Alpha & Omega Semiconductor Inc. AON6226

Overview

AON6226 from Alpha & Omega Semiconductor is a 100V, 48A N-channel Trench Power MOSFET using AlphaSGT™ technology, optimized for high-efficiency synchronous rectification in AC/DC quick chargers. It delivers R_DS(ON) < 7.9 mΩ at V_GS = 10 V and < 10.2 mΩ at V_GS = 4.5 V, with low gate charge (Q_g = 42–60 nC) and 100% UIS-tested ruggedness.

For engineers reviewing the AON6226 datasheet, pinout, applications, or equivalent options, key selection criteria include its DFN5x6 package thermal performance (R_θJC = 1.15 °C/W), body-diode reverse recovery (t_rr = 30 ns, Q_rr = 150 nC), and gate threshold voltage range (1.3–2.3 V) for reliable 4.5 V logic-level drive.

Technical Context

The AON6226 employs AlphaSGT™ trench-gate superjunction structure to achieve low conduction loss while maintaining fast switching. Its 100% UIS-tested capability supports unclamped inductive switching up to E_AS = 54 mJ (L = 0.1 mH), and 100% R_g testing ensures gate resistance consistency (0.7–2.1 Ω).

Thermal design is enabled by its DFN5x6 package with exposed drain pad, delivering R_θJC = 1.15 °C/W and P_D = 108 W at T_C = 25 °C. The device operates across –55 to +150 °C junction temperature range and supports synchronous rectifier control with low Q_gd/Q_g ratio (4.5/60 nC ≈ 7.5%) for reduced Miller-induced turn-off delay.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), thermally enhanced with exposed drain pad on bottom side. Pin 1 (G) is gate, Pin 2 (D) and Pin 3 (S) are source terminals, Pin 4 (D) is drain - dual-source/dual-drain configuration improves current sharing and thermal spreading.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP040N10N5 and SiR626DP, the AON6226 uniquely combines DFN5x6 footprint, 100% UIS validation, and sub-10 mΩ R_DS(ON) at 4.5 V - making it the preferred choice for compact, high-reliability quick-charger designs requiring both size and ruggedness.

Availability

AON6226 is available at Aetrix Electronics and suitable for USB PD quick chargers, high-density AC/DC adapters, and server OR-ing circuits requiring stable component supply, consistent parametric performance, and RoHS-compliant packaging.

Supply support for AON6226 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.

The AON6226 belongs to AOS's AlphaSGT™ family, engineered specifically for high-frequency, high-efficiency synchronous rectification in next-generation power adapters and chargers.

FAQ

What is the maximum continuous drain current rating for the AON6226?

The AON6226 has a continuous drain current rating of 48 A at T_C = 25 °C, as specified in the Absolute Maximum Ratings table. This rating is package-limited (per datasheet note G) and de-rates linearly to 14 A at T_C = 100 °C per Figure 13. For PCB-level thermal design, the AON6226 must be mounted on ≥1 in² 2 oz copper with thermal vias to sustain rated current.

Does the AON6226 support 4.5 V logic-level gate drive?

Yes, the AON6226 is fully characterized for 4.5 V gate drive: R_DS(ON) is guaranteed < 10.2 mΩ at V_GS = 4.5 V and I_D = 20 A, and gate threshold voltage is specified from 1.3 to 2.3 V. This ensures reliable turn-on with standard 4.5 V PWM controllers and eliminates need for gate-boost circuits in most synchronous rectifier applications.

Is the AON6226 suitable for unclamped inductive switching (UIS) applications?

Yes - the AON6226 is 100% UIS tested per datasheet, with guaranteed single-pulse avalanche energy E_AS = 54 mJ at L = 0.1 mH and T_J = 25 °C. This makes it suitable for flyback and LLC converters where transformer leakage inductance causes voltage spikes exceeding V_DS rating during turn-off.

What is the thermal resistance from junction to case (R_θJC) for the AON6226?

The AON6226 has R_θJC = 1.15 °C/W, measured with the device mounted to a large heatsink (per datasheet note F). This value is critical for heatsink-based thermal design: for example, at 108 W power dissipation, the junction-to-case temperature rise is only 124 °C - well within the 150 °C maximum junction limit when case temperature is held ≤26 °C.

How does the AON6226's body-diode performance compare to standard Schottky diodes?

The AON6226's body diode has V_SD = 0.7–1.0 V at I_S = 1 A and t_rr = 30 ns with Q_rr = 150 nC, enabling efficient synchronous rectification. While forward voltage is higher than Schottky diodes, its fast, soft recovery eliminates reverse recovery spikes and allows precise timing control - unlike Schottky diodes, which lack controllable turn-off and suffer from thermal runaway at high temperatures.