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Alpha & Omega Semiconductor Inc. AON6264C
- Part No.:
- AON6264C
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6264C.pdf
- Description:
- N
- Quantity:
- Payment:
- Shipping:
Inventory:6,687
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Product details
Overview
AON6264C from Alpha & Omega Semiconductor is a 60V, 24A N-channel Trench Power AlphaSGT™ MOSFET in DFN5x6 package, featuring logic-level gate drive (VGS(th) = 1.2–2.2V), RDS(ON) < 13.2 mΩ at VGS = 10V and < 17.7 mΩ at VGS = 4.5V, with HBM Class 2 ESD protection - optimized for high-frequency synchronous rectification in DC-DC converters.
For engineers reviewing the AON6264C datasheet, pinout, applications, or equivalent options, key selection criteria include its low gate charge × RDS(ON) figure-of-merit (Qg(10V) = 15–21 nC), avalanche-rated ruggedness (100% UIS tested), and thermal performance (RθJC = 4.8°C/W) in compact surface-mount form.
Technical Context
The AON6264C employs AlphaSGT™ trench technology to achieve low conduction loss and fast switching dynamics: tD(on) = 4.5 ns, tr = 3 ns, tD(off) = 25 ns, and tf = 3.5 ns under VGS = 10V, VDS = 30V, ID = 20A conditions. Its body diode exhibits VSD = 0.72–1.0 V at IS = 1 A and Qrr = 59 nC with trr = 17 ns at IF = 20 A, di/dt = 500 A/μs.
Thermally, it supports continuous operation up to TJ = 150°C with RθJC = 4.8°C/W and RθJA = 55°C/W (on 1 in² FR-4, 2 oz Cu). Power dissipation is limited to PD = 10.5 W at TC = 100°C and PDSM = 5.0 W at TA = 25°C, reflecting package-constrained current handling (ID = 24 A at TC = 25°C).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 60 V - maximum blocking voltage compatible with 48V input systems and PoE++ power stages |
| ID (VGS=10V) | 24 A - continuous drain current rating at case temperature 25°C, enabling high-current buck converter phases |
| RDS(ON) (VGS=10V) | < 13.2 mΩ - low conduction loss yielding <0.76 W conduction loss at 24 A, critical for efficiency in 12–48V outputs |
| Qg(10V) | 15–21 nC - total gate charge determining driver strength requirement and switching loss trade-off |
| EAS | 29 mJ - unclamped inductive switching energy rating confirming robustness against transient overloads without external snubbers |
| RθJC | 4.8 °C/W - junction-to-case thermal resistance enabling direct heatsink mounting for >10 W sustained power dissipation |
| VGS(th) | 1.2–2.2 V - logic-level threshold allowing direct drive from 3.3V or 5V controllers without level-shifting |
Pinout & Package
Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height, exposed thermal pad), RoHS 2.0 and halogen-free compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 7, 8 | Source (S) | Common source connection with low-inductance parallel routing; tied to exposed thermal pad for optimal heat transfer |
| 5, 6 | Drain (D) | High-current drain terminals; electrically and thermally connected to top-side copper pads for PCB-level current sharing |
| Center Pad (Bottom) | Source (S) | Exposed thermal pad - must be soldered to large copper pour for RθJC = 4.8°C/W performance |
| Pin 5 (Top View) | Gate (G) | Single gate input terminal; requires low-impedance driver path due to Rg = 0.6–2.0 Ω and Qg = 15–21 nC |
Key Features
| Feature | Design Value |
|---|---|
| AlphaSGT™ Trench Technology | Enables sub-14 mΩ RDS(ON) at 60V while maintaining high cell density and low gate charge |
| Logic-Level Gate Drive | VGS(th) range of 1.2–2.2 V ensures reliable turn-on with standard 3.3V microcontrollers and PWM controllers |
| 100% UIS Tested | Each unit validated for unclamped inductive switching up to 29 mJ, eliminating need for external clamping in flyback or buck-boost designs |
| HBM Class 2 ESD Protection | Withstands ≥2 kV human-body-model ESD events, reducing risk of gate oxide damage during board assembly and handling |
| Low Qg × RDS(ON) FOM | Product of 15–21 nC × 13.2 mΩ ≈ 200–280 pC·Ω - benchmark for high-efficiency, high-frequency synchronous rectifiers |
Applications
| Server VRMs | Industrial DC-DC Converters |
|---|---|
|
Use Scenario: High-density 48V-to-12V/5V point-of-load regulation in AI accelerator racks requiring >95% efficiency at 30–60 A per phase. IC Role / Device Role / Timing Role: Synchronous rectifier switch in multiphase buck converters, operating at 500 kHz–1 MHz with tight dead-time control. Use Value: Low RDS(ON) and fast switching minimize conduction + switching losses; DFN5x6 footprint enables compact layout with minimal loop inductance. |
Use Scenario: Isolated 24V input DC-DC modules for PLC I/O modules and motor drives where reliability under load dump and surge is critical. IC Role / Device Role / Timing Role: Primary-side high-side switch in active clamp forward or secondary-side synchronous rectifier in LLC resonant converters. Use Value: 100% UIS testing and 150°C max junction temperature support operation in harsh industrial ambient (85°C+), with no derating below 24 A at TC ≤ 70°C. |
| Telecom PoE++ PSE | Automotive ADAS Power Supplies |
|
Use Scenario: 90W Power Sourcing Equipment (PoE++) switches delivering up to 57 V/1.5 A per port with IEEE 802.3bt compliance. IC Role / Device Role / Timing Role: Hot-swap MOSFET and DC-DC primary switch in multi-port PSE controllers managing inrush, fault isolation, and power budgeting. Use Value: Logic-level gate allows direct interface with PoE controller ICs (e.g., MAX5984); RDS(ON) < 17.7 mΩ at 4.5V ensures low dropout and thermal margin at full load. |
