Alpha & Omega Semiconductor Inc. AON6280

Overview

AON6280 from Alpha & Omega Semiconductor is an 80V, 85A N-channel Trench MOSFET with R_DS(ON) < 4.1 mΩ at V_GS = 10 V and < 5.0 mΩ at V_GS = 6 V, optimized for high-frequency switching in synchronous rectifiers and boost converters used in telecom and industrial power supplies.

For engineers reviewing the AON6280 datasheet, pinout, applications, or equivalent options, key selection considerations include its 100% UIS-tested ruggedness, low C_iss/C_oss for reduced switching loss, DFN5x6 package thermal performance, and gate charge (Q_g = 58–82 nC) impact on driver sizing.

Technical Context

The AON6280 employs AlphaSGT™ trench MOSFET technology to simultaneously minimize conduction loss (via ultra-low R_DS(ON)) and switching loss (via low C_iss = 3930 pF, C_oss = 592 pF, and Q_gd = 14 nC). Its 100% unclamped inductive switching (UIS) and gate resistance (R_g = 0.3–1.1 Ω) testing ensure robustness in hard-switching topologies.

This device operates with a gate threshold voltage of 2.0–3.2 V and supports continuous drain current up to 85 A at T_C = 25°C. Its body diode exhibits V_SD = 0.7–1.0 V at I_S = 1 A and reverse recovery charge Q_rr = 153 nC, enabling reliable synchronous rectification without external Schottky replacement.

Key Specifications

Pinout & Package

Package: DFN5x6 (5 mm × 6 mm, 1.0 mm height), exposed drain pad for enhanced thermal conduction and low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IPP040N08N and SIHF80N08D, the AON6280 delivers superior switching efficiency via lower Q_g/C_iss, verified UIS robustness for transient immunity, and DFN5x6 thermal performance enabling smaller heatsinks and higher power density.

Availability

AON6280 is available at Aetrix Electronics and suitable for telecom AC-DC front-end, industrial boost PFC, and LED backlight inverter applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for AON6280 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power modules for computing, consumer, industrial, and telecom markets.

The AON6280 belongs to AOS' AlphaSGT™ trench MOSFET product line, engineered specifically for high-frequency, high-efficiency power conversion where low R_DS(ON) × Q_g and rugged UIS performance are critical.

FAQ

What is the maximum continuous drain current rating for the AON6280 at 100°C case temperature?

The AON6280 supports 65 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the DFN5x6 package and ensures safe operation without exceeding T_J(MAX) = 150°C. The AON6280 maintains R_DS(ON) stability across this range due to its positive temperature coefficient.

Does the AON6280 have a specified gate threshold voltage range, and how does it affect drive circuit design?

Yes, the AON6280 has a gate threshold voltage (V_GS(th)) range of 2.0–3.2 V at T_J = 25°C. This narrow window ensures consistent turn-on behavior across production lots and simplifies gate driver selection - a 5 V logic-level signal fully enhances the device, while 3.3 V systems require verification of sufficient margin above 3.2 V worst-case. The AON6280's defined V_GS(th) avoids unintended conduction in noisy environments.

Is the AON6280 suitable for synchronous rectification, and what body diode parameters support that use?

Yes, the AON6280 is explicitly qualified for synchronous rectification. Its body diode features V_SD = 0.7–1.0 V at I_S = 1 A and Q_rr = 153 nC (measured at I_F = 20 A, dI/dt = 500 A/μs), enabling low-loss reverse recovery and minimizing voltage spikes. These values are confirmed in the Electrical Characteristics table and make the AON6280 viable for replacing Schottky diodes in 48 V output rails without external diode supplementation.

How is thermal performance quantified for the AON6280, and what do R_θJC and R_θJA represent in practice?

The AON6280 specifies R_θJC = 1.5 °C/W (junction-to-case) and R_θJA = 55 °C/W (junction-to-ambient, measured on 1 in² FR-4 with 2 oz copper). R_θJC governs heatsink-limited designs - e.g., 55 W dissipation yields ΔT = 82.5°C rise from case to junction. R_θJA applies to PCB-only cooling; actual board layout significantly impacts this value, and the AON6280's DFN5x6 footprint is optimized to approach the stated 55 °C/W benchmark.

What does "100% UIS Tested" mean for the AON6280, and how is it validated?

"100% UIS Tested" means every AON6280 unit undergoes unclamped inductive switching stress per JEDEC JESD22-A109, verifying minimum 13 mJ single-pulse avalanche energy at T_J = 25°C. This test ensures each device can safely absorb inductive energy during fault events like short-circuit or startup transients without degradation. Unlike sampling-based qualification, 100% testing provides lot-level reliability assurance critical for telecom and industrial AON6280 deployments.