency power conversion in compact, thermally demanding applications such as server PSUs and motor inverters.

FAQ

What is the maximum continuous drain current rating for the AON6160?

The AON6160 has a continuous drain current rating of 100 A at case temperature T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited and assumes proper thermal management via the exposed DFN5x6 thermal pad. At T_C = 25 °C, the rating increases to 215 A, but practical operation must respect junction temperature limits (T_J ≤ 150 °C) and PCB thermal design.

Does the AON6160 support logic-level gate drive?

Yes, the AON6160 supports logic-level gate drive with a gate threshold voltage V_GS(th) ranging from 2.1 V to 3.4 V (typical 2.55 V), enabling reliable turn-on with standard 3.3 V or 5 V microcontroller outputs. However, for minimum R_DS(ON) and full 100 A current capability, a 10 V gate drive is required per datasheet test conditions.

Is the AON6160 suitable for synchronous rectification in a 48 V input buck converter?

Yes, the AON6160 is explicitly recommended for synchronous rectification in DC/DC converters, including 48 V input buck topologies. Its 60 V V_DS rating provides sufficient margin against voltage spikes, while its <1.58 mΩ R_DS(ON) and low Q_g minimize conduction and switching losses - key for achieving >96% efficiency at 50–100 A output currents in the AON6160-based design.

What thermal resistance values are validated for the AON6160 in standard PCB layout?

The AON6160 datasheet specifies R_θJC = 0.58 °C/W (junction-to-case) and R_θJA = 50 °C/W (junction-to-ambient) when mounted on a 1 in² FR-4 board with 2 oz. copper in still air. These values are measured per JEDEC standards and are used to calculate safe operating area and power derating curves - critical for validating thermal design before prototyping the AON6160 into production.

How is avalanche ruggedness verified for each AON6160 unit?

Every AON6160 unit undergoes 100% Unclamped Inductive Switching (UIS) testing per datasheet specification, verifying a minimum single-pulse avalanche energy E_AS of 421 mJ. This production test ensures field reliability under inductive load transients - a requirement not met by standard qualification screening - and is documented in Rev. 3.0 of the AON6160 datasheet.