Use Scenario: 12V-to-5V/3.3V power supplies for radar sensors and camera ECUs in ASIL-B systems requiring extended temperature operation and functional safety awareness. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in isolated flyback or forward converters, supporting 105°C ambient with derated current. Use Value: HBM Class 2 ESD rating and -55°C to +150°C TJ/TSTG range meet automotive qualification requirements; no additional gate protection needed. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSC014N06LS6 | RDS(ON) = 1.4 mΩ @ 10V (lower), but larger PG-TSDSON-8 (5×6mm same footprint), Qg = 29 nC (higher) | Better conduction loss at high current, but higher switching loss and gate drive demand | Prefer when conduction loss dominates (e.g., low-frequency, high-ID applications); avoid if gate drive capability is limited |
| Vishay SiR626DP | RDS(ON) = 13.5 mΩ @ 10V (nearly identical), Qg = 18 nC (similar), but no UIS rating specified in datasheet | Lacks documented avalanche ruggedness; requires external protection in inductive switching | Select when cost sensitivity outweighs need for built-in UIS robustness; verify system-level surge immunity separately |
Compared with AON6264C, BSC014N06LS6 offers lower RDS(ON) but demands stronger gate drive, while SiR626DP matches on-resistance and gate charge but omits UIS validation - making AON6264C the balanced choice for space-constrained, rugged, medium-frequency DC-DC designs.
Availability
AON6264C is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, and telecom PoE++ power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for AON6264C includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON6264C belongs to AOS' AlphaSGT™ logic-level MOSFET product line, engineered for high-efficiency, high-frequency power conversion in space-constrained applications where low Qg × RDS(ON) and ruggedness are essential.
FAQ
What is the maximum continuous drain current for AON6264C at 100°C case temperature?
The AON6264C supports 14 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package; at TC = 25°C, the rating is 24 A. Designers must ensure heatsinking maintains TC ≤ 100°C to sustain 14 A without exceeding TJ = 150°C.
Does AON6264C support 3.3V gate drive in practical applications?
Yes, AON6264C supports 3.3V gate drive due to its logic-level VGS(th) range of 1.2–2.2 V and guaranteed RDS(ON) < 17.7 mΩ at VGS = 4.5V. At 3.3V, typical RDS(ON) remains ~21 mΩ (per Figure 5), enabling usable conduction in low-power or thermally relaxed designs - though 4.5V or 5V drive is recommended for full 24 A capability.
Is the exposed thermal pad of AON6264C electrically connected to the source?
Yes, the exposed thermal pad on the bottom of the AON6264C DFN5x6 package is internally connected to the source terminals (Pins 1, 2, 3, 4, 7, 8). It must be soldered to a PCB copper pour tied to the source net to achieve the specified RθJC = 4.8°C/W and enable safe power dissipation above 5 W.
What does "100% UIS Tested" mean for AON6264C?
"100% UIS Tested" means every AON6264C unit undergoes unclamped inductive switching stress test per JEDEC JESD22-A110, verifying minimum EAS = 29 mJ at TJ = 25°C. This ensures each device can withstand worst-case inductive turn-off transients without failure - critical for reliability in flyback, boost, and motor drive circuits where snubberless operation is desired.
How does the body diode performance of AON6264C compare to standard silicon diodes?
The AON6264C body diode has VSD = 0.72–1.0 V at IS = 1 A and trr = 17 ns with Qrr = 59 nC, significantly faster and lower forward drop than discrete 60V Schottky diodes (typical VF = 0.45–0.55 V but Qrr = 0). While not as low-VF as Schottkys, its integrated, matched switching characteristics reduce layout complexity and improve synchronous rectifier timing control in DC-DC converters.
AON6264C Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- AlphaSGT™
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 14.5A (Ta), 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 13.2mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 895 pF @ 30 V
- FET Feature:
- -
- Power Dissipation (Max):
- 5W (Ta), 26W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6264C FAQ
1.How can I place an order for AON6264C through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6264C on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6264C reliable?
The price and inventory of AON6264C are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6264C is usually 5 days.
3.What payment methods are accepted for AON6264C?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6264C transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6264C?
AON6264C orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6264C order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6264C?
For technical support, including AON6264C datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6264C requirements.
6.How does Aetrix verify that AON6264C is sourced from the original manufacturer or authorized distributors?
All AON6264C products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6264C meets industry standards.
7.What is the process for return or replacement of AON6264C?
All AON6264C units undergo pre-shipment inspection (PSI). If there is an issue with AON6264C, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6264C part is unused and in its original packaging.
Return procedure for AON6264C:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6264C Tags
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