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Alpha & Omega Semiconductor Inc. AON6360
- Part No.:
- AON6360
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Category:
- FETs, MOSFETs
- Package:
- 8-PowerSMD, Flat Leads
- Datasheet:
-
AON6360.pdf
- Description:
- MOSFET N-CH 30V 36A/85A 8DFN
- Quantity:
- Payment:
- Shipping:
Inventory:5,985
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Product details
Overview
AON6360 from Alpha & Omega Semiconductor is a 30V, 85A N-channel Trench Power AlphaMOS MOSFET in DFN5x6 package, featuring <3mΩ RDS(ON) at VGS=10V and <5mΩ at 4.5V, low gate charge (Qg=24nC), and 100% UIS-tested ruggedness for high-efficiency DC/DC converter primary-side switching.
For engineers reviewing the AON6360 datasheet, pinout, applications, or equivalent options, this device is selected for high-current, low-voltage synchronous rectification and power stage switching where thermal performance, gate drive efficiency, and avalanche reliability are critical design constraints.
Technical Context
The AON6360 uses enhanced αMOS LV trench technology to achieve ultra-low on-resistance and fast switching with minimal gate drive loss. Its 0.8–2.6Ω gate resistance and 80pF reverse transfer capacitance (Crss) support stable operation in hard-switched topologies up to several hundred kHz.
Thermally, it delivers 17W continuous power dissipation at TC=100°C (RθJC=3°C/W), and its 100% UIS testing ensures robustness against unclamped inductive transients in real-world DC/DC converters.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30V - Maximum drain-source blocking voltage compatible with 24V input rails and 12V intermediate bus architectures. |
| ID (VGS=10V) | 85A - Continuous current rating enabling high-power density designs without parallel devices in 30A–60A output stages. |
| RDS(ON) (VGS=10V) | <3mΩ - Reduces conduction loss to ≤2.16W at 85A, critical for maintaining >95% efficiency in 12V→1V VRMs. |
| Qg (10V) | 24nC - Enables fast turn-on with low gate driver power demand; supports efficient operation with standard 1A–2A gate drivers. |
| tr/tf | 4ns/5ns - Ultra-fast switching minimizes overlap loss in synchronous buck converters operating above 500kHz. |
| EAS | 40mJ - Confirmed avalanche energy rating allows reliable operation under transient overcurrent without external snubbers. |
| RθJC | 3°C/W - Enables direct thermal coupling to PCB copper or heatsink for junction temperature control below 150°C at full load. |
Pinout & Package
Package: DFN5x6 (5mm × 6mm, 1.0mm height, exposed drain pad). Thermally optimized for bottom-side heat transfer via soldered thermal pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1, 2, 3, 4, 5, 6, 7, 8 (Drain Pad) | Drain (D) | Entire bottom-side exposed copper pad connects to drain; primary thermal path and high-current return node. |
| 1 (Top-side) | Gate (G) | Single gate input terminal; requires low-inductance routing to minimize ringing during fast switching. |
| 8 (Top-side) | Source (S) | Source connection for gate drive reference and current sensing; tied to power ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| 100% UIS tested | Guarantees single-pulse avalanche capability up to 40mJ, eliminating need for derating in inductive load transients. |
| Low RDS(ON) at 4.5V | <5mΩ enables use with 5V logic-level gate drivers in compact industrial and telecom DC/DC modules. |
| Trench Power AlphaMOS LV | Optimized cell structure reduces Miller capacitance (Crss=80pF), improving noise immunity and dV/dt ruggedness. |
| RoHS & Halogen-Free | Complies with IPC-1752A material declaration requirements for automotive and industrial end-equipment compliance. |
| 100% Rg tested | Ensures gate resistance consistency (0.8–2.6Ω), critical for predictable switching timing and EMI behavior across production lots. |
Applications
| Server VRM Power Stage | Telecom Isolated DC/DC |
|---|---|
Use Scenario: Primary-side high-side switch in 48V→12V isolated forward or active-clamp forward converters. IC Role / Device Role / Timing Role: High-current, low-loss main switch handling up to 60A peak drain current with tight duty-cycle control. Use Value: <3mΩ RDS(ON) cuts conduction loss by ≥35% vs. legacy 5mΩ MOSFETs, directly improving system efficiency and reducing heatsink size. |
Use Scenario: Secondary-side synchronous rectifier in 48V input telecom PSUs delivering 12V/20A outputs. IC Role / Device Role / Timing Role: Low-VDS N-channel rectifier controlled by transformer-coupled gate drive. Use Value: <5mΩ RDS(ON) at 4.5V gate drive enables >97% rectifier efficiency, replacing Schottky diodes with lower forward drop and no reverse recovery loss. |
| Industrial Motor Drive Half-Bridge | Computing DC/DC Converter |
Use Scenario: Low-side switch in 24V BLDC motor gate driver half-bridge modules for HVAC and pump control. IC Role / Device Role / Timing Role: Fast-switching, avalanche-rugged low-side FET handling repetitive 85A pulsed currents. Use Value: 100% UIS testing ensures survival under motor phase short-circuits and regenerative braking spikes without failure. |
Use Scenario: High-side switch in multiphase 12V→1.2V CPU VRMs with 500kHz+ switching frequency. IC Role / Device Role / Timing Role: Synchronous buck high-side FET with sub-10ns rise/fall times and low Qgd/Qgs ratio. Use Value: 5.8nC Qgd and 4nC Qgs reduce shoot-through risk and improve PWM fidelity at high frequencies. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon IPP036N04L | 40V VDS, 100A ID, RDS(ON)=2.6mΩ @ 10V, larger TO-252 package (RθJA=60°C/W). | Better voltage margin but higher thermal resistance limits high-frequency power density in space-constrained boards. | Select when 40V rating is required and board layout permits larger footprint and less aggressive thermal management. |
| Vishay SiR626DP | 30V VDS, 80A ID, RDS(ON)=3.2mΩ @ 10V, same DFN5x6 package, Qg=31nC (29% higher). | Higher gate charge increases driver loss and slows switching, reducing efficiency in >300kHz designs. | Preferable only if AON6360 supply is constrained and SiR626DP's qualification for extended temperature range is required. |
Compared with IPP036N04L and SiR626DP, the AON6360 offers the lowest combined RDS(ON) × Qg figure-of-merit (72 mΩ·nC) among 30V DFN5x6 MOSFETs, making it optimal for high-frequency, high-current computing and telecom power stages where thermal and switching losses must both be minimized.
Availability
AON6360 is available at Aetrix Electronics and suitable for server VRM power stages, telecom isolated DC/DC converters, and industrial motor drive half-bridges requiring stable component supply and consistent parametric performance across production batches.
Supply support for AON6360 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Alpha & Omega Semiconductor (AOS) is a fabless power semiconductor company specializing in high-performance MOSFETs, IGBTs, and power ICs for computing, consumer, and industrial markets.
The AON6360 belongs to AOS's AlphaMOS LV family-designed specifically for high-current, low-voltage synchronous rectification and primary-side switching in DC/DC converters where RDS(ON), Qg, and thermal resistance are co-optimized.
FAQ
What is the maximum continuous drain current rating for the AON6360 at 100°C case temperature?
The AON6360 supports 59A continuous drain current at TC=100°C, as specified in its Absolute Maximum Ratings table. This rating reflects package-limited current capacity under steady-state thermal conditions and assumes proper PCB copper area and airflow per the datasheet's test conditions (1in² FR-4, 2oz Cu). The AON6360 maintains safe operation within its SOA curve up to this limit when mounted with adequate thermal interface.
Does the AON6360 have integrated ESD protection on the gate terminal?
The AON6360 does not include on-die ESD protection circuitry; its gate oxide is rated for ±20V maximum gate-source voltage, and gate leakage (IGSS) is specified at ±100nA. System-level ESD protection-such as series gate resistors and TVS diodes-is recommended during handling and PCB layout. The AON6360's gate threshold voltage (1.4–2.2V) and low Ciss (1590pF) make it sensitive to static discharge, so standard MOSFET ESD precautions apply.
Can the AON6360 be used in linear mode (as a pass transistor)?
The AON6360 is not characterized or guaranteed for linear-mode operation. Its Safe Operating Area (SOA) curve is provided only for single-pulse switching conditions (Figure 9), and no DC or repetitive linear-mode ratings are given. Using the AON6360 as a pass transistor risks thermal runaway due to positive temperature coefficient of RDS(ON) and lack of SOA validation beyond pulse widths ≤100µs. For linear regulation, dedicated LDOs or purpose-built pass FETs should be selected instead.
What is the body diode forward voltage (VSD) of the AON6360 at 20A and 25°C?
The AON6360 exhibits a typical body diode forward voltage of 0.7V at IS=20A and TJ=25°C, with a maximum of 1.0V under those conditions. This low VSD supports efficient freewheeling in synchronous buck topologies and reduces reverse recovery loss compared to discrete Schottky diodes. The body diode's trr is 14.5ns and Qrr is 31nC, confirming fast recovery suitable for high-frequency operation.
Is the AON6360 qualified for automotive applications?
No-the AON6360 is explicitly designed and qualified for the consumer market only, as stated in the datasheet's disclaimer. It is not AEC-Q101 qualified, lacks automotive-grade screening (e.g., HTOL, ESD HBM/MM), and carries no guarantee for life-support or safety-critical systems. For automotive 12V/24V power stages, AOS offers automotive-qualified variants such as the AON6260 or AON6254, which undergo full AEC-Q101 stress testing and PPAP documentation.
AON6360 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Alpha & Omega Semiconductor Inc.
- Series:
- -
- Package/Case:
- 8-PowerSMD, Flat Leads
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 36A (Ta), 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1590 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.2W (Ta), 42W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 8-DFN (5x6)
AON6360 FAQ
1.How can I place an order for AON6360 through Aetrix?
Please submit a Request for Quotation (RFQ) for AON6360 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for AON6360 reliable?
The price and inventory of AON6360 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for AON6360 is usually 5 days.
3.What payment methods are accepted for AON6360?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for AON6360 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for AON6360?
AON6360 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your AON6360 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for AON6360?
For technical support, including AON6360 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your AON6360 requirements.
6.How does Aetrix verify that AON6360 is sourced from the original manufacturer or authorized distributors?
All AON6360 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that AON6360 meets industry standards.
7.What is the process for return or replacement of AON6360?
All AON6360 units undergo pre-shipment inspection (PSI). If there is an issue with AON6360, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The AON6360 part is unused and in its original packaging.
Return procedure for AON6360:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
AON6360 Tags
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BSZ180P03NS3EGATMA1
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AO4419
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